TWI284983B - Gate oxide process methods for high performance MOS transistors by reducing remote scattering - Google Patents

Gate oxide process methods for high performance MOS transistors by reducing remote scattering Download PDF

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Publication number
TWI284983B
TWI284983B TW092113428A TW92113428A TWI284983B TW I284983 B TWI284983 B TW I284983B TW 092113428 A TW092113428 A TW 092113428A TW 92113428 A TW92113428 A TW 92113428A TW I284983 B TWI284983 B TW I284983B
Authority
TW
Taiwan
Prior art keywords
layer
gate
thin
dielectric
gate electrode
Prior art date
Application number
TW092113428A
Other languages
English (en)
Chinese (zh)
Other versions
TW200401451A (en
Inventor
Hyeon-Seag Kim
Joong Jeon
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of TW200401451A publication Critical patent/TW200401451A/zh
Application granted granted Critical
Publication of TWI284983B publication Critical patent/TWI284983B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW092113428A 2002-05-20 2003-05-19 Gate oxide process methods for high performance MOS transistors by reducing remote scattering TWI284983B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/151,269 US6621114B1 (en) 2002-05-20 2002-05-20 MOS transistors with high-k dielectric gate insulator for reducing remote scattering

Publications (2)

Publication Number Publication Date
TW200401451A TW200401451A (en) 2004-01-16
TWI284983B true TWI284983B (en) 2007-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092113428A TWI284983B (en) 2002-05-20 2003-05-19 Gate oxide process methods for high performance MOS transistors by reducing remote scattering

Country Status (8)

Country Link
US (1) US6621114B1 (https=)
EP (1) EP1508158A2 (https=)
JP (1) JP4624782B2 (https=)
KR (1) KR100966360B1 (https=)
CN (1) CN100380576C (https=)
AU (1) AU2003230394A1 (https=)
TW (1) TWI284983B (https=)
WO (1) WO2003100835A2 (https=)

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US7432139B2 (en) * 2005-06-29 2008-10-07 Amberwave Systems Corp. Methods for forming dielectrics and metal electrodes
US20070001231A1 (en) * 2005-06-29 2007-01-04 Amberwave Systems Corporation Material systems for dielectrics and metal electrodes
US8053849B2 (en) * 2005-11-09 2011-11-08 Advanced Micro Devices, Inc. Replacement metal gate transistors with reduced gate oxide leakage
US7436034B2 (en) * 2005-12-19 2008-10-14 International Business Machines Corporation Metal oxynitride as a pFET material
US7524727B2 (en) 2005-12-30 2009-04-28 Intel Corporation Gate electrode having a capping layer
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US7582549B2 (en) 2006-08-25 2009-09-01 Micron Technology, Inc. Atomic layer deposited barium strontium titanium oxide films
US8735243B2 (en) * 2007-08-06 2014-05-27 International Business Machines Corporation FET device with stabilized threshold modifying material
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Also Published As

Publication number Publication date
CN100380576C (zh) 2008-04-09
KR20040106568A (ko) 2004-12-17
AU2003230394A1 (en) 2003-12-12
WO2003100835A3 (en) 2004-07-22
JP2005531136A (ja) 2005-10-13
TW200401451A (en) 2004-01-16
US6621114B1 (en) 2003-09-16
WO2003100835A2 (en) 2003-12-04
AU2003230394A8 (en) 2003-12-12
JP4624782B2 (ja) 2011-02-02
CN1656596A (zh) 2005-08-17
KR100966360B1 (ko) 2010-06-28
EP1508158A2 (en) 2005-02-23

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