TW592850B - Niobium alloy powder, anode for solid electrolytic capacitors made therefrom and solid electrolytic capacitor - Google Patents
Niobium alloy powder, anode for solid electrolytic capacitors made therefrom and solid electrolytic capacitor Download PDFInfo
- Publication number
- TW592850B TW592850B TW092122085A TW92122085A TW592850B TW 592850 B TW592850 B TW 592850B TW 092122085 A TW092122085 A TW 092122085A TW 92122085 A TW92122085 A TW 92122085A TW 592850 B TW592850 B TW 592850B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy powder
- niobium alloy
- mass
- solid electrolytic
- niobium
- Prior art date
Links
- 239000000843 powder Substances 0.000 title claims abstract description 45
- 239000003990 capacitor Substances 0.000 title claims abstract description 43
- 229910001257 Nb alloy Inorganic materials 0.000 title claims abstract description 26
- 239000007787 solid Substances 0.000 title claims abstract description 18
- 239000011148 porous material Substances 0.000 claims abstract description 32
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000001186 cumulative effect Effects 0.000 claims abstract description 10
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 10
- 239000010955 niobium Substances 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 239000010937 tungsten Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 239000013589 supplement Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000011163 secondary particle Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 14
- 238000009825 accumulation Methods 0.000 abstract description 4
- 229910000484 niobium oxide Inorganic materials 0.000 abstract description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- -1 container anodes Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241000860832 Yoda Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
- B22F9/22—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds using gaseous reductors
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Powder Metallurgy (AREA)
Description
592850 玖、發明說明: 【發明所屬之技術領域】 本發明係關於銳合金粉末、 容器用陽極及固體電解電容器 餘用此粉末而形成 的固體電解電 【先前技術】 田 垔 較 習知在電解電容器的陽極中多 較少,且價格未穩定等問題。 採用紐粉末,但是卻存在生產 近年,便有加速朝向將埋藏量 多且價廉的鈮,使用於電解電容器之陽極(an〇de)中的趨勢 粉 化 在為製造靜電容較大的電解電容器方面,若將陽極材料的鈮 末粒徑予以變小,便可使製造鈮燒結體時的燒結行動產生變 。具體而言,燒結時的收縮對溫度依存性將變大,同時燒結 體内的空孔則變小。因此,隨著在製造電容器時因加熱爐的溫 度分布而使製品的靜電容產生偏差,陰極中所用導電性樹脂等 的填充將轉為困難。所以’需要粒徑較小,且燒結行動對溫度 依存性較小的鈮粉末。此外,採用鈮粉末的電容器,相較於一 般採用鈕粉的電容器之下,具有潛在漏電流偏大,且高溫下之 特性劣化偏大的問題。 有由在鈕中添加氮、矽、磷、硼等閥作用金屬(valvefuncti〇n metal)粉末所構成的固體電解電容器(譬如參照專利文獻丨)。 此外,有在鈕中添加磷、硫、矽、硼、氮等,而抑制燒結速度 的技術(譬如參照專利文獻2)。 在該等技術中,作為對象粉末之粒子較大,對於以高靜電容 為目標的粒徑較小銳粉末而言,並無法直接採用該等技術。 (專利文獻1) 6 312/發明說明書(補件)/92-11/92122085 592850 美國專利第3 8 2 5 8 0 2號公報(第2攔、第1 3〜1 9行) (專利文獻2 ) 美國專利第4544403號公報(第2攔、第5卜61行) 【發明内容】 本發明乃提供解決鈮電容器之上述問題的鈮合金粉末。本發 明之目的在於提供藉由改善銳合金粉末之燒結行動的溫度依存 性’並提南氧化皮膜的熱安定性,俾製作漏電流較少且高靜電 容之電容器用的鈮合金粉末。此外,本發明之另一目的在於提 供採用此鈮合金粉末的固體電解電容器用陽極及固體電解電容 本發明的鈮合金粉末,係含有:鉬:〇. 〇 〇 2〜2 0質量%、 鉻:0.002〜20質量%、鶴:0.002〜20質量%、構:〇.〇〇2〜5質量%、 硼:0.002〜5質量%中任一種以上,更含有:氫:〇.〇〇5〜〇.1〇質量 °/〇,其餘部分實質由鈮構成,粉體比表面積1〜20m2/g,利用水 銀壓入法(mercury press-in method)進行測量,具有 〇.2nil/g
以上的累積細孔容積,相對於累積細孔容積整體,具丨μιη以下 直徑的細孔容積累積值佔1 〇%以上,具1 〇μπ!以下直徑的細孔容 積佔40%以上。 藉由含有鉬、鉻、鎢在0 · 0 0 2〜2 0質量%、含有磷、硼在〇 · 〇 〇 2〜5 質量%中任一種以上,更含有氫:〇· 0 0 5〜0· 10質量%,便將改善 燒結時的溫度依存度,可獲得適於固體電解電容器製造的鈮合 金粉末。此外,經添加該等元素的鈮合金粉末,可獲得降低漏 電流值的效果。 鉬、絡、嫣、鱗、蝴等各成分的範圍’若偏離上述下限的話’ 312/發明說明書(補件)/92-11 /92122085 592850 將無法獲得燒結時的溫度依存· 仔性抑制效果,反之,若超過上述 上限的話’漏電流將增加’ t容器性能將劣丨。所卩,各成分 範圍將規範如上述。此外1氫控制於適量的鈮合金粉末,沖 屡成形性將獲改善,沖壓後的二次粒子邊界將消失,不致發生 成型體邊緣缺損現象。所以,相条 邗軚於未添加虱的鈮合金粉末之 下’本發明可改善成形性,頗適合實用。 粉體的比表面積最好在1〜20m2/σ。婪泠本& 1 /g。右比表面積低於lm2/g的 話,將僅能製造靜電容較小的電容器;反之,若超過_的 話’ -次粒子將過、細’無法確保當作電容器使用時的耐壓。所 以’在為獲得實用的電容器方面,便將.# J囬使將比表面積限定如上述。 再者,當細孔容積低於〇· 2ml/g,相對於累積細孔容積整體, 1 μπι以下的細孔容積累積低於i 〇%,且w 卜的細孔容積低 於40%的情況時,將發生燒結變為容易進行,造成燒結體表面 積變小(即’電容器靜電容變小)的問題。此外, 面 4疋、、、口的進行, 將發生細孔更加變造成在形成電容器陰極時無法填充導電 性樹脂等問題。另外,細孔容積的測量係採用 μ ®入法。 在上述鈮合金粉末中,若更含氮質量% 〇的话,便可 阻礙依化成處理所產生鈮氧化物中的氧移動,而 枚外長期安定 性、耐熱性,因此頗為適合。. 再者,上述鈮合金粉末乃若一次粒子凝聚的二4 , _ ~ — 人板子平均粒 徑在1 0〜2 0 0 μπι的話,即便一次粒子為細微粒子 ρ μ 仍可維持成 形性。 依照本發明的話,藉由將固體電解電容器中 °° 保用銳合金粉 末的比表面積與細孔分布,調整於一定範圍内,、 从及添加特定 312/發明說明補件)/92-11/92122085 8 ^分,便玎將固體電解電容器燒結時的溫度依存十当 可降低電容器漏電流。所以,採用本發明的鈮合々 勢、it 乂具咼靜電谷、漏電流較小的固體電容器用陽核 電容器。 【實施方式】 以下說明本發明實施形態。 本發明的銳合金粉末之製造可利用CVD裝置等 將鈦 μ ^ 、。、鉬、鎢、磷、硼的各個化合物等混合於 曰田採用氫氣進行還原,而製造鈮合金粉末。
〜次粒子的粒徑與空孔徑,乃藉由控制在CVD M 〜時的原料滯留時間、溫度等、或後續的熱處理 適當粒徑俾具下述粉體特性。粉體之比表面積韵 2〇m2/g。當低於im2/g的話,將僅能製造靜電容 器’反之,.若超過20m2/g的話,一次粒子將過細, 作電容器使用時的耐壓。 再者’累積細孔容積設定在〇.2mi/g以上,並韻 積細孔容積整體,具1 μπι以下之細孔容積的累積右 且具有1 Ομπι以下直徑的細孔容積在4〇%以上。依出 止過於快速地進行燒結而使表面積變小,造成電溶 小的問題發生,亦可防止在電容器的陰極形成時, 電性樹脂等的問題發生。另外,細孔容積的測量係 入法。鉬、鎢、鉻、磷、硼的分析,乃添加氟氫酸 酸)’並在水浴上進行加水分解且利用I CP分析裝j (實施例) 312/發明說明書(補件V92-11 /92122085 變小,同時 粉末,便可 及固體電解 '施。原料乃 ‘氣化銳中, 置中進行反 「件,便可控 :定為 較小的電容 無法確保當 定為對於累 • 10 %以上, :的話,便防 -器靜電容變 無法填充導 ,採用水銀聲 轉硝酸(或破 £進行分析。 9 以下,舉實施例說明本發明的具體例。 鈮原料乃採用五氣化銳,經氮還原而製作銳合金粉末。此時, t原料中添加鉑、鶬等氣化物,俾調整成分。然I,在氬氣 :燒中’知行8 0 0〜1〇 〇(TC的熱處理,俾控制粉末的粒徑、細孔 、抓用此鈮合金粉末製成顆粒’並依下述方法製作固 解電容器。 电 在〇.lg銳合金粉末令,土里藏入陽極中所採用白h〇.3mm之銳 線材,沖壓成形為總體密度3〇〇〇kg/m3而製成顆粒。所製成的 員米在爐内壓1 x 10 3pa環境中,於11 〇〇〜1 40 0°c下進行燒結。 將此經燒結後的顆粒浸漬於"質量%的磷酸水溶液中,施加 2°V電壓4小時,而產生化成皮膜。 、後在4〇質1 %的硫酸溶液中,施行鈮電容器的靜電容測 里及漏電"IL /則里。漏電流係測量施加Η V時在5分鐘後的值, 靜電容係測量施力σ彳^ V彳色 丨· Μ偏壓之狀態下的120Hz值。對測量結果 依CV值進行評估。該等結果整理於表"。 、° 再者依上述施行化成處理的樣本E_卜E_5、c—κ —5,乃將 另電桎(陰極)材料的聚此略填充於燒結體内部。更於層積著 石反基底與銀基底之後,gB 1^- " °栽於弓丨線框架上,然後封入環氧樹 脂而製成電容器。此電容器的靜電容亦是測量施加i. 5 V偏壓之 肖、下的1 2 0Hz值。圖1所示係實施例與比較例的靜電容(叶) 測量值分布。圖中,E卜F R後叙 係貫施例,C卜C5係比較例。 312/發明說明書(補件)/92-11/92122085 10 (ΐ)
Wet測定*) 漏電流 μλ/ μ¥ 0. 0023 0. 0025 0. 0018 0. 0034 0.0018 0. 0032 0.0017 0. 0285 0. 0324 0.0016 Wet測定*) CV值 > ίχ-, 158400 238000 164000 186000 154000 188000 175000 92000 185000 161000 W 質量% 0.035 寸 LO ◦· H (NI <=> CD 0.035 oo CNI CD 〇* § (=> cz> (NI CO CD 〇 τ-Η CZ5 CD LO r-H CD ◦· CO oa CD 3: 質量% CD CNI ◦ CD S CD 0.052 r—H CZ5 CO cz> CD CD S 〇 g CD 0. 02 0Q 質量% 0.001 0.001 0.001 t—H Q CZ> r—H <NI 1—ί 0.001 0.001 0.001 r—H CD ◦ CZ> 0.001 Oh 質量% 0.001 T-H CD o ◦· o CD CD CO CO 〇 0.001 0.001 r-H 〇> CD 〇 0. 001 OO cd τ—H g ◦ 質量% 0. 001 T—i CD 〇> Q· LO 卜· 0.001 0.001 c CD 0.001 0.001 0. 001 o o 〇> 質量% 0.001 〇〇 in oi 0.001 0.001 r-H o CD d LO CNI CO r-H CD CD ◦· g CD 0.001 0. 001 質量% 5. 23 0.001 τ—Η CD ◦ <〇 0.002 0.001 0.001 OO CO oo LO Csl τ—H CD o CZ) τ—H g CD —次粒 子徑 ε LO CQ oo CO 寸 r-H g t—H C<I CO OO CO cn> s r-H 誌 粉體的比 表面積 b〇 03 ε LO CO r—H r-H CO CO LO cd CO CNJ· 卜 CO LO oi 05 CD CO 00 01 10//m以下的 細孔容積率 οα CO LO § CO LO LO LO CO CO CO CNI ^ {4 5 ^ 卜 ① (NI LO CQ 寸 CNI OO oo OQ CD CO CO LO CO 細孔 容積 ml/g CO LO 〇 CO 寸 CD LO CD l I oo CD cn (NI C) oo i—l CD 却 LO CD LO CO <〇 LO CO CD ◦· 實施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 比較例3 比較例4 比較例5 r—Η I ω CNI ώ CO 1 ω 寸 ώ LO 1 τ—H CNJ ό CO ό γ o LO 1 ο ^哀^--&-^#馇饽客%#鉍0寸4收^嫦「^莨芯?(* S0(N(NI(N6/I l-36/ip}a:)_s^K微/(Νι ε 592850 從顆粒燒結前後的形狀變化所計算得收縮(s h r i n k a g e ) 乃利用控制空孔徑而獲改善。此外,钥、鎢、鉻、罐、糊 含量在既定範圍内的話,收縮的溫度依存性將變小,靜電 容較大,且將抑制漏電流。當該等元素添加超過既定範圍 的情況時,漏電流值將變大。此外,調查採用該等顆粒所 製得電容器的靜電容,結果偏離本發明範圍的樣本,發生 靜電容不足的機率為5 0 %。此可認為藉由顆粒燒結時的收 縮,使空孔產生融接或變小,而無法良好地執行聚0比咯填 充的緣故所致。 【圖式簡單說明】 圖1為實施例與比較例之靜電容測量值分布圖。 12 312/發明說明書(補件)/92-11/92122085
Claims (1)
- 592850 拾、申請專利範圍: 1. 一種銳合金粉末,係含有: 鉬:0 · 0 0 2〜2 0質量°/〇、 鉻:0 · 0 0 2〜2 0質量%、 鎢:0 . 0 0 2〜2 0質量%、 磷:0 . 0 0 2〜5質量%、 硼·· 0 . 0 0 2〜5質量% 中任一種以上,更含有: 氫·· 0 · 0 0 5 〜0 . 1 0 質量 %, 其餘部分實質由鈮構成,粉體比表面積1〜2 0 m2 / g,利用 水銀壓入法進行測量,具有0 . 2 m 1 / g以上的累積細孔容 積,相對於累積細孔容積整體,具1 μ m以下直徑的細孔容 積累積值佔1 0 %以上,具1 0 μ m以下直徑的細孔容積佔4 0 % 以上。 2 .如申請專利範圍第1項之鈮合金粉末,係更含有 氮:0 . 0 0 5〜1質量%。 3 .如申請專利範圍第1項之鈮合金粉末,其中,經凝聚 的二次粒子之平均粒徑係1 0〜2 0 0 μ m。 4 .如申請專利範圍第2項之鈮合金粉末,其中,經凝聚 的二次粒子之平均粒徑係1 0〜2 0 0 μ m。 5 . —種固體電解電容器用陽極,係以申請專利範圍第1 項之鈮合金粉末為原料的燒結體。 6 . —種固體電解電容器用陽極,係以申請專利範圍第2 項之鈮合金粉末為原料的燒結體。 13 312/發明說明書(補件)/92-11/92122085 592850 7. —種固體電解電容器用陽極,係以申請專利範圍第3 項之鈮合金粉末為原料的燒結體。 8. —種固體電解電容器,係將以申請專利範圍第1項之 鈮合金粉末為原料的燒結體,當作電容器内部的陽極而形 成者。 9 . 一種固體電解電容器,係將以申請專利範圍第2項之 鈮合金粉末為原料的燒結體,當作電容器内部的陽極而形 成者。 1 0 . —種固體電解電容器,係將以申請專利範圍第3項 之鈮合金粉末為原料的燒結體,當作電容器内部的陽極而 形成者。 14 312/發明說明書(補件)/92-11/92122085
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002235820A JP2004076063A (ja) | 2002-08-13 | 2002-08-13 | ニオブ合金粉末、固体電解コンデンサ用アノード及び固体電解コンデンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200406271A TW200406271A (en) | 2004-05-01 |
TW592850B true TW592850B (en) | 2004-06-21 |
Family
ID=31884389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092122085A TW592850B (en) | 2002-08-13 | 2003-08-12 | Niobium alloy powder, anode for solid electrolytic capacitors made therefrom and solid electrolytic capacitor |
Country Status (7)
Country | Link |
---|---|
US (1) | US7054142B2 (zh) |
EP (1) | EP1547706A4 (zh) |
JP (1) | JP2004076063A (zh) |
KR (1) | KR20050036967A (zh) |
CN (1) | CN1675013A (zh) |
TW (1) | TW592850B (zh) |
WO (1) | WO2004016374A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007046899B3 (de) * | 2007-09-28 | 2009-02-12 | W.C. Heraeus Gmbh | Stromdurchführung durch Keramikbrenner in Halogen-Metalldampflampen |
WO2013058018A1 (ja) * | 2011-10-18 | 2013-04-25 | 昭和電工株式会社 | コンデンサの陽極体の製造方法 |
US9478360B2 (en) | 2011-12-19 | 2016-10-25 | Show A Denko K.K. | Tungsten capacitor anode and process for production thereof |
JP5613863B2 (ja) * | 2012-06-22 | 2014-10-29 | 昭和電工株式会社 | タングステンコンデンサの陽極体及びその製造方法 |
US9546837B1 (en) | 2015-10-09 | 2017-01-17 | Bh5773 Ltd | Advanced gun barrel |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825802A (en) * | 1973-03-12 | 1974-07-23 | Western Electric Co | Solid capacitor |
US4544403A (en) * | 1984-11-30 | 1985-10-01 | Fansteel Inc. | High charge, low leakage tantalum powders |
DE69127622T2 (de) | 1990-06-06 | 1998-02-12 | Cabot Corp | Tantal- oder niob-basislegierungen |
US5448447A (en) * | 1993-04-26 | 1995-09-05 | Cabot Corporation | Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom |
US6416730B1 (en) * | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
EP1259346A2 (en) * | 2000-03-01 | 2002-11-27 | Cabot Corporation | Nitrided valve metals and processes for making the same |
JP3718412B2 (ja) | 2000-06-01 | 2005-11-24 | キャボットスーパーメタル株式会社 | ニオブまたはタンタル粉末およびその製造方法 |
BR0113215A (pt) | 2000-08-10 | 2005-02-01 | Showa Denko Kk | Pó de nióbio, corpo sinterizado e capacitor usando o corpo |
US6652619B2 (en) * | 2000-08-10 | 2003-11-25 | Showa Denko K.K. | Niobium powder, sintered body thereof, and capacitor using the same |
JP2002134367A (ja) | 2000-10-24 | 2002-05-10 | Dainippon Ink & Chem Inc | タンタル金属粉の多孔質成形体、タンタル電解コンデンサ用陽極素子及びこれを用いたタンタル電解コンデンサ、並びにタンタル電解コンデンサ用陽極素子の製造方法。 |
-
2002
- 2002-08-13 JP JP2002235820A patent/JP2004076063A/ja active Pending
-
2003
- 2003-08-08 KR KR1020057002405A patent/KR20050036967A/ko not_active Application Discontinuation
- 2003-08-08 WO PCT/JP2003/010126 patent/WO2004016374A1/ja not_active Application Discontinuation
- 2003-08-08 EP EP03788057A patent/EP1547706A4/en not_active Withdrawn
- 2003-08-08 CN CNA038188422A patent/CN1675013A/zh active Pending
- 2003-08-08 US US10/523,448 patent/US7054142B2/en not_active Expired - Fee Related
- 2003-08-12 TW TW092122085A patent/TW592850B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20050036967A (ko) | 2005-04-20 |
CN1675013A (zh) | 2005-09-28 |
EP1547706A1 (en) | 2005-06-29 |
WO2004016374A1 (ja) | 2004-02-26 |
US20050280977A1 (en) | 2005-12-22 |
TW200406271A (en) | 2004-05-01 |
EP1547706A4 (en) | 2007-04-18 |
JP2004076063A (ja) | 2004-03-11 |
US7054142B2 (en) | 2006-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Fischer et al. | Electroless deposition of nanoscale MnO2 on ultraporous carbon nanoarchitectures: correlation of evolving pore-solid structure and electrochemical performance | |
TW201306972A (zh) | 製造閥金屬粉末之方法 | |
US6521013B1 (en) | Niobium sintered body for capacitor and replace with process for producing same | |
JP2007257888A (ja) | 固体高分子形燃料電池用酸素極触媒およびそれを用いた酸素還元電極およびそれらの製造方法 | |
CA2658690A1 (en) | Semifinished products with a structured sinter-active surface and a process for their production | |
JP4508945B2 (ja) | 固体電解コンデンサおよびその製造方法 | |
TW592850B (en) | Niobium alloy powder, anode for solid electrolytic capacitors made therefrom and solid electrolytic capacitor | |
Mirzaee et al. | Synthesis of nanoporous copper foam-applied current collector electrode for supercapacitor | |
JP2019529709A (ja) | 3d印刷による電子部品の製造方法 | |
Gao et al. | Diamond nanowire forest decorated with nickel hydroxide as a pseudocapacitive material for fast charging–discharging | |
US20120167716A1 (en) | Manufacturing and Applications of Metal Powders and Alloys | |
JP4834193B2 (ja) | 電極構造体の製造方法、電極構造体およびコンデンサ | |
CN105018772A (zh) | 一种多孔铜或多孔铜合金的制备方法 | |
JP2022530103A (ja) | Ti-Zr合金粉末及びそれを含有するアノード | |
Fu et al. | Highly conductive copper films prepared by multilayer sintering of nanoparticles synthesized via arc discharge | |
JP2017505384A (ja) | 高窒素含有量を有するコンデンサグレードのタンタル粉末の調製方法、その方法により調製したコンデンサグレードのタンタル粉末、並びにタンタル粉末から調製したアノード及びコンデンサ | |
JP5201109B2 (ja) | 電解コンデンサ用多孔質電極の製造方法 | |
JP2004518818A (ja) | コンデンサー陽極のためのタンタル−シリコン基体およびニオブ−シリコン基体 | |
TW200402396A (en) | Niobium powder, anode for solid electrolytic capacitors made therefrom and solid electrolytic capacitor | |
JP2003342603A (ja) | ニオブ粉末及び固体電解コンデンサ | |
JP2010265549A (ja) | コンデンサ用ニオブ粉 | |
JP2009152273A (ja) | 電解コンデンサ用多孔質電極およびその製造方法 | |
WO2003061881A1 (fr) | Poudre de niobium et condensateur a electrolyte solide | |
Gianneta et al. | Formation of porous anodic alumina templates in selected micrometer‐sized areas on a Si substrate. Application for growing ordered Ti nanopillars | |
JPWO2021220975A5 (zh) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |