TWI268564B - Semiconductor device and fabrication method thereof - Google Patents

Semiconductor device and fabrication method thereof

Info

Publication number
TWI268564B
TWI268564B TW094111288A TW94111288A TWI268564B TW I268564 B TWI268564 B TW I268564B TW 094111288 A TW094111288 A TW 094111288A TW 94111288 A TW94111288 A TW 94111288A TW I268564 B TWI268564 B TW I268564B
Authority
TW
Taiwan
Prior art keywords
metallic
dielectric layer
layer
redistribution
opening
Prior art date
Application number
TW094111288A
Other languages
English (en)
Other versions
TW200636885A (en
Inventor
Yi-Hsin Chen
Feng-Lung Chien
Chao-Dung Suo
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Priority to TW094111288A priority Critical patent/TWI268564B/zh
Priority to US11/373,693 priority patent/US7489037B2/en
Publication of TW200636885A publication Critical patent/TW200636885A/zh
Application granted granted Critical
Publication of TWI268564B publication Critical patent/TWI268564B/zh

Links

Classifications

    • H10W72/20
    • H10W72/012
    • H10W74/129
    • H10W70/05
    • H10W70/60
    • H10W70/65
    • H10W70/652
    • H10W72/019
    • H10W72/242
    • H10W72/244
    • H10W72/251
    • H10W72/252
    • H10W72/29
    • H10W72/9223
    • H10W72/923
    • H10W72/942
    • H10W72/952

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094111288A 2005-04-11 2005-04-11 Semiconductor device and fabrication method thereof TWI268564B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094111288A TWI268564B (en) 2005-04-11 2005-04-11 Semiconductor device and fabrication method thereof
US11/373,693 US7489037B2 (en) 2005-04-11 2006-03-10 Semiconductor device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094111288A TWI268564B (en) 2005-04-11 2005-04-11 Semiconductor device and fabrication method thereof

Publications (2)

Publication Number Publication Date
TW200636885A TW200636885A (en) 2006-10-16
TWI268564B true TWI268564B (en) 2006-12-11

Family

ID=37082423

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111288A TWI268564B (en) 2005-04-11 2005-04-11 Semiconductor device and fabrication method thereof

Country Status (2)

Country Link
US (1) US7489037B2 (zh)
TW (1) TWI268564B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547969B2 (en) 2004-10-29 2009-06-16 Megica Corporation Semiconductor chip with passivation layer comprising metal interconnect and contact pads
KR100642643B1 (ko) * 2005-03-18 2006-11-10 삼성전자주식회사 내부회로의 전원/접지선들과 직접 접속되는 재배치된전원/접지선들을 갖는 반도체 칩들 및 그 제조방법들
US7397121B2 (en) * 2005-10-28 2008-07-08 Megica Corporation Semiconductor chip with post-passivation scheme formed over passivation layer
US8796868B1 (en) * 2007-01-30 2014-08-05 Marvell International Ltd. Semiconductor layout
TWI353644B (en) * 2007-04-25 2011-12-01 Ind Tech Res Inst Wafer level packaging structure
KR100896883B1 (ko) * 2007-08-16 2009-05-14 주식회사 동부하이텍 반도체칩, 이의 제조방법 및 이를 가지는 적층 패키지
US20090174618A1 (en) * 2008-01-09 2009-07-09 Huang Chung-Er RF module integrated with active antenna
US7977783B1 (en) * 2009-08-27 2011-07-12 Amkor Technology, Inc. Wafer level chip size package having redistribution layers
US8304867B2 (en) * 2010-11-01 2012-11-06 Texas Instruments Incorporated Crack arrest vias for IC devices
TWI459527B (zh) * 2010-12-01 2014-11-01 矽品精密工業股份有限公司 半導體元件用基板結構之製法
US9601434B2 (en) 2010-12-10 2017-03-21 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming openings through insulating layer over encapsulant for enhanced adhesion of interconnect structure
TWI463621B (zh) * 2011-11-04 2014-12-01 矽品精密工業股份有限公司 封裝基板結構及其製法
TWI497669B (zh) * 2012-03-22 2015-08-21 矽品精密工業股份有限公司 形成於半導體基板上之導電凸塊及其製法
US9355978B2 (en) * 2013-03-11 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging devices and methods of manufacture thereof
US10325853B2 (en) * 2014-12-03 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor packages having through package vias
CN107452634B (zh) * 2016-05-17 2021-03-09 台湾积体电路制造股份有限公司 封装件结构及其形成方法
KR102628861B1 (ko) 2016-09-13 2024-01-25 삼성전자주식회사 반도체 패키지 및 재배선 패턴 형성 방법
US10818627B2 (en) * 2017-08-29 2020-10-27 Advanced Semiconductor Engineering, Inc. Electronic component including a conductive pillar and method of manufacturing the same
US10957672B2 (en) * 2017-11-13 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of manufacturing the same
CN110265304B (zh) * 2018-03-12 2021-05-07 中芯国际集成电路制造(天津)有限公司 重布线层的制造方法、封装方法及半导体结构
US11600590B2 (en) * 2019-03-22 2023-03-07 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor package
KR102815754B1 (ko) * 2020-10-27 2025-06-05 삼성전자주식회사 반도체 패키지
CN113990759B (zh) * 2020-12-21 2025-07-22 矽磐微电子(重庆)有限公司 半导体封装方法及半导体封装结构
TWI885747B (zh) * 2024-02-20 2025-06-01 矽品精密工業股份有限公司 導電凸塊結構及其製法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110799A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
JP4260405B2 (ja) * 2002-02-08 2009-04-30 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
TW543125B (en) 2002-05-15 2003-07-21 Advanced Chip Eng Tech Inc Fan-out type wafer level package and the method of the same
TWI223882B (en) * 2003-06-30 2004-11-11 Advanced Semiconductor Eng Bumping process
TWI225280B (en) * 2003-06-30 2004-12-11 Advanced Semiconductor Eng Bumping process
US7122458B2 (en) * 2004-07-22 2006-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating pad redistribution layer
TWI239594B (en) * 2004-10-06 2005-09-11 Advanced Semiconductor Eng Redistribution layer structure of a wafer and the fabrication method thereof

Also Published As

Publication number Publication date
TW200636885A (en) 2006-10-16
US20060226542A1 (en) 2006-10-12
US7489037B2 (en) 2009-02-10

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