JP4149153B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4149153B2
JP4149153B2 JP2001300944A JP2001300944A JP4149153B2 JP 4149153 B2 JP4149153 B2 JP 4149153B2 JP 2001300944 A JP2001300944 A JP 2001300944A JP 2001300944 A JP2001300944 A JP 2001300944A JP 4149153 B2 JP4149153 B2 JP 4149153B2
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JP
Japan
Prior art keywords
group
general formula
repeating unit
alkyl group
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001300944A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003107709A (ja
JP2003107709A5 (enrdf_load_stackoverflow
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001300944A priority Critical patent/JP4149153B2/ja
Priority to TW091116333A priority patent/TWI261147B/zh
Priority to KR1020020058670A priority patent/KR20030051197A/ko
Publication of JP2003107709A publication Critical patent/JP2003107709A/ja
Publication of JP2003107709A5 publication Critical patent/JP2003107709A5/ja
Application granted granted Critical
Publication of JP4149153B2 publication Critical patent/JP4149153B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2001300944A 2001-09-28 2001-09-28 ポジ型レジスト組成物 Expired - Fee Related JP4149153B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001300944A JP4149153B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物
TW091116333A TWI261147B (en) 2001-09-28 2002-07-23 Positive resist composition
KR1020020058670A KR20030051197A (ko) 2001-09-28 2002-09-27 포지티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001300944A JP4149153B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003107709A JP2003107709A (ja) 2003-04-09
JP2003107709A5 JP2003107709A5 (enrdf_load_stackoverflow) 2006-01-19
JP4149153B2 true JP4149153B2 (ja) 2008-09-10

Family

ID=19121434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001300944A Expired - Fee Related JP4149153B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Country Status (3)

Country Link
JP (1) JP4149153B2 (enrdf_load_stackoverflow)
KR (1) KR20030051197A (enrdf_load_stackoverflow)
TW (1) TWI261147B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8003680B2 (en) * 2006-07-10 2011-08-23 Allergan, Inc. Therapeutic compounds
US8338637B2 (en) 2006-06-20 2012-12-25 Allergan, Inc. Therapeutic compounds

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3890989B2 (ja) 2002-01-25 2007-03-07 住友化学株式会社 レジスト組成物
CN1603957A (zh) * 2003-10-03 2005-04-06 住友化学工业株式会社 化学放大型正光刻胶组合物及其树脂
JP2005234015A (ja) * 2004-02-17 2005-09-02 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4622579B2 (ja) * 2004-04-23 2011-02-02 住友化学株式会社 化学増幅型ポジ型レジスト組成物及び（メタ）アクリル酸誘導体とその製法
KR100613851B1 (ko) * 2004-06-03 2006-08-18 윤미숙 네트워크 기반의 근막마사지를 이용한 성형 서비스 시스템및 그 방법
JP5205027B2 (ja) * 2007-07-18 2013-06-05 東京応化工業株式会社 化合物の製造方法
KR100904068B1 (ko) 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
JP5806800B2 (ja) 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
WO2012133352A1 (ja) * 2011-03-31 2012-10-04 Jsr株式会社 フォトレジスト組成物
JP5967082B2 (ja) * 2011-05-19 2016-08-10 Jsr株式会社 フォトレジスト組成物
JP5954332B2 (ja) * 2011-09-29 2016-07-20 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
WO2013047528A1 (ja) * 2011-09-30 2013-04-04 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP5783111B2 (ja) * 2012-03-29 2015-09-24 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP6019677B2 (ja) * 2012-04-02 2016-11-02 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
KR20140055050A (ko) * 2012-10-30 2014-05-09 제일모직주식회사 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
JP6131793B2 (ja) * 2013-09-09 2017-05-24 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
WO2016181722A1 (ja) * 2015-05-14 2016-11-17 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
JP7101773B2 (ja) * 2018-06-28 2022-07-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、電子デバイスの製造方法、樹脂
US12282254B2 (en) 2021-09-30 2025-04-22 Dupont Electronic Materials International, Llc Photoresist compositions and pattern formation methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3546679B2 (ja) * 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3832780B2 (ja) * 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3989132B2 (ja) * 1999-06-04 2007-10-10 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338637B2 (en) 2006-06-20 2012-12-25 Allergan, Inc. Therapeutic compounds
US8003680B2 (en) * 2006-07-10 2011-08-23 Allergan, Inc. Therapeutic compounds

Also Published As

Publication number Publication date
JP2003107709A (ja) 2003-04-09
KR20030051197A (ko) 2003-06-25
TWI261147B (en) 2006-09-01

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