TWI250708B - Optically pumped radiation-emitting semiconductor-device and its production method - Google Patents

Optically pumped radiation-emitting semiconductor-device and its production method Download PDF

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Publication number
TWI250708B
TWI250708B TW092124463A TW92124463A TWI250708B TW I250708 B TWI250708 B TW I250708B TW 092124463 A TW092124463 A TW 092124463A TW 92124463 A TW92124463 A TW 92124463A TW I250708 B TWI250708 B TW I250708B
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Taiwan
Prior art keywords
well structure
pump
radiation source
quantum
radiation
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TW092124463A
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English (en)
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TW200404395A (en
Inventor
Norbert Linder
Christian Karnutsch
Wolfgang Schmid
Johann Luft
Stephan Lutgen
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Osram Opto Semiconductors Gmbh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)

Description

1250708 子井結構（11)，其特徵爲： 在該泵輻射源（20)和該量子井結構（1 1)之間形成一 凹口（10)使該泵輻射（2)射入該量子井結構（Π)中。 21. 如申請專利範圍第2 0項之製造方法，其中在步驟d)中 生長半導體層以形成該泵輻射源（20)，其在橫向中在生 長區（19)中至少一部份是與該量子井結構（11) 一起生 長，且該凹口（10)藉由去除該生長區（19)之至少一部份 而形成。 22. 如申請專利範圍第20或21項之製造方法，其中該凹口（1〇) 藉由蝕刻，特別是濕式化學或乾式化學蝕刻而形成。 23. 如申請專利範圍第20或21項之製造方法，其中該凹口（1〇) 形成溝渠形式，特別是形成一蝕刻溝渠。 24. 如申請專利範圍第20或21項之製造方法，其中該凹口（1〇) 中以泵輻射可透過之材料塡入。 25. 如申請專利範圍第24項之製造方法，其中該凹口（1〇)中 以矽或半導體材料塡入。 26 —種光學泵送式半導體裝置之製造方法，其半導體本體 具有至少一泵輻射源（20)和一表面發射式量子井結構 (11)，該泵輻射源（20)和該量子井結構（11)以單石方式積 體化而成，該泵輻射源（20)產生泵輻射（2)以便對該量子· 并結構（11)進行光學栗送，其具有以下步驟： a) 製備一基板（1)， b) 在該基板（1)上以磊晶方式生長多個半導體層，且其 含有泵輻射源（20)， 1250708 c) 在該量子井結構（11)用之多個半導體層中形成開窗， d) 在該開窗中以磊晶方式生長該量子井結構U1)’使該 泵輻射源（20)鄰接於該量子井結構（1 1) ’其特徵爲： 在該泵輻射源（20)和該量子井結構（1 1)之間形成一 凹口（ 1 0)使該泵輻射（2)射入該量子井結構（1 1)中。 27. 如申請專利範圍第26項之製造方法，其中在步驟d)中 生長半導體層以形成該量子井結構（11)，其在橫向中在 生長區中至少一部份是與該泵輻射源（20)之層序列一起 生長，且該凹口（10)藉由去除該生長區（19)之至少一部份 而形成。 28. 如申請專利範圍第26或27項之製造方法，其中該凹口（1〇) 藉由蝕刻，特別是濕式化學或乾式化學蝕刻而形成。 29. 如申請專利範圍第26或27項之製造方法，其中該凹口（1〇) 形成溝渠形式，特別是形成一蝕刻溝渠。 30_如申請專利範圍第26或27項之製造方法，其中該凹口（1〇) 中以泵輻射可透過之材料塡入。 31.如申請專利範圍第3 0項之製造方法，其中該凹口（ 1 〇)中 以矽或半導體材料塡入。
TW092124463A 2002-09-05 2003-09-04 Optically pumped radiation-emitting semiconductor-device and its production method TWI250708B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10241192A DE10241192A1 (de) 2002-09-05 2002-09-05 Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung

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TW200404395A TW200404395A (en) 2004-03-16
TWI250708B true TWI250708B (en) 2006-03-01

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US (1) US7529284B2 (zh)
EP (1) EP1535376B1 (zh)
JP (1) JP2005537674A (zh)
CN (1) CN1682418A (zh)
DE (2) DE10241192A1 (zh)
TW (1) TWI250708B (zh)
WO (1) WO2004025796A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8351479B2 (en) 2006-04-13 2013-01-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor element

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DE10243545B4 (de) * 2002-09-19 2008-05-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US7209506B2 (en) * 2003-07-31 2007-04-24 Osram Opto Semiconductors Gmbh Optically pumped semiconductor device and method for producing it
DE102004050118A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung
KR100738527B1 (ko) * 2005-07-13 2007-07-11 삼성전자주식회사 광펌핑 반도체 레이저
DE102006010727B4 (de) * 2005-12-05 2019-10-24 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang
DE102006010728A1 (de) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung
DE102006011284A1 (de) 2006-02-28 2007-08-30 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung
JP4193867B2 (ja) * 2006-05-02 2008-12-10 ソニー株式会社 ＧａＮ系半導体レーザの製造方法
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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
CN1682418A (zh) 2005-10-12
TW200404395A (en) 2004-03-16
US20060104327A1 (en) 2006-05-18
US7529284B2 (en) 2009-05-05
DE50313373D1 (de) 2011-02-10
WO2004025796A2 (de) 2004-03-25
DE10241192A1 (de) 2004-03-11
WO2004025796A3 (de) 2004-09-16
EP1535376A2 (de) 2005-06-01
EP1535376B1 (de) 2010-12-29
JP2005537674A (ja) 2005-12-08

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