TWI255850B - Slurry for chemical mechanical polishing - Google Patents

Slurry for chemical mechanical polishing

Info

Publication number
TWI255850B
TWI255850B TW089128248A TW89128248A TWI255850B TW I255850 B TWI255850 B TW I255850B TW 089128248 A TW089128248 A TW 089128248A TW 89128248 A TW89128248 A TW 89128248A TW I255850 B TWI255850 B TW I255850B
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
slurry
tantalum
polishing
Prior art date
Application number
TW089128248A
Other languages
English (en)
Inventor
Yasuaki Tsuchiya
Tomoko Wake
Tetsuyuki Itakura
Shin Sakurai
Kenichi Aoyagi
Original Assignee
Nec Electronics Corp
Tokyo Magnetic Printing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp, Tokyo Magnetic Printing filed Critical Nec Electronics Corp
Application granted granted Critical
Publication of TWI255850B publication Critical patent/TWI255850B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW089128248A 1999-12-28 2000-12-28 Slurry for chemical mechanical polishing TWI255850B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37448699A JP2001187876A (ja) 1999-12-28 1999-12-28 化学的機械的研磨用スラリー

Publications (1)

Publication Number Publication Date
TWI255850B true TWI255850B (en) 2006-06-01

Family

ID=18503933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089128248A TWI255850B (en) 1999-12-28 2000-12-28 Slurry for chemical mechanical polishing

Country Status (4)

Country Link
US (1) US20010006224A1 (zh)
JP (1) JP2001187876A (zh)
KR (1) KR100402442B1 (zh)
TW (1) TWI255850B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3645129B2 (ja) * 1999-06-25 2005-05-11 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
WO2003008660A1 (en) * 2001-07-19 2003-01-30 Trikon Holdings Limited Depositing a tantalum film
KR100444307B1 (ko) * 2001-12-28 2004-08-16 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
KR20030063763A (ko) * 2002-01-24 2003-07-31 한국과학기술연구원 텅스텐 씨엠피용 슬러리
JP3749867B2 (ja) * 2002-03-08 2006-03-01 株式会社東芝 アルミニウム系金属用研磨液および半導体装置の製造方法
US7677956B2 (en) * 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100496501B1 (ko) * 2002-05-29 2005-06-22 동우 화인켐 주식회사 구리배선에서 탄탈 금속 또는 탄탈계 화합물로 된 확산방지재의 ｃｍｐ용 연마 슬러리 조성물
US7799200B1 (en) 2002-07-29 2010-09-21 Novellus Systems, Inc. Selective electrochemical accelerator removal
JP4010903B2 (ja) 2002-08-02 2007-11-21 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
KR100498814B1 (ko) * 2002-10-18 2005-07-01 주식회사 동진쎄미켐 텅스텐 막에 대한 연마 속도가 우수하고 안정성이 뛰어난화학-기계적 연마 슬러리 조성물
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
KR101072342B1 (ko) * 2003-06-30 2011-10-11 동우 화인켐 주식회사 구리의 화학적 기계적 연마를 위한 슬러리 조성물
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US8372757B2 (en) 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US8530359B2 (en) 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US20050090106A1 (en) * 2003-10-22 2005-04-28 Jinru Bian Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US8211193B2 (en) * 2005-09-26 2012-07-03 Fujifilm Planar Solutions, LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications
US7501346B2 (en) * 2006-07-21 2009-03-10 Cabot Microelectronics Corporation Gallium and chromium ions for oxide rate enhancement
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US8541310B2 (en) 2007-05-04 2013-09-24 Cabot Microelectronics Corporation CMP compositions containing a soluble peroxometalate complex and methods of use thereof
FR2929609B1 (fr) * 2008-04-07 2010-05-28 Seppic Sa Composition de depolissage de verre exempte d'ions ammonium et d'ions bifluorure
CN102484061B (zh) 2009-09-02 2015-08-19 诺发系统有限公司 降低的各向同性蚀刻剂材料消耗及废料产生
US8168540B1 (en) 2009-12-29 2012-05-01 Novellus Systems, Inc. Methods and apparatus for depositing copper on tungsten
MY165019A (en) * 2011-03-31 2018-02-28 Hoya Corp Method of manufacturing a glass substrate for a magnetic disk and method of manufacturing a magnetic disk
KR101955391B1 (ko) * 2012-07-16 2019-03-08 주식회사 동진쎄미켐 구리막, 실리콘막 및 실리콘산화막 연마 슬러리 조성물 및 연마 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
JP2000248264A (ja) * 1999-03-02 2000-09-12 Sumitomo Chem Co Ltd 研磨用組成物及びそれを用いてなる金属材料の研磨方法
JP2000248265A (ja) * 1999-03-02 2000-09-12 Sumitomo Chem Co Ltd 研磨用組成物及びそれを用いてなる金属材料の研磨方法
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP4657408B2 (ja) * 1999-10-13 2011-03-23 株式会社トクヤマ 金属膜用研磨剤
JP2001115146A (ja) * 1999-10-18 2001-04-24 Tokuyama Corp バリア膜用研磨剤
JP2001152134A (ja) * 1999-11-22 2001-06-05 Speedfam Co Ltd 酸化物単結晶ウェーハ用研磨用組成物及び酸化物単結晶ウェーハの研磨方法
JP2001223216A (ja) * 1999-12-01 2001-08-17 Tokuyama Corp 半導体装置の製造方法
JP4500429B2 (ja) * 1999-12-24 2010-07-14 株式会社トクヤマ バリア膜用研磨剤

Also Published As

Publication number Publication date
KR100402442B1 (ko) 2003-10-22
US20010006224A1 (en) 2001-07-05
KR20010062729A (ko) 2001-07-07
JP2001187876A (ja) 2001-07-10

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