TWI277983B - Semiconductor memory device performing auto refresh in the self refresh mode - Google Patents

Semiconductor memory device performing auto refresh in the self refresh mode Download PDF

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Publication number
TWI277983B
TWI277983B TW94124644A TW94124644A TWI277983B TW I277983 B TWI277983 B TW I277983B TW 94124644 A TW94124644 A TW 94124644A TW 94124644 A TW94124644 A TW 94124644A TW I277983 B TWI277983 B TW I277983B
Authority
TW
Taiwan
Prior art keywords
memory
refresh
self
column
address
Prior art date
Application number
TW94124644A
Other languages
English (en)
Chinese (zh)
Other versions
TW200615971A (en
Inventor
Taek-Seon Park
Jung-Bae Lee
Yun-Sang Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/169,241 external-priority patent/US7164615B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200615971A publication Critical patent/TW200615971A/zh
Application granted granted Critical
Publication of TWI277983B publication Critical patent/TWI277983B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW94124644A 2004-07-21 2005-07-21 Semiconductor memory device performing auto refresh in the self refresh mode TWI277983B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20040056967 2004-07-21
US11/169,241 US7164615B2 (en) 2004-07-21 2005-06-27 Semiconductor memory device performing auto refresh in the self refresh mode

Publications (2)

Publication Number Publication Date
TW200615971A TW200615971A (en) 2006-05-16
TWI277983B true TWI277983B (en) 2007-04-01

Family

ID=38626087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94124644A TWI277983B (en) 2004-07-21 2005-07-21 Semiconductor memory device performing auto refresh in the self refresh mode

Country Status (3)

Country Link
JP (1) JP4559318B2 (ja)
DE (1) DE102005035079B4 (ja)
TW (1) TWI277983B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723679B2 (ja) * 2009-01-14 2011-07-13 エルピーダメモリ株式会社 半導体記憶装置、メモリシステム、及び半導体記憶装置のリフレッシュ制御方法
US8471582B2 (en) 2009-01-27 2013-06-25 Qualcomm Incorporated Circuit for detecting tier-to-tier couplings in stacked integrated circuit devices
JP2012252742A (ja) * 2011-06-02 2012-12-20 Elpida Memory Inc 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5627791A (en) * 1996-02-16 1997-05-06 Micron Technology, Inc. Multiple bank memory with auto refresh to specified bank
KR100237621B1 (ko) * 1996-08-27 2000-01-15 김영환 반도체 메모리소자의 리프레시 제어회로
KR100276386B1 (ko) * 1997-12-06 2001-01-15 윤종용 반도체메모리장치의리프레시방법및회로
CN1137491C (zh) * 1998-03-30 2004-02-04 西门子公司 动态随机存取存储器中的译码自动刷新模式

Also Published As

Publication number Publication date
JP2006031929A (ja) 2006-02-02
DE102005035079B4 (de) 2014-03-13
DE102005035079A1 (de) 2006-02-16
TW200615971A (en) 2006-05-16
JP4559318B2 (ja) 2010-10-06

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