100-2-24 之間產生間隙而接觸不良，而導致散熱效率不良，而且在 電路板上必須空㈣絲©定座的空間，造成電路板面積的 浪費，所以上述黏著及鎖固方式已逐漸淘汰。 因此業界發展出以彈片扣合方式固定，如我國專利公 告第M251164號「散熱器之固絲置」，其係利用…形 的彈片將散熱鰭片扣合在基板上的固定座上’使散熱鰭片 緊壓在晶片上，然而此種扣壓式的結構係難以裝設的，原 因在裝設時必須施力將彈片靠近固定座，並 固定孔料蚊座上的扣合部，此施力及對 的，而且在裝設過程中散熱則容易滑動，造成散熱續片 與晶片的摩擦，導致晶片損壞。 此外’現今的電子產品所要求的功能越來越多，因此 在所屬電路板上設㈣處理晶片數量及麵也必須增加， 但疋現今習知散熱片型式皆是一晶片對一散熱片訊 置，使得電路板的面積賴増加，使散料有足夠的办二 進行裝δ又，進而導致電子產品的體積增加。 有鑑於此，本發明係針對上述之問題，提出 熱效率、容易裝設的多晶片散熱裝置，以克服 : 術產生之問題。 技 【發明内容】 本發明之主要目的，係在提供一種多晶片散熱 藉由在複數晶片上設置-散熱片，使此散熱片可同日^ ’ 多個晶片散發之熱ϊ，可減少組裝散熱片的作業時間，= 1285083 100-2-24 節省習知技術多個散熱片的材料成本。 本發明之另-目的，係在提供一種多晶片散执裝置， 利用散熱層及不同高度金屬塊與對應的^貼合 ==置的設置’使散熱片上的金屬塊因彈力施= 1^貼口在晶片上’有效克服f知技術的正負公差問題， 可防止晶片損壞及散熱效率降低，且可使基板上的晶片密 集度提1¾，進而縮小基板面積。 根據本發明，-種多晶片散熱裝置，包括一散熱片， 此散熱片係設置在一基板上並位於複數晶片上方，且在散 熱片與晶片之間^置-散熱層，用以傳導每—晶片散發之 熱量，再藉由複數彈性固定裝置將散熱片固定在基板丄， 使母一曰a片也緊密貼合在對應的散熱層上，另外在每一晶 片具有不同尚度時，在散熱片底面且相對於每一晶片之間 更可分別設置一金屬塊，使較低的晶片可藉由對應之金 塊傳熱至散熱片中。 底下藉由具體實施例配合所附的圖式詳加說明，當更 谷易瞭解本發明之目的、技術内容、特點及其所達成之功 效。 【實施方式】 本發明係一種多晶片散熱裝置，其係可安裝在已設置 複數晶片的基板上，同時設置在每一晶片上，將每一晶片 所散發的熱量移除，不同於習知的散熱方式以單一散熱片 對一晶片進行散熱，底下就以三種不同實施例結構予以說 5 100-2-24 明 卡，種多晶片散熱裝置結構，請參閱第二圖所 板1〇 \5日參閱第二A圖所示，此散熱裝置係設置在一基 f 0上，此基板H)上設有複數晶片12、14、16，其中晶 14、16表4、16分別具有不同面積及高度，且在晶片12、 轉h面上各職有—散熱層18，此散熱層18係為散 12、14 ~也可以散熱膠體代替，在基板10上且位於晶片 還自翻:^卢方設置〜散熱片⑽丨此散熱片加之材質係 行的=等金屬材質，且此散熱片2G上表面設有複數平 24 〇 22，在此散熱片20的四角落上分別設有固定孔 因晶片12、14、16具有不同的高度，所以散熱片2〇 & ，貼合在最高晶片12表面的散熱層18上，而高度較 ^的曰曰片14及16上方且位於散熱片20的底面設有複數金 人塊及28 ’其中金屬塊26及28可利用複數螺絲30鎖 合在散熱片20底面’另外也可使用黏貼的方式設置，而金 屬塊26及28之材質係選自導熱性高的銅或铭等材質，金 屬塊26及28之面積大小皆配合所對應的晶片12,而金屬 塊26及28底面也貼合在對應的散熱層18上，使晶片14 及16皆可透過金屬塊26及28傳導熱量至散熱片20，所 以此散熱層18可增加晶片12與散熱片20的密合度，以及 增加晶片14、16與金屬塊26、28的密合度，使傳熱效果 提高，此外此散熱層18因本身具有彈性，所以也可缓衝設 置散熱片20時的壓力。 1285083 100-2-24 另外，利用複數彈性固定裝置將散熱片2〇固定在基 板上此彈性固疋裝置包括一固定座32、一螺絲34及 一彈性元件36，此固定座32係設在基板1〇上，且對應散 熱片20上的固定孔24,而螺絲34的螺身係為無攻牙之圓 枉，且此螺絲34可在散熱片2〇上的固定孔24滑動，在此 螺絲34上套設此彈性元件36，此彈性元件％係為彈簧， 且此彈性元件36之内徑大於固定孔24，將套設好彈性元 件36的螺絲34分別穿過固定孔24，並鎖固在固定座 上，鎖固時彈性元件36因彈力而抵住散熱片2〇，而散熱 片20也因螺絲34鎖合的施力及彈性元件36的彈力，使散 熱片20與金屬塊26及28更緊密貼合在晶片12、14、16 的散熱層18上’而且散熱片2〇也藉由此螺絲34鎖固而使 散熱片20不易移動，最後在散熱片2〇的鰭片22上設置多 個風扇（圖中未示），利用風扇所產生的風吹送至相鄰鰭片 22之間隙中進行散熱。 而此多晶片散熱裝置結構之製程’如第三A圖及第三 B圖所示’首先係依據基板1〇所設置晶片12、14、16的 高度及面積，並針對較低晶片14、16配製適當大小的金屬 塊26及28 ’並且散熱片2〇底面且對應晶片、16利用 螺絲30將金屬塊26及28鎖固，接著在晶片12、14、16 表面分別設置散熱層18，並將散熱片20、金屬塊26及28 放置在基板10上，使散熱片20、金屬塊26及28的底面 壓合在散熱層18上，接著利用無攻牙的螺絲34套設彈性 元件36並穿過固定孔24，而鎖固在基板1〇的固定座32 7 1285083 100-2-24 上，使散熱片20與金屬塊26及28壓合在晶片12、14、 16表面的散熱層18上，如此即完成此多晶片散熱裝置結 構的製程。 第二種實施例結構，請參閱第四圖所示，此實施例與 第一種實施例差異在於散熱片20的固定孔24並不係設置 在散熱片20的四個角落，而是依基板10上的佈置或是晶 片12位置的考量而決定，當然彈性固定裝置也會隨著固定 孔24位置而進行設置，如此在設置散熱片時更具變化性及 方便性。 第三種實施例結構，請參閱第五圖所示，此實施例與 第一種及第二種實施例不同在於此複數晶片12、14、16 係為同等高度，因此在散熱片20底面也就不需要金屬塊 26及28設置，僅在每一晶片12、14、16上設置散熱層18, 保護晶片12、14、16不受刮傷損壞，並且藉由調整螺絲 34鎖入的深度及彈性元件36的彈力，使散熱片20與每一 晶片12、14、16更為貼近，進而使傳導效率更為良好。 接著第四種實施例結構，請參閱第六圖所示，此實施 例結構中的複數晶片12、14、16係為不同的高度，但其中 並未使用金屬塊，而是直接以散熱層18做為晶片12、14、 16與散熱片20之間的介質，以利用不同厚度的散熱層18 來調整晶片12、14、16與散熱片20之間的間隙，如此也 可達到保護晶片12、14、16,並同時進行多晶片散熱的功 效0 所以本發明多晶片散熱裝置係裝設在已完成晶片構 1285083 100-2-24There is a gap between 100-2-24 and the contact is poor, which leads to poor heat dissipation efficiency, and the space on the circuit board must be empty (four) wire, which causes waste of the board area. Therefore, the above-mentioned adhesion and locking methods have gradually disappeared. Eliminated. Therefore, the industry has developed a spring clip fastening method, such as the Chinese Patent Bulletin No. M251164 "Fixed Wire Fixture", which uses a shape-shaped elastic piece to fasten the heat sink fins to the fixing base on the substrate. The fins are pressed against the wafer. However, the crimped structure is difficult to install. The reason is that the elastic piece must be applied close to the fixed seat when fixing, and the fastening portion on the mosquito net holder is fixed. And right, and the heat dissipation during the installation process is easy to slide, causing friction between the heat sink and the wafer, resulting in wafer damage. In addition, 'there are more and more functions required by today's electronic products. Therefore, it is necessary to increase the number of wafers to be processed on the board (4). However, the conventional heat sink type is a wafer-to-heater chip. Therefore, the area of the circuit board is increased, so that the bulk material has enough equipment to carry out the δ, which leads to an increase in the volume of the electronic product. In view of the above, the present invention is directed to the above problems, and proposes a multi-wafer heat sink that is thermally efficient and easy to install to overcome the problems caused by the operation. SUMMARY OF THE INVENTION The main object of the present invention is to provide a multi-wafer heat dissipation by disposing a heat sink on a plurality of wafers, so that the heat sink can be dissipated in the same day as the plurality of wafers, and the heat sink can be reduced. Working time, = 1285083 100-2-24 Save the material cost of multiple heat sinks in the conventional technology. Another object of the present invention is to provide a multi-wafer floating device, which utilizes a heat dissipation layer and a metal block of different heights and a corresponding setting of '=== setting the metal block on the heat sink to be applied by the elastic force = 1^ The mouth on the wafer 'effectively overcomes the positive and negative tolerance problems of the technology, can prevent wafer damage and heat dissipation efficiency, and can increase the wafer density on the substrate, thereby reducing the substrate area. According to the present invention, a multi-wafer heat dissipating device includes a heat sink disposed on a substrate and positioned above the plurality of wafers, and a heat-dissipating layer is disposed between the heat sink and the wafer for conducting each of the heat sinks. The heat radiated from the wafer is fixed to the substrate by a plurality of elastic fixing devices, so that the mother-side sheet is also closely attached to the corresponding heat-dissipating layer, and in the case where each wafer has a different degree of heat dissipation A metal block is disposed on the bottom surface of the wafer and between each wafer, so that the lower wafer can be transferred into the heat sink by the corresponding gold bump. The details, technical contents, features, and effects achieved by the present invention will be apparent from the detailed description of the embodiments and the accompanying drawings. [Embodiment] The present invention is a multi-wafer heat dissipating device which can be mounted on a substrate on which a plurality of wafers are disposed, and is disposed on each wafer to remove heat radiated from each wafer, which is different from the conventional ones. The heat dissipation method uses a single heat sink to dissipate heat from a wafer. The structure of the 5 100-2-24 light card is described in three different embodiments. The structure of the multi-chip heat sink is described in the first figure. Referring to FIG. 2A, the heat dissipating device is disposed on a base f0. The substrate H) is provided with a plurality of wafers 12, 14, 16 wherein the crystals 14, 16 and 4, 16 have different areas and heights, respectively. And on the wafer 12, on the h surface, there is a heat dissipation layer 18, the heat dissipation layer 18 is a dispersion 12, 14 ~ can also be replaced by a heat-dissipating gel, on the substrate 10 and located in the wafer is also self-turning: ^ Lu Fang set The heat sink (10) is provided with a material such as a metal material, and the upper surface of the heat sink 2G is provided with a plurality of flat plates 24, 22, and fixed holes are formed on the four corners of the heat sink 20 by the wafer 12 , 14, 16 have different heights, so the heat sink 2〇&am p;, attached to the heat-dissipating layer 18 on the surface of the highest wafer 12, and above the ruthenium sheets 14 and 16 of the height, and on the bottom surface of the heat sink 20 are provided with a plurality of gold blocks and 28' of the metal blocks 26 and 28 The plurality of screws 30 can be locked to the bottom surface of the heat sink 20'. Alternatively, the adhesive can be used, and the materials of the metal blocks 26 and 28 are selected from materials such as copper or Ming with high thermal conductivity, and the areas of the metal blocks 26 and 28. The size is matched with the corresponding wafer 12, and the bottom surfaces of the metal blocks 26 and 28 are also attached to the corresponding heat dissipation layer 18, so that the wafers 14 and 16 can conduct heat to the heat sink 20 through the metal blocks 26 and 28, so the heat dissipation The layer 18 can increase the adhesion between the wafer 12 and the heat sink 20, and increase the adhesion between the wafers 14, 16 and the metal blocks 26, 28 to improve the heat transfer effect. Moreover, the heat dissipation layer 18 can also be relaxed due to its elasticity. The pressure at which the fins 20 are set. 1285083 100-2-24 In addition, the heat sink 2 is fixed on the substrate by using a plurality of elastic fixing devices. The elastic fixing device comprises a fixing base 32, a screw 34 and an elastic member 36. The fixing base 32 is disposed on the substrate. 1〇, and corresponding to the fixing hole 24 on the heat sink 20, and the screw body of the screw 34 is a round without a tapping, and the screw 34 can slide on the fixing hole 24 on the heat sink 2〇, where the screw The elastic member 36 is sleeved on the 34, the elastic member is a spring, and the inner diameter of the elastic member 36 is larger than the fixing hole 24. The screw 34 that sleeves the elastic member 36 passes through the fixing hole 24 and is locked. In the fixing seat, the elastic member 36 is pressed against the heat sink 2 by the elastic force during the locking, and the heat sink 20 is also biased by the screw 34 and the elastic force of the elastic member 36, so that the heat sink 20 and the metal block 26 and 28 is more closely attached to the heat dissipation layer 18 of the wafers 12, 14, 16 'and the heat sink 2 is also locked by the screw 34 to make the heat sink 20 difficult to move, and finally on the fins 22 of the heat sink 2 A plurality of fans (not shown) are provided, and the wind generated by the fan is blown to the adjacent fins 22 The heat is dissipated in the gap. The process of the multi-wafer heat sink structure is as shown in the third A and third B diagrams. Firstly, the height and area of the wafers 12, 14, 16 are set according to the substrate 1 and for the lower wafers 14, 16 Forming appropriately sized metal blocks 26 and 28' and securing the bottom surface of the heat sink 2 and corresponding wafers, 16 locking the metal blocks 26 and 28 with screws 30, and then disposing heat dissipation layers 18 on the surfaces of the wafers 12, 14, 16 respectively The heat sink 20 and the metal blocks 26 and 28 are placed on the substrate 10, and the bottom surfaces of the heat sink 20 and the metal blocks 26 and 28 are pressed against the heat dissipation layer 18, and then the elastic member 36 is sheathed by the screw 34 without tapping. The fixing hole 24 is fixed on the fixing base 32 7 1285083 100-2-24 of the substrate 1 , and the heat sink 20 and the metal blocks 26 and 28 are pressed on the heat dissipation layer 18 on the surface of the wafer 12 , 14 , 16 . Thus, the process of the multi-wafer heat sink structure is completed. For the structure of the second embodiment, please refer to the fourth embodiment. The difference between this embodiment and the first embodiment is that the fixing holes 24 of the heat sink 20 are not disposed at the four corners of the heat sink 20, but according to the substrate. The arrangement on the 10 or the position of the wafer 12 is determined. Of course, the elastic fixing device is also disposed along with the position of the fixing hole 24, which is more versatile and convenient when the heat sink is disposed. The structure of the third embodiment is shown in the fifth figure. This embodiment differs from the first and second embodiments in that the plurality of wafers 12, 14, and 16 are of the same height, so that the bottom surface of the heat sink 20 is also The metal blocks 26 and 28 are not required to be disposed, and only the heat dissipation layer 18 is disposed on each of the wafers 12, 14, 16 to protect the wafers 12, 14, 16 from scratches and the depth of the locking by the adjustment screws 34 and The elastic force of the elastic member 36 brings the heat sink 20 closer to each of the wafers 12, 14, 16 to further improve the conduction efficiency. Next, the structure of the fourth embodiment, as shown in the sixth figure, the plurality of wafers 12, 14, 16 in the structure of this embodiment are of different heights, but the metal blocks are not used, but the heat dissipation layer 18 is directly used. The medium between the wafers 12, 14, 16 and the heat sink 20 is used to adjust the gap between the wafers 12, 14, 16 and the heat sink 20 by using the heat dissipation layer 18 of different thicknesses, so that the protection of the wafer 12 can also be achieved. 14, 16, and the effect of multi-wafer heat dissipation at the same time. Therefore, the multi-chip heat sink device of the present invention is installed in the completed wafer structure 1280083 100-2-24.
裝的基板上，依據每一晶片之高度及面積配置適合的金屬 塊或散熱層，其中最為常見的例子係當電子產品增加其它 功能時’可能會增加基板的晶片數量或改變原有晶片的體 積，此時只須在原有散熱片底面增加或更換適當大小及高 度的金屬塊即可達到散熱功效，此外若彈性元件為彈簧 時，也可調整彈簧之線徑、圈數及自由長度控制散熱片加 壓在每一晶片的壓力，防止晶片損壞，此外除了調整彈簧 的方式外，也可採用計算公差方式，其計算公差(GAp)公 式如下列公式所示： a差(GAP)-固疋座深度⑻-晶片高度(〇_散熱層厚度(A) —⑴ a差(GAP)-固疋座味度(s)_晶片高度(Q·金屬塊厚度⑻ ~(2) 由此公式（1)所計算出的公差(GAP)，可選擇適當厚度的金 ，塊，由金屬塊的厚度來調整每一晶片所承受的壓力，而 ^式(2)所計算出的公差(GAp)，可選擇適當厚度的散熱 :，由散熱層的厚度來調整每一晶片所承受的壓力，因此 I，由調整金屬塊或散漏厚度，用以防止晶片損壞及調 1曰曰片與散熱層之間距。 金屬Γ此本創作藉由在散熱片底面設置對應晶片大小的 減少二ίΐΓ片可同時移除多個晶片散發之熱量，可 的材料二、、片的作業時間，並節’ f知技術多個散熱片 上，俊’並且彻雜111定裝置將散熱^置在基板 月文…、片上的金屬塊或散熱層因彈力施壓而緊密貼合 9 1285083 100-2-24 在晶月上’有效克服習知技術的正負公差問題，進而防止 晶片損壞及散熱效率降低，最後藉由不同高度金屬塊及散 熱層與對應的晶片貼合’使多顆晶片同時藉由一散熱片進 行放熱，使基板上的晶片密集度提高，進而縮小基板面積。 以上所述係藉由實施例說明本發明之特點，其目的在 ，熟習該技術者能暸解本發明之内容並據以實施，而非限 疋本發明之專利範圍，故，凡其他未脫離本發明所揭示之 精神所心成之等效修飾或修改，仍應包含在以下所述之 凊專利範圍中。On the mounted substrate, a suitable metal block or heat sink layer is disposed according to the height and area of each chip. The most common example is when the electronic product adds other functions, which may increase the number of wafers of the substrate or change the volume of the original wafer. At this time, it is only necessary to increase or replace the metal block of appropriate size and height on the bottom surface of the original heat sink to achieve the heat dissipation effect. In addition, if the elastic component is a spring, the wire diameter, the number of turns, and the free length control heat sink can also be adjusted. Pressurize the pressure on each wafer to prevent damage to the wafer. In addition to the way of adjusting the spring, the calculated tolerance method can also be used. The formula for calculating the tolerance (GAp) is as follows: a difference (GAP)-solid seat Depth (8) - Wafer height (〇_heat dissipation layer thickness (A) - (1) a difference (GAP) - solid seat taste (s) _ wafer height (Q · metal block thickness (8) ~ (2) from this formula (1) The calculated tolerance (GAP), the appropriate thickness of gold, the block, the thickness of the metal block to adjust the pressure of each wafer, and the calculated tolerance (GAp) of (2), can choose Appropriate thickness of heat dissipation: by heat dissipation The thickness of the layer is used to adjust the pressure of each wafer, so I adjust the thickness of the metal block or the leak to prevent wafer damage and adjust the distance between the die and the heat sink. The bottom surface of the heat sink is set to reduce the size of the wafer. The heat of the plurality of wafers can be removed at the same time, the material can be used, the working time of the sheet, and the section of the heat sink can be used. The 111 device is used to place the heat sink on the substrate. The metal block or the heat dissipation layer on the chip is tightly fitted by the elastic force. 9 1285083 100-2-24 On the crystal moon, the problem of positive and negative tolerances of the conventional technology is effectively overcome. In addition, the wafer is prevented from being damaged and the heat dissipation efficiency is reduced. Finally, by bonding the different height metal blocks and the heat dissipation layer to the corresponding wafers, the plurality of wafers are simultaneously radiated by a heat sink, so that the wafer density on the substrate is increased, thereby reducing The above is a description of the features of the present invention by way of example, and it is intended to be understood by those skilled in the art The scope of the patents, therefore, equivalent modifications or modifications of the invention may be included in the scope of the invention described below.
LtUiV間旱說明】 散熱裝置之剖面示意圖。 第二圖為二統:=之剖面示意务 第三A圖；5當- 種實靶例之剖面示意圖。 意圖。 二B圖為本發明第一種實施例之製程分解六 第六圖為本發明第四種實施 【主要元件符號說明】 2 背膠 6晶片 4 散熱鰭片 10基板 8 螺絲 12 晶片 10 1285083 100-2-24 14 晶片 16 晶片 18 散熱層 20 散熱片 22 鰭片 24 固定孔 26 金屬塊 28 金屬塊 30 螺絲 32 固定座 34 螺絲 36 彈性元件LtUiV Interdiction Description] Schematic diagram of the heat sink. The second picture is the second system: the profile of the = diagram of the third A; the schematic diagram of the cross-section of the actual target. intention. FIG. 2B is a process decomposition of the first embodiment of the present invention. FIG. 6 is a fourth embodiment of the present invention. [Main component symbol description] 2 adhesive 6 wafer 4 heat dissipation fin 10 substrate 8 screw 12 wafer 10 1285083 100- 2-24 14 Wafer 16 Wafer 18 Heat sink 20 Heat sink 22 Fin 24 Mounting hole 26 Metal block 28 Metal block 30 Screw 32 Mounting seat 34 Screw 36 Elastic element
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