KR101003958B1 - 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 - Google Patents

메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 Download PDF

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KR101003958B1
KR101003958B1 KR1020030033218A KR20030033218A KR101003958B1 KR 101003958 B1 KR101003958 B1 KR 101003958B1 KR 1020030033218 A KR1020030033218 A KR 1020030033218A KR 20030033218 A KR20030033218 A KR 20030033218A KR 101003958 B1 KR101003958 B1 KR 101003958B1
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South Korea
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waveform
feature
features
metrology
patterned
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Korean (ko)
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KR20030091785A (ko
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휴즈에릭초
제슨스코트
매킨토시존마틴
바르툴리카트린
스티비프레드안토니
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에이저 시스템즈 인크
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Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020030033218A 2002-05-24 2003-05-24 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 Expired - Fee Related KR101003958B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/156,242 2002-05-24
US10/156,242 US6708574B2 (en) 2002-05-24 2002-05-24 Abnormal photoresist line/space profile detection through signal processing of metrology waveform

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KR20030091785A KR20030091785A (ko) 2003-12-03
KR101003958B1 true KR101003958B1 (ko) 2010-12-30

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KR1020030033218A Expired - Fee Related KR101003958B1 (ko) 2002-05-24 2003-05-24 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출

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US (1) US6708574B2 (https=)
JP (1) JP4964400B2 (https=)
KR (1) KR101003958B1 (https=)
GB (1) GB2392310B (https=)
TW (1) TWI279872B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031721B4 (de) * 2004-06-30 2006-06-29 Infineon Technologies Ag Verfahren und Vorrichtung zur automatischen Inspektion von strukturierten Halbleiteroberflächen
JP2011192837A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 評価装置および評価方法
CN119108296B (zh) * 2024-09-03 2025-10-03 浙江创芯集成电路有限公司 半导体结构的量测分析方法和装置、可读存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001272219A (ja) 2000-03-24 2001-10-05 Fujitsu Ltd 線幅測定方法
KR100314131B1 (ko) 1999-10-16 2001-11-15 윤종용 도전성 패턴 결함을 선택적으로 검사하는 웨이퍼 검사시스템 및 그 검사방법

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JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
US5642158A (en) * 1994-05-02 1997-06-24 Cognex Corporation Method and apparatus to detect capillary indentations
JP3589365B2 (ja) * 1996-02-02 2004-11-17 富士写真フイルム株式会社 ポジ画像形成組成物
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KR100314131B1 (ko) 1999-10-16 2001-11-15 윤종용 도전성 패턴 결함을 선택적으로 검사하는 웨이퍼 검사시스템 및 그 검사방법
JP2001272219A (ja) 2000-03-24 2001-10-05 Fujitsu Ltd 線幅測定方法

Also Published As

Publication number Publication date
GB2392310A (en) 2004-02-25
GB0308961D0 (en) 2003-05-28
JP2003347377A (ja) 2003-12-05
US20030219916A1 (en) 2003-11-27
TWI279872B (en) 2007-04-21
KR20030091785A (ko) 2003-12-03
JP4964400B2 (ja) 2012-06-27
TW200409261A (en) 2004-06-01
GB2392310B (en) 2005-09-21
US6708574B2 (en) 2004-03-23

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