TW200504821A - Thin film transistor and its manufacturing method - Google Patents

Thin film transistor and its manufacturing method

Info

Publication number
TW200504821A
TW200504821A TW093120578A TW93120578A TW200504821A TW 200504821 A TW200504821 A TW 200504821A TW 093120578 A TW093120578 A TW 093120578A TW 93120578 A TW93120578 A TW 93120578A TW 200504821 A TW200504821 A TW 200504821A
Authority
TW
Taiwan
Prior art keywords
film
silicon
forming
bottom coating
substrate
Prior art date
Application number
TW093120578A
Other languages
Chinese (zh)
Other versions
TWI278007B (en
Inventor
Yuusuke Uchida
Hiroshi Teramoto
Kazuyuki Sugahara
Tooru Takeguchi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200504821A publication Critical patent/TW200504821A/en
Application granted granted Critical
Publication of TWI278007B publication Critical patent/TWI278007B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The present invention provides a manufacturing method of thin film transistor that has excellent operation characteristic and extremely lower defect level. The invention includes the followings: the step of forming a bottom coating layer, which is composed of silicon nitride film 2 and silicon oxide film 3, on the insulating substrate 1; the step of forming an amorphous silicon film 10 on the bottom coating layer; the step of forming an interface passivation film composed of the silicon oxide film 11 on the silicon film 10; the step of irradiating YAG laser onto the substrate where the interface passivation film has been formed to conduct laser annealing process onto the silicon film; the step of performing pattern process onto the silicon film 4, which has been undergone with the laser annealing process; and the step of forming gate insulation film, which is composed of silicon oxide film 5, on the substrate that has been undergone with the pattern process. The bottom coating film, the amorphous silicon film 10 and the interface passivation film are sequentially formed in the vacuum state where the vacuum state is maintained.
TW093120578A 2003-07-29 2004-07-09 Thin film transistor and its manufacturing method TWI278007B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003281420 2003-07-29
JP2004030664A JP2005064453A (en) 2003-07-29 2004-02-06 Thin film transistor and its manufacturing method

Publications (2)

Publication Number Publication Date
TW200504821A true TW200504821A (en) 2005-02-01
TWI278007B TWI278007B (en) 2007-04-01

Family

ID=34380152

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093120578A TWI278007B (en) 2003-07-29 2004-07-09 Thin film transistor and its manufacturing method

Country Status (4)

Country Link
JP (1) JP2005064453A (en)
KR (1) KR100661104B1 (en)
CN (1) CN100336189C (en)
TW (1) TWI278007B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
KR20060106170A (en) * 2005-04-06 2006-10-12 삼성전자주식회사 Method for making a poly crystalline silicon thin film and thin film transistor making method for having the same
JP5053610B2 (en) * 2006-09-29 2012-10-17 富士フイルム株式会社 Laser annealing method, semiconductor film, semiconductor device, and electro-optical device
JP5305630B2 (en) 2006-12-05 2013-10-02 キヤノン株式会社 Manufacturing method of bottom gate type thin film transistor and manufacturing method of display device
CN102064109B (en) * 2010-11-08 2013-05-29 友达光电股份有限公司 Thin film transistor and manufacturing method thereof
WO2012081474A1 (en) * 2010-12-14 2012-06-21 シャープ株式会社 Method for forming crystalline semiconductor film
CN104658898A (en) * 2013-11-22 2015-05-27 上海和辉光电有限公司 Method for manufacturing low-temperature polycrystalline silicon film
CN105655355A (en) * 2016-02-01 2016-06-08 武汉华星光电技术有限公司 Manufacturing method of array substrate
CN107170833A (en) * 2017-06-14 2017-09-15 华南理工大学 A kind of amorphous oxide thin film transistor and preparation method thereof
US11069724B2 (en) 2018-01-12 2021-07-20 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate, manufacturing method thereof and display device using the same
CN108288619A (en) * 2018-01-12 2018-07-17 武汉华星光电半导体显示技术有限公司 A kind of array substrate and preparation method thereof, display device
CN109585366A (en) * 2018-12-03 2019-04-05 武汉华星光电半导体显示技术有限公司 Low temperature polycrystalline silicon display panel manufacturing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04328872A (en) * 1991-04-26 1992-11-17 A G Technol Kk Manufacture of polycrystalline thin film transistor and polycrystalline thin film transistor
JP3897826B2 (en) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 Active matrix display device
JPH0897141A (en) * 1994-09-22 1996-04-12 A G Technol Kk Method of forming polycrystalline semiconductor layer, polycrystalline semiconductor tft, and beam annealing device
JPH0992618A (en) * 1995-09-25 1997-04-04 Toshiba Corp Production of polysilicon, thin film transistor and fabrication thereof, and liquid crystal display
JPH11354441A (en) * 1998-06-08 1999-12-24 Seiko Epson Corp Manufacture of semiconductor device
JP2000058847A (en) * 1998-07-31 2000-02-25 Semiconductor Energy Lab Co Ltd Semiconductor device with semiconductor circuit consisting of semiconductor element and manufacture thereof
JP2000260995A (en) * 1999-03-10 2000-09-22 Matsushita Electric Ind Co Ltd Manufacture of thin-film semiconductor device
JP3279280B2 (en) * 1999-04-15 2002-04-30 松下電器産業株式会社 Method for manufacturing thin film semiconductor device
JP2002093704A (en) * 2000-09-18 2002-03-29 Crystage Co Ltd Thin-film semiconductor device and its manufacturing apparatus
SG113399A1 (en) * 2000-12-27 2005-08-29 Semiconductor Energy Lab Laser annealing method and semiconductor device fabricating method
JP4901020B2 (en) * 2001-05-23 2012-03-21 東芝モバイルディスプレイ株式会社 Method for manufacturing polysilicon thin film transistor
JP2002353137A (en) * 2001-05-24 2002-12-06 Matsushita Electric Ind Co Ltd Method for fabricating thin film semiconductor element
JP3942853B2 (en) * 2001-08-28 2007-07-11 株式会社半導体エネルギー研究所 Semiconductor material manufacturing equipment

Also Published As

Publication number Publication date
JP2005064453A (en) 2005-03-10
CN100336189C (en) 2007-09-05
TWI278007B (en) 2007-04-01
CN1577773A (en) 2005-02-09
KR100661104B1 (en) 2006-12-26
KR20050013928A (en) 2005-02-05

Similar Documents

Publication Publication Date Title
TW200618120A (en) A microelectronic device and method of fabricating the same
JPH1083990A (en) Manufacturing method of semiconductor device
TW200605356A (en) Method for fabricating a thin film transistor and related circuits
TW200504821A (en) Thin film transistor and its manufacturing method
WO2008081724A1 (en) Method for forming insulating film and method for manufacturing semiconductor device
TW200639943A (en) Low temperature method for minimizing copper hillock defects
TW200642045A (en) Method of manufacturing flash memory device
WO2008081723A1 (en) Method for forming insulating film and method for manufacturing semiconductor device
TW200618298A (en) Fabrication method of thin film transistor
KR100695154B1 (en) Silicon thin film transistor and manufacturing method of gate insulator and the same adopting the method
KR100624427B1 (en) Fabrication method of poly crystalline Si and semiconductor device by the same
US6909154B2 (en) Sacrificial annealing layer for a semiconductor device and a method of fabrication
EP1610393A4 (en) Semiconductor device and method for manufacturing same
JP2005340827A (en) Polycrystalline silicon film structure and manufacturing method of the same, and mafanucturing method of tft using the same
GB2307790A (en) Method of removing defects from semiconductor devices.
TW527650B (en) Forming method of oxynitride layer
JPS6146069A (en) Manufacture of semiconductor device
KR100443793B1 (en) Method of manufacturing a semiconductor device
KR100267491B1 (en) Method for pre-treatment of silicon substrate
US6680244B2 (en) Method for manufacturing semiconductor device
TW200625451A (en) Method for fabricating semiconductor device
TW200516724A (en) Method of manufacturing flash memory devices
TWI509692B (en) Semiconductor device and method of fabricating the same
US20050208775A1 (en) Method for growing a gate oxide layer on a silicon surface with preliminary n2o anneal
TWI244141B (en) Method of manufacturing a semiconductor device for reducing resistance of a CoSi2 layer

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees