TWI268646B - Low resistance T-shaped ridge structure - Google Patents

Low resistance T-shaped ridge structure

Info

Publication number
TWI268646B
TWI268646B TW093125377A TW93125377A TWI268646B TW I268646 B TWI268646 B TW I268646B TW 093125377 A TW093125377 A TW 093125377A TW 93125377 A TW93125377 A TW 93125377A TW I268646 B TWI268646 B TW I268646B
Authority
TW
Taiwan
Prior art keywords
layer
low resistance
void
section
ridge structure
Prior art date
Application number
TW093125377A
Other languages
English (en)
Other versions
TW200515663A (en
Inventor
Peter Hanberg
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200515663A publication Critical patent/TW200515663A/zh
Application granted granted Critical
Publication of TWI268646B publication Critical patent/TWI268646B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
TW093125377A 2003-09-26 2004-08-23 Low resistance T-shaped ridge structure TWI268646B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/671,815 US7319076B2 (en) 2003-09-26 2003-09-26 Low resistance T-shaped ridge structure

Publications (2)

Publication Number Publication Date
TW200515663A TW200515663A (en) 2005-05-01
TWI268646B true TWI268646B (en) 2006-12-11

Family

ID=34376193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125377A TWI268646B (en) 2003-09-26 2004-08-23 Low resistance T-shaped ridge structure

Country Status (4)

Country Link
US (1) US7319076B2 (zh)
CN (1) CN1606139B (zh)
TW (1) TWI268646B (zh)
WO (1) WO2005031828A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI671967B (zh) * 2018-04-02 2019-09-11 日商三菱電機股份有限公司 半導體光元件、半導體光積體元件及半導體光元件的製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7700936B2 (en) * 2005-07-01 2010-04-20 University Of Delaware Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice
US7656002B1 (en) * 2007-11-30 2010-02-02 Rf Micro Devices, Inc. Integrated bipolar transistor and field effect transistor
US7907811B2 (en) * 2008-05-06 2011-03-15 Hewlett-Packard Development Company, L.P. Optical waveguides and methods of making the same
MY151464A (en) * 2010-12-09 2014-05-30 Mimos Berhad A method of fabricating a semiconductor device
EP2731212B1 (en) * 2011-07-05 2022-12-07 Nichia Corporation Semiconductor laser element
WO2018109857A1 (ja) * 2016-12-14 2018-06-21 三菱電機株式会社 光半導体装置の製造方法
WO2020250291A1 (ja) * 2019-06-11 2020-12-17 三菱電機株式会社 半導体光集積素子および半導体光集積素子の製造方法
CN114007292B (zh) * 2021-11-12 2022-10-04 四川大学 一种微波加热薄膜装置及系统
WO2024084708A1 (ja) * 2022-10-21 2024-04-25 日本電信電話株式会社 半導体光導波路及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2542921A1 (fr) 1983-03-18 1984-09-21 Thomson Csf Procede de realisation d'une structure metallique de dimensions submicroniques
JPS6083378A (ja) * 1983-10-14 1985-05-11 Nec Corp 半導体装置の製造方法
JP2655414B2 (ja) * 1988-03-25 1997-09-17 日本電気株式会社 砒化ガリウム電界効果型トランジスタの製造方法
JPH04329644A (ja) * 1991-04-30 1992-11-18 Nec Corp ゲート電極の形成方法
US5889913A (en) 1995-03-15 1999-03-30 Kabushiki Kaisha Toshiba Optical semiconductor device and method of fabricating the same
JPH10199896A (ja) 1997-01-07 1998-07-31 Fujitsu Ltd 半導体装置の製造方法および半導体装置
US6121102A (en) * 1997-03-18 2000-09-19 Telfonaktiebolaget Lm Ericsson Method of electrical connection through an isolation trench to form trench-isolated bipolar devices
JP4120748B2 (ja) 2000-08-25 2008-07-16 日本電気株式会社 ゲート電極の製造方法及びゲート電極構造
KR200274179Y1 (ko) 2002-01-11 2002-05-06 이광호 진동모터가 내장된 쿠션체
RU2216818C1 (ru) * 2003-01-28 2003-11-20 Общество с ограниченной ответственностью "ЭпиЛаб" Эцр-плазменный источник для обработки полупроводниковых структур, способ обработки полупроводниковых структур, способ изготовления полупроводниковых приборов и интегральных схем (варианты), полупроводниковый прибор или интегральная схема (варианты)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI671967B (zh) * 2018-04-02 2019-09-11 日商三菱電機股份有限公司 半導體光元件、半導體光積體元件及半導體光元件的製造方法

Also Published As

Publication number Publication date
TW200515663A (en) 2005-05-01
CN1606139B (zh) 2010-05-26
US20050070113A1 (en) 2005-03-31
WO2005031828A3 (en) 2005-05-26
CN1606139A (zh) 2005-04-13
WO2005031828A2 (en) 2005-04-07
US7319076B2 (en) 2008-01-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees