TWI281242B - Bond pad structure for integrated circuit chip - Google Patents

Bond pad structure for integrated circuit chip Download PDF

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Publication number
TWI281242B
TWI281242B TW094135258A TW94135258A TWI281242B TW I281242 B TWI281242 B TW I281242B TW 094135258 A TW094135258 A TW 094135258A TW 94135258 A TW94135258 A TW 94135258A TW I281242 B TWI281242 B TW I281242B
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Taiwan
Prior art keywords
metal plate
appearance area
integrated circuit
bonding pad
area
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TW094135258A
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English (en)
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TW200629508A (en
Inventor
Hsien-Wei Chen
Original Assignee
Taiwan Semiconductor Mfg
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Publication of TW200629508A publication Critical patent/TW200629508A/zh
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Publication of TWI281242B publication Critical patent/TWI281242B/zh

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Description

1281242 九、發明說明
【發明所屬之技術領域】 本發明是有關於積體電路晶片之黏接墊結構。更特別 地是，本發明是與一種可防止内連接剝離且可增進黏接能 力之黏接墊結構有關。 【先前技術】 積體電路晶片常需透過線路（例如：金或鋁線）電性 連接至一封裝基板或支架來與外部信號進行交換。這種連 線一般是使用熱壓縮或超音波震動之方法被連接至一積 體電路晶片之黏接墊上。這種連線製程常會施加熱和機械 應力至黏接墊和位於黏接墊下方之層及結構上。因此，黏 接墊結構需能承受這些應力，如此才能確保黏接墊不受損 壞，以免危害到積體電路晶片本身。 一種可替代之黏接墊結構係從底部向頂層進行製 造，此種結構不允許金屬線路或半導體元件穿越黏接墊或 位於黏接墊下方。為了能較有效率的使用晶片或降低晶片 之尺寸，金屬線路或半導體元件需位於黏接墊下方。這種 結構被稱為黏接墊位於主動線路上（bond over active circuits，BOAC)或線路位於黏接塾下（circuits under pad， CUP )。現今，許多製程係使用低介電常數或超低介電常 數材料來形成内金屬介電層 （intermetal dielectric， IMD )，藉以降低電阻電容延遲時間和寄生電容。這種趨 勢造成IMD在設計上會讓介電常數值由頂層朝向基板逐 1281242 =材=當介電常數值降低時，依-般原理，會造 風"虿材科強度下降。因此， 曰坆 成破裂，或缺乏能抵擋某些機械製程造 械研磨製程）所需之強度 ·H戈機 外，其黏和強度亦不佳電吊數材料除了強度不佳 對锡=傳線製程中，黏接墊結構需能於進行黏結 常數層之破裂。除此之外，當連線被-黏 财：二 進行與黏接塾之連線時，此時黏接墊結 =必須能抵播這種連線時之拉力和扭力。這些力量常會 2黏接墊結構之剝離或錯位。因此，亟需一種於進行黏 料，可承受且可分散黏線所產生應力之黏接墊結構，且 :黏接墊結構亦係由低介電常數材料來形成内金屬介電 s。且此結構亦允許電路和何體元件位於黏接墊下方。 【發明内容】 如上所提出之問題和需求可以下述之實施例加以解 、根據本發明之一特徵，提供一積體電路晶片，其中此 2片包括一黏接墊結構。此黏接墊結構包括一黏接墊、一 第—金屬板和一第二金屬板。此第一金屬板位於黏接墊下 此第一金屬板具有一第一外觀面積。第二金屬板位於 第—金屬板下方。因此，第一金屬板和第二金屬板聚積而 成2頂視外型區域大於第一金屬板之第一外觀面積。此第 一金屬板亦具有一第二外觀面積，其面積係實質上大於或 1281242 等於此第一外觀面積。一第一垂直軸係從第一金屬板之質 量中心延展而出，且第二金屬板之質量中心係側偏於第一 垂直軸。且，一第二垂直轴係從第二金屬板之質量中心延 展而出。一弟二金屬板（亦屬於黏接墊結構）係位於第二 金屬板下方。此第三金屬板具有一第三外觀面積，其面積 係實質上大於或等於此第一外觀面積，且第三金屬板之質 i中〜係側偏於第一垂直軸。第三外觀面積面積係實質上 大於或等於此第二外觀面積，且第三金屬板之質量中心係 侧偏於第二垂直軸。第一、第二和第三金屬板聚積而成之 頂視外型區域大於第三外觀面積。此黏接墊結構更包含一 位於第二金屬板下方之第三金屬板’藉以使得第一、第二 和第三金屬板聚積而成之頂視外型區域大於第一金屬板 之第一外觀面積。例如，此第一金屬板可具有一空的中間 4为、形成於其中之狹縫或是為一固體實板結構。此黏接 墊結構更可包含複數個介層連接洞位於第—金屬板和第 二金屬板間。此黏接墊具有—黏接墊外型區，且第一外觀 面積面積係實質上大於或等於此接墊外型區。此第二金屬 板具有-第二外觀面積，且第二外觀面積面積大於第一外 硯：積。此黏接塾結構更包含一位於第二金屬板下方之第 :盘屬板，此第三金屬板具有一第三外觀面積，且第三外 觀面積面積大於第二外_ 黏接塾結構之下積。此晶片至少一部份係位於 此曰：^本么月之另一特徵’提供-積體電路晶片，A t 此日日片包括一黏接藝姓 Ψ 、、、口構。此黏接執钴搂包括一黏接墊、 !281242 第*屬板和一第二金屬板。此第一金屬板位於黏接墊 下方。一第一垂直軸係從第一金屬板之質量中心延展而 ^。第二金屬板係位於第一金屬板下方，且第二金屬板之 質量中心係側偏於第一垂直軸。 根據本發明之又一特徵，提供一積體電路晶片，其中 此=片包括一黏接墊結構。此黏接墊結構包括一黏接墊、 第 第一和一第三金屬板。此第一金屬板位於黏接 墊下方。此第一金屬板具有一第一外觀面積。一第一垂直 軸係k第一金屬板之質量中心延展而出。第二金屬板係位 於第-金屬板下方。Λ第二金屬板具有一第二外觀面積。 此第二^卜觀面積面積係實質上大於或等於此第一外觀面 積且第一金屬板之質量中心係侧偏於第一垂直軸。一第 ^直軸係彳欠第二金屬板之質量中心延展而出。第三金 板係位於第-I厪4 、 。*弟—孟屬板下方。此第三金屬板具有一第三外觀 〇 、 第一外觀面積面積係實質上大於或等於此第一外 觀：積1第二金屬板之質量中心係側偏於第一垂直軸。 此弟二外觀面積面積係實f上大於或等於
穑，曰筮一人0 I桃W 、 二金屬板之質量中心係側偏於第二垂直軸。因 此赘第'一、裳 _ 斤 一和第二金屬板聚積而成之頂視外型區域大 於第三外觀面積。 本毛明之再一特徵，提供一積體電路晶片，其中 一第二Γ括Γ黏接墊結構。此黏接墊結構包括一黏接墊、 墊下方。此=二和—第三金屬板。此第—金屬板位於黏接 一金屬板具有一第一外觀面積。第二金屬板 1281242 係位於第一金屬板下方。此第二金屬板具有一第二外觀面 積。此弟一外觀面積面積係大於此第一外觀面積。第三金 屬板係位於第二金屬板下方。此第三金屬板具有一第三外 觀面積。此第三外觀面積面積係大於此第二外觀面積。 根據本發明之再一特徵，提供一積體電路晶片，其中 此晶片包括一第一黏接墊結構和一第二黏接墊結構。此第 一黏接墊結構包括一第一黏接墊、一第一 M1金屬板和一 第一 M2金屬板。此第一 Μι金屬板位於mi金屬層。一 第一垂直軸係從第一 M1金屬板之質量中心延展而出。此 第M2金屬板位於M2金屬層。此M2金屬層位於Ml 金屬層下方。此第一 M2金屬板位於第一 M1金屬板下 方。第一 M2金屬板之質量中心係側偏於第一垂直軸。此 第^黏接墊結構包括一第二黏接墊、一第二Μ〗金屬板和 一=二M2金屬板。此第二M1金屬板位於乂丨金屬層。 =一垂直軸係從第二M1金屬板之質量中心延展而出。 此：二M2金屬板位於M2金屬層。此第二M2金屬板位 於弟二M1金屬板下方。第二組金屬板之質量中心係側 偏於第一垂直軸。此第一 M1金屬板係鄰接於沿著第一側 佈1 : : — M1金屬板形成’而此第-側偏軸係遵循M1 全屬距來沿者之M1金屬層進行延展。此第- M2 主屬板係鄰接於沿著第一你丨低 而此笛。 者弟一側偏轴之第^ M2金屬板形成， “二側偏軸係遵循Μ2佈局圖案間距來沿著M2金屬 曰進仃延展。此⑷佈局圖案 圖案間距。 灵貝上相同於M2佈局 9 1281242 根據本發明之再一實施例，提供一種製造包括一黏接 墊結構之積體電路晶片方法。此方法包括描述於下列段落 中之步驟。&些步驟之順序可加以改變。此黏接墊結構包 括-黏接塾、-第-金屬板和一第：金屬才反。形成此黏接 ' 墊結構之第二金屬板。形成此黏接墊結構之第一金屬板。 • 此第一金屬板係位於第二金屬板之上方。此第一金屬板具 有一第一外觀面積。第一金屬板和第二金屬板聚積而成之 • 頂視外觀面積大於第一金屬板之第—外觀面積。形成此黏 接墊結構之黏接墊。此黏接墊位於第一金屬板上方。 根據本發明之再一實施例，提供一種製造包括一黏接 墊結構之積體電路晶片方法。此方法包括描述於下列段落 中之步驟。這些步驟之順序可加以改變。此黏接塾結構包 括-黏接墊、-第-金屬板和一第二金屬板。形成此黏接 墊結構之第二金屬板。形成此黏接墊結構之第一金屬板。 此第一金屬板係位於第二金屬板之上方。一第一垂直軸係 • 從第一金屬板之質量中心延展而出。第二金屬板之質量中 心係側偏於第一垂直車由。形&此黏接塾結構之黏接塾。此 - 黏接墊位於第一金屬板上方。 : 上述以概略描述出本發明之特徵點，在參閱其後之詳 細說明將可更加瞭解本發明。本發明之額外特點和優點將 詳述於其後，並藉以形成本發明申請專利範圍之權利。值 得注意的是，當一熟習該項技藝者在瞭解本發明之技術特 點’將可利用本發明作為基礎，來發展出其他之結構或製 f* 這種進步之擴展並未脫離本發明之精神和範嘴。 1281242 第一實施例中這些金屬板4卜42和43之一簡化上視圖。 第一金屬板41係位於黏接墊38之下方。第一金屬板41 具有一第一外觀面積71。此第一外觀面積71於第4圖中 係以虛線表示。一板之“外觀面積，，係為一金屬板上視圖 之外型所圈出之面積。因此，於後述所討論者，不論一金 屬板中是否存有缝隙或孔洞均不會影響外觀面積。 如第4圖所示第一實施例之第一金屬板41具有一空 的中心部分54，其類似於第2圖黏接墊結構22之設計。 此t空之中心部分54將由圍繞於IMD層周圍之介電材料 來加以填充。 如第3圖所示，第二金屬板42係位於第一金屬板41 =下方。如第4圖之上視圖所示，第二金屬板42具有一 第二外觀面積72。此第二外觀面積72於第4圖中係以虛 線表示。在第一實施例中，第二金屬才反42之第二外觀： 積72係大於第一金屬板41之第一外觀面積7ι。然而， 在其他之實施例中，第二金屬板42之第二外觀面積Μ 可實質大於或等於第一金屬板41之第一外觀面積71。第 一組連接洞51係位於第二金屬板42和第一金屬板41 間，用以提供第二金屬板42和第一金屬板41之機械性連 接。雖然，較佳地於本發明之一實施例中可選擇性使用第 一組連接洞51。此外，在其他之實施例中，關於第一組 連接/同51之置放位置、形狀、大小、填充材料和其數目 均可加以變動。 如第3圖所示，第三金屬板43係位於第二金屬板c 13 1281242 ，：方。如第4圖之上視圖所示’第三金屬板43具有— 第二外觀面積73。此第三外觀面積73於第 線表示。在第-實施例中，第三金屬…第三外觀= 積73係大於第二金屬板42之第二外觀面積η。缺而， 在其他之實施例中，三金屬板43之第三外觀面積7s可每 質大於或等於第二金屬板42之第二外觀面積72。此外： 在第—實施例中，第三金屬板43之第三外觀面積73係大 :第-金屬板41之第一外觀面積71。然而，在其他之實 :例中，第三金屬板43之第三外觀面積73可實質大於或 專於第一金屬板41之第-外觀面積71。第二組連接洞” 係位於第二金屬板42和第三金屬板43間，用以提供第二 金屬板42和第三金屬板43之機械性連接。雖然，較佳地 於本發明之—實施例中可選擇性使用第：組連接洞52。 此外’在其他之實施例中，關於第二組連接洞52之置放 位置、形狀 '大小、填充材料和其數目均可加以變動。 接著，比較第2圖與第4圖，將呈現出為何第一且體 實施例中之黏接墊結構61具有比第2圖所示黏接墊結構 增進:效能。第2圖中顯示出—由-第-金屬板41、第 二金屬板42和第三金屬板43所堆積而成之上視圖76。 相似於第^，於第二圖中，第二金屬板42和第三金屬 板二係位於第一金屬板41之下方。其後將以-簡化之方 7解說此部分：值得注意的是，第二金屬板 42之弟一外觀面積72和第三金屬板杓之第三外觀面積 73,於弟i圖和第2圖之基板22上，係實質上分別等於 14 1281242 第一金屬板41之第一外觀面積71。在第2圖中，由第一 金屬板41、第二金屬板42和第三金屬板43所堆積而成 之上視外觀面積80’係實質上等於第一金屬板41之第一 外觀面積71，而於第4圖中，第一金屬板41、第二金屬 板42和第二金屬板43係堆積成上視圖76。於第2圖與 第4圖中，上視外觀面積8〇係由一粗實線來加以表示。 於第-實施例中’如第4圖所示，由第一金屬板41、第 二金屬板42和第三金屬板43所堆積而成之上視外觀面積 8〇,係實質上大於第一金屬板41之第一外觀面積71。 此外，第-實施例中，如第4圖所示，由第一金屬板 4卜第二金屬板π和第三金屬板43所堆積而成之上視外 觀面積80,係大於第2圖中黏接塾結構^之上視外觀面 積80因此，為了时論和比較之目的，假設所有之因素， 如黏接墊和第-金屬板之材料、大小和形狀係相同，則第 一實施例之黏接墊結構61，因為比第i圖和第2圖所示 之黏接墊結構22具有較大之上視外觀面積8〇，因此可提 =一較強之結構’藉以抵檔，例如於進行黏結時，施加於 ;丈之Π?。其:後將以—簡化之方程式來進-步解說此 二=得注意的是’第4圖中所示之第一實施 ^W1疋大於第2圖中所示之尺寸·。雖然，第4圖令 第一實施例所示之上視外觀面積8〇僅在一方 们和W〇,大於第2圖中黏接塾結構22之上視^卜觀面： 8〇’但是於其他之實施例中，於其他之方向上、 面積80亦可能是較大的。 視外觀 15 1281242 由於晶圓上黏接墊結構6 1之密度關係，在鄰接之黏 接墊結構61間，第3圖中之尺寸P3需加以考慮，因為其 會影響鄰接黏接墊結構6 1之放大第三金屬板43間之空間 S1 ’如第3圖所示。對於鄰接放大第三金屬板43間之空
間s1大小會造成限制之原因有，例如，黏接墊結構6 J 之放大第三金屬板43。當尺寸P3因晶圓之設計而縮小 時，第三金屬板43可被放大之尺寸將會被限制。在另一 實施例中（未圖式），第二金屬板42和第三金屬板43可 有一比第一金屬板41還大之外觀面積72和73，當第二 金屬板42和第三金屬板43有一實質上相同之外觀面積 72 和 73 〇 為了讨論之目的，一假設之第一垂直軸8 1係從第一 金屬板41之質量中心延展而出，如第3圖和第4圖‘所示。 於第一實施例中，此第一垂直軸8丨亦從第二金屬板42 延展而出，且穿過第三金屬板43之質量中心。然而，在 另一實施例中，此第二金屬板42和/或第三金屬板43之 質量中心係側偏於第一垂直軸8 1。 根據本發明之其他實施例，黏接墊6丨之上視外觀面 積80可以其他之方式來加大。例如，如第5圖和第6圖 不之本發明第二實施例，其展示以另一種方法來增加黏 接墊62之上視外觀面積8〇。在此第二實施例中，第二金 屬板42和第三金屬板43具有一跟第一金屬板41實質上 相等之外觀面積72和73。一第一垂直軸81係從卜金 屬板之質量中心延展而出。一第二垂直軸82係從第二 16 1281242
金屬板42之質量中心延展而出。於此實施例中，第二金 屬板42之質量中心係側偏於第一垂直軸8 1。而且，第二 實施例中之第三金屬板43之質量中心93係側偏於第一垂 直軸81和第二垂直軸82。因此，藉由如第6圖中所示之 側偏，黏接墊62之上視外觀面積8〇可加大。在第6圖中 係繪示一上視圖，其中第二金屬板42和第三金屬板43 係位於第一金屬板41之下方。其中，第6圖中，上視外 觀面積80係由一粗實線來加以表示。 比較第2圖和第6圖，第6圖所示之第二實施例，並 上視外觀面積8G，係實質上大於第2圖所示之上視外觀 面積80。因此，若假設所有之因素，如黏接墊和第—金 屬板之材料、大小和形狀係相同，則第 結構-因為比D圖和第2圖所示之黏接墊結構 :較大之上視外觀面積8〇，因此可提供一較強之結構:、 猎以抵檔，例如於進行㈣時，施加於其上之施加力。盆 後將以-簡化之方程式來進_步解說此部分。亦值得注^ 的是，第6圖中所示之第二實施例，尺寸12是大於第^ HZ Γ之尺寸WG °雖然’第6圖中第二實施例所示之 2外硯面積80僅在-方向上，即·，大於第2 圖t黏接墊結構22之上葙外瀚品蚀 、弟2 施例中，於其他之方向 積8〇,但是於其他之實 大的。 〇 i視外硯面積80亦可能是較 苴上視外顴而接丨不黏接墊結構62 外觀面積80可在每-金屬層尺寸均相同之情況下 17 1281242 加以增加。易言之，第— ^ ^ ^ 弟一實她例之優點為，在不增加鄰接 之黏接墊結構02之尺寸产裕丁 州佼 八m f月形下’以及在不減少位於相同
金屬層之鄰接第三金厪此叫 ^ J oft 、 屬板間之二間情形下，上視外觀面積 0可加以增加。在第S岡 - 夕 > 弟圖顯不於鄰接之黏接墊結構62間
62l金乂板佈局一時之尺’ P1，同時亦•示黏接墊結構 Ρτ/之Λ二—和第三金屬板42和43佈局時之尺寸^和 。如弟二實施例所示，於不同金屬層間之尺彳Η、Μ 可彼此相等’但於其他實施例中可彼此不相同。在 ’、Κ施例中，任合金屬層間或復合金屬層間之尺寸可彼 相同亦可彼此不同。在許多之情形下，在每一金屬層之 尺寸上具相同之大小是較佳地。 、然而，於其他之實施例中（未圖式），第一垂直軸81 矛/或第一垂直軸82可穿越第三金屬板43之質量中心。 此外，於另外之實施例中（未圖式），第一垂直軸81係穿 越第二金屬板42之質量中心，亦即第一垂直軸8 (和第二 ^直軸82係在同一直線上，此時，第三金屬板43之質 1中心93係側偏於第一以及第二垂直軸81和82。而於 另實施例中（未圖式），第一垂直軸81係穿越第三金屬 板43之貝Η中心93，此時，第二金屬板42之質量中心 係侧偏於第一垂直軸8 1。 雖然，第一以及第二實施例中，所展示之金屬板41、 42和43具有長方形之外觀面積，但這些僅為一例示。在 本發明之其他實施例中，金屬板41、42和43中之任一金 屬板可具有合適形狀之外觀面積。此外，第一以及第二實 18 1281242 F2 = σ1Α2 因此’當等效面積（Α2)增加時，亦即，上視外觀面 積增加，黏接墊結構可抵擋之最大之張力（F2 )亦隨之增 加。抵擋力增加之百分率可由面積增加之大小（ΔΑ)來加以 表示，其中Α2=Α1+ΔΑ: 抵播力增加之百分率（％ reinf〇rcement ) =(F2 - FI) / F1 = (σ1Α2- σ1Α1)/σ1Α1= (A2 — Al) / A1 =(ΔΑ + A1 - Al) / A1 = ΔΑ / A1 面積之增加亦可以下式表示： ΔΑ = χ Α2 其中X為一實施例之上視外觀面積比例，在如此之 情況中，抵擋力增加之百分率可由下式表示： 抵播力增加之百分率％ reinforcement =ΔΑ / Αι = χ α2 / Αι 第8圖中顯示三條曲線分別代表三種實施例下所形 成之黏接墊結構’藉由增加額外面積△ A或比率χ，其可 增加之抵擋力百分率。第8圖中之第一條曲線丨丨丨係代表 一實施例中其第一、第二和第三金屬板41、42和43為實 心結構。第8圖中之第二條曲線112係代表一實施例中， 21 1281242 ί圖第二ΐ二和第三金屬板41、42和43為實心結構。第 板41且有—條曲線112係代表—實施例中，其第一金屬 ，、有一縫隙，而第二和第二 結構。以及，笛μ 和43為實心 中，盆第_ ®中之弟二條曲線113係代表-實施例 :金屬Γ4:屬板41具有空的中間部分54,而第二和第 :子所結構。如第8圖所示以及上述之 斤迷1等效可拉面積增加時 視外觀面穑sn^ tt 饮父、、、口稱4上 積80增加’其抵擋力之百分率亦可增加。 有關於本發明實施例所使用 43和％可由相同或不同之材料來加材二H41、42、 何合適不同之材料形成。-金屬板可由任 、、、。構性材料來加以形成’例如 銅、銘、鈦、鎢、或其合金、或其複A物…不限疋為 1目：的二於一實施例中黏接墊結構之黏接墊部分且38口:可 二何合適之結構性材料來加以形成，例如 相、銘、鈦、鶴、或其合金、或其複合 ：:疋 此外，連接洞51釦59介*τι, Α具組合物。 ，，例如包括但=適鈦之加 材:其組合物。圍繞於黏接墊結構或為於 :下 但…:::電 介電材枓紅“ 〃，丨電材枓、超低介電常數述之 電材枓、乳化物、繼、氮氡化物和其組合物。 雖然，圖式或說明書中所描述者為位於三層 屬板，但黏接墊結構亦可例如僅具有位於兩層中之兩Γ屬 22 1281242 板。此外，於其他之實施例中，黏接墊結構亦可具有位於 不同層中之四、五或六金屬板。 本發明的許多不同實施例或應用本發明不同特徵之 實施例已被描述於其上。藉由描述特定之實施例部分和其 製程步驟，可對本發明做清楚之界定。當然，上述僅為本 發明眾多實施例巾之—部份，並非用以限制本發明僅能應 用於上述之實施例中。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和粑圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上 顯易懂，下文特舉一 細說明如下： 述和其他目的、特徵、和優點能更明 較佳實施例，並配合所附圖式，作詳 電二1之圖二為一二有可替換黏接陶 第2圖：黏接墊下方設計有—電路結構； 回、不為弟1圖之黏接墊結構中，不同層中之人 屬板、、、口構上視圖； 至 弟3圖戶斤示為根據本發明第一實施例之一罝 塾結構之部分積體電路晶片之剖視圖； ，、有黏接 弟4圖所示為第3圖之黏接墊結構中，位於不同層中 23 1281242 5 4中心部分 7 1第一外觀面積 72第二外觀面積 73第三外觀面積 76上視圖 80上視外觀面積 8 1第一垂直軸 82第二垂直軸 93質量中心 98金屬板 99外觀面積 100縫隙 PI、P2以及P3尺寸
25

Claims (1)

1281242 麟;:识:丨:怼:::禅:溪鐵矮發·簽沒:;鑛:驗黎兹 、十、'.讀::事:_範.厨:振 疆l:i:懸纖鐵i鍵ί識i懸観霧綴驗题讎:鷄發^ 1. 一至少包含一黏接墊結構之積體電路晶片，其中該 黏接墊結構至少包括： 一黏接塾， 一第一金屬板位於該黏接墊下方，其中該第一金屬板 具有一第一外觀面積；以及 一第二金屬板位於該第一金屬板下方，其中該第一金 屬板和該第二金屬板聚積而成之頂視外觀面積大於該第 一金屬板之該第一外觀面積。 2. 如申請專利範圍第1項所述之積體電路晶片，其中 該第二金屬板具有一第二外觀面積，該第二外觀面積實質 上大於或等於該第一外觀面積。 3. 如申請專利範圍第2項所述之積體電路晶片，其中 一第一垂直軸從該第一金屬板之質量中心延展而出，該第 二金屬板之質量中心係側偏於該第一垂直軸。 4. 如申請專利範圍第1項所述之積體電路晶片，其中 該黏接墊結構更包含一第三金屬板係位於第二金屬板下 方，其中該第一、該第二和該第三金屬板聚積而成之頂視 外觀面積大於該第一金屬板之該第一外觀面積。 26 1281242 5 ·如申請專利範圍第1項所述之積體電路晶片，其中 該黏接墊結構更包含一第三金屬板係位於第二金屬板下 方’其中該第一、該第二和該第三金屬板聚積而成之頂視 外觀面積大於該第一金屬板之該第一外觀面積，且該第 、該第二和該第三金屬板聚積而成之頂視外觀面積大於 該第二金屬板之該第二外觀面積。 • 6.如申請專利範圍第1項所述之積體電路晶片，其中 該黏接墊結構更包含一第三金屬板係位於第二金屬板下 方’其中該第一、該第二和該第三金屬板聚積而成之頂視 外觀面積大於該第一金屬板之該第一外觀面積，且該第 一、該第二和該第三金屬板聚積而成之頂視外觀面積大於 該第二金屬板之該第二外觀面積，且該第一、該第二和該 弟二金屬板聚積而成之頂視外觀面積大於該第三金屬板 之該第三外觀面積。 7·如申睛專利範圍第1項所述之積體電路晶片，其中 :該第一金屬板具有一中空部分。 8·如申請專利範圍第1項所述之積體電路晶片，其中 該第一金屬板具有形成於其中之缝隙。 9·如申請專利範圍第1項所述之積體電路晶片，其中 該弟金屬板為實心構造。 27 1281242 1 〇 ·如申請專利範圍第1項所述之積體電路晶片，其 中該黏接墊結構更包含連接洞位於該第一金屬板和該第 ，—金屬板間。 11_如申請專利範圍第1項所述之積體電路晶片，其 中該黏接墊具有一黏接墊外觀面積，且其中該第一外觀面 積實質上等於或大於該黏接塾外觀面積。 12·如申請專利範圍第丨項所述之積體電路晶片，更 包含至少部分之積體電路係位於黏接墊結構下方。 13 ·如申請專利範圍第丨項所述之積體電路晶片，其 中該黏接塾、該弟一金屬板和該第二金屬板係電性連接。 14· 一至少包含一黏接墊結構之積體電路晶片，其中 該黏接墊結構至少包括： 一黏接墊； 一第一金屬板位於該黏接墊下方，其中一第一垂直轴 從該第一金屬板之質量中心延展而出；以及 一弟一金屬板位於該第一金屬板下方，其中該第二金 屬板之質量中心係侧偏於該第一垂直軸。 1 5 ·如申請專利範圍第14項所述之積體電路晶片， 28 1281242 其中該第-金屬板具有一第一外觀面積，該第二金屬板具 有-第二外觀面積，該第二外觀面積冑質上大於或等於該 第一外觀面積。 16·如申明專利範圍第15項所述之積體電路晶片， 其中-第一垂直軸從該第二金屬板之質量中心延展而 出，且其中該黏接墊結構更包含一第三金屬板係位於第二 金屬板下方’該第三金屬板具有一第三外觀面積，該第三 外觀面積係實質上大於或等於該第—外觀面積，且該第三 金屬板之質量中心係側偏於該第一垂直軸，該第三外觀面 積面積係實質上大於或等於該第二外觀面積，且該第三金 屬板之質量中心係侧偏於該第二垂直軸，且其中該第一、 該第二和該第三金屬板聚積而成之頂視外觀面積大於該 第三外觀面積。 φ 17_ 一至少包含一黏接墊結構之積體電路晶片，其中 該黏接墊結構至少包括： 一黏接墊； 一第一金屬板位於該黏接墊下方，其中該第一金屬板 具有一第一外觀面積； 一第二金屬板位於該第一金屬板下方，其中該第二金 屬板具有一第二外觀面積，該第二外觀面積大於該第一外 觀面積；以及 一第三金脣板位於該第二金屬板下方，其中該第三金 29 1281242 屬板具有一第三外觀面積，該第三外觀面積大於該第二外 觀面積。 18.如申請專利範圍第17項所述之積體電路晶片， 其中一第一垂直軸從該第一金屬板之質量中心延展而出 且穿越該第二金屬板之質量中心。 φ 19.如申請專利範圍第17項所述之積體電路晶片， 其中該黏接墊結構更包含第一組連接洞位於該第一金屬 板和該第二金屬板間。 20.如申請專利範圍第17項所述之積體電路晶片， 其中該黏接墊具有一黏接墊外觀面積，且其中該第一外觀 面積實質上等於或大於該黏接墊外觀面積。 30
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