TWI240987B - Process for producing a strontium ruthenium oxide protective layer on a top electrode - Google Patents

Process for producing a strontium ruthenium oxide protective layer on a top electrode Download PDF

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Publication number
TWI240987B
TWI240987B TW090125108A TW90125108A TWI240987B TW I240987 B TWI240987 B TW I240987B TW 090125108 A TW090125108 A TW 090125108A TW 90125108 A TW90125108 A TW 90125108A TW I240987 B TWI240987 B TW I240987B
Authority
TW
Taiwan
Prior art keywords
layer
top electrode
ferroelectric
annealing
ferroelectric capacitor
Prior art date
Application number
TW090125108A
Other languages
English (en)
Chinese (zh)
Inventor
Sun Sheng
Hickert Ceorge
Katsuyoshi Matsuura
Takeyasu Saito
Soichiro Ozawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TWI240987B publication Critical patent/TWI240987B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Semiconductor Memories (AREA)
TW090125108A 2001-02-28 2001-10-11 Process for producing a strontium ruthenium oxide protective layer on a top electrode TWI240987B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/797,005 US6674633B2 (en) 2001-02-28 2001-02-28 Process for producing a strontium ruthenium oxide protective layer on a top electrode

Publications (1)

Publication Number Publication Date
TWI240987B true TWI240987B (en) 2005-10-01

Family

ID=25169649

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090125108A TWI240987B (en) 2001-02-28 2001-10-11 Process for producing a strontium ruthenium oxide protective layer on a top electrode

Country Status (4)

Country Link
US (1) US6674633B2 (https=)
JP (1) JP4104342B2 (https=)
KR (1) KR100706847B1 (https=)
TW (1) TWI240987B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674633B2 (en) * 2001-02-28 2004-01-06 Fujitsu Limited Process for producing a strontium ruthenium oxide protective layer on a top electrode
KR20030041495A (ko) * 2001-11-20 2003-05-27 주식회사 하이닉스반도체 반도체 소자 및 제조 방법
JP4228569B2 (ja) * 2001-11-28 2009-02-25 セイコーエプソン株式会社 電子デバイス用基板の製造方法及び電子デバイスの製造方法
CN100336226C (zh) * 2001-12-14 2007-09-05 株式会社日立制作所 半导体器件
US6573587B1 (en) * 2002-05-28 2003-06-03 Oki Electric Industry Co., Ltd. Metal oxide capacitor with hydrogen diffusion blocking covering
US6785119B2 (en) * 2002-11-29 2004-08-31 Infineon Technologies Ag Ferroelectric capacitor and process for its manufacture
JP3924286B2 (ja) * 2003-10-31 2007-06-06 Ｔｄｋ株式会社 積層セラミック電子部品の製造方法
EP1557665A1 (fr) * 2004-01-21 2005-07-27 CSEM Centre Suisse d'Electronique et de Microtechnique SA Système d'electrodes pour capteur electrochimique
JP4589092B2 (ja) * 2004-12-03 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100591776B1 (ko) * 2005-01-03 2006-06-26 삼성전자주식회사 강유전체 메모리 소자 및 그 제조방법
JP4438659B2 (ja) * 2005-03-24 2010-03-24 Ｔｄｋ株式会社 積層セラミック電子部品の製造方法
KR100725451B1 (ko) * 2005-06-07 2007-06-07 삼성전자주식회사 강유전체 캐패시터의 제조 방법 및 이를 이용한 반도체장치의 제조 방법
US20070212797A1 (en) * 2006-03-08 2007-09-13 Suk-Hun Choi Method of forming a ferroelectric device
JP4983172B2 (ja) * 2006-09-12 2012-07-25 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7709359B2 (en) * 2007-09-05 2010-05-04 Qimonda Ag Integrated circuit with dielectric layer
EP2271789A1 (en) * 2008-03-26 2011-01-12 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of ternary oxide films containing ruthenium and alkali earth metals
JP5502302B2 (ja) * 2008-09-26 2014-05-28 ローム株式会社 半導体装置およびその製造方法
US7939442B2 (en) * 2009-04-10 2011-05-10 Micron Technology, Inc. Strontium ruthenium oxide interface
WO2011106072A2 (en) 2010-02-23 2011-09-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
CN103972044A (zh) * 2013-02-01 2014-08-06 中芯国际集成电路制造(上海)有限公司 Mim电容器的制备方法以及半导体器件的制备方法
WO2015194458A1 (ja) * 2014-06-20 2015-12-23 株式会社アルバック 多層膜の製造方法および多層膜

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Publication number Priority date Publication date Assignee Title
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
KR100199095B1 (ko) * 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
JP3171110B2 (ja) 1996-06-19 2001-05-28 ソニー株式会社 強誘電体キャパシタ構造の製造方法
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
US6115281A (en) * 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
KR100458084B1 (ko) * 1997-12-27 2005-06-07 주식회사 하이닉스반도체 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법
KR100335399B1 (ko) * 1998-10-29 2002-07-18 박종섭 강유전체램 소자의 제조방법
US6172385B1 (en) * 1998-10-30 2001-01-09 International Business Machines Corporation Multilayer ferroelectric capacitor structure
JP3249496B2 (ja) * 1998-11-10 2002-01-21 株式会社東芝 半導体装置及び半導体装置の製造方法
US6674633B2 (en) * 2001-02-28 2004-01-06 Fujitsu Limited Process for producing a strontium ruthenium oxide protective layer on a top electrode

Also Published As

Publication number Publication date
US20020149040A1 (en) 2002-10-17
JP4104342B2 (ja) 2008-06-18
KR100706847B1 (ko) 2007-04-13
KR20020070624A (ko) 2002-09-10
US6674633B2 (en) 2004-01-06
JP2002314044A (ja) 2002-10-25

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