TWI237070B - Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same - Google Patents
Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same Download PDFInfo
- Publication number
- TWI237070B TWI237070B TW091104068A TW91104068A TWI237070B TW I237070 B TWI237070 B TW I237070B TW 091104068 A TW091104068 A TW 091104068A TW 91104068 A TW91104068 A TW 91104068A TW I237070 B TWI237070 B TW I237070B
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- Prior art keywords
- processing
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- liquid
- treatment
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims description 184
- 238000012993 chemical processing Methods 0.000 title claims description 21
- 238000012545 processing Methods 0.000 claims abstract description 311
- 239000012530 fluid Substances 0.000 claims abstract description 19
- 238000011282 treatment Methods 0.000 claims description 221
- 239000007788 liquid Substances 0.000 claims description 211
- 230000008569 process Effects 0.000 claims description 124
- 239000000126 substance Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 39
- 235000012431 wafers Nutrition 0.000 claims description 31
- 230000000694 effects Effects 0.000 claims description 22
- 230000010349 pulsation Effects 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 20
- 238000003860 storage Methods 0.000 claims description 19
- 230000000149 penetrating effect Effects 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 13
- 238000007747 plating Methods 0.000 abstract description 272
- 239000000243 solution Substances 0.000 description 139
- 238000009713 electroplating Methods 0.000 description 105
- 230000007547 defect Effects 0.000 description 53
- 230000014759 maintenance of location Effects 0.000 description 46
- 239000010410 layer Substances 0.000 description 38
- 238000007772 electroless plating Methods 0.000 description 22
- 230000005611 electricity Effects 0.000 description 20
- 239000010931 gold Substances 0.000 description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 14
- 238000007789 sealing Methods 0.000 description 13
- 239000002253 acid Substances 0.000 description 12
- 238000001994 activation Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 239000002893 slag Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- 241001070941 Castanea Species 0.000 description 4
- 235000014036 Castanea Nutrition 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000002738 chelating agent Substances 0.000 description 4
- 238000005242 forging Methods 0.000 description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 244000062793 Sorghum vulgare Species 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- SRCZENKQCOSNAI-UHFFFAOYSA-H gold(3+);trisulfite Chemical compound [Au+3].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O.[O-]S([O-])=O SRCZENKQCOSNAI-UHFFFAOYSA-H 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 235000019713 millet Nutrition 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 244000241257 Cucumis melo Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 1
- 244000284380 Hibiscus rosa sinensis Species 0.000 description 1
- 241000997494 Oneirodidae Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 241000269799 Perca fluviatilis Species 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 102000001708 Protein Isoforms Human genes 0.000 description 1
- 108010029485 Protein Isoforms Proteins 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000007705 chemical test Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000034994 death Effects 0.000 description 1
- 231100000517 death Toxicity 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- FODIHFPARWJLJA-UHFFFAOYSA-N disodium;dicyanide Chemical compound [Na+].[Na+].N#[C-].N#[C-] FODIHFPARWJLJA-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- KPQDSKZQRXHKHY-UHFFFAOYSA-N gold potassium Chemical class [K].[Au] KPQDSKZQRXHKHY-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- BQJCRHHNABKAKU-KBQPJGBKSA-N morphine Chemical compound O([C@H]1[C@H](C=C[C@H]23)O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4O BQJCRHHNABKAKU-KBQPJGBKSA-N 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001103431 | 2001-04-02 | ||
| JP2001363086A JP2002363788A (ja) | 2001-04-02 | 2001-11-28 | 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI237070B true TWI237070B (en) | 2005-08-01 |
Family
ID=18956495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091104068A TWI237070B (en) | 2001-04-02 | 2002-03-05 | Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US20020139684A1 (enExample) |
| JP (1) | JP2002363788A (enExample) |
| KR (1) | KR100477055B1 (enExample) |
| TW (1) | TWI237070B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813482A (zh) * | 2020-12-30 | 2021-05-18 | 泉芯集成电路制造(济南)有限公司 | 芯片电镀系统及芯片电镀控制方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7883739B2 (en) * | 2003-06-16 | 2011-02-08 | Lam Research Corporation | Method for strengthening adhesion between dielectric layers formed adjacent to metal layers |
| US6881437B2 (en) | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
| US6860944B2 (en) * | 2003-06-16 | 2005-03-01 | Blue29 Llc | Microelectronic fabrication system components and method for processing a wafer using such components |
| WO2004114386A2 (en) * | 2003-06-16 | 2004-12-29 | Blue29 Corporation | Methods and system for processing a microelectronic topography |
| CN100393917C (zh) * | 2003-12-26 | 2008-06-11 | 台湾积体电路制造股份有限公司 | 化学电镀方法和装置 |
| KR100832705B1 (ko) * | 2006-12-23 | 2008-05-28 | 동부일렉트로닉스 주식회사 | 시스템 인 패키지의 비아 도금방법 및 그 시스템 |
| US7776741B2 (en) | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
| US9109295B2 (en) | 2009-10-12 | 2015-08-18 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| US10472730B2 (en) | 2009-10-12 | 2019-11-12 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| CN103880127A (zh) * | 2012-12-21 | 2014-06-25 | 陈晓波 | 一种等离子管式液体表面放电水处理装置 |
| JP2015178661A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社荏原製作所 | 無電解めっき方法 |
| CN104328465B (zh) * | 2014-11-10 | 2017-05-24 | 浙江振有电子股份有限公司 | Hdi印制线路板高均匀性通孔电镀装置 |
| WO2018200370A1 (en) * | 2017-04-24 | 2018-11-01 | University Of North Texas | Nanomanufacturing of metallic glasses for energy conversion and storage |
| TWI774797B (zh) | 2017-07-10 | 2022-08-21 | 美商應用材料股份有限公司 | 具有減少的夾帶空氣的電鍍系統 |
| US10692735B2 (en) | 2017-07-28 | 2020-06-23 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
| CN111560638B (zh) * | 2020-07-06 | 2021-06-29 | 苏州清飙科技有限公司 | 晶圆电镀设备 |
| CN113873774B (zh) * | 2021-09-15 | 2023-08-29 | 江苏贺鸿电子有限公司 | 一种印刷电路板制作的水平沉铜装置 |
| CN113930813B (zh) * | 2021-11-17 | 2022-04-08 | 珠海市创智芯科技有限公司 | 一种应用于晶圆级封装的电镀铜溶液及其电镀工艺 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609129A (ja) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | ウエツト処理装置 |
| US5290423A (en) * | 1992-04-27 | 1994-03-01 | Hughes Aircraft Company | Electrochemical interconnection |
| US5520205A (en) * | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
| DE19534521C1 (de) * | 1995-09-06 | 1996-11-21 | Atotech Deutschland Gmbh | Verfahren und Vorrichtung zum Behandeln von sich in Werkstücke erstreckende Löcher oder Vertiefungen mit flüssigen Behandlungsmitteln und Anwendung des Verfahrens zur Behandlung von Leiterplatten |
| KR200224866Y1 (ko) * | 1996-04-10 | 2001-11-30 | 김영환 | 반도체 웨이퍼 처리액 공급장치 |
| KR100202191B1 (ko) * | 1996-07-18 | 1999-06-15 | 문정환 | 반도체 웨이퍼 습식 처리장치 |
| JP3490238B2 (ja) * | 1997-02-17 | 2004-01-26 | 三菱電機株式会社 | メッキ処理装置およびメッキ処理方法 |
| JP3462970B2 (ja) * | 1997-04-28 | 2003-11-05 | 三菱電機株式会社 | メッキ処理装置およびメッキ処理方法 |
| TW405158B (en) * | 1997-09-17 | 2000-09-11 | Ebara Corp | Plating apparatus for semiconductor wafer processing |
| US6616774B2 (en) * | 1997-12-26 | 2003-09-09 | Spc Electronics | Wafer cleaning device and tray for use in wafer cleaning device |
| EP1055020A2 (en) * | 1998-02-12 | 2000-11-29 | ACM Research, Inc. | Plating apparatus and method |
| US6395152B1 (en) * | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
| BR9906873A (pt) * | 1998-10-14 | 2002-01-02 | Faraday Technology Inc | Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados |
| US6454918B1 (en) * | 1999-03-23 | 2002-09-24 | Electroplating Engineers Of Japan Limited | Cup type plating apparatus |
| KR100293239B1 (ko) * | 1999-06-23 | 2001-06-15 | 김무 | 반도체 기질 도금장치 및 방법 |
-
2001
- 2001-08-02 US US09/919,875 patent/US20020139684A1/en not_active Abandoned
- 2001-11-28 JP JP2001363086A patent/JP2002363788A/ja active Pending
-
2002
- 2002-03-05 TW TW091104068A patent/TWI237070B/zh not_active IP Right Cessation
- 2002-03-11 US US10/093,417 patent/US20020139663A1/en not_active Abandoned
- 2002-03-26 KR KR10-2002-0016429A patent/KR100477055B1/ko not_active Expired - Lifetime
-
2003
- 2003-09-16 US US10/662,475 patent/US20040060824A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813482A (zh) * | 2020-12-30 | 2021-05-18 | 泉芯集成电路制造(济南)有限公司 | 芯片电镀系统及芯片电镀控制方法 |
| CN112813482B (zh) * | 2020-12-30 | 2021-11-02 | 泉芯集成电路制造(济南)有限公司 | 芯片电镀系统及芯片电镀控制方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100477055B1 (ko) | 2005-03-17 |
| KR20020077811A (ko) | 2002-10-14 |
| US20020139684A1 (en) | 2002-10-03 |
| JP2002363788A (ja) | 2002-12-18 |
| US20020139663A1 (en) | 2002-10-03 |
| US20040060824A1 (en) | 2004-04-01 |
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