TWI265383B - Lithographic apparatus, device manufacturing method and variable attenuator - Google Patents
Lithographic apparatus, device manufacturing method and variable attenuatorInfo
- Publication number
- TWI265383B TWI265383B TW094108209A TW94108209A TWI265383B TW I265383 B TWI265383 B TW I265383B TW 094108209 A TW094108209 A TW 094108209A TW 94108209 A TW94108209 A TW 94108209A TW I265383 B TWI265383 B TW I265383B
- Authority
- TW
- Taiwan
- Prior art keywords
- mirrors
- intensity
- projection
- radiation
- variable attenuator
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/805,526 US7145640B2 (en) | 2004-03-22 | 2004-03-22 | Lithographic apparatus, device manufacturing method and variable attenuator |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200600977A TW200600977A (en) | 2006-01-01 |
TWI265383B true TWI265383B (en) | 2006-11-01 |
Family
ID=34862015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094108209A TWI265383B (en) | 2004-03-22 | 2005-03-17 | Lithographic apparatus, device manufacturing method and variable attenuator |
Country Status (8)
Country | Link |
---|---|
US (1) | US7145640B2 (zh) |
EP (1) | EP1580603B1 (zh) |
JP (1) | JP4313328B2 (zh) |
KR (1) | KR100714469B1 (zh) |
CN (1) | CN100498537C (zh) |
DE (1) | DE602005022957D1 (zh) |
SG (1) | SG115769A1 (zh) |
TW (1) | TWI265383B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100674959B1 (ko) * | 2005-02-23 | 2007-01-26 | 삼성전자주식회사 | 비축상 프로젝션 광학계 및 이를 적용한 극자외선 리소그래피 장치 |
US7532308B2 (en) * | 2005-09-13 | 2009-05-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7683300B2 (en) * | 2006-10-17 | 2010-03-23 | Asml Netherlands B.V. | Using an interferometer as a high speed variable attenuator |
US8116342B2 (en) * | 2007-03-26 | 2012-02-14 | Nikon Corporation | Variable attenuator device and method |
US9151881B2 (en) * | 2012-11-12 | 2015-10-06 | Kla-Tencor Corporation | Phase grating for mask inspection system |
WO2014202585A2 (en) | 2013-06-18 | 2014-12-24 | Asml Netherlands B.V. | Lithographic method |
KR102275466B1 (ko) * | 2013-09-25 | 2021-07-13 | 에이에스엠엘 네델란즈 비.브이. | 빔 전달 장치 및 방법 |
JP6388200B2 (ja) * | 2013-12-13 | 2018-09-12 | 大日本印刷株式会社 | 照明装置、投射装置、光学素子及び、光学モジュール |
US9575412B2 (en) | 2014-03-31 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing pole imbalance by adjusting exposure intensity |
CN107430348B (zh) * | 2015-03-02 | 2021-09-24 | Asml荷兰有限公司 | 辐射系统 |
CN105159080B (zh) * | 2015-08-31 | 2017-10-24 | 武汉光迅科技股份有限公司 | 基于自动标定和智能学习的可调光衰减器控制方法及系统 |
CN108027567B (zh) * | 2015-09-03 | 2020-12-01 | Asml荷兰有限公司 | 衰减设备和方法 |
CN105842831B (zh) * | 2016-04-24 | 2018-05-11 | 湖南戴斯光电有限公司 | 测量高功率激光聚焦光斑强度分布的衰减装置 |
WO2020141050A1 (en) * | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Position metrology apparatus and associated optical elements |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4192573A (en) * | 1977-02-14 | 1980-03-11 | The United States Of America As Represented By The Secretary Of The Navy | Variable power attenuator for light beams |
US4778263A (en) * | 1987-05-29 | 1988-10-18 | The United States Of America As Respresented By The Department Of Energy | Variable laser attenuator |
JPH05251310A (ja) | 1992-03-06 | 1993-09-28 | Nikon Corp | 露光制御装置 |
NL1008352C2 (nl) | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
JP2000277421A (ja) * | 1999-03-26 | 2000-10-06 | Nikon Corp | 照明装置 |
US6630984B2 (en) * | 2000-08-03 | 2003-10-07 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US20020136939A1 (en) | 2001-02-15 | 2002-09-26 | Grieve M. James | Fuel cell and battery voltage controlling method and system |
KR100551209B1 (ko) | 2001-09-07 | 2006-02-14 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스 제조방법 |
US6577379B1 (en) * | 2001-11-05 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate |
TWI242690B (en) * | 2002-08-15 | 2005-11-01 | Asml Netherlands Bv | Reflector assembly, lithographic projection apparatus, radiation system with the reflector assembly, and method of manufacturing an integrated structure by a lithographic process |
US7016014B2 (en) * | 2004-02-27 | 2006-03-21 | Asml Netherlands B.V | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-03-22 US US10/805,526 patent/US7145640B2/en not_active Expired - Fee Related
-
2005
- 2005-03-17 SG SG200501615A patent/SG115769A1/en unknown
- 2005-03-17 TW TW094108209A patent/TWI265383B/zh not_active IP Right Cessation
- 2005-03-18 JP JP2005079763A patent/JP4313328B2/ja not_active Expired - Fee Related
- 2005-03-21 KR KR1020050023119A patent/KR100714469B1/ko not_active IP Right Cessation
- 2005-03-21 DE DE602005022957T patent/DE602005022957D1/de active Active
- 2005-03-21 EP EP05102250A patent/EP1580603B1/en not_active Not-in-force
- 2005-03-21 CN CNB2005100655292A patent/CN100498537C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7145640B2 (en) | 2006-12-05 |
EP1580603A2 (en) | 2005-09-28 |
SG115769A1 (en) | 2005-10-28 |
JP2005277414A (ja) | 2005-10-06 |
KR20060044471A (ko) | 2006-05-16 |
CN100498537C (zh) | 2009-06-10 |
CN1673875A (zh) | 2005-09-28 |
EP1580603B1 (en) | 2010-08-18 |
JP4313328B2 (ja) | 2009-08-12 |
KR100714469B1 (ko) | 2007-05-04 |
US20050206869A1 (en) | 2005-09-22 |
DE602005022957D1 (de) | 2010-09-30 |
EP1580603A3 (en) | 2006-02-01 |
TW200600977A (en) | 2006-01-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |