KR100328308B1 - 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 - Google Patents
반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 Download PDFInfo
- Publication number
- KR100328308B1 KR100328308B1 KR1019990017816A KR19990017816A KR100328308B1 KR 100328308 B1 KR100328308 B1 KR 100328308B1 KR 1019990017816 A KR1019990017816 A KR 1019990017816A KR 19990017816 A KR19990017816 A KR 19990017816A KR 100328308 B1 KR100328308 B1 KR 100328308B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- metal film
- alumina
- fine particles
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13693498 | 1998-05-19 | ||
| JP10-136934 | 1998-05-19 | ||
| JP11515899A JP2000038573A (ja) | 1998-05-19 | 1999-04-22 | 半導体装置用金属膜研磨スラリ― |
| JP11-115158 | 1999-04-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990088368A KR19990088368A (ko) | 1999-12-27 |
| KR100328308B1 true KR100328308B1 (ko) | 2002-03-16 |
Family
ID=26453731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990017816A Expired - Fee Related KR100328308B1 (ko) | 1998-05-19 | 1999-05-18 | 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000038573A (enExample) |
| KR (1) | KR100328308B1 (enExample) |
| TW (1) | TWI238849B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4557105B2 (ja) * | 1999-05-28 | 2010-10-06 | 日産化学工業株式会社 | 研磨用組成物 |
| KR100799965B1 (ko) * | 2000-07-08 | 2008-02-01 | 에포크 머티리얼 컴퍼니, 리미티드 | 화학-기계적 연마제 조성물 및 연마 방법 |
| KR100535074B1 (ko) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
| US20030003747A1 (en) * | 2001-06-29 | 2003-01-02 | Jae Hong Kim | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same |
| KR100447975B1 (ko) * | 2001-12-28 | 2004-09-10 | 주식회사 하이닉스반도체 | 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법 |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| KR100638317B1 (ko) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
| KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| EP2322322B2 (en) * | 2008-06-13 | 2022-10-05 | Fujimi Incorporated | Aluminum oxide particle and polishing composition containing the same |
| CN102869478A (zh) * | 2010-04-28 | 2013-01-09 | 日本百考基株式会社 | 蓝宝石研磨用浆液和蓝宝石的研磨方法 |
-
1999
- 1999-04-22 JP JP11515899A patent/JP2000038573A/ja not_active Withdrawn
- 1999-05-18 KR KR1019990017816A patent/KR100328308B1/ko not_active Expired - Fee Related
- 1999-05-18 TW TW088108083A patent/TWI238849B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000038573A (ja) | 2000-02-08 |
| KR19990088368A (ko) | 1999-12-27 |
| TWI238849B (en) | 2005-09-01 |
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