JP2002363788A - 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法 - Google Patents

化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法

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Publication number
JP2002363788A
JP2002363788A JP2001363086A JP2001363086A JP2002363788A JP 2002363788 A JP2002363788 A JP 2002363788A JP 2001363086 A JP2001363086 A JP 2001363086A JP 2001363086 A JP2001363086 A JP 2001363086A JP 2002363788 A JP2002363788 A JP 2002363788A
Authority
JP
Japan
Prior art keywords
plating
closed
processing
cup
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001363086A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002363788A5 (enExample
Inventor
Katsuya Ozaki
克也 小崎
Takeo Nakamoto
武夫 中本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001363086A priority Critical patent/JP2002363788A/ja
Priority to TW091104068A priority patent/TWI237070B/zh
Priority to US10/093,417 priority patent/US20020139663A1/en
Priority to KR10-2002-0016429A priority patent/KR100477055B1/ko
Publication of JP2002363788A publication Critical patent/JP2002363788A/ja
Priority to US10/662,475 priority patent/US20040060824A1/en
Publication of JP2002363788A5 publication Critical patent/JP2002363788A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2001363086A 2001-04-02 2001-11-28 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法 Pending JP2002363788A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001363086A JP2002363788A (ja) 2001-04-02 2001-11-28 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法
TW091104068A TWI237070B (en) 2001-04-02 2002-03-05 Chemical processing apparatus, chemical processing method, and method of manufacturing semiconductor device using the same
US10/093,417 US20020139663A1 (en) 2001-04-02 2002-03-11 Chemical treatment system
KR10-2002-0016429A KR100477055B1 (ko) 2001-04-02 2002-03-26 화학적 처리장치와 도금처리장치 및 화학적 처리방법
US10/662,475 US20040060824A1 (en) 2001-04-02 2003-09-16 Chemical treatment, plating, and residue elimination method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-103431 2001-04-02
JP2001103431 2001-04-02
JP2001363086A JP2002363788A (ja) 2001-04-02 2001-11-28 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法

Publications (2)

Publication Number Publication Date
JP2002363788A true JP2002363788A (ja) 2002-12-18
JP2002363788A5 JP2002363788A5 (enExample) 2004-11-11

Family

ID=18956495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001363086A Pending JP2002363788A (ja) 2001-04-02 2001-11-28 化学的処理装置とメッキ処理装置および化学的処理方法とメッキ処理方法と残渣除去処理方法ならびにそれを用いた半導体装置の製造方法およびプリント基板の製造方法

Country Status (4)

Country Link
US (3) US20020139684A1 (enExample)
JP (1) JP2002363788A (enExample)
KR (1) KR100477055B1 (enExample)
TW (1) TWI237070B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100393917C (zh) * 2003-12-26 2008-06-11 台湾积体电路制造股份有限公司 化学电镀方法和装置
WO2019014236A1 (en) * 2017-07-10 2019-01-17 Applied Materials, Inc. VENEER SYSTEMS HAVING REDUCED AIR TRAINING

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US7883739B2 (en) * 2003-06-16 2011-02-08 Lam Research Corporation Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
US6881437B2 (en) 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US6860944B2 (en) * 2003-06-16 2005-03-01 Blue29 Llc Microelectronic fabrication system components and method for processing a wafer using such components
WO2004114386A2 (en) * 2003-06-16 2004-12-29 Blue29 Corporation Methods and system for processing a microelectronic topography
KR100832705B1 (ko) * 2006-12-23 2008-05-28 동부일렉트로닉스 주식회사 시스템 인 패키지의 비아 도금방법 및 그 시스템
US7776741B2 (en) 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
US9109295B2 (en) 2009-10-12 2015-08-18 Novellus Systems, Inc. Electrolyte concentration control system for high rate electroplating
US10472730B2 (en) 2009-10-12 2019-11-12 Novellus Systems, Inc. Electrolyte concentration control system for high rate electroplating
CN103880127A (zh) * 2012-12-21 2014-06-25 陈晓波 一种等离子管式液体表面放电水处理装置
JP2015178661A (ja) * 2014-03-19 2015-10-08 株式会社荏原製作所 無電解めっき方法
CN104328465B (zh) * 2014-11-10 2017-05-24 浙江振有电子股份有限公司 Hdi印制线路板高均匀性通孔电镀装置
WO2018200370A1 (en) * 2017-04-24 2018-11-01 University Of North Texas Nanomanufacturing of metallic glasses for energy conversion and storage
US10692735B2 (en) 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
CN111560638B (zh) * 2020-07-06 2021-06-29 苏州清飙科技有限公司 晶圆电镀设备
CN112813482B (zh) * 2020-12-30 2021-11-02 泉芯集成电路制造(济南)有限公司 芯片电镀系统及芯片电镀控制方法
CN113873774B (zh) * 2021-09-15 2023-08-29 江苏贺鸿电子有限公司 一种印刷电路板制作的水平沉铜装置
CN113930813B (zh) * 2021-11-17 2022-04-08 珠海市创智芯科技有限公司 一种应用于晶圆级封装的电镀铜溶液及其电镀工艺

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JPS609129A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd ウエツト処理装置
US5290423A (en) * 1992-04-27 1994-03-01 Hughes Aircraft Company Electrochemical interconnection
US5520205A (en) * 1994-07-01 1996-05-28 Texas Instruments Incorporated Apparatus for wafer cleaning with rotation
DE19534521C1 (de) * 1995-09-06 1996-11-21 Atotech Deutschland Gmbh Verfahren und Vorrichtung zum Behandeln von sich in Werkstücke erstreckende Löcher oder Vertiefungen mit flüssigen Behandlungsmitteln und Anwendung des Verfahrens zur Behandlung von Leiterplatten
KR200224866Y1 (ko) * 1996-04-10 2001-11-30 김영환 반도체 웨이퍼 처리액 공급장치
KR100202191B1 (ko) * 1996-07-18 1999-06-15 문정환 반도체 웨이퍼 습식 처리장치
JP3490238B2 (ja) * 1997-02-17 2004-01-26 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
JP3462970B2 (ja) * 1997-04-28 2003-11-05 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
US6616774B2 (en) * 1997-12-26 2003-09-09 Spc Electronics Wafer cleaning device and tray for use in wafer cleaning device
EP1055020A2 (en) * 1998-02-12 2000-11-29 ACM Research, Inc. Plating apparatus and method
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
BR9906873A (pt) * 1998-10-14 2002-01-02 Faraday Technology Inc Eletrodeposição de metais em pequenos recessos usando campos elétricos modulados
US6454918B1 (en) * 1999-03-23 2002-09-24 Electroplating Engineers Of Japan Limited Cup type plating apparatus
KR100293239B1 (ko) * 1999-06-23 2001-06-15 김무 반도체 기질 도금장치 및 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100393917C (zh) * 2003-12-26 2008-06-11 台湾积体电路制造股份有限公司 化学电镀方法和装置
WO2019014236A1 (en) * 2017-07-10 2019-01-17 Applied Materials, Inc. VENEER SYSTEMS HAVING REDUCED AIR TRAINING
US11739434B2 (en) 2017-07-10 2023-08-29 Applied Materials, Inc. Plating systems having reduced air entrainment
US12312702B2 (en) 2017-07-10 2025-05-27 Applied Materials, Inc. Plating systems having reduced air entrainment

Also Published As

Publication number Publication date
KR100477055B1 (ko) 2005-03-17
TWI237070B (en) 2005-08-01
KR20020077811A (ko) 2002-10-14
US20020139684A1 (en) 2002-10-03
US20020139663A1 (en) 2002-10-03
US20040060824A1 (en) 2004-04-01

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