TWI222136B - Method for etching silicon dioxide using fluorocarbon gas chemistry - Google Patents

Method for etching silicon dioxide using fluorocarbon gas chemistry Download PDF

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Publication number
TWI222136B
TWI222136B TW088107265A TW88107265A TWI222136B TW I222136 B TWI222136 B TW I222136B TW 088107265 A TW088107265 A TW 088107265A TW 88107265 A TW88107265 A TW 88107265A TW I222136 B TWI222136 B TW I222136B
Authority
TW
Taiwan
Prior art keywords
patent application
etching
opening
scope
item
Prior art date
Application number
TW088107265A
Other languages
English (en)
Chinese (zh)
Inventor
Keyvan Khajehnouri
Thomas D Nguyen
George Mueller
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TWI222136B publication Critical patent/TWI222136B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW088107265A 1998-05-05 1999-05-05 Method for etching silicon dioxide using fluorocarbon gas chemistry TWI222136B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/071,960 US6117786A (en) 1998-05-05 1998-05-05 Method for etching silicon dioxide using fluorocarbon gas chemistry

Publications (1)

Publication Number Publication Date
TWI222136B true TWI222136B (en) 2004-10-11

Family

ID=22104686

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088107265A TWI222136B (en) 1998-05-05 1999-05-05 Method for etching silicon dioxide using fluorocarbon gas chemistry

Country Status (6)

Country Link
US (1) US6117786A (https=)
EP (1) EP1078395A1 (https=)
JP (1) JP4758002B2 (https=)
KR (1) KR100628932B1 (https=)
TW (1) TWI222136B (https=)
WO (1) WO1999057757A1 (https=)

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US6635335B1 (en) * 1999-06-29 2003-10-21 Micron Technology, Inc. Etching methods and apparatus and substrate assemblies produced therewith
DE19937994C2 (de) * 1999-08-11 2003-12-11 Infineon Technologies Ag Ätzprozeß für eine Dual Damascene Strukturierung einer Isolierschicht auf einer Halbleiterstruktur
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
US6486069B1 (en) * 1999-12-03 2002-11-26 Tegal Corporation Cobalt silicide etch process and apparatus
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US6554004B1 (en) * 2000-11-07 2003-04-29 Motorola, Inc. Method for removing etch residue resulting from a process for forming a via
US6686296B1 (en) * 2000-11-28 2004-02-03 International Business Machines Corp. Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US7129178B1 (en) * 2002-02-13 2006-10-31 Cypress Semiconductor Corp. Reducing defect formation within an etched semiconductor topography
JP4153708B2 (ja) * 2002-03-12 2008-09-24 東京エレクトロン株式会社 エッチング方法
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US6706640B1 (en) * 2002-11-12 2004-03-16 Taiwan Semiconductor Manufacturing Co., Ltd Metal silicide etch resistant plasma etch method
DE10318568A1 (de) * 2003-04-15 2004-11-25 Technische Universität Dresden Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
US7078337B2 (en) * 2003-09-30 2006-07-18 Agere Systems Inc. Selective isotropic etch for titanium-based materials
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP2007251034A (ja) * 2006-03-17 2007-09-27 Hitachi High-Technologies Corp プラズマ処理方法
US7718542B2 (en) * 2006-08-25 2010-05-18 Lam Research Corporation Low-k damage avoidance during bevel etch processing
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8507385B2 (en) * 2008-05-05 2013-08-13 Shanghai Lexvu Opto Microelectronics Technology Co., Ltd. Method for processing a thin film micro device on a substrate
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
JP6096470B2 (ja) * 2012-10-29 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103824767B (zh) * 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
US9165785B2 (en) * 2013-03-29 2015-10-20 Tokyo Electron Limited Reducing bowing bias in etching an oxide layer
JP7403314B2 (ja) * 2019-12-26 2023-12-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR20230121424A (ko) 2022-02-11 2023-08-18 삼성전자주식회사 반도체 소자

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US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
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US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US5022958A (en) * 1990-06-27 1991-06-11 At&T Bell Laboratories Method of etching for integrated circuits with planarized dielectric
JP3146561B2 (ja) * 1991-06-24 2001-03-19 株式会社デンソー 半導体装置の製造方法
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5431778A (en) * 1994-02-03 1995-07-11 Motorola, Inc. Dry etch method using non-halocarbon source gases
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TW320749B (https=) * 1994-09-22 1997-11-21 Tokyo Electron Co Ltd
US5736457A (en) * 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization
JP3778299B2 (ja) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5626716A (en) * 1995-09-29 1997-05-06 Lam Research Corporation Plasma etching of semiconductors
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
JPH1098021A (ja) * 1996-09-19 1998-04-14 Seiko Epson Corp 半導体装置の製造方法
US5780338A (en) * 1997-04-11 1998-07-14 Vanguard International Semiconductor Corporation Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits
JPH11186229A (ja) * 1997-12-18 1999-07-09 Toshiba Corp ドライエッチング方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
WO1999057757A1 (en) 1999-11-11
KR100628932B1 (ko) 2006-09-27
US6117786A (en) 2000-09-12
KR20010043324A (ko) 2001-05-25
JP2002514012A (ja) 2002-05-14
JP4758002B2 (ja) 2011-08-24
EP1078395A1 (en) 2001-02-28

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