CN108231905A - A kind of preparation method of laser treatment amorphous oxide thin film transistor - Google Patents
A kind of preparation method of laser treatment amorphous oxide thin film transistor Download PDFInfo
- Publication number
- CN108231905A CN108231905A CN201711323516.XA CN201711323516A CN108231905A CN 108231905 A CN108231905 A CN 108231905A CN 201711323516 A CN201711323516 A CN 201711323516A CN 108231905 A CN108231905 A CN 108231905A
- Authority
- CN
- China
- Prior art keywords
- thin film
- amorphous oxide
- film transistor
- amorphous
- oxide thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000013532 laser treatment Methods 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- DOVLZBWRSUUIJA-UHFFFAOYSA-N oxotin;silicon Chemical compound [Si].[Sn]=O DOVLZBWRSUUIJA-UHFFFAOYSA-N 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 11
- 239000008186 active pharmaceutical agent Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to display device technical fields, disclose a kind of preparation method of laser treatment amorphous oxide thin film transistor.Magnetically controlled DC sputtering Al on the glass substrate:Then Nd films grow AlOx as grid and graphical by anodic oxidation:Nd gate insulating layers, then deposited amorphous oxide semiconductor thin-film is as active layer on gate insulation layer using rf magnetron sputtering, by the device of gained in energy density ranging from 40~70mJ/cm2266nm all-solid state lasers under the conditions of be irradiated, finally using mask method on amorphous oxide semiconductor film magnetically controlled DC sputtering prepare source/drain electrode, obtain the amorphous oxide thin film transistor.The all solid state laser of the TFT devices use 266nm wavelength of the present invention is quickly handled, and is made annealing treatment without Long Time Thermal and is obtained device performance, effectively saves production cost.
Description
Technical field
The invention belongs to display device technical fields, and in particular to a kind of laser treatment amorphous oxide thin film transistor
Preparation method.
Background technology
In recent years, flat panel display is quickly grown, and is mainly used in smart mobile phone, tablet computer, TV, display etc.
Field.Wherein, amorphous oxide thin film transistor (TFT) is due to having higher mobility, low temperature process, high uniformity etc. excellent
Point is being the flat of representative with driven with active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED)
Plate plays an important role in showing.
For amorphous oxides TFT, embryo deposit state sull there are a large amount of internal flaw states and active layer/
The defects of gate insulator layer interface, it usually needs by different thermal anneal process techniques come reduce sull internal flaw state and
The defects of active layer/gate insulator layer interface state, improve the electric property of device.Traditional method for annealing has air thermal annealing, true
Air atmosphere thermal annealing, quick atmosphere thermal annealing etc..But thermal anneal process usually has the following disadvantages：1. film interior atoms absorb
The thermal energy that the external world is given rearranges reduction defect state, and annealing temperature needs very high (>=300 DEG C), and annealing time length (>=
1h), production cost is high；2. amorphous oxides TFT is stacked by multilayered film material, and the coefficient of thermal expansion of layers of material
Difference, graphically also different, thermal annealing can cause device inside stress variation, be easy to cause device performance failure；3. in order to carry
High and optimized device performance, can often anneal under a variety of mixed atmospheres, cause it is dangerous, to the requirement of annealing device safety coefficient
It is high.
Laser is since with brightness height, the features such as good directionality, monochromaticjty is good, and coherence is good, and action time is short, mainly should
Used in laser cutting, laser communication, laser marking.It is seldom to the application for handling amorphous oxide thin film transistor.
Invention content
In place of above shortcoming and defect of the existing technology, the purpose of the present invention is to provide a kind of laser treatments
The preparation method of amorphous oxide thin film transistor.
The object of the invention is achieved through the following technical solutions：
A kind of preparation method of laser treatment amorphous oxide thin film transistor, specific preparation process are as follows：
(1) magnetically controlled DC sputtering Al on the glass substrate:Then Nd films are carved as grid by exposure imaging and wet method
Erosion technology is graphical；
(2) in patterned Al:The anodic oxidation of Nd gate surfaces grows AlOx:Nd gate insulating layers；
(3) using rf magnetron sputtering on gate insulation layer deposited amorphous oxide semiconductor thin-film, it is non-as active layer
The thickness of amorphous oxide semiconductor film is 5~20nm；
(4) by the device obtained by step (3) in energy density ranging from 40~70mJ/cm2266nm all-solid state laser items
It is irradiated under part；
(5) using mask method, magnetically controlled DC sputtering prepares source/drain electrode on amorphous oxide semiconductor film, obtains institute
State amorphous oxide thin film transistor.
Preferably, Al described in step (1):The doping concentration of Nd is 0.5~5wt.%, Al:The thickness of Nd films is 100
~300nm.
Preferably, AlOx described in step (2):The thickness of Nd gate insulating layers is 50~200nm.
Preferably, amorphous oxide semiconductor described in step (3) refers to that amorphous mixes silicon tin oxide；The amorphous mixes silica
The doping concentration for changing tin is 1~10wt.%.
The method of the present invention has the following advantages that and advantageous effect：
The all solid state laser of the TFT devices use 266nm wavelength of the present invention is quickly handled, at Long Time Thermal annealing
Reason obtains device performance, effectively saves production cost.
Description of the drawings
Fig. 1 is the structure diagram of the amorphous oxide thin film transistor of the embodiment of the present invention.
Fig. 2 is in grid voltage V in embodiment 1 without laser irradiation processing gained amorphous oxide thin film transistorGSPoint
Output characteristic curve figure that Wei be under the conditions of 0V, 10V, 20V and 30V；Wherein, curve 21,22,23 and 24 is respectively grid voltage
VGSFor 0V, 10V, 20V and 30V.
Fig. 3 is to handle gained amorphous oxide thin film transistor in grid voltage V by laser irradiation in embodiment 1GSPoint
Output characteristic curve figure that Wei be under the conditions of 0V, 10V, 20V and 30V；Wherein, curve 31,32,33 and 34 is respectively grid voltage
VGSFor 0V, 10V, 20V and 30V.
Fig. 4 is in source/drain voltage V in embodiment 1 without laser irradiation processing gained amorphous oxide thin film transistorDSFor
The transfer characteristic curve figure of (channel width-over-length ratio W/L=300/300) under the conditions of 30.1V.
Fig. 5 is to handle gained amorphous oxide thin film transistor in source/drain voltage V by laser irradiation in embodiment 1DSFor
The transfer characteristic curve figure of (channel width-over-length ratio W/L=300/300) under the conditions of 30.1V.
Fig. 6 is absorptivity figure of the 266nm wavelength lasers in amorphous mixes silicon SnO 2 thin film in embodiment 1.
Fig. 7 is to handle gained amorphous oxide thin film transistor in grid voltage V by laser irradiation in embodiment 2GSPoint
Output characteristic curve figure that Wei be under the conditions of 0V, 10V, 20V and 30V.
Fig. 8 is to handle gained amorphous oxide thin film transistor in source/drain voltage V by laser irradiation in embodiment 2DSFor
The transfer characteristic curve figure of (channel width-over-length ratio W/L=300/300) under the conditions of 30.1V.
Fig. 9 is to handle gained amorphous oxide thin film transistor in grid voltage V by laser irradiation in embodiment 3GSPoint
Output characteristic curve figure that Wei be under the conditions of 0V, 10V, 20V and 30V.
Figure 10 is to handle gained amorphous oxide thin film transistor in source/drain voltage V by laser irradiation in embodiment 3DS
Transfer characteristic curve figure for (channel width-over-length ratio W/L=300/300) under the conditions of 30.1V.
Specific embodiment
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment 1
A kind of preparation method of laser treatment amorphous oxide thin film transistor of the present embodiment, the amorphous oxides are thin
The structure diagram of film transistor is as shown in Figure 1, substrate 11, grid 12, gate insulating layer 13, active layer 14 by stacking gradually
It is formed with source/drain electrode 15.The specific preparation process of the amorphous oxide thin film transistor is as follows：
(1) Al that magnetically controlled DC sputtering thickness is 100nm on the glass substrate:(doping of Nd is dense as grid for Nd films
Spend for 3wt.%), it is then graphical by exposure imaging and wet etching technique；
(2) in patterned Al:Nd gate surface anodic oxidations growth thickness is the AlOx of 50nm:Nd gate insulating layers；
(3) using rf magnetron sputtering on gate insulation layer deposited amorphous mix silicon tin oxide semiconductive thin film (silicon doping it is dense
Spend for 1wt.%), as active layer, the thickness that amorphous mixes silicon tin oxide semiconductive thin film is 5nm；
(4) by the device obtained by step (3) in energy density ranging from 60mJ/cm2266nm all-solid state lasers under the conditions of
It is irradiated；
(5) magnetically controlled DC sputtering on silicon tin oxide semiconductive thin film is mixed in amorphous using mask method and prepare source/drain electrode, obtain
To the amorphous oxide thin film transistor.
The present embodiment handles gained amorphous oxide thin film transistor in grid voltage V through laser irradiationGSRespectively 0V,
Output characteristic curve figure under the conditions of 10V, 20V and 30V is as shown in Figure 3.And without laser irradiation processing gained amorphous oxides
The output characteristic curve figure of thin film transistor (TFT) is as shown in Figure 2.
The present embodiment handles gained amorphous oxide thin film transistor in source/drain voltage V through laser irradiationDSFor 30.1V items
The transfer characteristic curve figure of (channel width-over-length ratio W/L=300/300) is as shown in Figure 5 under part.And without laser irradiation processing gained
The transfer characteristic curve figure of amorphous oxide thin film transistor is as shown in Figure 4.
Absorptivity of the 266nm wavelength lasers in amorphous mixes silicon SnO 2 thin film is as shown in Figure 6 in the present embodiment.
As can be seen from the above results, mixing silicon oxidation tinware part without the amorphous of laser treatment does not have device performance.With
It device to handle by suitable laser energy density, transfer characteristic curve occurs in device.Illustrate that amorphous is mixed silicon tin oxide and partly led
Body device can obtain device performance by laser treatment.
Embodiment 2
A kind of preparation method of laser treatment amorphous oxide thin film transistor of the present embodiment, the amorphous oxides are thin
The structure diagram of film transistor is as shown in Figure 1, substrate 11, grid 12, gate insulating layer 13, active layer 14 by stacking gradually
It is formed with source/drain electrode 15.The specific preparation process of the amorphous oxide thin film transistor is as follows：
(1) Al that magnetically controlled DC sputtering thickness is 200 on the glass substrate:Nd films are as the grid (doping concentration of Nd
For 4wt.%), it is then graphical by exposure imaging and wet etching technique；
(2) in patterned Al:Nd gate surface anodic oxidations growth thickness is the AlOx of 100nm:Nd gate insulating layers；
(3) using rf magnetron sputtering on gate insulation layer deposited amorphous mix silicon tin oxide semiconductive thin film (silicon doping it is dense
Spend for 3wt.%), as active layer, the thickness that amorphous mixes silicon tin oxide semiconductive thin film is 10nm；
(4) by the device obtained by step (3) in energy density ranging from 70mJ/cm2266nm all-solid state lasers under the conditions of
It is irradiated；
(5) magnetically controlled DC sputtering on silicon tin oxide semiconductive thin film is mixed in amorphous using mask method and prepare source/drain electrode, obtain
To the amorphous oxide thin film transistor.
The present embodiment handles gained amorphous oxide thin film transistor in grid voltage V through laser irradiationGSRespectively 0V,
Output characteristic curve figure under the conditions of 10V, 20V and 30V is as shown in Figure 7；In source/drain voltage VDSFor (ditch road width under the conditions of 30.1V
It is long than W/L=300/300) transfer characteristic curve figure it is as shown in Figure 8.
As can be seen from the above results, it is handled by suitable laser energy density, transfer characteristic curve occurs in device.It says
Bright amorphous, which mixes silicon tin oxide semiconductor devices, to obtain device performance by laser treatment.
Embodiment 3
A kind of preparation method of laser treatment amorphous oxide thin film transistor of the present embodiment, the amorphous oxides are thin
The structure diagram of film transistor is as shown in Figure 1, substrate 11, grid 12, gate insulating layer 13, active layer 14 by stacking gradually
It is formed with source/drain electrode 15.The specific preparation process of the amorphous oxide thin film transistor is as follows：
(1) Al that magnetically controlled DC sputtering thickness is 300nm on the glass substrate:(doping of Nd is dense as grid for Nd films
Spend for 5wt.%), it is then graphical by exposure imaging and wet etching technique；
(2) in patterned Al:Nd gate surface anodic oxidations growth thickness is the AlOx of 200nm:Nd gate insulating layers；
(3) using rf magnetron sputtering on gate insulation layer deposited amorphous mix silicon tin oxide semiconductive thin film (silicon doping it is dense
Spend for 10wt.%), as active layer, the thickness that amorphous mixes silicon tin oxide semiconductive thin film is 15nm；
(4) by the device obtained by step (3) in energy density ranging from 50mJ/cm2266nm all-solid state lasers under the conditions of
It is irradiated；
(5) magnetically controlled DC sputtering on silicon tin oxide semiconductive thin film is mixed in amorphous using mask method and prepare source/drain electrode, obtain
To the amorphous oxide thin film transistor.
The present embodiment handles gained amorphous oxide thin film transistor in grid voltage V through laser irradiationGSRespectively 0V,
Output characteristic curve figure under the conditions of 10V, 20V and 30V is as shown in Figure 9；In source/drain voltage VDSFor (ditch road width under the conditions of 30.1V
It is long than W/L=300/300) transfer characteristic curve figure it is as shown in Figure 10.
As can be seen from the above results, it is handled by suitable laser energy density, transfer characteristic curve occurs in device.It says
Bright amorphous, which mixes silicon tin oxide semiconductor devices, to obtain device performance by laser treatment.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (4)
1. a kind of preparation method of laser treatment amorphous oxide thin film transistor, it is characterised in that specific preparation process is as follows：
(1) magnetically controlled DC sputtering Al on the glass substrate:Then Nd films pass through exposure imaging and wet etching skill as grid
Art is graphical；
(2) in patterned Al:The anodic oxidation of Nd gate surfaces grows AlOx:Nd gate insulating layers；
(3) using rf magnetron sputtering on gate insulation layer deposited amorphous oxide semiconductor thin-film, as active layer, amorphous oxygen
The thickness of compound semiconductive thin film is 5~20nm；
(4) by the device obtained by step (3) in energy density ranging from 40~70mJ/cm2266nm all-solid state lasers under the conditions of
It is irradiated；
(5) using mask method, magnetically controlled DC sputtering prepares source/drain electrode on amorphous oxide semiconductor film, obtains described non-
Oxide thin film transistor.
2. a kind of preparation method of laser treatment amorphous oxide thin film transistor according to claim 1, feature exist
In：Al described in step (1):The doping concentration of Nd is 0.5~5wt.%, Al:The thickness of Nd films is 100~300nm.
3. a kind of preparation method of laser treatment amorphous oxide thin film transistor according to claim 1, feature exist
In：AlOx described in step (2):The thickness of Nd gate insulating layers is 50~200nm.
4. a kind of preparation method of laser treatment amorphous oxide thin film transistor according to claim 1, feature exist
In：Amorphous oxide semiconductor described in step (3) refers to that amorphous mixes silicon tin oxide；The doping that the amorphous mixes silicon tin oxide is dense
It spends for 1~10wt.%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711323516.XA CN108231905A (en) | 2017-12-13 | 2017-12-13 | A kind of preparation method of laser treatment amorphous oxide thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711323516.XA CN108231905A (en) | 2017-12-13 | 2017-12-13 | A kind of preparation method of laser treatment amorphous oxide thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108231905A true CN108231905A (en) | 2018-06-29 |
Family
ID=62652137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711323516.XA Pending CN108231905A (en) | 2017-12-13 | 2017-12-13 | A kind of preparation method of laser treatment amorphous oxide thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108231905A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411542A (en) * | 2018-09-10 | 2019-03-01 | 华南理工大学 | A kind of back channel-etch type amorphous oxide thin film transistor and preparation method thereof |
| CN109767973A (en) * | 2018-12-14 | 2019-05-17 | 华南理工大学 | A method of it is annealed using deep ultraviolet laser to oxide semiconductor thin-film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090261449A1 (en) * | 2008-03-26 | 2009-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and semiconductor device |
| CN107170833A (en) * | 2017-06-14 | 2017-09-15 | 华南理工大学 | A kind of amorphous oxide thin film transistor and preparation method thereof |
-
2017
- 2017-12-13 CN CN201711323516.XA patent/CN108231905A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090261449A1 (en) * | 2008-03-26 | 2009-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and semiconductor device |
| CN107170833A (en) * | 2017-06-14 | 2017-09-15 | 华南理工大学 | A kind of amorphous oxide thin film transistor and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411542A (en) * | 2018-09-10 | 2019-03-01 | 华南理工大学 | A kind of back channel-etch type amorphous oxide thin film transistor and preparation method thereof |
| CN109767973A (en) * | 2018-12-14 | 2019-05-17 | 华南理工大学 | A method of it is annealed using deep ultraviolet laser to oxide semiconductor thin-film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chiu et al. | High-Performance a-IGZO Thin-Film Transistor Using $\hbox {Ta} _ {2}\hbox {O} _ {5} $ Gate Dielectric | |
| JP5015473B2 (en) | Thin film transistor array and manufacturing method thereof | |
| TWI501403B (en) | A thin film transistor structure, and a thin film transistor and a display device having the same | |
| JP4982619B1 (en) | Manufacturing method of semiconductor element and manufacturing method of field effect transistor | |
| TW201308611A (en) | Thin-film transistor | |
| JP2010040552A (en) | Thin film transistor and manufacturing method thereof | |
| CN107146816A (en) | A kind of oxide semiconductor thin-film and thin film transistor (TFT) prepared therefrom | |
| CN107123671A (en) | Grade doping IGZO thin film transistor (TFT)s based on organic insulator and preparation method thereof | |
| CN104701328B (en) | A kind of array base palte and its manufacture method, display device | |
| Wu et al. | Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors | |
| CN108735821B (en) | Praseodymium-indium-zinc oxide thin film transistor and preparation method thereof | |
| CN110416087A (en) | Metal oxide thin-film transistor and preparation method thereof with passivation enhancement layer | |
| KR20100084966A (en) | Method for producing thin film transistor and method for producing electronic optical device | |
| CN108231905A (en) | A kind of preparation method of laser treatment amorphous oxide thin film transistor | |
| US20210265472A1 (en) | Vertical thin film transistor with single gate electrode with micro-perforations | |
| CN107104151A (en) | A kind of double grid electrode metal oxide thin-film transistor and preparation method thereof | |
| TW201405835A (en) | A method for fabricating a thin film transistor | |
| CN105304468B (en) | A kind of amorphous IGZO transparent oxide films of N2 processing and preparation method thereof | |
| CN107527946A (en) | Oxide semiconductor thin-film, oxide thin film transistor and preparation method thereof | |
| Thomas et al. | Be-doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in air | |
| Wang et al. | The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors | |
| CN109887991A (en) | A kind of lamination silicon doped stannum oxide thin film transistor (TFT) and preparation method thereof | |
| CN105185708B (en) | A kind of H2Amorphous IGZO transparent oxide films of processing and preparation method thereof | |
| CN102969364A (en) | Top gate structure metallic oxide thin film transistor for improving device uniformity and manufacture method thereof | |
| CN107731930A (en) | A kind of tin oxide base semiconductor thin-film transistor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180629 |