TWI278007B - Thin film transistor and its manufacturing method - Google Patents
Thin film transistor and its manufacturing method Download PDFInfo
- Publication number
- TWI278007B TWI278007B TW093120578A TW93120578A TWI278007B TW I278007 B TWI278007 B TW I278007B TW 093120578 A TW093120578 A TW 093120578A TW 93120578 A TW93120578 A TW 93120578A TW I278007 B TWI278007 B TW I278007B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- forming
- substrate
- laser
- ruthenium
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 647
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 80
- 229910052707 ruthenium Inorganic materials 0.000 claims description 80
- 230000001681 protective effect Effects 0.000 claims description 70
- 239000004575 stone Substances 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 30
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 30
- 238000005496 tempering Methods 0.000 claims description 28
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 20
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000000206 photolithography Methods 0.000 claims description 15
- 210000003298 dental enamel Anatomy 0.000 claims description 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910000078 germane Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000002161 passivation Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000011247 coating layer Substances 0.000 abstract 2
- 238000005224 laser annealing Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 39
- 230000015572 biosynthetic process Effects 0.000 description 37
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 33
- 239000013078 crystal Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 238000005234 chemical deposition Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910001566 austenite Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 206010036790 Productive cough Diseases 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 210000003802 sputum Anatomy 0.000 description 3
- 208000024794 sputum Diseases 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- LEWPTLXFUJDZPB-UHFFFAOYSA-N 1-but-3-enoxy-2,3,3,4,4,5,5-heptafluorocyclopentene Chemical compound FC1=C(OCCC=C)C(F)(F)C(F)(F)C1(F)F LEWPTLXFUJDZPB-UHFFFAOYSA-N 0.000 description 1
- 244000002639 Delonix regia Species 0.000 description 1
- 206010012735 Diarrhoea Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 206010029412 Nightmare Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001921 mouthing effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021647 smectite Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
12780071278007
【發明所屬之技術領域】 乂本發明係關於薄膜電晶體及其製造方法，更詳言之， :f t f經對非晶矽施行雷射回火而所獲得的多晶石夕，使 作^半導體層的薄膜電晶體（例如，構成液晶顯示裝 像素的薄膜電晶體）之製造方法的改良。 【先前技術】 通稱「主動矩陣式」的液晶顯示裝置，係由在玻適 =上形成矩陣狀多數薄膜電晶體而構成。一般 ς[Technical Field According to the Invention] The present invention relates to a thin film transistor and a method of manufacturing the same, and more specifically, a polycrystalline stone obtained by performing a laser tempering on an amorphous germanium, and making a semiconductor Improvements in the manufacturing method of a thin film transistor of a layer (for example, a thin film transistor constituting a liquid crystal display mounted pixel). [Prior Art] A liquid crystal display device generally referred to as "active matrix type" is formed by forming a matrix-shaped plurality of thin film transistors on a glass substrate. General
::依較多晶石夕膜更低溫進行製造，習知的液晶 貝泛地採用將非晶矽膜使用為半導體層的薄 ^ (所謂「/晶石夕TFT(Thin FUm Transist〇r)」）電曰曰體 但是，隨對非晶矽膜照射雷射，使局部產生熔融結曰 的雷射回火技術之開發，即便低溫仍可製造多晶矽膜。 二=此種雷射回火所獲得多晶矽使用為半導體層的薄膜電 曰曰，通稱「低溫複晶矽TFT」。低溫複晶矽TFT乃因為可 將液晶顯示裝置更加小型化、高性能化，0而最近：：：:: It is manufactured at a lower temperature than the more spar film, and the conventional liquid crystal is generally used as a thin layer of a semiconductor layer (so-called "Thin FUm Transist〇r") Electron sputum However, with the development of laser tempering technology that irradiates a laser to an amorphous ruthenium film to locally produce a molten crucible, a polycrystalline ruthenium film can be produced even at a low temperature. Secondly, the polycrystalline silicon obtained by such laser tempering is used as a thin film electric circuit of a semiconductor layer, and is generally called "low temperature polycrystalline germanium TFT". Low-temperature polysilicon TFT is used because it can make the liquid crystal display device more compact and high-performance. 0 and recently:::
、、第5圖所示係習知低溫複晶矽TFT構造的剖視圖。此 溫，晶石夕TFT係所謂「頂閘極式薄膜電晶體」。在玻璃基 板等、、’g、味基板1上，形成底塗膜之由氮化矽膜2與I化 膜j，構成的雙層絕緣膜，並在此底塗膜上形成多結晶石夕 (稷晶矽）膜4。多結晶矽膜4係在形成非晶 silicon)膜之後，再藉由照射雷射形成多晶化而所獲得Fig. 5 is a cross-sectional view showing a conventional low-temperature polysilicon TFT structure. At this temperature, the Jingshixi TFT is a so-called "top gate thin film transistor". a double-layer insulating film composed of a tantalum nitride film 2 and an ionized film j on a glass substrate or the like, a 'g, a taste substrate 1, and a polycrystalline stone is formed on the undercoat film. (Crystalline) film 4. The polycrystalline ruthenium film 4 is obtained by forming an amorphous silicon film and then forming polycrystalline by irradiation of a laser.
1278007 五、發明說明（2) 導體層」在此多結晶矽膜4上形成閘絕緣膜之氧化矽膜$。 在氧化矽膜5上，利用濺鍍處理形成鉻膜等導、 屬膜，對此導電性金屬膜利用照相製版處理施^圖電性金 猎此而形成閘極6。此閘極6亦是在對半導體層（ 曰 植入麟等雜質之際，被當作遮罩使用。換句曰曰梦 者虱化矽膜5對多結晶矽膜4施行雜質的離子摻 ^ ^ 爾後的加熱處理(回火)將所植入的雜質活：:[雜而 體層上形成源極·汲極區域。 隹牛導 在閘極6上利用電衆CVD(Chemical Deposition)沉積氧化矽膜，而形成層間絕緣膜7。然 ，用照相製版施行圖案化處理而在層間絕緣膜7中形成 觸洞，並利用濺鍍處理在層間絕緣膜7上形成鉻膜等 ，金屬膜，。藉由對此導電性金屬膜施行圖案化處理，而形 石夕極與及極8。在該等源極與没極8上形成保護膜的氮化 第6圖所示係習知低溫複晶石夕m之製造程序重要 丰-例圖’乃圖示直到形成閘絕緣膜的氧化石夕膜5為止的 ::。首先，在絕緣性基則上依序形成氮化矽膜2、氧化 非晶♦膜1G(㈣⑷圖所示步驟）。該等氮化石夕 = 2—、巩化矽膜3、及非晶矽膜1〇的形成，係在真空處理室 :貫施的，例如採用平行平板式肫電漿cyD裝置。其次， 非晶#膜10中的氫進行脫氣而施行加熱處理，然後，， t ΐ ζ (第6(b)圖戶斤示步驟）。雷射照射乃採用波長 隸屬各外域的準分子雷射。藉由對非晶石夕膜10施行雷射 7042-6438-PF(N3);Ahddub.ptd 第6頁1278007 V. DESCRIPTION OF THE INVENTION (2) Conductor Layer A ruthenium oxide film $ of a gate insulating film is formed on the polycrystalline ruthenium film 4. On the ruthenium oxide film 5, a conductive film such as a chromium film is formed by a sputtering process, and the conductive metal film is patterned by photolithography to form a gate electrode 6. This gate 6 is also used as a mask on the semiconductor layer (the 曰 implanted with impurities such as lin. In other words, the nightmare 虱 矽 矽 5 对 对 对 对 施 施 施 施 施 施 施 施^ After the heat treatment (tempering), the implanted impurities are:: [The source and the drain region are formed on the impurity layer. The yak guide deposits yttrium oxide on the gate 6 by chemical CVD (Chemical Deposition). The film is formed to form the interlayer insulating film 7. However, a patterning process is performed by photolithography to form a contact hole in the interlayer insulating film 7, and a chromium film or the like is formed on the interlayer insulating film 7 by a sputtering process. The conductive metal film is subjected to a patterning process, and the smectite and the apex 8 are formed. The nitriding of the protective film formed on the source and the dynode 8 is shown in FIG. The manufacturing process of the eve m is important - the example diagram is shown until the oxidized stone film 5 of the gate insulating film is formed: First, the tantalum nitride film 2 is formed on the insulating substrate in sequence, and the oxidized amorphous layer is formed. ♦ Membrane 1G (steps shown in (4) (4).) These nitrides = 2, 3, 3, and 1 In the vacuum processing chamber: for example, a parallel plate type 肫 plasma cyD device is used. Secondly, the hydrogen in the amorphous film 10 is degassed and subjected to heat treatment, and then, t ΐ ζ (6th) (b) Figure shows the steps). Laser irradiation uses excimer lasers with wavelengths belonging to each outer domain. Laser A 702-6438-PF (N3) is performed on the amorphous 10 film; Ahddub.ptd 6 pages
!278〇〇7 、發明說明（3) jSS ή± :行二:吏非f矽膜10熔融，然後再利用自然冷卻而使矽 ==匕。藉由此種雷射回火，便形成多結晶矽膜4 ^ 理的人，若對多結晶矽膜4利用照相製版施行圖案化處 6(0 j便將形成構成半導體層的島狀多結晶矽膜4(第 用』H示步、驟〉。在此島狀多結晶石夕膜4形成之後，便利 ^ 形成氧化石夕膜5(第6(d)圖所示步驟）。 I # I利用此種製造程序製造低溫複晶矽TFT的情況時， 化j ΐ非晶矽膜1〇之後，且直到於多結晶矽膜4上形成氧 ίο 為止之間，均呈現在絕緣性基板1上裸露出矽膜4, 产主、態。因此，若使絕緣性基板丨暴露於如大氣等含氧 中的話，矽膜4, 10亦將接觸於大氣，導致表面將形成 =然氧化膜。例如，因為在形成氧化矽膜5之前所施行的 田射回火、或照相製版等各個步驟均在大氣中施行，因而 在石夕膜表面上將形成自然氧化膜。 $ 一般而言，非晶矽膜1 〇與多結晶矽膜4等矽膜均屬於 化學活性’在大氣中矽原子將容易與氧原子鍵結，而在、石夕 膜表面上形成氧化膜（自然氧化膜）。此種自然氧化膜將使 石夕膜表面的結晶構造出現缺陷，導致矽膜表面變粗糙。因 為薄膜電晶體的動作特性乃大幅依存於多結晶石夕膜4與氧 化石夕膜5間的界面狀態，因而隨在石夕膜上形成自然氧化 膜’便將發生薄膜電晶體特性惡化的問題。 特別係在非晶石夕膜1 0表面上所形成的自然氧化膜，將 隨雷射回火而活性化，導致結晶構造的缺陷將更加擴大。 除此之外，因為非晶矽膜1 〇在相較於多結晶矽膜4之下，!278〇〇7, invention description (3) jSS ή±: line 2: 吏 non-f矽 film 10 is melted, and then use natural cooling to make 矽 ==匕. By such radiant tempering, a person who forms a polycrystalline ruthenium film is formed. If the polycrystalline ruthenium film 4 is patterned by photolithography, 6 (0 j will form an island-like polycrystal constituting the semiconductor layer). The ruthenium film 4 (the first step H shows the step and the step). After the formation of the island-shaped polycrystalline lithography film 4, it is convenient to form the oxidized stone film 5 (the step shown in Fig. 6(d)). I # I When the low temperature polysilicon TFT is fabricated by such a manufacturing process, it is present on the insulating substrate 1 after the formation of the amorphous germanium film 1 直到 and until the formation of oxygen ίο on the polycrystalline germanium film 4 The ruthenium film 4 is exposed to the main state. Therefore, if the insulating substrate 丨 is exposed to oxygen such as the atmosphere, the ruthenium film 4, 10 will also come into contact with the atmosphere, causing the surface to form an oxide film. Since each step of tempering or photolithography performed before the formation of the ruthenium oxide film 5 is carried out in the atmosphere, a natural oxide film is formed on the surface of the ruthenium film. Membrane 1 〇 and polycrystalline ruthenium film 4 are all chemically active. 'In the atmosphere, helium atoms will be easy to react with oxygen. Sub-bonding, and forming an oxide film (natural oxide film) on the surface of the stone film. Such a natural oxide film will cause defects in the crystal structure of the surface of the stone film, resulting in roughening of the surface of the film. The action characteristics are largely dependent on the interface state between the polycrystalline lithotripsy film 4 and the oxidized stone film 5, so that the formation of a natural oxide film on the stone film will cause a problem of deterioration of the film crystal characteristics. The natural oxide film formed on the surface of the crystallized film 10 will be activated by laser tempering, resulting in a further enlargement of the crystal structure. In addition, since the amorphous ruthenium film 1 is compared with Under the polycrystalline enamel film 4,
7042-6438-PF(N3) ;Ahddub.ptd7042-6438-PF(N3) ;Ahddub.ptd
1278007 五、發明說明（4) 較具活性，因 表面上形成自 膜10上形成自 動作特性造成 再者，利 步驟，因為基 將產生多結晶 面的污染，可 殘留、及多結 但是不管何種 界面狀態造成 化0 而，雷射回火前較雷射回火後更容易在 :乳化膜。所以，t雷射回火矽 頗大影響的問題"產生對薄膜電晶體之 用照相製版對多結晶矽膜4圖案化為島狀的 板將暴露於光阻劑或光阻剥離液中 矽膜4表面遭受污染的問題。多結晶矽膜4 : :斷乃因譬如形成氧化膜之形成、光阻膜J 晶石夕膜4的部分表面被切削等情況而引起、， 情況^均將對多結晶秒膜4與氧化硬膜5間的 不良影響，將導致薄膜電晶體動作特性的惡 自習知起便有在為防止此種因自然氧化膜所造 惡化之目的下’而提案低溫複晶梦TFT之製造方法（例如灸 照專利文獻1)。專利文獻丨中所記載的製造方法，係藉/ 在非晶矽膜10表面上預先形成熱氧化膜，而防止自然曰 膜的形成。換句話說，藉由在大氣或氧氣等環境中&美 施行加熱處理，便在雷射照射前的非晶矽膜1〇表面ς 熱氧化膜。 取 但是，當絕緣性基板1採用玻璃基板的情況時，若 慮熱應變等影響的話，便無法將基板形成600 t以上的古 ^態’ f致必須在低於600 1以下的溫度中形成熱氧二 在此種溫度條件下玻璃基板上形成熱氧化膜的 情況％，成膜速度極為緩慢，在為形成所需膜厚之埶氧化1278007 V. INSTRUCTIONS (4) More active, due to the formation of self-made properties on the surface of the film 10, resulting in a further step, because the base will produce polycrystalline surface contamination, can remain, and more knots but no matter what The state of the interface is caused by zero, and it is easier to illuminate the laser before the tempering. Therefore, the problem of the large impact of the t-ray and the tempering of the fire" resulting in the photolithography of the thin-film transistor, the patterning of the polycrystalline enamel film 4 into an island-like plate will be exposed to the photoresist or the photoresist stripping solution. The surface of the membrane 4 is subject to contamination problems. The polycrystalline ruthenium film 4: : is broken due to the formation of an oxide film, and the surface of the photoresist film J is a part of the surface of the film 4, and the case will be applied to the polycrystalline seconds film 4 and the oxidized hard The adverse effect of the film 5, which will lead to the evil behavior of the film transistor, is known to prevent the deterioration of the natural oxide film, and the manufacturing method of the low-temperature complex crystal TFT (such as moxibustion) is proposed. According to Patent Document 1). In the production method described in the patent document, a thermal oxide film is formed in advance on the surface of the amorphous tantalum film 10 to prevent the formation of a natural tantalum film. In other words, by heat-treating in the atmosphere or in an environment such as oxygen, the surface of the amorphous ruthenium film 1 before the laser irradiation is thermally oxidized. However, when the insulating substrate 1 is made of a glass substrate, if the thermal strain or the like is affected, the substrate cannot be formed into an ancient state of 600 t or more, and heat must be formed at a temperature lower than 600 1 or less. The case where the oxygen oxide film forms a thermal oxide film on the glass substrate under such temperature conditions, the film formation speed is extremely slow, and is oxidized to form a desired film thickness.
1278007 五、發明說明（5) 膜方面，便將發生需要較長處理時間的自 迴避在熱氧化膜形成之前，便在非a °〗喊。而且，無法 氧化膜的情況，可判斷薄膜電曰：2表面上形成自然 r真1 A * 1 動作特性將降低。 【專利文獻1】曰本特開平u_35444i號公報 【發明内容】 如上述，習知的薄膜電晶體在截至形成閘絕為 將开化】為在非晶梦膜10、多結晶石夕膜4表面上 的fi題：而將產生薄膜電晶體動作性能惡化1278007 V. INSTRUCTIONS (5) In terms of membranes, self-avoidance, which requires a long processing time, is called before the formation of the thermal oxide film. Further, in the case where the film cannot be oxidized, it can be judged that the film electrode is formed: 2, the formation of natural r true 1 A * 1 on the surface, the operational characteristics will be lowered. [Patent Document 1] Japanese Patent Application Laid-Open Publication No. Hei. No. Hei. No. 35-35444. SUMMARY OF THE INVENTION As described above, the conventional thin film transistor is formed on the surface of the amorphous dream film 10 and the polycrystalline stone film 4 at the time of forming the gate. Fi problem: will produce film transistor performance deterioration
Kt: ϋ,ί!製版步驟中，將產生多晶石夕膜表面 又巧木、薄膜電晶體的動作性能惡化等問題。 本發明乃有鑑於上述諸項問題而所構思，豆目 ，供動作特性優越的薄膜電晶體、及其製造方法俜 於提供缺陷位準較少，且多晶石夕膜靠閘極側的界面 L 好之薄膜電晶體及其製造方法。此外，目的在於 供可廉價製造的動作特性優越之薄膜電晶體。 、> 再者，本發明之目的在於提供一種在多晶矽膜靠閘極y 貝1的界面上’未具有自然氧化膜的薄膜電晶體之製造方 法。此外，本發明之目的提供一種在照相製版處理中，可 抑制多晶石夕膜表面遭受污染的薄膜電晶體之製造方法。 y 、本發明的薄膜電晶體之製造方法，係包括：在基板上 形成非晶質之石夕膜的矽膜形成步驟；在上述矽膜上形成界 面保護膜的界面保護膜形成步驟；對已形成上述界面保護 膜的基板照射雷射，而對上述矽膜施行回火處理的雷射回Kt: ϋ, ί! In the plate making step, problems such as the deterioration of the operation performance of the polycrystalline stone film and the thin film transistor will occur. The present invention has been conceived in view of the above problems, and a film substrate, a film transistor excellent in operational characteristics, and a manufacturing method thereof are provided with an interface having a small defect level and a polycrystalline stone film on the gate side. L good thin film transistor and its manufacturing method. Further, the object is to provide a thin film transistor which is excellent in operational characteristics which can be inexpensively manufactured. Further, an object of the present invention is to provide a method for producing a thin film transistor having no natural oxide film at the interface of the polysilicon film by the gate y1. Further, it is an object of the present invention to provide a method for producing a thin film transistor which can suppress contamination of a surface of a polycrystalline stone film in a photolithography process. y, the method for producing a thin film transistor of the present invention, comprising: a ruthenium film forming step of forming an amorphous shoal film on a substrate; and an interface protective film forming step of forming an interface protective film on the ruthenium film; The substrate forming the interface protective film is irradiated with a laser, and the ruthenium is subjected to tempering treatment.
第9頁 7〇42-6438-PF(N3);Ahddub.ptd 五、發明說明（6) =步驟；以及在經雷射回火過的基板上，形成閘絕给 形膜與界面保護膜係:: 依照此種構造的話，因為從非晶石夕膜之 =之形成為止，均在保持真空狀態下實施，所以= ^非曰曰矽膜便不致被暴露於大氣等含氧環境氣體中的前= 下，於非晶矽膜上形成界面保護膜。所以，便可防止& 膜靠閑極侧界面上形成自然氧化膜。特： 夕、猎由在缉射回火前便形成界面保護膜，因而在雷射j 二際=需；保持著真空狀態，可廉價地製造薄膜電晶 便接著二匕在保持著真空狀態下’於形成非晶矽臈後 麻ΐ:ϊ成界護膜’便可使產能不致明顯的降低，可 衣造薄膜電晶體。例如可在同一真空處理室内形 非日日矽膜與界面保護膜。 成 基板3成ίϊ!的薄膜電晶體之製造方法’係包括：在 , /成非日日貝之矽膜的矽膜形成步驟；在上述矽膜上 Μ界=:=界面保護膜形成步驛；對上述基板照射 後的石夕膜施行圖案化處理的照相製版步驟丄 +驟:直：火？ ？基板上’ $成閘絕緣膜的閘絕緣膜形成 i序， 夕膜與界面保護膜係在保持真空狀態下Page 9 7〇42-6438-PF(N3); Ahddub.ptd V. Inventive Note (6) = Step; and on the laser-tempered substrate, the gate-absolute film and the interface protective film system are formed. :: According to this configuration, since it is carried out while maintaining the vacuum from the formation of the amorphous stone film, the non-tank film is not exposed to oxygen-containing ambient gases such as the atmosphere. Before the under =, an interface protective film is formed on the amorphous germanium film. Therefore, it is possible to prevent the film from forming a natural oxide film on the idle side interface. Special: On the eve, hunting forms an interface protective film before the rifle is fired. Therefore, in the laser, it is required to maintain the vacuum state, and the thin film crystal can be manufactured inexpensively, and then the vacuum is maintained. 'After the formation of amorphous bismuth: ϊ 界 界 护 ' 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可 便可For example, a non-daily enamel film and an interface protective film can be formed in the same vacuum processing chamber. The manufacturing method of the thin film transistor of the substrate is as follows: a film forming step of the film in the film, and a film forming step on the film: == interface film forming step The photoengraving step of patterning the stone film after the irradiation of the substrate is as follows: straight: fire? ? On the substrate, the gate insulating film of the gate insulating film forms the i-order, and the etching film and the interface protective film are kept under vacuum.
依照此種構造的每，阳& / L 保護膜之形成為止，均在膜岔形成起至界面 θ在保持真空狀態下實施，所以便可 1278007 五、發明說明（7) 在矽膜便不致被暴 於矽膜上形成界面 在矽膜靠閘極側界 射回火前便形成界 保持著真空狀態， 好在雷射回火前便 後才形成界面保護 再者，本發明 造之外，上述雷射 案化前之基板，施 雷射回火前便形成 要保持於真空狀態 再者，本發明 造之外，上述界面 絕緣性界面保護膜 面保護膜的話，便 有效率的形成界面 低溫下形成熱氧化 速，可輕易地形成 成較低溫熱氧化膜 再者，本發明 造之外，尚包含有 步驟；而上述矽膜 質之石夕膜的步驟所 露於大氣 保護膜。 面上形成 面保護膜 可廉價地 形成界面 膜，仍可 的薄膜電 回火步驟 行雷射照 界面保護 ，因而可 的薄膜電 保護膜形 的步驟所 不需要對 保護膜。 膜的情況 由所需膜 更密緻的 的薄膜電 在上述基 形成步驟 構成；上 等含氧環境氣 所以，便可防 自然氧化膜。 ，因而在圖案 製造薄膜電晶 保護膜，但是 獲得一定的效 晶體之製造方 係由對已形成 射的步驟所構 膜，於雷射回 廉價地製造薄 晶體之製造方 成步驟係由利 構成。若利用 絕緣性基板施 特別係在相較 下’本發明的 厚的界面保護 膜。 晶體之製造方 板上形成底塗 係由在上述底 述底塗膜、矽 體中的前提下’ 止（或大幅抑制） 特別係藉由在雷 化之際便無需要 體。此外，雖最 更在雷射回火 果。 法，乃除上述構 界面保護膜的圖 成。因為藉由在 火之際，並無必 膜電晶體。 法，乃除上述構 用電漿CVD形成 電漿CVD形成界 行加熱處理，可 於對玻璃基板在 成膜速度較快 膜。此外，可形 法，乃除上述構 膜的底塗膜形成 塗膜上形成非晶 膜及界面保護膜According to this configuration, the formation of the cation & / L protective film is carried out until the interface θ is maintained in a vacuum state, so that it can be 1278007 V. The invention description (7) is not caused in the enamel film. The interface formed by the violent film on the enamel film maintains a vacuum state before the sputum film is ignited back to the fire by the gate boundary. It is good to form the interface protection before and after the tempering of the laser. The substrate before the laserization is formed to be kept in a vacuum state before the laser is tempered. Further, in addition to the invention, the interface insulating protective film surface protective film can effectively form an interface low temperature. The thermal oxidation rate is formed below, and can be easily formed into a lower temperature thermal oxide film. Further, in addition to the present invention, a step is included; and the step of the above-mentioned enamel film is exposed to the atmospheric protective film. The surface protective film is formed on the surface to form an interface film at a low cost, and the remaining film electric tempering step is protected by a laser irradiation interface, so that the step of the thin film electrical protective film shape does not require a protective film. In the case of a film, the film which is denser than the film to be formed is formed in the above-mentioned base forming step; the upper oxygen-containing atmosphere gas can prevent the natural oxide film. Therefore, a thin film electro-optic protective film is formed in a pattern, but a certain effect is obtained in that the manufacturing process is performed by a step of forming a film, and a manufacturing step of manufacturing a thin crystal at a low cost. When the insulating substrate is used, the thick interface protective film of the present invention is particularly used. The formation of the undercoat on the substrate of the crystal is carried out by the undercoat film and the ruthenium in the above-mentioned underlying film (or substantially suppressed), in particular, by the need for the body at the time of the refinement. In addition, although the laser is the most flamboyant. The method is a diagram of the above-mentioned interface protective film. Because by the fire, there is no film transistor. In addition to the above-mentioned configuration of plasma CVD, plasma CVD is formed to form a boundary heat treatment, which is capable of forming a film on a glass substrate at a faster rate. Further, a formable method is to form an amorphous film and an interface protective film on the undercoat film forming film of the above-mentioned film.
1278007 五、發明說明（8) 係在保持真空狀能 為從底塗膜之形^叔ΐ序形成的°依照此種構造的話’因 真空狀態下實施，2界面保護膜之形成為止’均在保持 成自然氧化膜。 可防止在底塗膜與石夕膜的界面上形 、止之：者：本發明的薄膜電晶體之製造方法，乃除上述構 :形成的界nm:成步驟係由在上述非晶石夕膜上 緣膜(最好為氧化：膜;2與閑絕緣膜相同組成所構成絕 ^ , 夕膜）的步驟所構成。依照此種構造的 話，便可提升薄膜電晶體的動作特十生。 . 、止夕^者本^明的薄膜電晶體之製造方法，乃除上述構 ，上4述，射回火步驟係對已形成矽膜的基板照射 &照射區域平行於基板面進行掃描的步驟所 膜施行回火處理。’二具有可選擇性的對非曰曰“夕 護膜後的非晶;便可對經形成界面保 收之情況下，施行回ΐϋ致明顯的被界面保護膜所吸 、再者本毛明的薄膜電晶體之製造方法，乃除上诚播 造之外，尚包含有在形成上述閘絕緣去 ==的界面保護膜去除步驟。依此構；除以 膜之同時’便去除界面保護膜表面上二 成的自然氧化膜。戶斤以，傾尤a击 成的自然氧化膜，$ # t s ^ =護膜表面上所形 膜之間，可提升動晶石夕膜與閘絕緣 膜之前才施行界面=的；：，2在正要形成閉絕緣 囬保遷膜的去除，將可縮短多晶矽膜表面1278007 V. INSTRUCTION OF THE INVENTION (8) In the case of maintaining the vacuum, it can be formed from the shape of the undercoat film. According to this configuration, 'because of the vacuum state, the formation of the 2 interface protective film' Maintain a natural oxide film. The method of manufacturing the thin film transistor of the present invention can be prevented from being formed by the method of manufacturing the thin film transistor of the present invention. The upper edge film (preferably oxidized: film; 2 is composed of the same composition as the dummy insulating film). According to this configuration, the action of the thin film transistor can be improved. The manufacturing method of the thin film transistor of the present invention is the same as the above-mentioned configuration. In the above description, the shot tempering step irradiates the substrate on which the ruthenium film has been formed and the irradiation region is scanned parallel to the substrate surface. The film of the step is subjected to tempering treatment. 'The second one has a selective non-曰曰 曰曰 非晶 非晶 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕 夕The manufacturing method of the thin film transistor includes an interface protective film removing step of forming the above-mentioned gate insulating === in addition to the on-demand fabrication. According to this configuration, the interface protective film is removed at the same time as the film is removed. 20% of the natural oxide film on the surface. The natural oxide film that is poured into the surface of the household, $ # ts ^ = between the film on the surface of the protective film, can lift the moving crystal film and the insulating film before the gate Only the implementation of the interface =::, 2 in the formation of the closed insulation back to the removal of the film, will shorten the surface of the polycrystalline film
7042-6438-PF(N3) ;Ahddub.ptd 第12頁 1278007 發明說明（9) 五 境ί體中的時間。但是，多晶石夕膜在相較 3夕膜之下，屬於較難形成自然氧化膜， 勺％期便施行去除，仍可獲得一定的效果。、 造之：者上= :膜電晶體之製造方法1除上述構 上述保4膜去除步驟係由在圖案 除界面保護膜的步驟所構成。藉由在宰f ;二：= 保護膜，便可防止於照相製版之Ξ 的動：:性光卫剝離液中的情況發生’可提升薄膜心： 再者，本發明的薄膜電晶體係包括：對基板上的 二=照，射，而所獲得…膜；在板與= 之界面未形成自然氧化膜的情況下，所形成的界面保 j 2，以及在上述界面保護膜上所形成的閘絕緣膜。 ，膜與界面保護膜間之界面不致形成自然氧 二 :特=膜上形成界面保護膜，便可提升薄膜電晶體二 (發明之效果） 依照本發明的薄膜電晶體之製造方法，因為在矽 面不致暴露於大氣等含氧環境氣體中之情況下，於矽膜^ ，成界面保護膜，因而便可防止（或大幅抑制）在矽膜靠^ 亟侧界面上形成自然氧化膜。·所以，便可製造動 ς 越的薄膜電晶體。 Γ生優 依照本發明的薄膜電晶體之製造方法，因為在對石夕臈 7042-6438-PF(N3);Ahddub.ptd 第13頁 1278007 五、發明說明（10) 施行圖案化處理之前便形成界面保護膜，因而在照相製版 之際’ ♦膜表面便不致被暴露於光阻劑或光阻剝離劑中， 因而可抑制矽膜靠閘極側界面遭受污染。 【實施方式】 實施形態1 第1(a)〜（d)圖所示係相關本發明實施形態1的低溫複 晶矽TFT之製造方法，重要部分之一例圖，截至形成閘絕 緣膜5為止的各步驟。 絕緣性基板1係玻璃基板等具絕緣性的透明基板，在 此絕緣性基板1上依序形成氮化矽膜2、氧化矽膜3、非晶 矽膜10、及氧化矽膜u (第1(a)圖所示步驟）。非晶矽膜 述的雷射照射而多結晶化，且經離子摻雜而形成 ΐίίϊΐ:的非晶狀石夕膜。氮化補與氧化矽膜3均屬 3 特性安定化的絕緣性底塗膜。氧化石夕膜11係 inL:止出現裸露出非晶石夕膜10的狀態，而保 瘦罪閘極側之界面的絕緣性界面保護膜。 該等氮化矽膜2、氧化矽膜3、非晶矽膜1〇及 ==用CVD裝置形成。而且，所有該等層均的 J空=内連續地形成。即基板並未從真空處理J = 持真空狀態下，施行從形成氮化石夕膜2起至 大氣的。所以，#晶矽膜1〇便可在未接觸 以表面上’形成將造成結晶構造缺陷原因的膜7042-6438-PF(N3) ;Ahddub.ptd Page 12 1278007 Description of invention (9) Time in the context of the body. However, the polycrystalline stone film is more difficult to form a natural oxide film than the celestial film, and the spoon is removed in the % period, and a certain effect can still be obtained. In addition to the above configuration, the above-mentioned film 4 film removal step is constituted by the step of removing the interface protective film in the pattern. By preventing the movement of the film during the photo-setting process: the occurrence of the film in the stripping solution can improve the film core: Furthermore, the film electro-crystalline system of the present invention includes : for the film on the substrate, the film is obtained; in the case where the natural oxide film is not formed at the interface between the plate and the film, the formed interface is protected, and the interface formed on the interface film is formed. Brake insulation film. The interface between the film and the interface protective film does not form natural oxygen: a special protective film is formed on the film, and the thin film transistor can be lifted (the effect of the invention). The manufacturing method of the thin film transistor according to the present invention is because When the surface is not exposed to an oxygen-containing atmosphere such as the atmosphere, the interface is protected at the interface of the ruthenium film, thereby preventing (or substantially suppressing) the formation of a natural oxide film on the interface of the ruthenium film. • Therefore, it is possible to manufacture a thin film transistor that is more dynamic. The method for producing a thin film transistor according to the present invention is formed before the patterning treatment is performed on Shi Xijing 7042-6438-PF (N3); Ahddub.ptd, page 13 12780007 V, invention description (10) The interface protects the film, so that the surface of the film is not exposed to the photoresist or the photoresist stripper at the time of photolithography, thereby suppressing contamination of the film by the gate side interface. [Embodiment] Embodiment 1 (a) to (d) show a method for manufacturing a low-temperature polysilicon TFT according to Embodiment 1 of the present invention, and an example of an important portion thereof is as shown in the gate insulating film 5 . Each step. The insulating substrate 1 is an insulating transparent substrate such as a glass substrate, and a tantalum nitride film 2, a hafnium oxide film 3, an amorphous germanium film 10, and a hafnium oxide film u are sequentially formed on the insulating substrate 1. (a) Steps shown in the figure). The amorphous ruthenium film is irradiated with laser light to be multi-crystallized, and is ion-doped to form an amorphous diarrhea film. Both the nitriding and the yttrium oxide film 3 are three insulating and stable undercoat films. Oxidized oxide film 11 series inL: The state in which the amorphous austenite film 10 is exposed is formed, and the insulating interface protective film at the interface of the gate side of the gate is preserved. The tantalum nitride film 2, the hafnium oxide film 3, the amorphous tantalum film 1 and the == are formed by a CVD apparatus. Moreover, all of these layers are formed continuously in J void = inner. That is, the substrate is not subjected to vacuum treatment J = vacuum, and is applied from the formation of the nitride film 2 to the atmosphere. Therefore, the #晶晶膜1〇 can form a film which will cause a crystal structure defect without being contacted on the surface.
五、發明說明（11) 氮化矽膜2、氧化矽膜3、非晶矽膜1()及氧化矽膜丨丨之 形成’乃採用平行平板式RF電藥CVD裝置。若利用、 f成氧切㈣的話，便可在未對絕緣性基板i 加敎 f理的情況下’形成界面保護膜。所以，相較於利用加孰 、ΪΪ而ίΐ晶矽膜1〇表面上，形成氧化膜(熱氧化膜）的情 况下，本發明將可在不致受熱應變影響之下， 護膜。 1 ❿成界面保 片再者，利用電漿CVD所形成的氧化矽膜丨丨，相較於埶 ::3 ί:禮：可Ϊ ί的確保充分的膜厚。絕緣性基 糸由玻璃所構成，當考慮熱應變而欲在低於6〇〇它 ，^下形成熱氧化膜之情況時，成膜速度極為 中雖形成5加以下的熱氧化膜，但是不容易將臈^ 更厚。相對於此，當採用電漿CVD的情況時，可麫易 ?膜厚達數十nm的氧化矽膜。所以’若；形‘ 並將膜厚形成一的話，便可有效:保 膜的= Ϊ保護效果’利用電漿CVD所形成氧化石夕 越好，若形成較厚於自然氧化膜所認定上 ;=nm。：外’在對氧化梦膜"與非晶石夕膜1〇施行圖 :”：扩2安因為同時對二膜施行蝕刻處理，因而在·為 ;良好施盯圖案加工方面，最好將上述膜厚設定在= 再者，相對於此種在低溫下所形成熱氧化膜的粗糙情 五、發明說明（12) 膜兄下氧==:/成的氧化烟將形成更密緻的 甘“ 又租梭，可有效的保護界面。 其二人，對已形成氧化矽膜丨J的其 將非晶矽膜1〇多結晶化，便，雷射照射，而 千牛酹、# 士而， 便獲传夕結晶石夕膜4(第1(b)圖所 Γ:νΛ上 時欲防止形成自然氧化膜的情況 mi在將絕緣性基板1維持於真空狀態下施行雷 兄下，雷射照射裝置將便高單價，可判斷將 成本的提高。相對於此，若在雷射照射前，便在 等;氧化㈣11的話’即便雷射照射在大氣 ί:2 中貫㈤，仍不致形成自然氧化膜。而且，因 為辑射照射時的非晶矽臈10將被氧化矽膜η所覆蓋，因而 3於習知的自然冷卻之情況下，將可抑制熔融矽的冷卻 、、又故而將改善矽的結晶成長，可獲得粒徑更大的多結 晶石夕膜4。 曰再者，本實施形態乃因為截至施行雷射照射之間，非 晶矽膜10均未被暴露於大氣等含氧的環境氣體中，因此表 面上完全未形成自然氧化膜。所以，因雷射回火而被活性 化的缺陷極少，可獲得優質的多結晶矽膜4。 雷射照¥乃採用波長屬於紅外區域的YAG(銦· |呂· 鎵）Μ射。例如，採用基本波波長為1 〇 64nm的雷射二次言皆 =(波長532nm)成分。此yAG雷射係屬於固體雷射的一種， 穿透性較高，且具有適於非晶矽膜1〇雷射回火（熔融結晶 化）的波長。所以，當雷射照射之際，即便在非晶矽膜1〇 上形成氧化石夕膜11，能量幾乎不致被氧化矽膜11所吸收，V. DESCRIPTION OF THE INVENTION (11) The tantalum nitride film 2, the tantalum oxide film 3, the amorphous germanium film 1 () and the tantalum oxide film are formed by a parallel plate type RF electric CVD device. When f is oxygen-cut (4), the interface protective film can be formed without adding the insulating substrate i. Therefore, in the case where an oxide film (thermal oxide film) is formed on the surface of the wafer 1 by twisting and rubbing, the present invention can protect the film without being affected by thermal strain. 1 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 电The insulating base is made of glass. When a thermal oxide film is to be formed at a temperature lower than 6 Å in consideration of thermal strain, a thermal oxide film of 5 or less is formed in the film forming speed, but it is not It is easy to make 臈^ thicker. On the other hand, when plasma CVD is used, it is easy to form a yttrium oxide film having a film thickness of several tens of nm. Therefore, if 'form; shape' and form a film thickness, it can be effective: the film protection = Ϊ protection effect 'the better the formation of oxidized stone by plasma CVD, if formed thicker than the natural oxide film; =nm. :External 'in the oxidation of the dream film" and the amorphous stone ceremonial film 1 〇 implementation: ": 2 amps because of the simultaneous etching of the two films, so in the; good mark-up pattern processing, it is best The above film thickness is set at = again, relative to the rough oxide of the thermal oxide film formed at a low temperature, the invention (12) oxidized smoke of the film under the oxygen ==: / will form a denser sweet “There is also a shuttle, which can effectively protect the interface. The two of them have crystallized the amorphous ruthenium film 1 已 which has formed the yttrium oxide film ,J, and then, the laser is irradiated, and the yak 酹,#士,,,,,,,,,,, In the case of Fig. 1(b): In the case of νΛ, it is necessary to prevent the formation of a natural oxide film. When the insulating substrate 1 is maintained in a vacuum state, the laser irradiation device will have a high unit price, and the cost will be judged. In contrast, if it is before the laser irradiation, it will wait; if it oxidizes (4) 11, even if the laser is irradiated in the atmosphere ί:2 (5), the natural oxide film will not form. The wafer 10 is covered by the ruthenium oxide film η. Therefore, in the case of the conventional natural cooling, the cooling of the molten ruthenium can be suppressed, and the crystal growth of the ruthenium can be improved, and a larger particle diameter can be obtained. Further, in the present embodiment, since the amorphous ruthenium film 10 is not exposed to an oxygen-containing atmosphere such as the atmosphere as far as the laser irradiation is performed, the surface is not formed at all. Oxide film. Therefore, the defect pole that is activated by laser tempering A high-quality polycrystalline ruthenium film can be obtained. The laser shot is made by YAG (indium·L · gallium) with a wavelength in the infrared region. For example, a laser with a fundamental wavelength of 1 〇 64 nm is used. All = (wavelength 532nm) component. This yAG laser system is a kind of solid laser, has high penetrability, and has a wavelength suitable for laser tempering (melting crystallization) of amorphous enamel film. Therefore, When the laser is irradiated, even if the oxidized oxide film 11 is formed on the amorphous ruthenium film, the energy is hardly absorbed by the ruthenium oxide film 11,
第16頁 7042-6438-PF(N3);Ahddub.ptd 五、發明說明（13) Z隔著氧化石夕膜丨丨僅對非晶矽膜1 〇有效的進行加熱溶融處 、—再者，YAG雷射乃因為雷射的照射方向可大致均勻的 進=力_口熱，因而可在照射方向的垂直方向上（即，基板面 的平行方向）成長結晶。所以，若朝基板面的平行方向掃 描YAG雷射之照射光12的話，非晶矽膜1〇便將依序熔融， 在，由爾後的自然冷卻依序的形成多結晶矽膜4，藉由使 此恥射區域在基板面整面上進行移動，便可將非晶矽膜】〇 整面進行多結晶化。 、 ”其次，若對已形成氧化矽膜11的多結晶矽膜4，利用 照相製版施行圖案化處理的話，便形成構成半導體層的島 狀多結晶矽膜4(第l(c)圖所示步驟）。在此島狀多結晶矽 膜 4,形成之後，便利用 BHF(Buffered Hydr〇gen Fiu〇ride) 等樂劑清洗基板表面。然後，利用電漿CVD形成閘絕緣膜 的閘絕緣膜5(第1(d)圖所示步驟）。 在圖案化處理之際，因為將氧化矽膜u形成於非晶矽 上，目而在照相製版之際’矽膜表面便不致被暴露於 光阻劑或光阻剝離液中’且在石夕膜表面上將不致形成自然 軋化膜。 再者’由第1(d)圖中明顯得知，雖在多結晶梦膜4上 方，存在有氧化石夕膜11與閘絕緣膜5，但是因為在I多結 晶石夕膜4的地方，僅存在閘絕緣膜5，因而所形成氧化梦的 膜厚，便可薄至僅有氧切膜厚的構造。此構造即便 在積層著層間絕緣膜7的第2圖中仍相同。 1278007 五、發明說明（14) 立I 5圖所二係本發明實施形態1的薄膜電晶體之-構造 例視圖。此薄膜電晶體係在利用第1圖所示製造程序形 成至閘絕緣膜5的各層之徭，A制m , 拉％序形 的相间制4成上利用如同習知薄膜電晶體 的才Π衣私序’形成閘極6、芦問绍絡 8、保護膜9。 層間絕緣膜7、源極與汲極 此薄膜電晶體係在多結晶梦膜4與閘極6之間存在氧化 m叉等雙，的氧化矽膜11與5將構成間絕緣膜的 功月&。此種閘絕緣膜之—Μ备M t , + f 的虱化矽膜11表面，在製造步驟 中將被广路於大氣t，而在表面上形成自然氧化膜，判斷 結晶構造將發生缺陷。此外，在照相製版步驟中，可判斷 表面將遭受污染。但是，一般而t，閘絕緣膜中的結晶構 造缺陷塊材（bulk)缺陷）乃為與矽膜間之界面的缺陷程 度，對薄膜電晶體的特性不致造成大影響。因此，藉由在 非晶矽膜10上形成氧化矽膜丨丨，將可提昇薄膜電晶^的特 性。 第3圖所示的步驟S101〜S107係本發明實施形態1的低 溫複晶矽TFT之製造方法中，重要部分之一例的流程圖。 首先’在絕緣性基板1上利用電漿CVD依序形成底塗膜的氮 化石夕膜2與氧化矽膜3 (步驟S1 01)。其次，在此底塗膜上利 用電漿CVD形成非晶矽膜1〇(步驟si 〇2)。然後，再於非晶 矽膜1 0上利用電漿CVD形成界面保護膜的氧化矽膜丨丨（步驟 S103) 〇 該荨各層的形成係在同一真空處理室内維持著真空狀 悲下依序施行’中途基板並未被暴露於大氣等之中。至少 7042-6438-PF(N3);Ahddub.ptd 第18頁 1278007Page 16 7042-6438-PF(N3); Ahddub.ptd V. INSTRUCTIONS (13) Z is only effective for heating and melting the amorphous ruthenium film 1 through the oxidized oligomembrane, and further, The YAG laser is capable of crystallizing in the vertical direction of the irradiation direction (that is, the parallel direction of the substrate surface) because the irradiation direction of the laser can be substantially uniform. Therefore, if the YAG laser irradiation light 12 is scanned in the parallel direction of the substrate surface, the amorphous germanium film 1 will be sequentially melted, and the polycrystalline germanium film 4 is sequentially formed by the subsequent natural cooling. By moving the mascara region over the entire surface of the substrate surface, the amorphous ruthenium film can be multi-crystallized. Then, when the polycrystalline ruthenium film 4 on which the ruthenium oxide film 11 has been formed is subjected to patterning by photolithography, the island-shaped polycrystalline ruthenium film 4 constituting the semiconductor layer is formed (Fig. 1(c) After the formation of the island-shaped polycrystalline ruthenium film 4, it is convenient to clean the surface of the substrate with an agent such as BHF (Buffered Hydr〇gen Fiu〇ride). Then, the gate insulating film 5 of the gate insulating film is formed by plasma CVD. (Step 1(d) shows). At the time of patterning, since the yttrium oxide film u is formed on the amorphous yttrium, the surface of the ruthenium film is not exposed to the photoresist at the time of photolithography. In the agent or photoresist stripping solution 'and the natural rolled film will not form on the surface of the stone film. Further, it is apparent from the first (d) diagram that although there is oxidation above the polycrystalline dream film 4 The stone film 11 and the gate insulating film 5, but since the gate insulating film 5 is present in the place of the I polycrystalline stone film 4, the film thickness of the oxidized dream can be as thin as that of the oxygen film only. This structure is the same even in the second drawing in which the interlayer insulating film 7 is laminated. 1278007 V. Invention (14) A diagram of a structure of a thin film transistor according to Embodiment 1 of the present invention, which is formed by the manufacturing process shown in Fig. 1 to the respective layers of the gate insulating film 5. , A system m, pull % phase of the phase-to-phase system 4% using the same as the conventional film transistor crystals private order 'formation gate 6, Lu Wen Shaoluo 8, protective film 9. Interlayer insulating film 7, source The electrode and the bungee of the thin film electro-crystal system have a double oxidized m-fork between the polycrystalline dream film 4 and the gate 6, and the yttrium oxide films 11 and 5 will constitute a dielectric film of the interlayer insulating film. The film-prepared surface of the tantalum film 11 of M t , + f will be widely dispersed in the atmosphere t in the manufacturing step, and a natural oxide film is formed on the surface to judge that the crystal structure will be defective. In the plate making step, it can be judged that the surface will be contaminated. However, in general, t, the crystal structure defective bulk defect in the gate insulating film is the degree of defect at the interface with the ruthenium film, and the characteristics of the thin film transistor Does not cause a large influence. Therefore, by forming a ruthenium oxide film on the amorphous germanium film 10 The characteristics of the thin film transistor can be improved. Steps S101 to S107 shown in Fig. 3 are flowcharts showing an important example of the method for manufacturing the low temperature polysilicon TFT according to the first embodiment of the present invention. On the substrate 1, the nitride film 2 and the yttrium oxide film 3 of the undercoat film are sequentially formed by plasma CVD (step S1 01). Second, an amorphous ruthenium film is formed on the undercoat film by plasma CVD. (Step si 〇 2) Then, the yttrium oxide film of the interface protective film is formed by plasma CVD on the amorphous ruthenium film 10 (step S103), and the formation of each layer of the ruthenium is maintained in the same vacuum processing chamber. Vacuum-sorrowful and sorrowful implementation of 'the middle substrate is not exposed to the atmosphere. At least 7042-6438-PF(N3); Ahddub.ptd Page 18 1278007
從非晶矽膜1 〇之形成起至界面保護膜之形成為止，基板 未被暴露於大氣等之中，在非晶矽膜丨0靠閘極側表二上並 無形成自然氧化膜。非晶石夕膜1 0的脫氫處理係在形 = 保護膜11之後，才對基板施行加熱處理。 1 其次，藉由對經脫氳處理後的基板照射YAG雷射， 對非晶石夕膜10施行雷射回火，使非晶矽膜1〇結晶化（步 S1 04)。若基板面内的既定照射區域已全部進行掃插二' 話，便結束雷射照射（步驟S105)。 然後，對經雷射回火而結晶化的多結晶矽膜4， 照相製版而施行圖案化處理（步驟s丨〇 6)。此時，在施一 案化處理前，界面保護臈便已然形成，所以在施行圖=: 處理之際，非晶矽膜1 〇靠閘極侧表面便不致遭受光阻 光阻剝離液的污染。經圖案化處理過的基板在利用βηι；^ 再利用電難形成閑絕緣膜的閉絕緣膜 依照本實施形態的^，因為在保持真空狀態 才施行氧切膜11的形成，因而將二ί 非日日石夕膜10表面形成自鈇g /μ赠 〇 ^ ^ s 然乳化膜。而且在雷射回火時或昭 =版¥，亦可藉由氧切，而防止 *。、 得在多結晶石夕膜4與氧切膜11之間未存在自 ::的低溫複晶矽m。即’可獲得缺陷位準極低， 動作特性優越的薄膜電晶體。 - ’藉由氧化石夕膜11便將防止多結晶石夕膜4表面被 …光阻液或光阻剝離液中’彳防止在照相製版中，多The substrate is not exposed to the atmosphere or the like from the formation of the amorphous germanium film 1 to the formation of the interface protective film, and the natural oxide film is not formed on the second side of the gate electrode 2 of the amorphous germanium film. The dehydrogenation treatment of the amorphous austenite film 10 is performed after the shape = the protective film 11, and the substrate is subjected to heat treatment. 1 Next, the amorphous enamel film 10 is subjected to laser tempering by irradiating the substrate after the dislocation treatment with a YAG laser to crystallize the amorphous ruthenium film (step S1 04). When all of the predetermined irradiation areas in the surface of the substrate have been scanned, the laser irradiation is ended (step S105). Then, the polycrystalline ruthenium film 4 crystallized by laser tempering is subjected to patterning by photolithography (step s 丨〇 6). At this time, before the application of the case treatment, the interface protection sputum has already formed, so at the time of the implementation diagram =: the amorphous enamel film 1 is not affected by the photoresist photoresist stripping liquid on the gate side surface. . The patterned substrate is in accordance with the present embodiment by using a closed insulating film which is electrically difficult to form a free insulating film by using β?, because the formation of the oxygen cut film 11 is performed while maintaining the vacuum state, and thus The surface of the day's stone film 10 is formed from 鈇g /μ 〇 ^ ^ ^ s emulsified film. Moreover, when the laser is tempered or the version is ¥, it can also be prevented by oxygen cutting. There is no low temperature polycrystalline germanium m from :: between the polycrystalline stone film 4 and the oxygen cutting film 11. That is, a thin film transistor having an extremely low defect level and excellent operational characteristics can be obtained. - 'With the oxidized stone film 11, the surface of the polycrystalline stone film 4 will be prevented from being ... in the photoresist or the photoresist stripping solution.
12780071278007
五、發明說明（16) 結晶石夕膜4表面遭受污染。所以，可抑制薄膜電晶體的動 作特性惡化。 再者，藉由利用電漿CVD而在非晶矽膜1 〇上形成氧化 石夕膜11，相較於依低溫在玻璃基板上形成熱氧化膜的情況 下’成膜速度較快速，可輕易的形成由所需膜厚（例如： lOnm以上的膜厚）所構成的氧化矽膜u。而且，可較依低 溫所形成熱氧化膜形成更密緻的膜，能有效的保護非晶七 膜1 0表面。 再者’本實施形態雖針對在雷射照射前，便形成界面 保護膜的氧化矽膜11之情況為例進行說明，惟本發明並不 僅限於此種情況。例如亦可在雷射照射後的多結晶矽膜4 上形成11。此情況下，可取代YAG雷射，改為採用如：波 長隸屬紫外區域的XeCl準分子雷射。而且，最好包含雷射 ，火^内，攸非晶矽膜i 〇之形成起至氧化矽膜1 1之形成為 i欽ϊ Ξ持真空狀態下施行，目為可防止矽膜表面形成 ^二:广最好基板不要從真空處理室中搬出，因 ίΓΓίί 的話’將可防止在多結晶石夕膜4表面上 形成自然氧化膜。 曰软實施形態雖針對氮㈣膜2、氧切膜3、非 情況為例進行說明，續 中=;持於真空狀態下的話’亦可在不同真空處理室V. INSTRUCTIONS (16) The surface of the crystalline stone film 4 is contaminated. Therefore, deterioration of the operational characteristics of the thin film transistor can be suppressed. Furthermore, by forming a oxidized oxide film 11 on the amorphous ruthenium film 1 by plasma CVD, the film formation speed is faster than that of forming a thermal oxide film on a glass substrate at a low temperature. The yttrium oxide film u is formed by a desired film thickness (for example, a film thickness of lOnm or more). Moreover, a more dense film can be formed than the thermal oxide film formed at a low temperature, and the surface of the amorphous seven film 10 can be effectively protected. Further, in the present embodiment, the case where the ruthenium oxide film 11 of the interface protective film is formed before the laser irradiation is described as an example, but the present invention is not limited to this case. For example, 11 may be formed on the polycrystalline ruthenium film 4 after laser irradiation. In this case, instead of the YAG laser, a XeCl excimer laser such as a wavelength region belonging to the ultraviolet region may be used instead. Moreover, it is preferable to include a laser, a fire, an inner surface of the amorphous ruthenium film i to the formation of the ruthenium oxide film 1 1 and a vacuum state to prevent the formation of the surface of the ruthenium film. Second: the best substrate should not be removed from the vacuum processing chamber, because ίΓΓίί' will prevent the formation of a natural oxide film on the surface of the polycrystalline stone film 4. In the softening embodiment, the nitrogen (tetra) film 2 and the oxygen film 3 are described as an example, and the case is continued; if it is in a vacuum state, it may be in a different vacuum processing chamber.
1278007 五、發明說明（17) 再者，在本實施形態中， 被覆性（覆幻較為良好，亦可3使閘絕緣膜、配線等的 結晶石夕膜4施行圖案化處理在^已=成氧化石夕膜11的多 邊緣部加I成推拔形狀。A情際兄下將氧/石夕膜11與4的圖案 而且可降低配線的短路、斷仍可獲得相同效果， 實施形態2 薄膜ί = 氧化_1之 ;二;陷位準將增加。此種氧化石夕膜η將殘存 晶㈣4與間極6之間。相對於此，在 形悲中，在經照相製版施行圖案化處理之後便去除 乳化矽膜11，藉此便將提昇薄膜電晶體的動作特性。’、 第4圖所示的步驟S201〜S2〇8係本發明實施 :二晶石夕m之製造方*，重要部分一例的流程圖'從步 ⑴至步驟S20 6 ’均如同第3圖所示步驟Sl〇1至步驟 處理順序。若利用照相製版對多結晶石夕膜4施行圖 化處理的話，便利用BHF等藥液施行基板面的清洗。在 π洗之際，氧化矽膜11表面的其中一部份將被BHF等藥 液、，蝕刻液等去除（步驟S2〇7)。另外，此時亦可去除全 化矽膜11。在去除氧化矽膜11之後’再形成閘絕1 膜的閘絕緣膜5(步驟S208)。 在石夕膜上已形成氧化矽膜丨丨的基板，直到形 膜的閑絕緣膜5為止前將被暴露於大氣中，在氧化;5夕膜i】 1278007 五、發明說明（18) ' '一" ，面上將形成自然氧化膜，判斷氧化矽膜丨丨表面的結晶構 造將形成缺陷。所以，藉由去除此種氧化矽膜丨1，便可提 升薄膜電晶體的動作特性。特別係在對多結晶矽膜4施行 圖案化處理的照相製版後，因為去除氧化矽膜11，因而將 防止多結晶矽膜4表面在照相製版之際，被暴露於光阻劑 或光阻剝離液中。 實施形態3 u第7圖所示係相關本發明實施形態3的低溫複晶石夕TF 丁 ，製造方法，重要部分之一例圖，如同第i圖所示實施形 態1 ’圖示截至形成閘絕緣膜5為止的各步驟。 、、’邑、’本|·生基板1係玻璃基板專具絕緣性的透明基板，在 此絕緣性基板丨上依序形成氮化矽膜2、氧化矽膜3、非晶 矽膜10、及氧化矽膜U (第7(a)圖所示步驟）。非晶矽膜1〇 係利用雷射照射而多結晶化，且經離子摻雜而形成活性半 導體層的非晶狀矽膜。氮化矽膜2與氧化矽膜3均屬於使半 導體層特性安定化的絕緣性底塗膜。氧化矽膜n係在製造 步驟中，防止出現裸露出非晶矽膜1〇的狀態，而保護靠閘 極側之界面的絕緣性界面保護膜。 /該等氮化梦膜2、氧化石夕膜3、非晶發膜i (3及氧化石夕膜 11係如同實施形態1的情況，均利用CVD裝置形$。而且， 所有該等層均在CVD裝置的真空處理室内連續地形成。即 基板並未從真空處理室中搬出，而是在保持真空狀態下， 施仃從形成氮化矽膜2起至形成氧化矽膜u的處理。所 以，非晶石夕膜1〇便可在未接觸大氣的情況下，被氧化石夕膜(1) In the present embodiment, the coating property is relatively good, and the crystallized film 4 such as the gate insulating film or the wiring may be patterned. The multi-edge portion of the oxidized stone film 11 is formed into a push-pull shape. A pattern of the oxygen/stone film 11 and 4 can reduce the short-circuit and break of the wiring, and the same effect can be obtained. ί = oxidized _1; second; trapping will increase. This oxidized stone η will remain between the crystal (4) 4 and the interpole 6. In contrast, in the form of sorrow, after patterning by photolithography The emulsified ruthenium film 11 is removed, whereby the operational characteristics of the thin film transistor are improved. 'Steps S201 to S2 〇 8 shown in Fig. 4 are the implementation of the present invention: the manufacturing side of the dicrystalline stone m m, the important part An example of the flow chart 'from step (1) to step S20 6 ' is the same as the step S1 〇 1 to the step processing sequence shown in Fig. 3. If the polycrystalline stone film 4 is imaged by photolithography, it is convenient to use BHF, etc. The liquid medicine is subjected to cleaning of the substrate surface. At the time of π washing, the surface of the ruthenium oxide film 11 is Some of them are removed by a chemical solution such as BHF, an etching solution, etc. (step S2〇7). Further, at this time, the entire ruthenium film 11 can be removed. After the ruthenium oxide film 11 is removed, the film is formed again. The gate insulating film 5 (step S208). The substrate of the yttrium oxide film has been formed on the stone film until the free insulating film 5 of the film is exposed to the atmosphere, and is oxidized; 5 膜膜 i] 1278007 V. Inventive Note (18) ' 'One", a natural oxide film will be formed on the surface, and the crystal structure on the surface of the ruthenium oxide film will be judged to form a defect. Therefore, by removing such a ruthenium oxide film 丨1, The action characteristics of the thin film transistor are improved. Especially after photolithography for patterning the polycrystalline tantalum film 4, since the hafnium oxide film 11 is removed, the surface of the polycrystalline tantalum film 4 is prevented from being exposed at the time of photoengraving. In the photoresist or the photoresist stripping solution, the third embodiment is shown in Fig. 7, which is a schematic diagram of an important part of the method of manufacturing the low-temperature polycrystallite TF, according to the third embodiment of the present invention, as shown in Fig. Embodiment 1 shows that the gate insulating film 5 is formed. Each step: ·, '邑, '本|· Raw substrate 1 is a transparent substrate having a transparent insulating substrate, and a tantalum nitride film 2, a tantalum oxide film 3, and an amorphous germanium are sequentially formed on the insulating substrate. The film 10 and the yttrium oxide film U (step shown in Fig. 7(a)). The amorphous ruthenium film 1 is crystallized by laser irradiation, and is ion-doped to form an amorphous semiconductor layer. The tantalum film, the tantalum nitride film 2 and the tantalum oxide film 3 are all insulating undercoat films for stabilizing the properties of the semiconductor layer. The tantalum oxide film n is in a manufacturing step to prevent the appearance of the exposed amorphous germanium film 1〇. And an insulating interface protective film that protects the interface at the gate side. / The nitriding film 2, the oxidized stone film 3, the amorphous hair film i (3, and the oxidized stone film 11 are as in the first embodiment) In the case, the CVD device is used to form $. Moreover, all of these layers are continuously formed in the vacuum processing chamber of the CVD apparatus. That is, the substrate is not carried out from the vacuum processing chamber, but the process of forming the tantalum oxide film u from the formation of the tantalum nitride film 2 is performed while maintaining the vacuum state. Therefore, the amorphous iridium film can be oxidized by the oxidized stone without being exposed to the atmosphere.
7042-6438-PF(N3);Ahddub.ptd 第22頁 1278007 五、發明說明（19) 11所覆蓋，俾防止在非晶石夕膜1 〇表面上，形成將造成結晶 構造缺陷原因的自然氧化膜。 其中，氧化矽膜11膜厚係l〇〇nm。非晶矽膜10膜厚係 70nm 〇 其次，對已形成氧化矽膜11的基板施行YAG雷射照 射，而將非晶矽膜1 〇多結晶化，便獲得多結晶矽膜4 (第 7 ( b)圖所示步驟）。因為雷射照射時的非晶石夕膜1 〇將被氧 化矽膜11所覆蓋，因而相較於習知的自然冷卻之情況下， 將可抑制熔融矽的冷卻速度。故而將改善矽的結晶成長， 可獲得粒徑更大的多結晶石夕膜4。 再者’本實施形態乃因為截至施行雷射照射之間，非 晶石夕膜10均未被暴露於大氣等含氧的環境氣體中，因此表 面上凡全未形成自然氧化膜。所以，因雷射回火而被活性 化的缺陷極少，可獲得優質的多結晶矽膜4。 再者’ YAG雷射乃因為雷射的照射方向可大致均勻的 進行加熱，因而可在照射方向的垂直方向上（即，基板面 的平行方向）成長結晶。所以，若朝基板面的平行方向掃 描YAG雷射之照射光12的話，非晶矽膜1〇便將依序熔融， 在=由爾後的自然冷卻依序的形成多結晶矽膜4，藉由使 =照射區域在基板面整面上進行移動，便可將非 整面進行多結晶化。 再者’因為將氧化矽膜丨丨膜厚設定為1〇〇ηπι，因而 =抑制雷射回火後的多結晶矽膜4表面出現凹凸情況。者 雷射照射時已熔融的矽在進行固化之際，已固化的矽.將田產7042-6438-PF(N3); Ahddub.ptd Page 22 12780007 V. Inventive Note (19) 11 covered, preventing the formation of natural oxidation on the surface of the amorphous film membrane. Among them, the film thickness of the ruthenium oxide film 11 is l〇〇nm. The amorphous ruthenium film 10 has a film thickness of 70 nm. Next, YAG laser irradiation is applied to the substrate on which the yttrium oxide film 11 has been formed, and the amorphous ruthenium film 1 is crystallized to obtain a polycrystalline ruthenium film 4 (No. 7 ( b) Steps shown in the figure). Since the amorphous iridium film 1 〇 at the time of laser irradiation is covered by the ruthenium oxide film 11, the cooling rate of the enthalpy of fusion can be suppressed as compared with the conventional natural cooling. Therefore, the crystal growth of the crucible is improved, and the polycrystalline litmus film 4 having a larger particle diameter can be obtained. Further, in the present embodiment, since the non-crystallized film 10 is not exposed to an oxygen-containing atmosphere such as the atmosphere as far as the laser irradiation is performed, a natural oxide film is not formed on the surface. Therefore, there are few defects that are activated by laser tempering, and a high-quality polycrystalline ruthenium film 4 can be obtained. Further, the YAG laser is capable of heating substantially uniformly in the irradiation direction of the laser, so that crystal growth can be carried out in the vertical direction of the irradiation direction (i.e., in the parallel direction of the substrate surface). Therefore, if the YAG laser irradiation light 12 is scanned in the parallel direction of the substrate surface, the amorphous ruthenium film 1 will be sequentially melted, and the polycrystalline ruthenium film 4 will be formed in the order of natural cooling after the crystallization. When the = irradiation area is moved over the entire surface of the substrate surface, the non-full surface can be polycrystallized. Further, since the thickness of the ruthenium oxide film is set to 1 〇〇 ηπ, the surface of the polycrystalline ruthenium film 4 after the laser tempering is suppressed from being uneven. The crucible that has melted during laser irradiation is solidified when it is solidified.
1278007 五、發明說明（20) 生體積膨脹現象。換句話說，固體矽的 ^度。利用單次的脈衝雷射光照射而熔: 雷射光強度的搖晃等因素而不會產生均勻情）口化將因 在僅設置氧化矽膜丨丨之情況下施行雷射光昭當 J後固化部分的石夕膜4將因上述的體積膨脹因、的、知例’ 厚較厚於之前已固化的部分。換句話說，多&、日’而使膜 面將發生凹凸情況。氧化矽膜11便具有物理;;：=4表 石夕在固？之因體積膨脹所造成表面凹凸的=此熔融 但疋，氧化矽膜11的玻璃轉移點（黏性率 =下的溫摩）約^⑽^，較低於石夕的融點約i42〇 /p= · s 意味著熔融的非晶矽膜10在熔融固化之際， 乃 軟化。因而若氧化矽膜i i膜厚變薄的 :^ 矽膜u膜厚越厚越有效果。而且， 二表面凹凸的凸部之電場集中，及為求抑制因間：： ?覆不良所引發的耐壓降低情況而降低表面凹凸、 而言，氧化矽膜11膜厚越厚的話越有效果。 銳點 =9圖所示係非晶矽膜1〇上的氧化矽膜u膜厚 ♦ U的多結晶矽膜4表面凹凸間之關係。此處的i二 凹凸係指去除氧化矽膜！〗.，並採用前端徑〇 =觸針式表面測量器(裝置名稱「Talyste .，二觸 J1 0 〇 ,： 4 ^ φ a, , € # ^ ^ ^ I，iL 第3高值與最•算起第⑽值間之差的讀取 值。由第9时得知’當無氧化石夕膜㈣情況時（t = 第24頁 7042-6438-PF(N3);Ahddub.ptd 12780071278007 V. INSTRUCTIONS (20) The phenomenon of volume expansion. In other words, the degree of solid enthalpy. Melting with a single pulse of laser light: factors such as shaking of the intensity of the laser light without causing a uniformity.) The mouthing will be performed after the laser light is applied in the case where only the yttrium oxide film is provided. The stone film 4 will be thicker and thicker than the previously solidified portion due to the above-mentioned volume expansion. In other words, the multiple & day, the surface will be uneven. The yttrium oxide film 11 has physicality;;:==4 The surface irregularities caused by the volume expansion = this melting but 疋, the glass transition point of the yttrium oxide film 11 (viscosity = lower temperature) is about ^(10)^, which is lower than the melting point of Shixi about i42〇/ p = · s means that the molten amorphous ruthenium film 10 is softened at the time of melt solidification. Therefore, if the thickness of the yttrium oxide film i i is thin: ^ The thickness of the ruthenium film u is thicker and more effective. In addition, the electric field of the convex portions of the two surface irregularities is concentrated, and the surface unevenness is reduced in order to suppress the decrease in the withstand voltage caused by the unevenness of the coating: the thicker the thickness of the yttrium oxide film 11 is, the more effective the film is. . Sharp point = 9 shows the relationship between the thickness of the yttrium oxide film on the amorphous ruthenium film 1 ♦ and the surface roughness of the polycrystalline ruthenium film 4 of U. Here i i bump refers to the removal of yttrium oxide film! 〗 〖, and use the front diameter 〇 = stylus surface measuring device (device name "Talyste., two touch J1 0 〇,: 4 ^ φ a, , € # ^ ^ ^ I, iL third high value and most The reading value of the difference between the (10) values is calculated. From the 9th hour, it is known as 'when there is no oxidized stone film (4) (t = page 24, 7042-6438-PF (N3); Ahddub.ptd 1278007
f厚ί 〇的情況）’多結晶矽膜4表面凹凸為55nm，相 石々瞪臌/It化石夕膜膜厚為4nm時則表面凹凸為40nm，氧化 严产的則表面凹凸為i4nm，顯示將隨氧化矽膜 4子^又品、爻于，表面凹凸將減少。所以，在抑制多結晶矽膜 表面凹凸方面，氧化矽膜11膜厚最好設定在4nm以上，尤 以10nm以上為佳。 、再者，若氧化矽膜11膜厚達20 0nm以上的話，在膜的 成膜與去除方面將頗為耗時，因為將導致成本增加，因而 最好避免。所以，氧化矽膜丨丨膜厚必須設定在4nm以上且 2 0 0nm以下的範圍内。尤以1〇nm以上且2〇〇nm以下的範圍内 為佳。 再者，在實施形態1、2、3中，氮化矽膜2、氧化矽膜 3、非^矽膜1〇及氧化，矽膜n，均在CVD裝置的真空處理室 内連續地形成。因而在非晶矽膜丨〇上並不致發生污點。針 對此污點的發生進行調查。 習知方法乃在沉積非晶矽膜丨〇之後，便施行雷射照射 而將非晶石夕膜1 0熔融，在經固化而形成多結晶矽膜4。在 多結晶石夕膜4沉積後，為能在在施行雷射光照射之前的時 間内，便將非晶矽膜1 〇上所附著的雜質、自然氧化膜予以 去除’便在正要施行雷射光照射前，利用疏酸或 BHFCBuffered Hydrogen Fluoride)等藥劑清洗基板表 面。在此清洗的最後階段，為將基板表面上所殘留的硫酸 或BHF予以去除，而利用純水施行清洗。在此利用純水進 行清洗時，在非晶矽膜1 〇表面上有部分將發生污點。f thick ί ) ) ' ' ' 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多The surface roughness will be reduced with the yttrium oxide film 4 and the product. Therefore, the film thickness of the ruthenium oxide film 11 is preferably set to 4 nm or more, particularly preferably 10 nm or more, in suppressing unevenness on the surface of the polycrystalline ruthenium film. Further, if the film thickness of the ruthenium oxide film 11 is 20 nm or more, it will be time consuming in film formation and removal of the film, and it is preferable to avoid the increase in cost. Therefore, the ruthenium oxide film must have a film thickness of 4 nm or more and 200 nm or less. In particular, it is preferably in the range of 1 〇 nm or more and 2 〇〇 nm or less. Further, in the first, second, and third embodiments, the tantalum nitride film 2, the ruthenium oxide film 3, the ruthenium film 1 〇 and the ruthenium film n are continuously formed in the vacuum processing chamber of the CVD apparatus. Therefore, no staining occurs on the amorphous tantalum film. The needle investigates the occurrence of this stain. In the conventional method, after depositing an amorphous tantalum film, laser irradiation is performed to melt the amorphous austenite film 10 and solidified to form a polycrystalline tantalum film 4. After the deposition of the polycrystalline stone film 4, the impurities and the natural oxide film attached to the amorphous ruthenium film 1 are removed in the time before the irradiation of the laser light is applied, and laser light is being applied. Before the irradiation, the surface of the substrate is cleaned with a drug such as acid or BHFC Buffered Hydrogen Fluoride. In the final stage of the cleaning, the sulfuric acid or BHF remaining on the surface of the substrate is removed, and the pure water is used for cleaning. When cleaning with pure water, some of the surface of the amorphous ruthenium film will be stained.
1278007 -------- 五、發明說明（22) 此污點乃屬於由非晶矽膜1〇 原子鬆緩鍵結的S i 〇χ，或溶 、矽原子與純水中的氧 成的物質，在純水去除時(即乾m的分子狀si〇x所構 純水在基板上殘留時間較長的、^驟）中，較容易發生於 於疏水性(撥水性），此亦屬於導膜ι〇原本便屬 因為在爾後的雷射光照射時，有；：：原因。 雷射光產生亂反射現象，而盔^ /了點存在的部分將使 將惡化，即將形成結晶粒徑二的】以結晶性 污點的部分處所製成的薄膜電晶“；化因而在發生 相對於此，在本發明中，田j生將惡化。 = = ==:並未施行清洗步 虽然，在本發明的製造方法中， 义 有施行基板清洗，但是因為最外表面的氧= =望=:將不致發生污點情況。故，有防止製作出特 性惡化薄膜電晶體的效果。 μ Ϊ次’若對已形成氧化石夕膜11的多結晶梦膜4，利用 π相製版施行圖案化處理的肖，便形成構成半導體層的島 狀多結晶矽膜4(第7(c)圖所示步驟）。在此島狀多結晶矽 膜4形成之後，便利用BHF等藥劑清洗基板表面。然後，利 用電漿CVD形成閘絕緣膜的氧化矽膜5(第7(d)圖所示步 驟）。 在施行圖案化處理之際，因為氧化矽膜丨丨形成於非晶 7042-6438-PF(N3);Ahddub.ptd 第26頁 1278007 五、發明說明（23) 石夕膜10上’因此在照相製版之際，石夕膜表面便不致被 ^先阻劑或光阻剝離液中，且矽膜表面上將不致形成自然 化膜。 在實施形態3中，乃於去除氧化矽膜u之後才形成 lUf5。在去除氧化石夕膜11方面，由第7(c)圖、第 一（）圖中得知’可在多結晶石夕膜4施行圖案化處理之 貫鉍’亦可在施行圖案化處理之前便實施 後才實施的情況時，因為多結晶石夕膜4表面：不案致 1 處 離液等之中’因而可抑制污染情況。當 ΐ:=ί理之前便實施的情況時，雖多結晶石夕膜4 表面將因先阻荨而被暴露，但是因為在去除 Ϊ方未裸露出，所以除多結晶石夕膜4圖案部正 ::二 膜3將無遭钱刻的情況產生，因而便可 抑制夕、日日矽膜4圖案蝕刻部的梯 絕緣膜5被覆性的效果。若在RΦ具有&歼閉 的氧化;^ ^彳/；禾^右在圖案化處理之前便去除部分 m去m在圖案化處理之後則全部去除的話，將可 果’因而屬較佳狀況。另外，亦可殘留 積足夠的氧切膜；以；；膜Π在氧”膜11上ΐ 第2圖或第5圖所示薄膜電晶體了、用。然後，便可形成 實施形態4 氧化矽膜，二:3:面祖在雷射光照射時雖界面保護膜採用 所示=由氧::;=::=::於氧化㈣。第㈣ 、、b夕膜所構成多層膜（雙層膜）使 I麵 第27頁 7〇42-6438-PF(N3);Ahddub.ptd 五、發明說明（24) 1為界面保護膜的例+，乃圖示雷射光照射前的剖視構 在第8圖中，1係基板，2係氮化矽膜，3係氧化矽膜， ίο係非晶矽膜，13係厚度10nm的氧化矽膜，14係厚度8〇nm 的亂化⑪膜14。氧切膜13與氮切㈣縣製造步驟中 晶碎膜10成裸露狀態，乃屬於保護靠閑極侧之界面 的絕緣性界面保護膜。 該等氮化石夕膜2、氧化發膜3、非晶石夕膜1〇、氧化石夕膜 13及虱化矽膜14乃如同實施形態1的情況， 且’該等所有層均在㈣装置的真空處理室内 Ϊ:广基板並未被從真空處理内搬出，而是在 =者真，狀態下，施行從氮化石夕膜2之形成起至氮切 膜14之形成為止的處理。 昭射：ί Ul同實施形態1、2、3 ’施行利用yag雷射光 的非晶石夕膜10多晶石夕化、此多晶石夕膜的圖案化 理，便製得薄膜電晶體。 办成閘、名緣膜卓處 142〇Di面化石夕膜14玻璃轉移點係在石夕融點 二 ΐ 鼠矽膜14在雷射光照射時並未軟化。 ，況：氧化_ 3乃為防止氮⑻從氮二夕二表入面凹 嫁融非晶石夕膜1 〇中而設置的。 、^ ; 12780071278007 -------- V. INSTRUCTIONS (22) This stain belongs to the S i 〇χ which is loosely bonded by the amorphous ruthenium film, or the dissolved, ruthenium and oxygen in pure water. The substance is more likely to occur in hydrophobicity (water repellency) when the pure water is removed (that is, the molecular weight of the dry m molecular structure si〇x has a long residual time on the substrate). It belongs to the guide film ι〇 originally because it is irradiated by laser light afterwards;:: reason. The laser light produces a disordered reflection phenomenon, and the portion where the helmet is located will cause deterioration, that is, the thin film electrocrystal formed by the portion of the crystalline stain at the crystal grain size 2; Therefore, in the present invention, the field will deteriorate. = = ==: The cleaning step is not performed. Although, in the manufacturing method of the present invention, the substrate cleaning is performed, but since the outermost surface oxygen = = hope = : There is no possibility of staining. Therefore, there is an effect of preventing the occurrence of a characteristic deterioration of the thin film transistor. μ Ϊ ' 若 若 若 若 若 若 若 若 若 若 若 若 若 若 若 若 若 若 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多 多XI, the island-shaped polycrystalline ruthenium film 4 constituting the semiconductor layer is formed (step shown in Fig. 7(c)). After the island-shaped polycrystalline ruthenium film 4 is formed, it is convenient to clean the surface of the substrate with a drug such as BHF. The ruthenium oxide film 5 of the gate insulating film is formed by plasma CVD (step shown in Fig. 7(d)). At the time of performing the patterning process, the yttrium oxide film is formed on the amorphous 7042-6438-PF (N3). ); Ahddub.ptd Page 26 12780007 V. Inventions (23) Stone On the film 10, therefore, at the time of photolithography, the surface of the stone film is not blocked by the first resist or the photoresist, and the natural film is not formed on the surface of the film. In the third embodiment, the film is removed. After the ruthenium oxide film u is formed, lUf5 is formed. In terms of removing the oxidized stone film 11, it is known from the seventh (c) and first () images that the patterning process can be performed on the polycrystalline stone film 4. 'It can also be implemented after the implementation of the patterning process, because the surface of the polycrystalline stone film 4: not in the case of the liquid separation, etc., thus inhibiting the pollution. When ΐ:=理理In the case of the previous implementation, although the surface of the polycrystalline stone film 4 will be exposed due to the first resistance, but since the removal is not exposed, the pattern of the polycrystalline stone film 4 is:: the second film 3 Since the case where no money is engraved is generated, it is possible to suppress the effect of the coating property of the ladder insulating film 5 on the etching film portion of the enamel film 4 in the evening and the day. If RΦ has the oxidation of the closing film, ^^彳/; ^The right part is removed before the patterning process, and m is removed after the patterning process. Fruit can 'health and thus preferred genus Further, residual product may also sufficient oxygen slit;. ;; film Π ΐ to FIG. 2, or a thin film transistor shown in FIG. 5 in an oxygen "film 11, with. Then, the yttrium oxide film of Embodiment 4 can be formed, and the surface protective film of the surface etchant is irradiated with laser light as shown in Fig. = by oxygen::; =::=:: in oxidation (4). (4), and b-film formed by a multilayer film (two-layer film), I surface, page 27, 7〇42-6438-PF(N3); Ahddub.ptd 5. Invention description (24) 1 is an example of an interface protective film +, the cross-sectional view before the laser light irradiation is shown in Fig. 8, 1 series substrate, 2 series tantalum nitride film, 3 series yttrium oxide film, ίο amorphous film, 13 series 10 nm thick yttrium oxide The film was a 14-series 11 film 14 having a thickness of 8 〇 nm. In the oxygen cutting film 13 and the nitrogen cutting (four) county manufacturing step, the crystal chip 10 is exposed, and is an insulating interface protective film for protecting the interface on the idle side. The nitriding film 2, the oxidized hair film 3, the amorphous enamel film 1 〇, the oxidized stone film 13 and the bismuth telluride film 14 are as in the case of the first embodiment, and 'all of the layers are in the (four) device In the vacuum processing chamber, the wide substrate is not carried out from the vacuum processing, but the treatment from the formation of the nitride film 2 to the formation of the nitrogen cutting film 14 is performed in the state of the true state.昭射: ί Ul, in the same manner as in the first, second, and third embodiments, amorphous ceramsite 10 polycrystals using yag laser light, and patterning of the polycrystalline lithium film, thereby producing a thin film transistor.办 办 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Condition: Oxidation _ 3 is to prevent nitrogen (8) from being set in the surface of the austenite film. , ^ ; 1278007
自光=ί,:沾相關防止形成自然氧化膜的效果、防止來 i二劑=效此 前，亦可去除氮化石夕卜膜14在與夕氧阳化石夕石夕膜膜^于。圖案化處理之 化二!=?’界面保護膜乃使用氧化石夕膜13與氮 對雷射朵属於二、。界面保護膜並不僅限於此，僅要屬於 可佬用/ f锸ί明，且在矽融點不致變質之膜的話便可， 的膜’均可抑制非晶石夕膜的表面凹凸情況。 ，亦可將SiC、Α12〇3等組合氧化石夕膜或氮化石夕膜使用。 者’可將僅去除氮化矽膜14的氧化矽膜13當作閘絕 ，膜或閘絕緣膜其中—部份使用^然後，如同實施形態 ，可形成第2圖或第5圖所示的薄膜電晶體。 實施形態5 在實施形態3中，將氧化矽膜丨i膜厚設定為1〇〇nm，並 照射雷射光。YAG雷射光的照射條件係照射能量密度 〇· 55J/c^2、振盪頻率^。、雷射饋進間距3 。 在貫施形悲4中，將氧化矽膜丨丨膜厚設定為9〇nm。其 他構成要件均如同實施形態3。 本實施例之膜厚9〇nm的氧化矽膜u係具有波長532nm 的YAG雷射光之抗反射膜作用。當無氧化膜（膜厚構 造，且YAH雷射光從垂直方向照射於非晶矽膜面的情況 時，雷射光的反射率約47%。相對於此，將氧化石夕膜^膜 厚設為90nm之情況時的YAG雷射光反射率，將降低至約19% 以下。此乃意味著雷射光的功率（照射能量密度）若相同的From the light = ί,: the effect of preventing the formation of a natural oxide film, preventing the two agents from being effective, and also removing the nitriding film 14 in the cerium oxide film. The patterning treatment of the second!=?' interface protective film is the use of oxidized stone film 13 and nitrogen to the laser is two. The interface protective film is not limited to this, and only the film which can be used and can be deteriorated at the melting point can suppress the surface unevenness of the amorphous film. Alternatively, SiC, Α12〇3, or the like may be used in combination with an oxidized stone film or a nitride film. The yttrium oxide film 13 which removes only the tantalum nitride film 14 can be used as a gate, and the film or the gate insulating film can be used as part of the film, and as in the embodiment, it can be formed as shown in FIG. 2 or FIG. Thin film transistor. (Embodiment 5) In Embodiment 3, the film thickness of the yttrium oxide film 设定i is set to 1 〇〇 nm, and the laser light is irradiated. The irradiation conditions of the YAG laser light are the irradiation energy density 〇·55J/c^2, and the oscillation frequency ^. , laser feed spacing 3 . In the case of the sorrow 4, the ruthenium oxide film thickness was set to 9 〇 nm. Other components are as in Embodiment 3. The yttrium oxide film u having a film thickness of 9 Å in the present embodiment has an anti-reflection film function of YAG laser light having a wavelength of 532 nm. When there is no oxide film (thickness structure and YAH laser light is irradiated from the vertical direction on the surface of the amorphous germanium film, the reflectance of the laser light is about 47%. On the other hand, the thickness of the oxide film is set to The YAG laser light reflectance at 90 nm will be reduced to less than about 19%. This means that the power of the laser light (irradiation energy density) is the same.
1278007 五、發明說明（26) 若設置，厚9〇nm氧化石夕膜u的話，便可 照射進行更廣範圍的熔融。在實施形態5中，即便將雷射射先 的饋進間距設定為4⑽的話，仍可獲得良好的多結晶矽 若依此將卩面保言 蔓膜膜厚設定為#成雷射光之抗 融ίι’ο因ί依相同的照射能量密度便可更廣範圍熔 融非曰曰矽膜10 ’因而可將雷射光的饋進間距設定為較大間 ，，結果便可提昇雷射光照射的產能。實施形 較 貫施形態3之下，產能將提昇3〇%。 Μ 雷射光的反射率不僅隨氧化矽膜u膜厚而改變， 隨非晶矽膜10與氧化矽膜"的折射率而變化。所以，將形 成最小反射率的膜厚’冑必須在測量所使用非晶矽膜盥氧 的折射率之後再決定。本次乃使用非晶石夕膜10折射 率5.13 + 0.6121、氧化矽膜11折射率146 + 〇丨之數值。（依 ，折射率表不。貫數部分表示折射率，虛數部分表示吸收 率。因為設定氧化矽膜屬於無吸收’因而便將虛數部 定為0 i )。 第10圖所示係當將氧化矽膜使用為界面保護膜（ca 膜）的情況時，該氧化矽膜膜厚與YAG雷射光反射率間之關 係圖。顯示出膜厚在87nm以上且98nm以下範圍内，反射率 將為極小值的19%。所以，若將該氧化矽膜“膜厚設定 此範圍内的話，因為YAG雷射光的反射率將 因而屬較佳狀況。 心 再者’當界面保護膜使用氧化矽膜與氮化矽膜的雙層 7042-6438-PF(N3);Ahddub.ptd 第30頁 12780071278007 V. INSTRUCTION OF THE INVENTION (26) If it is provided, a thick 9 〇 nm oxidized oxide film u can be irradiated for a wider range of melting. In the fifth embodiment, even if the feed pitch of the laser shot is set to 4 (10), a good polycrystal can be obtained, and accordingly, the film thickness of the mask is set to be the anti-melting of the laser light. Ίι'ο因ί can melt the non-defective film 10' in a wider range according to the same irradiation energy density. Therefore, the feeding pitch of the laser light can be set to a larger interval, and as a result, the productivity of the laser light irradiation can be improved. Under the implementation of Form 3, the production capacity will increase by 3%.反射 The reflectance of the laser light varies not only with the thickness of the ruthenium oxide film u, but also with the refractive index of the amorphous ruthenium film 10 and the ruthenium oxide film. Therefore, the film thickness '胄 which will form the minimum reflectance must be determined after measuring the refractive index of the amorphous germanium film used for oxygen. In this case, the refractive index of the amorphous iridium film 10 is 5.13 + 0.6121, and the refractive index of the yttrium oxide film 11 is 146 + 〇丨. (According to, the refractive index is not shown. The fractional part indicates the refractive index, and the imaginary part indicates the absorptivity. Since the yttrium oxide film is set to be non-absorbed, the imaginary part is determined to be 0 i ). Fig. 10 is a graph showing the relationship between the film thickness of the yttrium oxide film and the reflectance of the YAG laser light when the yttrium oxide film is used as an interface protective film (ca film). It is shown that the film thickness is in the range of 87 nm or more and 98 nm or less, and the reflectance is 19% of the minimum value. Therefore, if the film thickness of the yttrium oxide film is set within this range, the reflectance of the YAG laser light will be a better condition. The heart is further used when the interface protective film uses a tantalum oxide film and a tantalum nitride film. Layer 7042-6438-PF(N3); Ahddub.ptd Page 30 12780007
膜之情況時，於將氧化矽膜13膜厚設定為1〇nm、將氮化矽 膜1 4膜，設定為6Onm附近的情況時，雷射光的反射率將達 最$狀態。此外，如實施形態4所述，當將Sic、a12〇3等組 合氧化矽膜或氮化矽膜而形成界面保護膜的情況時，藉由 考慮各膜的折射率之後再將膜厚最佳化的話，仍可獲得相 同的效果。 實施形態6 若依照實施形態1〜5中任一製造方法製作薄膜電晶體 的活’在製程結束後的多結晶矽膜4中，將混入1 χ 1 〇ls個 /cm3以上的氧。在此，若矽膜中的氧濃度達高於1 X i〇2Q個 /cm3之南濃度的話，氧在多結晶矽膜4中將形成團簇 (cluster)，造成電流的屏障，因為薄膜電晶體特性將劣 化，因而不致對本發明所製得薄膜電晶體的特性造成影響 之氧濃度範圍，最好設定在1 018個/cm3以上、且1 X丨〇2〇 個/cm3以下〇 此外’若雷射光脈衝對同一地方照射多數次的話，氧 化石夕膜11或氧化矽膜1 3的氧被吸入熔融矽膜中的時間將拉 長’因而多結晶矽膜4中的氧濃度將上升高於1 X 個 /cm3。所以’當雷射光照射之際，便必須依多結晶石夕膜4中 的氧濃度達1 X l(p個/cm3以下的狀態，決定雷射光饋進間 距、照射能量密度。 在本實施形態中，藉由將雷射光饋進間距設定在2 a m 以上’將照射能量密度設定在〇· 7J/cm2以下的話，便可將 多晶矽膜中的氧濃度形成在1 χ 1 〇2〇個/cm3以下。In the case of a film, when the film thickness of the yttrium oxide film 13 is set to 1 〇 nm and the film of the yttrium nitride film 14 is set to be around 6 Onm, the reflectance of the laser light reaches the maximum state. Further, as described in the fourth embodiment, when Sic, a12〇3 or the like is combined with a ruthenium oxide film or a tantalum nitride film to form an interface protective film, the film thickness is optimized by considering the refractive index of each film. If you do, you can still get the same effect. (Embodiment 6) In the polycrystalline ruthenium film 4 after the completion of the process, the production of the thin film transistor is carried out in accordance with any of the manufacturing methods of the first to fifth embodiments, and oxygen of 1 χ 1 〇 ls / cm 3 or more is mixed. Here, if the oxygen concentration in the ruthenium film is higher than the south concentration of 1×i〇2Q/cm3, oxygen will form a cluster in the polycrystalline ruthenium film 4, causing a current barrier because the thin film electricity The crystal characteristics are deteriorated, so that the oxygen concentration range which does not affect the characteristics of the thin film transistor produced by the present invention is preferably set to 1,018 pieces/cm3 or more and 1 X丨〇2〇/cm3 or less. When the laser light pulse is irradiated to the same place for a plurality of times, the time during which the oxygen of the oxidized oxide film 11 or the yttrium oxide film 13 is sucked into the molten ruthenium film will be elongated, and thus the oxygen concentration in the polycrystalline ruthenium film 4 will rise higher than 1 X / cm3. Therefore, when the laser beam is irradiated, it is necessary to determine the laser light feed pitch and the irradiation energy density depending on the oxygen concentration in the polycrystalline quartz film 4 of 1×1 (p/cm3 or less). In the case where the laser light feed pitch is set to 2 am or more and the irradiation energy density is set to 〇·7 J/cm 2 or less, the oxygen concentration in the polycrystalline silicon film can be formed at 1 χ 1 〇 2 〇 / cm 3 . the following.
7〇42.6438-PF(N3);Ahddub.ptd7〇42.6438-PF(N3); Ahddub.ptd
1278007 五、發明說明（28) 再者’在貫施形態1至6中，亦可將所製得薄膜電晶體 使用於顯不裝置。顯示裝置亦可為使用液晶者， 用電激發光（EL)者。若屬於使用且古夕 ^ 蜀仏使用具有多晶矽膜之薄膜電晶 體的顯示裝置的話，當然亦可適用於咚μ、+、# 田…、Λί 4 用於除上述以外的顯示裝 置。 .、 再者’實施形態1至6中的雷射回火之雷射雖採用γΑ(; 雷射（二次諧波、波長532nm)，但是若使用屬於多晶矽膜 中的穿透性較高，且結晶化之際可獲得較大粒徑結晶粒之 波長的370nm至710nm雷射的話，仍可獲得相同的效果。此 外，若對界面保護膜屬於穿透性較高之波長的話，亦可使 用準分子雷射等其他雷射。氧化矽膜或氮化矽膜對普通的 準分子雷射波長308nm之光，乃屬於透明的。當使用準分 子雷射之際，特別係當紫外光區域穿情況時/因為在石夕77膜 中的穿透性較低，因而最好將非晶矽膜1〇膜厚設定在7〇㈣ 以下。另外，雷射可為振靈模式，亦可為連續模式。1278007 V. DESCRIPTION OF THE INVENTION (28) Further, in the form of the first to sixth embodiments, the obtained thin film transistor can also be used for a display device. The display device may be a person who uses liquid crystals and uses electric excitation light (EL). If it is a display device which uses a thin film transistor having a polycrystalline germanium film, it is of course also applicable to 咚μ, +, #田..., Λί 4 for display devices other than the above. Furthermore, 'the lasers for laser tempering in Embodiments 1 to 6 use γΑ(; laser (second harmonic, wavelength 532 nm), but if the penetration into the polycrystalline germanium film is high, When the 370 nm to 710 nm laser having a wavelength of a larger particle size crystal grain can be obtained at the time of crystallization, the same effect can be obtained. Further, if the interface protective film is a wavelength having a high penetrability, it can also be used. Other lasers such as excimer lasers. The yttrium oxide film or tantalum nitride film is transparent to common excimer laser wavelengths of 308 nm. When using excimer lasers, especially when UV light is worn In the case of / because the penetration in the film of Shi Xi 77 is low, it is preferable to set the film thickness of the amorphous ruthenium film to 7 〇 (4) or less. In addition, the laser may be in a vibration mode or continuous mode.
12780071278007
【圖示簡單說明】 石夕ΊΤΐ第it)、圖至第1(d)圖為本發明實施形態1的低溫複晶 裏造程序，重要部分之一例的步驟圖。 圖為本發明實施形態1的薄膜電晶體之一構造例剖 不見圖。 第3圖為本發明實施形態i的低溫複晶矽tft之製造方 、’重要部分之一例的流程圖。 第4圖為本發明實施形態2的低溫複晶矽TFT之製造方 ° ’重要部分之一例的流程圖。 ，5圖為省知低溫複晶石夕T F T構造例剖視圖。 第6 (a)圖至第6(d)圖為習知低溫複晶矽TFT之製造程 序’重要部分之一例的步驟圖。 第7(a)圖至第7(d)圖為本發明實施形態3的低溫複晶 石夕TFT^之製造程序，重要部分之一例的步驟圖。 第8圖為本發明實施形態4的低溫複晶矽Τ{?Τ之製造程 序’重要部分之一例的步驟圖。 第9圖為本發明實施形態3的低溫複晶矽之製造程序， 界面保護膜膜厚與多晶矽膜表面凹凸間之關係圖。 第1 0圖為本發明實施形態5的低溫複晶矽之製造程 序，界面保護膜的氧化矽膜膜厚、與YAG雷射光反射 之關係圖。 【主要元件符號說明】 1〜絕緣性基板； 2〜氮化矽膜；BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(d) is a flow chart showing an example of an important part of the low temperature polycrystalline inlaid program according to the first embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a structural example of a thin film transistor according to a first embodiment of the present invention. Fig. 3 is a flow chart showing an example of the manufacture of the low-temperature polycrystalline silicon tft according to the embodiment i of the present invention. Fig. 4 is a flow chart showing an example of an important part of the manufacturing process of the low-temperature polysilicon TFT according to the second embodiment of the present invention. Fig. 5 is a cross-sectional view showing a structural example of a low temperature polycrystalline quartzite T F T structure. Figs. 6(a) to 6(d) are process diagrams showing an example of an important part of the manufacturing process of a conventional low-temperature polysilicon TFT. 7(a) to 7(d) are process diagrams showing an example of an important part of the manufacturing procedure of the low-temperature polycrystalline quartz wafer TFT according to the third embodiment of the present invention. Fig. 8 is a flow chart showing an example of an important part of the manufacturing process of the low temperature polycrystalline silicon crucible according to the fourth embodiment of the present invention. Fig. 9 is a view showing the relationship between the thickness of the interface protective film and the unevenness of the surface of the polycrystalline silicon film in the manufacturing procedure of the low temperature polycrystalline silicon crucible according to the third embodiment of the present invention. Fig. 10 is a view showing the relationship between the thickness of the ruthenium oxide film of the interface protective film and the YAG laser light reflection in the manufacturing process of the low temperature polycrystalline silicon crucible according to the fifth embodiment of the present invention. [Main component symbol description] 1~Insulating substrate; 2~ Tantalum nitride film;
7042-6438-PF(N3);Ahddub.ptd 第 33 頁 1278007 圖式簡單說明 3〜氧化矽膜； 5〜閘絕緣膜； 6〜閘極； 8〜源極與汲極； 9〜氮化矽膜； 11〜氧化矽膜； 1 3〜氧化矽膜； 4〜多結晶矽膜； 5〜氧化矽膜； 7〜層間絕緣膜； 9〜保護膜； 1 0〜非晶矽膜； 1 2〜照射光； 1 4〜氮化石夕膜。7042-6438-PF(N3); Ahddub.ptd Page 33 12780007 The diagram briefly illustrates 3~ yttrium oxide film; 5~ gate insulating film; 6~ gate; 8~ source and drain; 9~ tantalum nitride Film; 11~ yttrium oxide film; 1 3~ yttrium oxide film; 4~ polycrystalline yttrium film; 5~ yttrium oxide film; 7~ interlayer insulating film; 9~ protective film; 1 0~ amorphous yttrium film; Irradiation light; 1 4~ nitride film.
7042-6438-PF(N3);Ahddub.p td 第34頁7042-6438-PF(N3); Ahddub.p td第34页
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003281420 | 2003-07-29 | ||
| JP2004030664A JP2005064453A (en) | 2003-07-29 | 2004-02-06 | Thin film transistor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200504821A TW200504821A (en) | 2005-02-01 |
| TWI278007B true TWI278007B (en) | 2007-04-01 |
Family
ID=34380152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093120578A TWI278007B (en) | 2003-07-29 | 2004-07-09 | Thin film transistor and its manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005064453A (en) |
| KR (1) | KR100661104B1 (en) |
| CN (1) | CN100336189C (en) |
| TW (1) | TWI278007B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| KR20060106170A (en) * | 2005-04-06 | 2006-10-12 | 삼성전자주식회사 | Method for making a poly crystalline silicon thin film and thin film transistor making method for having the same |
| JP5053610B2 (en) * | 2006-09-29 | 2012-10-17 | 富士フイルム株式会社 | Laser annealing method, semiconductor film, semiconductor device, and electro-optical device |
| JP5305630B2 (en) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | Manufacturing method of bottom gate type thin film transistor and manufacturing method of display device |
| CN102064109B (en) * | 2010-11-08 | 2013-05-29 | 友达光电股份有限公司 | Thin film transistor and manufacturing method thereof |
| WO2012081474A1 (en) * | 2010-12-14 | 2012-06-21 | シャープ株式会社 | Method for forming crystalline semiconductor film |
| CN104658898A (en) * | 2013-11-22 | 2015-05-27 | 上海和辉光电有限公司 | Method for manufacturing low-temperature polycrystalline silicon film |
| CN105655355A (en) * | 2016-02-01 | 2016-06-08 | 武汉华星光电技术有限公司 | Manufacturing method of array substrate |
| CN107170833A (en) * | 2017-06-14 | 2017-09-15 | 华南理工大学 | A kind of amorphous oxide thin film transistor and preparation method thereof |
| CN108288619A (en) * | 2018-01-12 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | A kind of array substrate and preparation method thereof, display device |
| US11069724B2 (en) | 2018-01-12 | 2021-07-20 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, manufacturing method thereof and display device using the same |
| CN109585366A (en) * | 2018-12-03 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Low temperature polycrystalline silicon display panel manufacturing method |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04328872A (en) * | 1991-04-26 | 1992-11-17 | A G Technol Kk | Manufacture of polycrystalline thin film transistor and polycrystalline thin film transistor |
| JP3897826B2 (en) * | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | Active matrix display device |
| JPH0897141A (en) * | 1994-09-22 | 1996-04-12 | A G Technol Kk | Method of forming polycrystalline semiconductor layer, polycrystalline semiconductor tft, and beam annealing device |
| JPH0992618A (en) * | 1995-09-25 | 1997-04-04 | Toshiba Corp | Production of polysilicon, thin film transistor and fabrication thereof, and liquid crystal display |
| JPH11354441A (en) * | 1998-06-08 | 1999-12-24 | Seiko Epson Corp | Manufacture of semiconductor device |
| JP2000058847A (en) * | 1998-07-31 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device with semiconductor circuit consisting of semiconductor element and manufacture thereof |
| JP2000260995A (en) * | 1999-03-10 | 2000-09-22 | Matsushita Electric Ind Co Ltd | Manufacture of thin-film semiconductor device |
| JP3279280B2 (en) * | 1999-04-15 | 2002-04-30 | 松下電器産業株式会社 | Method for manufacturing thin film semiconductor device |
| JP2002093704A (en) * | 2000-09-18 | 2002-03-29 | Crystage Co Ltd | Thin-film semiconductor device and its manufacturing apparatus |
| SG113399A1 (en) * | 2000-12-27 | 2005-08-29 | Semiconductor Energy Lab | Laser annealing method and semiconductor device fabricating method |
| JP4901020B2 (en) * | 2001-05-23 | 2012-03-21 | 東芝モバイルディスプレイ株式会社 | Method for manufacturing polysilicon thin film transistor |
| JP2002353137A (en) * | 2001-05-24 | 2002-12-06 | Matsushita Electric Ind Co Ltd | Method for fabricating thin film semiconductor element |
| JP3942853B2 (en) * | 2001-08-28 | 2007-07-11 | 株式会社半導体エネルギー研究所 | Semiconductor material manufacturing equipment |
-
2004
- 2004-02-06 JP JP2004030664A patent/JP2005064453A/en active Pending
- 2004-07-09 TW TW093120578A patent/TWI278007B/en not_active IP Right Cessation
- 2004-07-20 KR KR1020040056221A patent/KR100661104B1/en not_active IP Right Cessation
- 2004-07-29 CN CNB2004100590452A patent/CN100336189C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200504821A (en) | 2005-02-01 |
| CN1577773A (en) | 2005-02-09 |
| KR20050013928A (en) | 2005-02-05 |
| CN100336189C (en) | 2007-09-05 |
| JP2005064453A (en) | 2005-03-10 |
| KR100661104B1 (en) | 2006-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI374546B (en) | Method of manufacturing thin film transistor, thin film transistor, and display unit | |
| TWI278007B (en) | Thin film transistor and its manufacturing method | |
| JP4045731B2 (en) | Thin film semiconductor device manufacturing method | |
| JPH1187241A (en) | Polycrystalline semiconductor material, manufacture thereof, semiconductor device using the material and evaluation of the device | |
| KR20130023021A (en) | Method for crystallizing silicon thin film and method for manufacturing silicon tft device | |
| JP2000156346A (en) | Semiconductor device, and manufacture thereof | |
| JPH1140501A (en) | Semiconductor device and method for manufacturing it | |
| TWI244214B (en) | Semiconductor device and method of fabricating a LTPS film | |
| JPH03244136A (en) | Manufacture of thin-film transistor | |
| JPH06163401A (en) | Formation of polycrystalline silicon layer and polycrystalline silicon thin film transistor using same | |
| JPS60202931A (en) | Manufacture of semiconductor device | |
| JP4223590B2 (en) | Method for manufacturing polycrystalline semiconductor | |
| JPS6235571A (en) | Manufacture of semiconductor device | |
| JP2003168646A (en) | Method of manufacturing semiconductor device | |
| JP2006216600A (en) | Method of manufacturing thin-film semiconductor and thin-film transistor manufactured by this manufacturing method | |
| JP4239744B2 (en) | Thin film transistor manufacturing method | |
| JP2005005381A (en) | Method of manufacturing crystalline semiconductor material and semiconductor device | |
| JP2000068518A (en) | Manufacture of thin-film transistor | |
| JP2003318108A5 (en) | ||
| JP3279280B2 (en) | Method for manufacturing thin film semiconductor device | |
| JP4214561B2 (en) | Thin film transistor manufacturing method | |
| JPS6325913A (en) | Manufacuture of semiconductor thin film | |
| RU2807779C1 (en) | Method for forming polycrystalline silicon | |
| JP4271453B2 (en) | Semiconductor crystallization method and thin film transistor manufacturing method | |
| JPS62119974A (en) | Manufacture of thin film transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |