TWI238849B - Composition for polishing metal on semiconductor wafer and method of using same - Google Patents

Composition for polishing metal on semiconductor wafer and method of using same Download PDF

Info

Publication number
TWI238849B
TWI238849B TW088108083A TW88108083A TWI238849B TW I238849 B TWI238849 B TW I238849B TW 088108083 A TW088108083 A TW 088108083A TW 88108083 A TW88108083 A TW 88108083A TW I238849 B TWI238849 B TW I238849B
Authority
TW
Taiwan
Prior art keywords
polishing
metal film
fine particles
semiconductor substrate
composition
Prior art date
Application number
TW088108083A
Other languages
English (en)
Chinese (zh)
Inventor
Fumiyoshi Ono
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of TWI238849B publication Critical patent/TWI238849B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW088108083A 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same TWI238849B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13693498 1998-05-19
JP11515899A JP2000038573A (ja) 1998-05-19 1999-04-22 半導体装置用金属膜研磨スラリ―

Publications (1)

Publication Number Publication Date
TWI238849B true TWI238849B (en) 2005-09-01

Family

ID=26453731

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108083A TWI238849B (en) 1998-05-19 1999-05-18 Composition for polishing metal on semiconductor wafer and method of using same

Country Status (3)

Country Link
JP (1) JP2000038573A (enExample)
KR (1) KR100328308B1 (enExample)
TW (1) TWI238849B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4557105B2 (ja) * 1999-05-28 2010-10-06 日産化学工業株式会社 研磨用組成物
KR100799965B1 (ko) * 2000-07-08 2008-02-01 에포크 머티리얼 컴퍼니, 리미티드 화학-기계적 연마제 조성물 및 연마 방법
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
KR100447975B1 (ko) * 2001-12-28 2004-09-10 주식회사 하이닉스반도체 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법
KR100444308B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR100638317B1 (ko) * 2004-07-28 2006-10-25 주식회사 케이씨텍 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP5204226B2 (ja) * 2008-06-13 2013-06-05 株式会社フジミインコーポレーテッド アルミニウム酸化物粒子及びそれを含有する研磨用組成物
US20130037515A1 (en) * 2010-04-28 2013-02-14 Baikowski Japan Co., Ltd. Sapphire polishing slurry and sapphire polishing method

Also Published As

Publication number Publication date
JP2000038573A (ja) 2000-02-08
KR19990088368A (ko) 1999-12-27
KR100328308B1 (ko) 2002-03-16

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