TWI237070B - Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same - Google Patents

Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same Download PDF

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Publication number
TWI237070B
TWI237070B TW091104068A TW91104068A TWI237070B TW I237070 B TWI237070 B TW I237070B TW 091104068 A TW091104068 A TW 091104068A TW 91104068 A TW91104068 A TW 91104068A TW I237070 B TWI237070 B TW I237070B
Authority
TW
Taiwan
Prior art keywords
processing
cup
closed
liquid
treatment
Prior art date
Application number
TW091104068A
Other languages
English (en)
Chinese (zh)
Inventor
Katsuya Kosaki
Takeo Nakamoto
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TWI237070B publication Critical patent/TWI237070B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW091104068A 2001-04-02 2002-03-05 Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same TWI237070B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001103431 2001-04-02
JP2001363086A JP2002363788A (ja) 2001-04-02 2001-11-28 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法

Publications (1)

Publication Number Publication Date
TWI237070B true TWI237070B (en) 2005-08-01

Family

ID=18956495

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091104068A TWI237070B (en) 2001-04-02 2002-03-05 Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same

Country Status (4)

Country Link
US (3) US20020139684A1 (enExample)
JP (1) JP2002363788A (enExample)
KR (1) KR100477055B1 (enExample)
TW (1) TWI237070B (enExample)

Cited By (1)

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CN112813482A (zh) * 2020-12-30 2021-05-18 泉芯集成电路制造(济南)有限公司 芯片电镀系统及芯片电镀控制方法

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US6860944B2 (en) * 2003-06-16 2005-03-01 Blue29 Llc Microelectronic fabrication system components and method for processing a wafer using such components
US7883739B2 (en) 2003-06-16 2011-02-08 Lam Research Corporation Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
WO2004114386A2 (en) * 2003-06-16 2004-12-29 Blue29 Corporation Methods and system for processing a microelectronic topography
CN100393917C (zh) * 2003-12-26 2008-06-11 台湾积体电路制造股份有限公司 化学电镀方法和装置
KR100832705B1 (ko) * 2006-12-23 2008-05-28 동부일렉트로닉스 주식회사 시스템 인 패키지의 비아 도금방법 및 그 시스템
US7776741B2 (en) * 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
US9109295B2 (en) 2009-10-12 2015-08-18 Novellus Systems, Inc. Electrolyte concentration control system for high rate electroplating
US10472730B2 (en) 2009-10-12 2019-11-12 Novellus Systems, Inc. Electrolyte concentration control system for high rate electroplating
CN103880127A (zh) * 2012-12-21 2014-06-25 陈晓波 一种等离子管式液体表面放电水处理装置
JP2015178661A (ja) * 2014-03-19 2015-10-08 株式会社荏原製作所 無電解めっき方法
CN104328465B (zh) * 2014-11-10 2017-05-24 浙江振有电子股份有限公司 Hdi印制线路板高均匀性通孔电镀装置
WO2018200370A1 (en) * 2017-04-24 2018-11-01 University Of North Texas Nanomanufacturing of metallic glasses for energy conversion and storage
TWI774797B (zh) 2017-07-10 2022-08-21 美商應用材料股份有限公司 具有減少的夾帶空氣的電鍍系統
US10692735B2 (en) 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
CN111560638B (zh) * 2020-07-06 2021-06-29 苏州清飙科技有限公司 晶圆电镀设备
CN113873774B (zh) * 2021-09-15 2023-08-29 江苏贺鸿电子有限公司 一种印刷电路板制作的水平沉铜装置
CN113930813B (zh) * 2021-11-17 2022-04-08 珠海市创智芯科技有限公司 一种应用于晶圆级封装的电镀铜溶液及其电镀工艺

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US5290423A (en) * 1992-04-27 1994-03-01 Hughes Aircraft Company Electrochemical interconnection
US5520205A (en) * 1994-07-01 1996-05-28 Texas Instruments Incorporated Apparatus for wafer cleaning with rotation
DE19534521C1 (de) * 1995-09-06 1996-11-21 Atotech Deutschland Gmbh Verfahren und Vorrichtung zum Behandeln von sich in Werkstücke erstreckende Löcher oder Vertiefungen mit flüssigen Behandlungsmitteln und Anwendung des Verfahrens zur Behandlung von Leiterplatten
KR200224866Y1 (ko) * 1996-04-10 2001-11-30 김영환 반도체 웨이퍼 처리액 공급장치
KR100202191B1 (ko) * 1996-07-18 1999-06-15 문정환 반도체 웨이퍼 습식 처리장치
JP3490238B2 (ja) * 1997-02-17 2004-01-26 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
JP3462970B2 (ja) * 1997-04-28 2003-11-05 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112813482A (zh) * 2020-12-30 2021-05-18 泉芯集成电路制造(济南)有限公司 芯片电镀系统及芯片电镀控制方法
CN112813482B (zh) * 2020-12-30 2021-11-02 泉芯集成电路制造(济南)有限公司 芯片电镀系统及芯片电镀控制方法

Also Published As

Publication number Publication date
KR100477055B1 (ko) 2005-03-17
KR20020077811A (ko) 2002-10-14
US20020139663A1 (en) 2002-10-03
US20020139684A1 (en) 2002-10-03
US20040060824A1 (en) 2004-04-01
JP2002363788A (ja) 2002-12-18

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