TW591349B - Photoresist stripping compound and the patterning method by using the same - Google Patents

Photoresist stripping compound and the patterning method by using the same Download PDF

Info

Publication number
TW591349B
TW591349B TW091136631A TW91136631A TW591349B TW 591349 B TW591349 B TW 591349B TW 091136631 A TW091136631 A TW 091136631A TW 91136631 A TW91136631 A TW 91136631A TW 591349 B TW591349 B TW 591349B
Authority
TW
Taiwan
Prior art keywords
photoresist
mentioned
composition
oxide
item
Prior art date
Application number
TW091136631A
Other languages
English (en)
Chinese (zh)
Other versions
TW200411343A (en
Inventor
June-Ing Kil
Heung-Bin Lim
Original Assignee
June-Ing Kil
Heung-Bin Lim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by June-Ing Kil, Heung-Bin Lim filed Critical June-Ing Kil
Application granted granted Critical
Publication of TW591349B publication Critical patent/TW591349B/zh
Publication of TW200411343A publication Critical patent/TW200411343A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW091136631A 2001-09-07 2002-12-19 Photoresist stripping compound and the patterning method by using the same TW591349B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010055136A KR100554964B1 (ko) 2001-09-07 2001-09-07 포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법

Publications (2)

Publication Number Publication Date
TW591349B true TW591349B (en) 2004-06-11
TW200411343A TW200411343A (en) 2004-07-01

Family

ID=27723037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091136631A TW591349B (en) 2001-09-07 2002-12-19 Photoresist stripping compound and the patterning method by using the same

Country Status (2)

Country Link
KR (1) KR100554964B1 (ko)
TW (1) TW591349B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100751919B1 (ko) * 2005-11-18 2007-08-31 램테크놀러지 주식회사 포토레지스트 제거용 조성물 및 이를 이용한 패턴 형성방법
KR100687696B1 (ko) * 2006-08-03 2007-03-02 동신다이아몬드공업 주식회사 절삭날의 세그먼트

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215005A (en) * 1978-01-30 1980-07-29 Allied Chemical Corporation Organic stripping compositions and method for using same
US5988186A (en) * 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法

Also Published As

Publication number Publication date
KR20030021732A (ko) 2003-03-15
KR100554964B1 (ko) 2006-03-03
TW200411343A (en) 2004-07-01

Similar Documents

Publication Publication Date Title
TWI334883B (en) Polymer-stripping composition
JP3410403B2 (ja) ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
US6432622B1 (en) Photoresist stripper composition and method for stripping photoresist using the same
JP3679753B2 (ja) レジスト剥離剤組成物
JP4817579B2 (ja) 欠陥の削減方法
JP2002038197A (ja) ポリマーリムーバー
JP2003076037A (ja) ホトレジスト用剥離液
TW200306348A (en) PH buffered compositions useful for cleaning residue from semiconductor substrates
JPH04350660A (ja) 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法
TW202106867A (zh) 用於半導體基材的清潔組合物
TW201807513A (zh) 間隙塡充組成物及使用低分子化合物之圖案形成方法
JP2017215561A (ja) ギャップフィリング組成物、およびポリマーを含んでなる組成物を用いたパターン形成方法
US6887655B2 (en) Photoresist removing compositions
JPH1184686A (ja) レジスト剥離剤組成物
US7049235B2 (en) Method of manufacturing semiconductor device
KR101522903B1 (ko) 신너 조성물 및 이를 이용한 감광막의 형성 방법
JP5815477B2 (ja) ケイ素含有レジスト下層膜の製膜方法
TW591349B (en) Photoresist stripping compound and the patterning method by using the same
JPH11282176A (ja) フォトレジスト剥離用組成物
JP2004533010A (ja) レジスト除去剤組成物
US11488834B2 (en) Method for forming silicon or silicon compound pattern in semiconductor manufacturing process
KR20090017129A (ko) 포토레지스트 린스용 조성물 및 이를 이용한 포토레지스트패턴 형성방법
TWI665177B (zh) 用於製造積體電路裝置、光學裝置、微機械及機械精密裝置之組成物
KR20010113396A (ko) 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
JP4496631B2 (ja) 電子デバイスの製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent