TWI261147B - Positive resist composition - Google Patents

Positive resist composition Download PDF

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Publication number
TWI261147B
TWI261147B TW091116333A TW91116333A TWI261147B TW I261147 B TWI261147 B TW I261147B TW 091116333 A TW091116333 A TW 091116333A TW 91116333 A TW91116333 A TW 91116333A TW I261147 B TWI261147 B TW I261147B
Authority
TW
Taiwan
Prior art keywords
group
formula
repeating unit
methyl
photoresist composition
Prior art date
Application number
TW091116333A
Other languages
English (en)
Chinese (zh)
Inventor
Kenichiro Sato
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TWI261147B publication Critical patent/TWI261147B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW091116333A 2001-09-28 2002-07-23 Positive resist composition TWI261147B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001300944A JP4149153B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TWI261147B true TWI261147B (en) 2006-09-01

Family

ID=19121434

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091116333A TWI261147B (en) 2001-09-28 2002-07-23 Positive resist composition

Country Status (3)

Country Link
JP (1) JP4149153B2 (enrdf_load_stackoverflow)
KR (1) KR20030051197A (enrdf_load_stackoverflow)
TW (1) TWI261147B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424265B (zh) * 2007-07-18 2014-01-21 Tokyo Ohka Kogyo Co Ltd 新穎之化合物及其製造方法,酸產生劑,光阻組成物及光阻圖型之形成方法
TWI827629B (zh) * 2018-06-28 2024-01-01 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、圖案形成方法、電子器件的製造方法、樹脂

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3890989B2 (ja) 2002-01-25 2007-03-07 住友化学株式会社 レジスト組成物
CN1603957A (zh) * 2003-10-03 2005-04-06 住友化学工业株式会社 化学放大型正光刻胶组合物及其树脂
JP2005234015A (ja) * 2004-02-17 2005-09-02 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4622579B2 (ja) * 2004-04-23 2011-02-02 住友化学株式会社 化学増幅型ポジ型レジスト組成物及び(メタ)アクリル酸誘導体とその製法
KR100613851B1 (ko) * 2004-06-03 2006-08-18 윤미숙 네트워크 기반의 근막마사지를 이용한 성형 서비스 시스템및 그 방법
AU2007261034B2 (en) 2006-06-20 2012-09-13 Allergan, Inc. Therapeutic compounds
WO2008008701A2 (en) * 2006-07-10 2008-01-17 Allergan, Inc. Substituted cyclopentane derivatives as therapeutic agents
KR100904068B1 (ko) 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
JP5806800B2 (ja) 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
WO2012133352A1 (ja) * 2011-03-31 2012-10-04 Jsr株式会社 フォトレジスト組成物
JP5967082B2 (ja) * 2011-05-19 2016-08-10 Jsr株式会社 フォトレジスト組成物
JP5954332B2 (ja) * 2011-09-29 2016-07-20 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
WO2013047528A1 (ja) * 2011-09-30 2013-04-04 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP5783111B2 (ja) * 2012-03-29 2015-09-24 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP6019677B2 (ja) * 2012-04-02 2016-11-02 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
KR20140055050A (ko) * 2012-10-30 2014-05-09 제일모직주식회사 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
JP6131793B2 (ja) * 2013-09-09 2017-05-24 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
WO2016181722A1 (ja) * 2015-05-14 2016-11-17 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
US12282254B2 (en) 2021-09-30 2025-04-22 Dupont Electronic Materials International, Llc Photoresist compositions and pattern formation methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3546679B2 (ja) * 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3832780B2 (ja) * 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3989132B2 (ja) * 1999-06-04 2007-10-10 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424265B (zh) * 2007-07-18 2014-01-21 Tokyo Ohka Kogyo Co Ltd 新穎之化合物及其製造方法,酸產生劑,光阻組成物及光阻圖型之形成方法
TWI827629B (zh) * 2018-06-28 2024-01-01 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、圖案形成方法、電子器件的製造方法、樹脂

Also Published As

Publication number Publication date
JP2003107709A (ja) 2003-04-09
KR20030051197A (ko) 2003-06-25
JP4149153B2 (ja) 2008-09-10

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