TWI264132B - Nitride semiconductor device with reduced polarization fields - Google Patents
Nitride semiconductor device with reduced polarization fieldsInfo
- Publication number
- TWI264132B TWI264132B TW091133134A TW91133134A TWI264132B TW I264132 B TWI264132 B TW I264132B TW 091133134 A TW091133134 A TW 091133134A TW 91133134 A TW91133134 A TW 91133134A TW I264132 B TWI264132 B TW I264132B
- Authority
- TW
- Taiwan
- Prior art keywords
- quantum well
- piezoelectric
- magnitude
- well layer
- electric field
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000004767 nitrides Chemical class 0.000 title 1
- 230000010287 polarization Effects 0.000 title 1
- 230000002269 spontaneous effect Effects 0.000 abstract 5
- 230000005684 electric field Effects 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/992,192 US6849472B2 (en) | 1997-09-30 | 2001-11-13 | Nitride semiconductor device with reduced polarization fields |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200306017A TW200306017A (en) | 2003-11-01 |
TWI264132B true TWI264132B (en) | 2006-10-11 |
Family
ID=25538024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091133134A TWI264132B (en) | 2001-11-13 | 2002-11-12 | Nitride semiconductor device with reduced polarization fields |
Country Status (4)
Country | Link |
---|---|
US (1) | US6849472B2 (zh) |
JP (1) | JP2003158297A (zh) |
DE (1) | DE10253082A1 (zh) |
TW (1) | TWI264132B (zh) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888867B2 (en) * | 2001-08-08 | 2005-05-03 | Nobuhiko Sawaki | Semiconductor laser device and fabrication method thereof |
US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
KR100992960B1 (ko) * | 2002-04-15 | 2010-11-09 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 유기금속 화학기상 증착법에 의해 성장된 무극성 α면질화갈륨 박막 |
AU2003293497A1 (en) | 2003-04-15 | 2005-07-21 | Japan Science And Technology Agency | Non-polar (a1,b,in,ga)n quantum wells |
US6943381B2 (en) * | 2004-01-30 | 2005-09-13 | Lumileds Lighting U.S., Llc | III-nitride light-emitting devices with improved high-current efficiency |
US7408201B2 (en) * | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
JP2005340765A (ja) * | 2004-04-30 | 2005-12-08 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
US7846757B2 (en) * | 2005-06-01 | 2010-12-07 | The Regents Of The University Of California | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices |
US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
JP4513446B2 (ja) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | 半導体結晶の結晶成長方法 |
FI118196B (fi) * | 2005-07-01 | 2007-08-15 | Optogan Oy | Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä |
JP4189386B2 (ja) * | 2005-01-27 | 2008-12-03 | ローム株式会社 | 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法 |
US7221000B2 (en) * | 2005-02-18 | 2007-05-22 | Philips Lumileds Lighting Company, Llc | Reverse polarization light emitting region for a semiconductor light emitting device |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7804100B2 (en) * | 2005-03-14 | 2010-09-28 | Philips Lumileds Lighting Company, Llc | Polarization-reversed III-nitride light emitting device |
TWI377602B (en) | 2005-05-31 | 2012-11-21 | Japan Science & Tech Agency | Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) |
US8278128B2 (en) * | 2008-02-01 | 2012-10-02 | The Regents Of The University Of California | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut |
EP1935014A4 (en) * | 2005-09-09 | 2010-09-08 | Univ California | PROCESS FOR IMPROVING THE FORMATION OF SEMI-POLAR (AL, IN, GA, B) N FILM BY ORGANOMETALLIC VAPOR CHEMICAL DEPOSITION |
US7951617B2 (en) * | 2005-10-06 | 2011-05-31 | Showa Denko K.K. | Group III nitride semiconductor stacked structure and production method thereof |
WO2007095137A2 (en) * | 2006-02-10 | 2007-08-23 | The Regents Of The University Of California | Method for conductivity control of (al,in,ga,b)n |
KR20070117238A (ko) * | 2006-06-08 | 2007-12-12 | 삼성전기주식회사 | 반도체 발광 트랜지스터 |
JP4984119B2 (ja) * | 2006-08-28 | 2012-07-25 | スタンレー電気株式会社 | 窒化物半導体結晶ないしそれを用いた発光素子及びその製造方法 |
JP2010509177A (ja) * | 2006-11-15 | 2010-03-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機金属化学気相成長法による、高品質のN面GaN、InNおよびAlNならびにそれらの合金のヘテロエピタキシャル成長の方法 |
US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
JP2008130606A (ja) * | 2006-11-16 | 2008-06-05 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、光源セルユニット、バックライト、照明装置、ディスプレイ、電子機器、半導体素子および半導体素子の製造方法 |
JP2010512660A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 無極性および半極性の発光デバイス |
JP5363996B2 (ja) * | 2007-02-12 | 2013-12-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Al(x)Ga(1−x)Nクラッディングフリー非極性III族窒化物ベースのレーザダイオードおよび発光ダイオード |
JP5050574B2 (ja) * | 2007-03-05 | 2012-10-17 | 住友電気工業株式会社 | Iii族窒化物系半導体発光素子 |
JP4462289B2 (ja) * | 2007-05-18 | 2010-05-12 | ソニー株式会社 | 半導体層の成長方法および半導体発光素子の製造方法 |
US20090039356A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
KR100889956B1 (ko) * | 2007-09-27 | 2009-03-20 | 서울옵토디바이스주식회사 | 교류용 발광다이오드 |
JP2009170798A (ja) * | 2008-01-18 | 2009-07-30 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体レーザ |
JP5003527B2 (ja) | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Iii族窒化物発光素子、及びiii族窒化物系半導体発光素子を作製する方法 |
US20090238227A1 (en) * | 2008-03-05 | 2009-09-24 | Rohm Co., Ltd. | Semiconductor light emitting device |
US7956369B2 (en) * | 2008-05-07 | 2011-06-07 | The United States Of America As Represented By The Secretary Of The Army | Light emitting diode |
JP4572963B2 (ja) * | 2008-07-09 | 2010-11-04 | 住友電気工業株式会社 | Iii族窒化物系半導体発光素子、及びエピタキシャルウエハ |
JP4475358B1 (ja) * | 2008-08-04 | 2010-06-09 | 住友電気工業株式会社 | GaN系半導体光素子、GaN系半導体光素子を作製する方法、及びエピタキシャルウエハ |
KR101142672B1 (ko) * | 2008-09-11 | 2012-05-11 | 스미토모덴키고교가부시키가이샤 | 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법 |
JP5316276B2 (ja) * | 2009-01-23 | 2013-10-16 | 住友電気工業株式会社 | 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法 |
JP5265404B2 (ja) * | 2009-02-04 | 2013-08-14 | パナソニック株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP2010205835A (ja) | 2009-03-02 | 2010-09-16 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体光素子、窒化ガリウム系半導体光素子を製造する方法、及びエピタキシャルウエハ |
WO2010141943A1 (en) * | 2009-06-05 | 2010-12-09 | The Regents Of The University Of California | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
JP5446622B2 (ja) | 2009-06-29 | 2014-03-19 | 住友電気工業株式会社 | Iii族窒化物結晶およびその製造方法 |
JP4835741B2 (ja) * | 2009-09-30 | 2011-12-14 | 住友電気工業株式会社 | 半導体発光素子を作製する方法 |
KR101854419B1 (ko) | 2010-03-04 | 2018-05-03 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | c-방향으로 +/-15도 미만의 미스컷들을 갖는 m-면 기판들 위의 준극성 Ⅲ―질화물 광전자 소자들 |
TWI416762B (zh) * | 2010-08-23 | 2013-11-21 | Univ Nat Sun Yat Sen | 同質異相量子井 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN102496665A (zh) * | 2011-12-14 | 2012-06-13 | 中微光电子(潍坊)有限公司 | 硅衬底GaN基LED结构及其制作方法 |
JP5948698B2 (ja) * | 2012-04-13 | 2016-07-06 | パナソニックIpマネジメント株式会社 | 紫外発光素子およびその製造方法 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
CN114023853A (zh) * | 2021-11-05 | 2022-02-08 | 聚灿光电科技(宿迁)有限公司 | 一种led及其制备方法 |
CN115863505A (zh) * | 2023-02-27 | 2023-03-28 | 北京大学 | 一种具有三维结构的氮化物发光二极管及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952792A (en) * | 1989-10-13 | 1990-08-28 | At&T Bell Laboratories | Devices employing internally strained asymmetric quantum wells |
JPH088214B2 (ja) * | 1990-01-19 | 1996-01-29 | 三菱電機株式会社 | 半導体装置 |
CA2120610C (en) * | 1992-08-07 | 1999-03-02 | Hideaki Imai | Nitride based semiconductor device and manufacture thereof |
JP3461893B2 (ja) * | 1994-02-21 | 2003-10-27 | 富士通株式会社 | 光半導体装置 |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5661074A (en) | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JP3599896B2 (ja) * | 1995-05-19 | 2004-12-08 | 三洋電機株式会社 | 半導体レーザ素子および半導体レーザ素子の製造方法 |
JPH08316582A (ja) | 1995-05-19 | 1996-11-29 | Nec Corp | 半導体レーザ |
US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
KR19980079320A (ko) * | 1997-03-24 | 1998-11-25 | 기다오까다까시 | 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스 |
JP3955367B2 (ja) | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
US6515313B1 (en) | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
US6355497B1 (en) * | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
JP5145617B2 (ja) | 2000-07-03 | 2013-02-20 | 日亜化学工業株式会社 | n型窒化物半導体積層体およびそれを用いる半導体素子 |
-
2001
- 2001-11-13 US US09/992,192 patent/US6849472B2/en not_active Expired - Lifetime
-
2002
- 2002-11-12 TW TW091133134A patent/TWI264132B/zh not_active IP Right Cessation
- 2002-11-13 JP JP2002329082A patent/JP2003158297A/ja active Pending
- 2002-11-13 DE DE10253082A patent/DE10253082A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE10253082A1 (de) | 2003-05-28 |
US20020084467A1 (en) | 2002-07-04 |
TW200306017A (en) | 2003-11-01 |
JP2003158297A (ja) | 2003-05-30 |
US6849472B2 (en) | 2005-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI264132B (en) | Nitride semiconductor device with reduced polarization fields | |
TWI377697B (en) | Method for growing a nitride-based iii-v group compound semiconductor | |
WO2002097904A3 (en) | Group iii nitride based light emitting diode structures with a quantum well and superlattice | |
Peng et al. | Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth terfenol-D structures | |
TW200517532A (en) | A method of fabricating an epitaxially grown layer | |
DE602005020586D1 (de) | Iii-nitridverbindungs-halbleiter-lichtemissionsbauelement | |
TW200816523A (en) | Nitride-based light emitting device | |
TW200536149A (en) | III-Nitride light-emitting devices with improved high-current efficiency | |
GB2374459B (en) | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same | |
TW200834996A (en) | Non-polar and semi-polar light emitting devices | |
WO2008153130A1 (ja) | 窒化物半導体発光素子及び窒化物半導体の製造方法 | |
WO2002031890A3 (en) | OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME | |
CN104350651B (zh) | 氮化物半导体发光装置 | |
EP0905799A3 (en) | Optical semiconductor device and method of fabricating the same | |
EP1162670A3 (en) | White light emitting diode and method for fabricating the same | |
TW200636999A (en) | Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same | |
TW567620B (en) | Ultraviolet ray emitting element | |
CN102185056A (zh) | 提高电子注入效率的氮化镓基发光二极管 | |
TW200518198A (en) | Method for fabricating GaN-based nitride layer | |
Chang et al. | Cascaded GaN light-emitting diodes with hybrid tunnel junction layers | |
TW201244311A (en) | Optical semiconductor element | |
EP1400835A3 (en) | Semiconductor optical modulator and laser with such optical modulator | |
TW201438278A (zh) | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 | |
EP1383176A4 (en) | SEMICONDUCTOR LUMINESCENT ELEMENT CONTAINING GROUP III NITRIDE COMPOUND | |
JP2016517627A (ja) | InGaNを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |