TWI244168B - Housing-body, optoelectronic component with such a housing-body and plastic housing-material - Google Patents

Housing-body, optoelectronic component with such a housing-body and plastic housing-material Download PDF

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Publication number
TWI244168B
TWI244168B TW93105284A TW93105284A TWI244168B TW I244168 B TWI244168 B TW I244168B TW 93105284 A TW93105284 A TW 93105284A TW 93105284 A TW93105284 A TW 93105284A TW I244168 B TWI244168 B TW I244168B
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Taiwan
Prior art keywords
particles
plastic
housing
scope
metal
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TW93105284A
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English (en)
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TW200423314A (en
Inventor
Gertrud Kraeuter
Markus Zeiler
Thomas Hoefer
Herbert Brunner
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Osram Opto Semiconductors Gmbh
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Priority claimed from DE10310844.0A external-priority patent/DE10310844B4/de
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200423314A publication Critical patent/TW200423314A/zh
Application granted granted Critical
Publication of TWI244168B publication Critical patent/TWI244168B/zh

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    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)

Description

1244168 玖、發明說明： 【發明所屬之技術領域】 本發明涉及一種依據申請專利圍第1項前言之殼體，具 有此種殼體之光電組件和製成該殻體所用之塑膠殻體材 料。
在電子工業中在應用於電性接觸區時，銀具有一種中心 地位。半導體工業中銀主要是用在塗層-和塡銀之導電箔等 形式中。就其應用而言，銀具備一系列之優點，例如，其 具有良好之可加工性，高的延展性，高的導電性和高的導 熱性且相對於同樣用在電子工業中之主要之貴重金屬（例 如，金和鈀）而言價格較低。 【先前技術】
但銀在與傳統中所用之塑料（例如，以玻璃纖維塡入之熱 塑性材料）相組合時會產生問題。銀主要是在其處於離子形 式時在該塑料中具有一種很高之可移動性。特別是在熱塑 性塑料中（但數量較小時亦可在硬塑性塑料中）銀可沿著場 線而移動至電場中。這樣會在殻體中造成一種不期望之對 該組件之功能有損害性之空乏區或使銀之濃度增加。 特別是在發出-及/或接收輻射之半導體組件中，通常都 存在一種塑膠殻體，其直接有意或無意地與金屬部份相接 觸，特別是與含銀-或塗銀之載體相接觸或與以銀塡入之導 電性黏合劑相接觸。因此存在以下之危險性：在施加電壓（其 在殼體中產生電場）時，銀由載體或由導電性黏合劑遷移至 塑料殼體中。該遷移現象繼續在該塑料殼體中進行。此種 1244168 遷移隨著時間之增加而使二個電性終端之間在塑料內部形 成一種導電之路徑，其會造成錯誤之電流，在最壞之情況 下可使二個電性終端之間形成電性上之短路。 若該塑料（例如，熱塑性塑料）以纖維（例如，玻璃纖維） 來作機械上之強化，則特別會產生以下之問題：金屬離子 會大量地沿著纖維漫遊且因此使該遷移現象加速。
但該遷移現象（其在銀中特別明顯）亦會在較小之範圍中 存在於其它金屬（例如，銅和鎳）中。此外，另存在著導電 性黏合劑，其以已塗銀之銅球來設定，銀遷移之基本問題 因此會由於銀之較小之總數量而變小，但仍然存在。 (特別是玻璃纖維強化之）熱塑性塑料中金屬離子（特別是 銀離子）之遷移可明顯地發生在空氣濕度較高-，室溫較高-及/或施加至構件上之電壓較高時。導線架表面-或黏合劑 塡料之銀離子例如沿著所施加之電場之電場線經由該塑料 (例如，PPA)而遷移。例如，玻璃纖維塡料可促進銀之遷移。
藉由使用金以取代銀，則一方面可使有害性之金屬遷移 之危險性減小，但另一方面會因此形成較大之構件成本。 【發明內容】 本發明之目的是提供一種殻體，其允許在該組件中使用 一種易於遷移之金屬（例如，銀）或銀離子，同時不會由於 該金屬之遷移而使該組件快速損害之危險性大大地增加。 又，上述目的特別是使用一種發出-及/或接收輻射之組 件來達成，其具有一種導線架，該導線架塗佈銀或塗佈另一 在塑料之電場中易於遷移之金屬且至少一部份以該殼體來包 I244168 封’該殻體中可抑制該金屬在塑料中之遷移或至少使該遷 移大大地受阻。 該目的以具有申請專利範圍第1項特徵之塑膠殻體來達 成。 本發明中使用塑膠殼體所用之較佳之組件描述在申請專 利範圍第16項中。本發明中殼體製造所用之塑膠殼體材 料描述在申請專利範圍第20項中。
該殻體，該組件和該塑膠殻體材料之有利之其它形式描 述在申請專利範圍第2至15項，第17至19項或第21至 27項中。 在本發明之殼體中，該塑料是以塡料微粒來設定，各微 粒可使該金屬及/或金屬離子在該塑料中之遷移現象受到抑 制或至少大大地受阻。各微粒特別是指小板形-，球體形-， 長方六面體形-或其它非纖維形之塡料微粒。 本發明之塡料微粒不像玻璃纖維一樣具有一種使金屬離 子遷移至電場中之加速作用，而是大大地防止此種現象。
就上述而言，全部之塡料都可稱爲塡料微粒，其在本發 明之塑膠殼體中主要目的是抑制金屬或金屬離子之遷移或 使該遷移至少大大地受阻。 銀及/或銀t離子和其它金屬及/或金屬離子之遷移問題首 先大範圍地發生在熱塑性塑料中，但亦可發生在硬塑性塑 料中，其中同樣會造成損害。 在較佳之實施形式中，一種金屬導線架利用本發明之殼 體來變形。該導線架較佳是藉由濺鍍澆注法或藉由濺鍍壓 1244168 製法來製成。此種構造形式亦稱爲所謂預模-造形。該殼體 特別優良的是完全包圍該導線架之至少一部份。這樣可使 該殼體和導線架之間達成一種技術上穩定之連接。 本發明之殼體特別有利的是在造形中與一種導線架一起 使用，該導線架含有一種金屬或塗佈一種金屬，該金屬遷 移至塑料中之傾向較高。在此種情況下，導線架表面和殼 體之間之界面（經由該界面該金屬及/或金屬離子可漫遊至 該殻體中）較大。
遷移至塑料中之金屬原子及/或金屬離子所需之其它之源 (source)可以是一種以金屬塡入之導電性黏合劑，藉此可使 殻體中之晶片固定至導線架上或固定至導電軌上。此種導 電性黏合劑可使晶片和導線架（或導電軌）之間形成一種電 性連接且同時亦形成機械性連接。晶片和導線架（或導電軌） 之間所流出之導電性黏合劑可直接與殼體相接觸，使金屬 原子或金屬離子可由該導電性黏合劑進入該殼體之材料 中。此種問題特別是在通常會變得更小之構造形式中會變 得更重要。本發明之殼體特別適合用在此種造形中。 本發明之殻體特別適合用在，，組件外殼中使用銀，，之情況 中。由於銀特別容易遷移至熱塑性塑料中且特別是會影響 一種電場’則銀之使用目前很受限制。但銀由於較金，鈀 或鉑在價格上低很多而成爲一種所期望之接觸金屬。類似 情況適用於銅或鎳。 該塡料較佳是具有陶瓷-或礦物微粒。 該塡料微粒較佳是具有一種小板形之形式。這些微粒之 1244168 較隨機之分佈由於幾何上之原因而使遷移至殼體中變成不 容易。在組構式（t e X t u r e d)分佈中一種與各小板之平面成9 0() 之漫遊方式可大大地被防止。又，小板形式之塡料微粒所 具有之優點是：其由於類似於短纖維之高的長度對厚度之 比（ratio)而對該殼體中塑料之機械強化作用有幫助。 在該殻體之特別有利之實施形式中，該塡料具有一種瓷 土。 在另一較佳之實施形式中，該塡料微粒具有玻璃小球。
有利之方式是利用各塡料微粒來適當地調整該殻體之機 械特性，例如，拉伸強度，E-模數和打擊韌性。 本發明之殼體特別適合用在具有至少一種光學偵測器晶 片之組件中。這些晶片以高的截止電壓來操作，使殼體上 或殼體中之各終端之間形成一種強大之電場。同樣情況適 用於具有多個發出輻射之晶片之組件，當這些組件例如位 於很不相同之電位時。
在本發明殼體之另一種形式中，該外殻材料除了各塡料 微粒之外另具有漫射微粒。這些漫射微粒可使該殻體至少 廣泛地成爲不透明且具有一種高的漫射反射度。各漫射微 粒較佳是具有二氧化鈦。 該殼體具有PPA以作爲該殼體（特別是以導線架爲主之 光電組件中者）用之特別優良之材料。此種熱塑性材料可有 效地被濺鍍壓製或濺鍍澆注。除了 PPA之外亦可使用其它 以傳統方式用在外殻技術中之熱塑性塑膠材料。 【實施方式】 -10- 1244168 本發明之其它優點和有利之實施形式描述在第1至3圖 中所示之實施例中。 不同之實施例中相同或作用相同之組件以相同名稱來表 不且參考符號亦相同。 第1圖之實施例是一種半導體-偵測器-組件1，其具有由 熱塑性塑膠材料（例如，PPA)所構成之殼體2，該材料濺鍍 在由金屬所構成之導線架9周圍。導線架9設有一種銀塗 層7且一部份由殼體2所圍繞。該殼體2例如以濺鍍澆注 或濺鍍壓製而製成。在該導線架9之晶片載體部份8上利 用以銀塡入之導電性黏合劑3來施加一種偵測器晶片3 1。 該殼體2之熱塑性塑膠材料以由瓷土（其平均大小例如是3 um)所構成之小板形之塑料微粒6來偏移，其可抑制銀由 該導線架9之塗層7或由該導電性黏合劑3向外所進行之 遷移或至少使該遷移大大地受阻。 若未使用銀，則亦可使其它易於遷移至塑料中之金屬位 於該導線架9上及/或位於該導電性黏合劑3中。 若未使用該瓷土 -塡料，則亦可使用其它之粉末，較佳是 非金屬粉末，例如，陶瓷粉末或礦物質粉末，其微粒較佳 是具有一種小板形之形式。同樣亦可使用各玻璃小球作爲 塡料微粒。 除了塡料微粒（其可防止該金屬遷移至該殻體2之塑料中） 之外，該塑料中亦可存在其它之材料，例如，或類似 之漫射微粒，其可使該殼體成爲不透明且例如可達成一種 大約80%之高的漫射反射度。 1244168 如上所述，該殼體可由PPA所構成，但亦可由其它每一 種熱塑性塑料所構成，這些材料具有該殼體2所需之特性， 例如，機械穩定性和熱穩定性。 導線架9具有二個或更多之外部連接件4，5，其由殼體 2突出。該殼體2具有一種反射器-凹口 14，其中配置該晶 片3 1。該反射器-凹口 1 4中以一種可透過輻射之視窗件1 3 塡入。 銀遷移至電場12(其在該組件操作時存在於二個導線架 組件之間）中可藉由瓷土 -微粒6來抑制或使其大大地受 阻。因此不會-或只有在該組件1操作期間足夠長之後才會 在二個導線架組件之間造成干擾性之蠕變電流。 第2圖之實施例與前一實施例不同之處特別是：該組件 具有二個半導體晶片，例如，一個偵測器晶片和一個發射 器晶片’二個發射器晶片或二個偵測器晶片，其在該組件 操作時處於很不相同之電位。 在操作時在該導線架之各連接件之間存在著電場1 2， 22’其可加速一種金屬遷移至殻體中。在此種電場中藉由 小板形式之瓷土-塡料微粒6可抑制金屬之遷移或至少使該 遷移大大地受阻。 第3圖之組件具有傳統之殻體，其未含有本發明之塡料 微粒而是含有玻璃纖維。偵測器晶片3 1以含銀之導電性 黏合劑3固定在導線架9上且該導電性黏合劑直接與該殼 體2相接觸。在一段操作時間之後由於該二個互相隔開之 導線架組件之間之銀遷移現象而會在該殼體2中形成導電 -12- 1244168 1 路徑1 ο，其在最壞情況時會造成該組件整個失效。 h 本發明當然不限於上述之具體之實施例，而是可延伸至 二 具有本發明主要特徵之全部之元件。特別是本發明可用在 不同幾何形式之殻體中。本發明之殼體可設在以下之全部 之元件中，即，該元件中能以簡單之方式廣泛地抑制金屬 遷移至殼體中且因此應避免使用昂貴之接觸材料（例如， 金）。 本發明之保護範圍不是由本發明之說明書依據各實施例 來限制。反之，本發明包含每一種新的特徵和各特徵之每 一種組合，其特別是包含各申請專利範圍中各特徵之每一 種組合，當此種組合未明顯地顯示在各申請專利範圍中時 亦同。 【圖式簡單說明】 第1圖 第一實施例之切面圖。 第2圖 第一實施例之切面圖。 第3圖 未具備本發明之塡料微粒之殻體之切面圖。 主要元件之符號_: ^ 1 半導體-偵測器-組件 2 殼體 3 導電性黏合劑 4 ’ 5 外部連接件 6 瓷土-塡料微粒 7 塗層 8 晶片載體部份 -13- 1244168 9 導線架 10 導電路徑 1 1，21 半導體晶片區 12，22 電場 13 視窗件 14 反射器-凹口 3 1 偵測器晶片
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Claims (1)

1244168拾、申請專利範圍：
第9 3 1 05 2 84號「殼體，具有此種殼體之光電組件及塑膠殻 體材料」專利案 (2005年7月修正） 1. 一種電子組件（1)用之殼體（2)，其至少一部份是由塑料 所製成，塑料上或塑料中配置至少一第一電性連接導體 和至少一第二電性連接導體，其特徵爲：該塑料是以塡 料微粒（6)來偏移，各塡料微粒可防止金屬及/或金屬離 子遷移至塑料中。 · 2·如申請專利範圍第1項之殼體，其中該塑料是以塡料微 粒（6)來偏移，各塡料微粒可抑制或至少大大地防止金屬 及/或金屬離子遷移至塑料中。 3 ·如申請專利範圍第1項之殼體，其中各塡料微粒（6)具 有一種小板形，球形或長方六面體之形式或其它非纖維 之形式。 4·如申請專利範圍第1項之殼體，其中該塑料是熱塑性塑 料，特別是PPA。 · 5·如申請專利範圍第1項之殼體，其中該殼體（2)藉由濺 鍍澆注或濺鍍壓製而形成在電性導線架（9)上。 6·如申請專利範圍第5項之殼體，其中該電性導線架（9)具 有一種金屬表面（7)或具有一種金屬塗層，其含有適合遷 移至該塑料中之金屬及/或金屬離子。 7 ·如申請專利範圍第1至6項中任一項之殼體，其中至少 在各電性終端導體之一之上配置一以金屬塡入之導電性 1244168 黏合劑（3)，其含有適合遷移至該塑料中之金屬及/或金 屬離子。 8. 如申1靑專利範圍第1項之殼體，其中該金屬具有銀。 9. 如申請專利範圍第1項之殼體，其中該金屬具有cu及/ 或Ni。 10·如申請專利範圍第1項之殼體，其中該塡料微粒（6)具 有非金屬之微粒。 11. 如申請專利範圍第1〇項之殼體，其中該塡料微粒（6)具 有陶瓷微粒或礦物微粒。 12. 如申請專利範圍第11項之殼體，其中該塡料微粒（6)具 有瓷土 -微粒。 13. 如申請專利範圍第1〇項之殻體，其中該塡料微粒（6)具 有玻璃微粒（特別是玻璃小球）。 14·如申請專利範圍第1 項之殻體，其中以該塡料微粒（6) 來適當地調整該殼體（2)之機械特性。 15.如申請專利範圍第1項之殻體，其中該組件（1)是半導 體組件，其多個半導體晶片區（1 1，2 1)具有含金屬之部 份（3，7)，其中在該半導體組件（1)操作時在各個半導體 晶片區（11，21)之間產生電場（22，12)。 16·—種具有如申請專利範圍第1至15項中任一項殼體（2) 之光電組件（1 )，其特徵爲： -至少一種發送及/或接收電磁輻射之晶片（3 1)固定在該 電性導線架（9)之至少一晶片載體部份（8)上，該電性導 線架（9)具有至少二個外部電性連接部份（4，5 )，其導電 1244168 地與該晶片（31)相連， -該晶片載體部份（8)和外部電性連接部份（4，5)之一部份 區域由殻體（2)所圍繞，外部電性連接部份（4，5 )由該殼 體突出， -該殼體（2)具有一凹口（14)，其中在晶片載體部份（8)上 配置該晶片（3 1)。 1 7 ·如申§靑專利範圍第1 6項之光電組件，其中該晶片（3 1)是 半導體-光偵測器-晶片。 1 8 ·如申請專利範圍第1 6項之光電組件，其中該凹口（丨4)中 在多個晶片載體部份（8)上配置多個晶片（31)，其中至少 一個是半導體-光偵測器-晶片。 1 9 ·如申請專利範圔第1 6項之光電組件，其中該凹口（丨4)中 在多個晶片載體部份（8)上配置多個發出輻射之晶片 (31” 20.—種光電組件用之塑膠殼體材料，其含有一種塡料以調 整該熱膨脹係數及/或改良該熱學上及/或機械上之穩定 性，其特徵爲：該塡料含有塡料微粒（6)，其可防止金屬 及/或金屬離子遷移至該塑料中。 2 1 ·如申請專利範圍第2 0項之塑膠殼體材料，其中塡料含 有塡料微粒（6 )，其可抑制或至少大大地防止金屬及/或 金屬離子遷移至該塑料中。 22.如申請專利範圍第20項之塑膠殼體材料，其中塡料含 有塡料微粒（6)，其具有一種小板形，球形或長方六面體 之形式或其它非纖維之形式，各塡料微粒（6)可抑制或 1244168 至少大大地防止金屬及/或金屬離子遷移至該塑料中。 23·如申請專利範圍第20，21或22項之塑膠殻體材料，其 中塑料具有熱塑性材料，特別是PPA。 24·如申請專利範圍第20，21或22項之塑膠殻體材料其中 塡料微粒（6)具有非金屬之微粒。 25·如申請專利範圍第24項之塑膠殼體材料，其中塡料微 粒（6)具有陶瓷微粒或礦物微粒。 26·如申請專利範圍第25項之塑膠殻體材料，其中塡料微 粒（6)具有瓷土-微粒。 27 ·如申請專利範圍第25項之塑膠殼體材料，其中塡料微 粒（6)具有玻璃微粒，特別是玻璃小球。
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DE102008025491A1 (de) 2008-05-28 2009-12-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Leiterplatte
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JPH0612829B2 (ja) * 1984-04-24 1994-02-16 株式会社東芝 半導体装置
CA1331245C (en) * 1987-12-21 1994-08-02 Carol Ann Latham Thermally conductive ceramic/polymer composites
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WO1999007023A1 (de) * 1997-07-29 1999-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Optoelektronisches bauelement
JP2001335708A (ja) * 2000-05-26 2001-12-04 Matsushita Electric Works Ltd 熱可塑性樹脂組成物、その製造方法、並びに半導体素子収納用パッケージ
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DE10117890B4 (de) * 2001-04-10 2007-06-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines strahlungsempfangenden und/oder -emittierenden Halbleiterbauelements und strahlungsempfangendes und/oder -emittierendes Halbleiterbauelement
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WO2004081972A2 (de) 2004-09-23
EP1604385B1 (de) 2019-12-11
EP1604385A2 (de) 2005-12-14
TW200423314A (en) 2004-11-01

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