CN107170833A - A kind of amorphous oxide thin film transistor and preparation method thereof - Google Patents
A kind of amorphous oxide thin film transistor and preparation method thereof Download PDFInfo
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- CN107170833A CN107170833A CN201710448040.6A CN201710448040A CN107170833A CN 107170833 A CN107170833 A CN 107170833A CN 201710448040 A CN201710448040 A CN 201710448040A CN 107170833 A CN107170833 A CN 107170833A
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- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 238000010301 surface-oxidation reaction Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 description 11
- 238000013532 laser treatment Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Thin Film Transistor (AREA)
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Abstract
The invention belongs to display device technical field, a kind of amorphous oxide thin film transistor and preparation method thereof is disclosed.The preparation method is：Magnetically controlled DC sputtering Al on the glass substrate:Nd film gates, then surface oxidation growth gate insulator AlOx:Nd；The STO thin film actives layer that deposit thickness is 5~30nm on gate insulation layer, then magnetically controlled DC sputtering prepares source/drain electrode on STO films；Last obtained device is 20~100mJ/cm in energy density2All-solid state laser under the conditions of carry out laser energy density processing, obtain the amorphous oxide thin film transistor.The present invention handles TFT devices using all-solid state laser, and device performance can reach close with thermal anneal process device performance, effectively save production cost.
Description
Technical field
The invention belongs to display device technical field, and in particular to a kind of amorphous oxide thin film transistor and its preparation side
Method.
Background technology
In recent years, amorphous oxide thin film transistor (TFT) is with driven with active matrix liquid crystal display (AMLCD), active
Played an important role in matrix organic LED (AMOLED) and the presentation of information that Electronic Paper (E-paper) is representative.Amorphous
The advantages of oxide TFT has higher mobility, low preparation temperature, high uniformity can meet current Display Technique towards big chi
The requirement that the direction such as very little, high-resolution and flexibility is developed.
Usually require to improve the electric property of device by annealing for amorphous oxides TFT.Because moving back
Fire processing can not only reduce the defect of defect and active layer/gate insulator layer interface inside active layer, can also improve active
Contact quality formation Ohmic contact between layer and electrode.Traditional method for annealing is atmosphere thermal annealing, equiflux heater part so that
Atom obtains redistributed power in active layer material, fills up defect state, but annealing has the following disadvantages：1. film is heated
Reduction defect state is rearranged by interior atoms warm-up movement, it is necessary to for a long time, cause the thermal annealing time very long, generally with small
When be unit.2. device each several part is needed to heat simultaneously, therefore very high requirement is needed to annealing device uniform temperature rise.3. due to
Oxide TFT is made up of a variety of thin-film materials, and each component thermal coefficient of expansion is different, and thermal annealing can cause device thermal stress to increase
Greatly.4. due to the flexible base board non-refractory in flexible TFT devices, it is impossible to improve device performance by being heat-treated so that at heat
Manage sample type limited.5. in order to improve device performance, often can in the case where multiple atmosphere mixes annealing or non-inert atmosphere thermal annealing,
Cause dangerous.
The content of the invention
In place of the shortcoming and defect existed for above prior art, primary and foremost purpose of the invention is to provide a kind of amorphous
The preparation method of oxide thin film transistor.
Another object of the present invention is to provide a kind of amorphous oxide thin film crystal prepared by the above method
Pipe.
The object of the invention is achieved through the following technical solutions：
A kind of preparation method of amorphous oxide thin film transistor, including following preparation process：
(1) magnetically controlled DC sputtering Al on the glass substrate:Nd films are as grid, then in Al:Nd film gates surface
Oxidation growth AlOx:Nd gate insulators；
(2) rf magnetron sputtering deposition oxide semiconductor (STO) film on gate insulation layer is used, having for TFT is used as
Active layer, oxide semiconductor thin-film thickness is 5~30nm；
(3) using photoetching technique, magnetically controlled DC sputtering prepares source/drain electrode on STO films；
(4) it is 20~100mJ/cm in energy density by step (3) obtained device2All-solid state laser under the conditions of swashed
Optical energy density processing, obtains the amorphous oxide thin film transistor (STO-TFT).
Preferably, Al described in step (1):The thickness of Nd films is 100~300nm；The AlOx:Nd gate insulators
Thickness be 200~400nm.
Preferably, Al described in step (1):Nd doping concentration is 1~5at%.
Preferably, the material of described oxide semiconductor thin-film is STO-5 (SiO2:SnO2=5:95wt%).
Preferably, the wavelength of the all-solid state laser is 230~400nm.
A kind of amorphous oxide thin film transistor, is prepared by the above method.
The present invention principle be：All-solid state laser is selected to carry out laser annealing processing to STO-TFT.1. laser is due to wavelength
Short, energy is high, it may not be necessary to inert gas or vacuum environment, quick thoroughly eliminate inside film can lack in a short time
Fall into, obtain high-quality thin film.2. laser has high-energy, the characteristics of action time is short so that film interior atoms absorb energy
But have little time to reach equilibrium state, can only adjust in the original location, material deformation is small, reduce stresses of parts distortion.3. laser can pass through
Optical shaping, Local treatment (channel region and source-drain electrode and active layer overlay region) can be carried out to device, energy dissipation is reduced.
4. when laser irradiates TFT, device surface obtains higher temperature, because laser action time short temperature has little time diffusion, no
Substrate temperature rise can be made too high, it is possible to achieve handle flexible device.
The preparation method and resulting amorphous oxide thin film transistor of the present invention has the following advantages that and beneficial effect：
The present invention processing TFT device times it is short, device performance can reach it is close with thermal anneal process device performance, effectively
Save production cost.
Brief description of the drawings
Fig. 1 is the structural representation of the oxide thin film transistor of the embodiment of the present invention.
Fig. 2, Fig. 3 and Fig. 4 be respectively embodiment step (3) handled without laser energy density device, through thermal annealing at
The output characteristic curve figure of the device of reason and the STO-TFT of embodiment step (4) laser treatment.
Fig. 5 is the transfer characteristic curve without laser energy density processing, thermal anneal process and laser treatment STO-TFTs
Figure.
Fig. 6 is laser treatment STO-TFT schematic diagrames in embodiment.
Fig. 7 is suction of the device STO films that handle without laser energy density of embodiment step (3) to different wave length laser
Yield curve figure.
Fig. 8 STO-TFT obtained by after different laser energy density processing in embodiment transfer characteristic curve figure.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited
In this.
Embodiment
A kind of amorphous oxide thin film transistor of the present embodiment, its structure structural representation is as shown in Figure 1.The oxidation
Thing thin film transistor (TFT) sequentially consists of glass substrate 11, Al:Nd film gates 12, AlOx:Nd gate insulators 13, STO
Thin film active layer 14 and source/drain electrode 15, wherein source/drain electrode 15 are located at same layer with active layer 14, and source/drain electrode 15 is distributed
At the two ends of active layer 14.
The amorphous oxide thin film transistor of the present embodiment is prepared via a method which：
(1) 100~300nm of magnetically controlled DC sputtering Al on the glass substrate:Nd films are as grid, then in Al:Nd
Film gates surface oxidation grows 200~400nm gate insulator AlOx:Nd；
(2) using rf magnetron sputtering deposition oxide semiconductor STO-5 (SiO on gate insulation layer2:SnO2=5:
95wt%) film, as TFT active layer, oxide semiconductor thin-film thickness is 5~20nm；
(3) using photoetching technique, magnetically controlled DC sputtering prepares source/drain electrode on STO films；
(4) it is 550~950 in power factor by step (3) obtained device, the distance of sample to field lens is 20-50cm, is swashed
Optical energy density is 20~100mJ/cm2, wavelength for 355nm all-solid state laser under the conditions of carry out laser energy density processing,
Obtain the amorphous oxide thin film transistor (STO-TFT).
The output characteristic curve for the device that the present embodiment step (3) is handled without laser energy density is as shown in Figure 2.Its
In, curve 21,22,23,24 is corresponded in V respectivelyGSFor 0V, 10V, 20V, output characteristic curve during 30V；Fig. 3 is at thermal annealing
Manage the STO-TFT of (350 DEG C, 30~60min) output characteristic curve.Wherein, curve 31,32,33,34 correspond in V respectivelyGSFor
Output characteristic curve when 0V, 10V, 20V, 30V；Fig. 4 is the STO-TFT of embodiment step (4) laser treatment output characteristics
Curve.Wherein, curve 41,42,43,44 correspond in V respectivelyGSFor 0V, 10V, 20V, output characteristic curve during 30V；Fig. 5 is not
Handled through laser energy density, thermal anneal process and laser treatment STO-TFTs transfer characteristic curve.Wherein, curve 51 is not
The STO-TFT handled through laser energy density transfer characteristic curve, curve 52 is special for the STO-TFT of thermal anneal process transfer
Linearity curve, curve 53 is the transfer characteristic curve of laser treatment.
Fig. 6 is the present embodiment laser treatment STO-TFT schematic diagrames.Wherein 66 be the all-solid state laser that wavelength is 355nm.
Fig. 7 is the device STO films that handle without laser energy density of the present embodiment step (3) to different wave length laser
Absorbance curves.
Fig. 8 is the transfer characteristic curve of gained STO-TFT after different laser energy density is handled.
As can be seen from the above results, the STO-TFT without laser treatment does not have device performance, the energy irradiated with laser
Amount gradually rises, and device engenders transfer characteristic curve.Illustrate that STO-TFT can obtain device performance by laser treatment.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences without departing from the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (6)
1. a kind of preparation method of amorphous oxide thin film transistor, it is characterised in that including following preparation process：
(1) magnetically controlled DC sputtering Al on the glass substrate:Nd films are as grid, then in Al:Nd film gates surface oxidations
Grow AlOx:Nd gate insulators；
(2) rf magnetron sputtering deposition oxide semiconductive thin film on gate insulation layer is used, as active layer, oxide is partly led
Body thin film thickness is 5~30nm；
(3) using photoetching technique, magnetically controlled DC sputtering prepares source/drain electrode on STO films；
(4) it is 20~100mJ/cm in energy density by step (3) obtained device2All-solid state laser under the conditions of carry out laser energy
Metric density processing, obtains the amorphous oxide thin film transistor.
2. a kind of preparation method of amorphous oxide thin film transistor according to claim 1, it is characterised in that：Step
(1) Al described in:The thickness of Nd films is 100~300nm；The AlOx:The thickness of Nd gate insulators is 200~400nm.
3. a kind of preparation method of amorphous oxide thin film transistor according to claim 1, it is characterised in that：Step
(1) Al described in:Nd doping concentration is 1~5at%.
4. a kind of preparation method of amorphous oxide thin film transistor according to claim 1, it is characterised in that：Described
The material of oxide semiconductor thin-film is STO-5.
5. a kind of preparation method of amorphous oxide thin film transistor according to claim 1, it is characterised in that：It is described complete
The wavelength of solid-state laser is 230~400nm.
6. a kind of amorphous oxide thin film transistor, it is characterised in that：Pass through the method system described in any one of Claims 1 to 5
It is standby to obtain.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710448040.6A CN107170833A (en) | 2017-06-14 | 2017-06-14 | A kind of amorphous oxide thin film transistor and preparation method thereof |
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| CN201710448040.6A CN107170833A (en) | 2017-06-14 | 2017-06-14 | A kind of amorphous oxide thin film transistor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231905A (en) * | 2017-12-13 | 2018-06-29 | 华南理工大学 | A kind of preparation method of laser treatment amorphous oxide thin film transistor |
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| JP2007220918A (en) * | 2006-02-16 | 2007-08-30 | Ulvac Japan Ltd | Laser annealing method, thin-film semiconductor device, manufacturing method thereof, display, and manufacturing method thereof |
| US20070290200A1 (en) * | 2006-06-02 | 2007-12-20 | Sony Corporation | Thin film semiconductor device, method of manufacturing the same and display |
| CN105321827A (en) * | 2015-10-26 | 2016-02-10 | 华南理工大学 | Preparation method for wet etching type oxide thin film transistor and prepared thin film transistor |
| CN105552114A (en) * | 2015-12-14 | 2016-05-04 | 华南理工大学 | Thin film transistor based on amorphous oxide semiconductor material and preparation method thereof |
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- 2017-06-14 CN CN201710448040.6A patent/CN107170833A/en active Pending
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| CN1577773A (en) * | 2003-07-29 | 2005-02-09 | 三菱电机株式会社 | Thin film transistor and producing method thereof |
| JP2007220918A (en) * | 2006-02-16 | 2007-08-30 | Ulvac Japan Ltd | Laser annealing method, thin-film semiconductor device, manufacturing method thereof, display, and manufacturing method thereof |
| US20070290200A1 (en) * | 2006-06-02 | 2007-12-20 | Sony Corporation | Thin film semiconductor device, method of manufacturing the same and display |
| CN105321827A (en) * | 2015-10-26 | 2016-02-10 | 华南理工大学 | Preparation method for wet etching type oxide thin film transistor and prepared thin film transistor |
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Application publication date: 20170915 |