TW594408B - Positive photoresist composition for far-ultraviolet light exposure - Google Patents

Positive photoresist composition for far-ultraviolet light exposure Download PDF

Info

Publication number
TW594408B
TW594408B TW090103791A TW90103791A TW594408B TW 594408 B TW594408 B TW 594408B TW 090103791 A TW090103791 A TW 090103791A TW 90103791 A TW90103791 A TW 90103791A TW 594408 B TW594408 B TW 594408B
Authority
TW
Taiwan
Prior art keywords
group
cns
ministry
printed
national standard
Prior art date
Application number
TW090103791A
Other languages
English (en)
Chinese (zh)
Inventor
Kenichiro Sato
Kunihiko Kodama
Yutaka Adegawa
Toshiaki Aoso
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW594408B publication Critical patent/TW594408B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW090103791A 2000-02-28 2001-02-20 Positive photoresist composition for far-ultraviolet light exposure TW594408B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000051687A JP4166402B2 (ja) 2000-02-28 2000-02-28 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (1)

Publication Number Publication Date
TW594408B true TW594408B (en) 2004-06-21

Family

ID=18573308

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090103791A TW594408B (en) 2000-02-28 2001-02-20 Positive photoresist composition for far-ultraviolet light exposure

Country Status (3)

Country Link
JP (1) JP4166402B2 (enExample)
KR (1) KR100737253B1 (enExample)
TW (1) TW594408B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4610280B2 (ja) * 2004-09-29 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100330574B1 (ko) * 1997-12-29 2002-11-29 주식회사 하이닉스반도체 2층레지스트용실리콘계공중합체수지와그의제조방법및이수지를이용한레지스트패턴의형성방법
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
JP3844322B2 (ja) * 1998-07-02 2006-11-08 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6291130B1 (en) * 1998-07-27 2001-09-18 Fuji Photo Film Co., Ltd. Positive photosensitive composition

Also Published As

Publication number Publication date
JP2001242626A (ja) 2001-09-07
KR20010088366A (ko) 2001-09-26
KR100737253B1 (ko) 2007-07-09
JP4166402B2 (ja) 2008-10-15

Similar Documents

Publication Publication Date Title
KR101372347B1 (ko) 레지스트 조성물 및 이를 이용한 패턴 형성 방법
KR100535223B1 (ko) 포지티브레지스트조성물
KR100516702B1 (ko) 포지티브감광성조성물
KR100773045B1 (ko) 포지티브 레지스트 조성물
KR100878499B1 (ko) 포지티브 레지스트 조성물
KR100896000B1 (ko) 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
KR20010029715A (ko) 포지티브-작용 포토레지스트 조성물
TWI227377B (en) Positive-type resist composition
KR20070093892A (ko) 포지티브 레지스트 조성물 및 이것을 사용한 패턴형성방법
KR100900468B1 (ko) ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법
EP1300727A2 (en) Positive photosensitive composition
KR101045251B1 (ko) 포지티브 레지스트 조성물 및 상기 레지스트 조성물을 사용한 패턴 형성방법
JP3765440B2 (ja) ポジ型感光性組成物
TW527524B (en) Positive photoresist composition for far ultraviolet exposure
JP4210407B2 (ja) レジスト積層物
TW594414B (en) Positive photoresist composition
JP2002251011A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
TW561316B (en) Positive-type photoresist composition for far violet rays exposure
TW594408B (en) Positive photoresist composition for far-ultraviolet light exposure
TW571179B (en) Positive resist composition
JP3755690B2 (ja) ポジ型感光性組成物
KR100796585B1 (ko) 감방사선성 레지스트 조성물
KR20030023455A (ko) 포지티브 레지스트 조성물
JP2002131916A (ja) 感放射線性樹脂組成物
JP3731776B2 (ja) ポジ型感光性組成物

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees