TWI279872B - Abnormal photoresist line/space profile detection through signal processing of metrology waveform - Google Patents

Abnormal photoresist line/space profile detection through signal processing of metrology waveform Download PDF

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Publication number
TWI279872B
TWI279872B TW092108571A TW92108571A TWI279872B TW I279872 B TWI279872 B TW I279872B TW 092108571 A TW092108571 A TW 092108571A TW 92108571 A TW92108571 A TW 92108571A TW I279872 B TWI279872 B TW I279872B
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TW
Taiwan
Prior art keywords
waveform
characteristic
features
width
space
Prior art date
Application number
TW092108571A
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English (en)
Chinese (zh)
Other versions
TW200409261A (en
Inventor
Erik Cho Houge
Scott Jessen
John Martin Mcintosh
Catherine Vartuli
Fred Anthony Stevie
Original Assignee
Agere Systems Inc
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Publication date
Application filed by Agere Systems Inc filed Critical Agere Systems Inc
Publication of TW200409261A publication Critical patent/TW200409261A/zh
Application granted granted Critical
Publication of TWI279872B publication Critical patent/TWI279872B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW092108571A 2002-05-24 2003-04-14 Abnormal photoresist line/space profile detection through signal processing of metrology waveform TWI279872B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/156,242 US6708574B2 (en) 2002-05-24 2002-05-24 Abnormal photoresist line/space profile detection through signal processing of metrology waveform

Publications (2)

Publication Number Publication Date
TW200409261A TW200409261A (en) 2004-06-01
TWI279872B true TWI279872B (en) 2007-04-21

Family

ID=22558716

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092108571A TWI279872B (en) 2002-05-24 2003-04-14 Abnormal photoresist line/space profile detection through signal processing of metrology waveform

Country Status (5)

Country Link
US (1) US6708574B2 (https=)
JP (1) JP4964400B2 (https=)
KR (1) KR101003958B1 (https=)
GB (1) GB2392310B (https=)
TW (1) TWI279872B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031721B4 (de) * 2004-06-30 2006-06-29 Infineon Technologies Ag Verfahren und Vorrichtung zur automatischen Inspektion von strukturierten Halbleiteroberflächen
JP2011192837A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 評価装置および評価方法
CN119108296B (zh) * 2024-09-03 2025-10-03 浙江创芯集成电路有限公司 半导体结构的量测分析方法和装置、可读存储介质

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JPS6195540A (ja) * 1984-10-17 1986-05-14 Hitachi Ltd 外観検査装置
JPS6275206A (ja) * 1985-09-30 1987-04-07 Hitachi Ltd 電子ビ−ム測長装置
US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
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JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
US5665968A (en) * 1992-05-27 1997-09-09 Kla Instruments Corporation Inspecting optical masks with electron beam microscopy
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
US5642158A (en) * 1994-05-02 1997-06-24 Cognex Corporation Method and apparatus to detect capillary indentations
JP3589365B2 (ja) * 1996-02-02 2004-11-17 富士写真フイルム株式会社 ポジ画像形成組成物
US5969273A (en) * 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
US6426501B1 (en) * 1998-05-27 2002-07-30 Jeol Ltd. Defect-review SEM, reference sample for adjustment thereof, method for adjustment thereof, and method of inspecting contact holes
JPH11345754A (ja) * 1998-06-01 1999-12-14 Matsushita Electron Corp 半導体装置の検査方法及び製造方法
KR20000004485A (ko) * 1998-06-30 2000-01-25 김영환 반도체 소자의 미세패턴 형성방법
US6324298B1 (en) * 1998-07-15 2001-11-27 August Technology Corp. Automated wafer defect inspection system and a process of performing such inspection
US6337174B1 (en) * 1998-09-17 2002-01-08 Samsung Electronics Co., Ltd. Method of stripping a photoresist from a semiconductor substrate dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide
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US6258610B1 (en) * 1999-07-02 2001-07-10 Agere Systems Guardian Corp. Method analyzing a semiconductor surface using line width metrology with auto-correlation operation
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KR100314131B1 (ko) * 1999-10-16 2001-11-15 윤종용 도전성 패턴 결함을 선택적으로 검사하는 웨이퍼 검사시스템 및 그 검사방법
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Also Published As

Publication number Publication date
GB2392310A (en) 2004-02-25
GB0308961D0 (en) 2003-05-28
JP2003347377A (ja) 2003-12-05
US20030219916A1 (en) 2003-11-27
KR101003958B1 (ko) 2010-12-30
KR20030091785A (ko) 2003-12-03
JP4964400B2 (ja) 2012-06-27
TW200409261A (en) 2004-06-01
GB2392310B (en) 2005-09-21
US6708574B2 (en) 2004-03-23

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