KR20030021732A - 포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법 - Google Patents
포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법 Download PDFInfo
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- KR20030021732A KR20030021732A KR1020010055136A KR20010055136A KR20030021732A KR 20030021732 A KR20030021732 A KR 20030021732A KR 1020010055136 A KR1020010055136 A KR 1020010055136A KR 20010055136 A KR20010055136 A KR 20010055136A KR 20030021732 A KR20030021732 A KR 20030021732A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
조성물조건 | 피가공물손상여부 | 포토레지스트성레지듀잔류여부 | |
비교예1 | 모노에탄올아민 45.05중량%카텍콜 20중량%탈이온수 34.95중량% | 0 | 0 |
비교예2 | 모노에탄올아민 41.61중량%카텍콜 19.97중량%N-메틸모폴린-N-옥사이드 3.47중량%탈이온수 34.95중량% | △ | 0 |
비교예3 | 모노에탄올아민 54.55중량%카텍콜 19.97중량%N-메틸모폴린-N-옥사이드 9.09중량%탈이온수 9.09중량% | × | × |
비교예4 | 모노에탄올아민 27.03중량%카텍콜 20중량%N-메틸모폴린-N-옥사이드 18.02중량%탈이온수 34.95중량% | × | × |
Claims (10)
- 알칸올아민(alkanolamine), 산화모르폴린(morpholine oxide)계 화합물, 인히비터(inhibitor) 화합물 및 탈이온수를 포함하는 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제1항에 있어서, 상기 조성물은 상기 알칸올아민의 함량이 15 내지 30 중량%이고, 상기 산화모르폴린계 화합물의 함량이 10 내지 30 중량%이고, 상기 인히비터 화합물의 함량이 10 내지 25 중량%이고, 상기 탈이온수의 함량이 10 내지 40 중량%인 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제1항에 있어서, 상기 알칸올아민은 모노메탄올아민(monoethanolamine: MEA) 및 모노이소프로판올아민(monoisopropanolamine)으로 구성되는 그룹으로부터 선택되는 적어도 하나인 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제1항에 있어서, 상기 산화모르폴린계 화합물은 모르폴린-옥사이드(morpholine-oxide : MO), N-메틸모르폴린-옥사이드(N-methylmorpholine-oxide : NMO) 및 N-메틸모르폴린-N-옥사이드(N-methylmorpholine-N-oxide : NMMO)로 구성되는 그룹으로부터 선택되는 적어도 하나인 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제1항에 있어서, 상기 인히비터 화합물은 카테콜(catachol)을 포함하는 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제1항에 있어서, 상기 조성물은 25 내지 45 중량%의 함량을 갖는 디메틸아세트아미드(dimethylacetamide : DMAC) 또는 25 내지 45 중량%의 함량을 갖는 N-메틸-2-피롤린딘(N-methyl-2-pyrrolidone : NMP)을 더 포함하는 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 제6항에 있어서, 상기 조성물은 10 내지 15 cps 정도의 점도를 갖는 것을 특징으로 하는 포토레지스트 스트립핑 조성물.
- 피가공물 상에 포토레지스트를 사용하여 포토레지스트층을 형성하는 단계;상기 포토레지스트층을 사용하는 사진 식각(photolithography)을 수행하여 상기 피가공물을 패턴으로 형성하는 단계; 및상기 청구항 1 기재의 포토레지스트 스트립핑 조성물을 사용하여 상기 피가공물 상에 잔류하는 포토레지스트층을 제거하는 단계를 포함하는 것을 특징으로 하는 패턴 형성 방법.
- 제8항에 있어서, 상기 피가공물은 금속 물질로 이루어지는 금속층인 것을 특징으로 하는 패턴 형성 방법.
- 제9항에 있어서, 상기 금속 물질은 Al, Cu, Mo, W, Ti, TiN 또는 W-실리사이드인 것을 특징으로 하는 패턴 형성 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010055136A KR100554964B1 (ko) | 2001-09-07 | 2001-09-07 | 포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법 |
TW091136631A TW591349B (en) | 2001-09-07 | 2002-12-19 | Photoresist stripping compound and the patterning method by using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010055136A KR100554964B1 (ko) | 2001-09-07 | 2001-09-07 | 포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030021732A true KR20030021732A (ko) | 2003-03-15 |
KR100554964B1 KR100554964B1 (ko) | 2006-03-03 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020010055136A KR100554964B1 (ko) | 2001-09-07 | 2001-09-07 | 포토레지스트 스트립핑 조성물 및 이를 사용한 패턴 형성방법 |
Country Status (2)
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KR (1) | KR100554964B1 (ko) |
TW (1) | TW591349B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100687696B1 (ko) * | 2006-08-03 | 2007-03-02 | 동신다이아몬드공업 주식회사 | 절삭날의 세그먼트 |
US7569336B2 (en) * | 2005-11-18 | 2009-08-04 | Ram Technology Co., Ltd. | Composition for removing photoresist and method of forming a pattern using the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4215005A (en) * | 1978-01-30 | 1980-07-29 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US6268323B1 (en) * | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
JP2001183849A (ja) * | 1999-12-27 | 2001-07-06 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
-
2001
- 2001-09-07 KR KR1020010055136A patent/KR100554964B1/ko not_active IP Right Cessation
-
2002
- 2002-12-19 TW TW091136631A patent/TW591349B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569336B2 (en) * | 2005-11-18 | 2009-08-04 | Ram Technology Co., Ltd. | Composition for removing photoresist and method of forming a pattern using the same |
KR100687696B1 (ko) * | 2006-08-03 | 2007-03-02 | 동신다이아몬드공업 주식회사 | 절삭날의 세그먼트 |
Also Published As
Publication number | Publication date |
---|---|
TW200411343A (en) | 2004-07-01 |
KR100554964B1 (ko) | 2006-03-03 |
TW591349B (en) | 2004-06-11 |
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