TW583450B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- TW583450B TW583450B TW091104094A TW91104094A TW583450B TW 583450 B TW583450 B TW 583450B TW 091104094 A TW091104094 A TW 091104094A TW 91104094 A TW91104094 A TW 91104094A TW 583450 B TW583450 B TW 583450B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- signal line
- crystal display
- display device
- reflective electrode
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 68
- 239000010408 film Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000003086 colorant Substances 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 2
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 26
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 26
- 229910004444 SUB1 Inorganic materials 0.000 description 26
- 229910004438 SUB2 Inorganic materials 0.000 description 19
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 19
- 101150018444 sub2 gene Proteins 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 239000002253 acid Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910018904 PSV1 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OSDXSOSJRPQCHJ-XVNBXDOJSA-N methyl 3-(3,4-dihydroxyphenyl)-3-[(E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxypropanoate Chemical compound C=1C=C(O)C(O)=CC=1C(CC(=O)OC)OC(=O)\C=C\C1=CC=C(O)C(O)=C1 OSDXSOSJRPQCHJ-XVNBXDOJSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- YNKVVRHAQCDJQM-UHFFFAOYSA-P diazanium dinitrate Chemical compound [NH4+].[NH4+].[O-][N+]([O-])=O.[O-][N+]([O-])=O YNKVVRHAQCDJQM-UHFFFAOYSA-P 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910018888 PSV2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FHNINJWBTRXEBC-UHFFFAOYSA-N Sudan III Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC(C=C1)=CC=C1N=NC1=CC=CC=C1 FHNINJWBTRXEBC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001066574A JP3839268B2 (ja) | 2001-03-09 | 2001-03-09 | 液晶表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW583450B true TW583450B (en) | 2004-04-11 |
Family
ID=18925041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091104094A TW583450B (en) | 2001-03-09 | 2002-03-06 | Liquid crystal display device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6657682B2 (enExample) |
| JP (1) | JP3839268B2 (enExample) |
| KR (1) | KR20020072197A (enExample) |
| CN (1) | CN1183505C (enExample) |
| TW (1) | TW583450B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002296618A (ja) * | 2001-03-29 | 2002-10-09 | Nec Corp | 液晶表示装置およびその製造方法 |
| KR101006436B1 (ko) * | 2003-11-18 | 2011-01-06 | 삼성전자주식회사 | 표시 장치용 박막 트랜지스터 표시판 |
| TWI234011B (en) * | 2004-01-16 | 2005-06-11 | Hannstar Display Corp | Active color filter on array structure, manufacturing method thereof, and color LCD device including active color filter on array |
| JP4752499B2 (ja) * | 2005-12-26 | 2011-08-17 | セイコーエプソン株式会社 | 反射型液晶表示基板の製造方法及び反射型液晶表示装置の製造方法 |
| WO2007119454A1 (ja) * | 2006-03-30 | 2007-10-25 | Sharp Kabushiki Kaisha | 表示装置およびカラーフィルタ基板 |
| CN100432813C (zh) * | 2006-12-22 | 2008-11-12 | 北京京东方光电科技有限公司 | Tft lcd及其制造方法 |
| JP2011048170A (ja) * | 2009-08-27 | 2011-03-10 | Hitachi Displays Ltd | 液晶表示装置 |
| US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
| KR101878878B1 (ko) * | 2011-09-06 | 2018-08-20 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
| CN104793414B (zh) * | 2014-01-17 | 2017-11-17 | 群创光电股份有限公司 | 液晶显示面板 |
| KR102459575B1 (ko) * | 2016-01-06 | 2022-10-27 | 삼성디스플레이 주식회사 | 표시 장치 |
| US20240014218A1 (en) * | 2020-11-17 | 2024-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07244297A (ja) | 1994-03-07 | 1995-09-19 | Hitachi Ltd | 液晶表示装置 |
| US5668649A (en) | 1994-03-07 | 1997-09-16 | Hitachi, Ltd. | Structure of liquid crystal display device for antireflection |
| JP3027541B2 (ja) * | 1995-09-27 | 2000-04-04 | シャープ株式会社 | 液晶表示装置 |
| JP4089843B2 (ja) | 1998-05-26 | 2008-05-28 | カシオ計算機株式会社 | 液晶表示装置 |
| KR100330363B1 (ko) * | 1999-03-18 | 2002-04-01 | 니시무로 타이죠 | 액티브 매트릭스형 액정표시장치 |
-
2001
- 2001-03-09 JP JP2001066574A patent/JP3839268B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-14 US US10/073,965 patent/US6657682B2/en not_active Expired - Lifetime
- 2002-03-05 KR KR1020020011575A patent/KR20020072197A/ko not_active Ceased
- 2002-03-06 TW TW091104094A patent/TW583450B/zh not_active IP Right Cessation
- 2002-03-08 CN CNB02106931XA patent/CN1183505C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1374633A (zh) | 2002-10-16 |
| US20020126239A1 (en) | 2002-09-12 |
| KR20020072197A (ko) | 2002-09-14 |
| JP3839268B2 (ja) | 2006-11-01 |
| JP2002268060A (ja) | 2002-09-18 |
| US6657682B2 (en) | 2003-12-02 |
| CN1183505C (zh) | 2005-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100440017C (zh) | 液晶显示器及其制造方法 | |
| JP5703208B2 (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
| CN100428037C (zh) | 液晶显示器件及其制造方法 | |
| JP5456980B2 (ja) | 液晶表示装置、及びその製造方法 | |
| KR100212284B1 (ko) | 채널 보호형 박막 트랜지스터 기판 | |
| US7876412B2 (en) | Thin film transistor array panel and method for manufacturing the same | |
| KR101112539B1 (ko) | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 | |
| US20110136274A1 (en) | Liquid crystal display device and method for fabricating the same | |
| JP4999875B2 (ja) | 多重ドメイン液晶表示装置 | |
| KR101112543B1 (ko) | 다중 도메인 박막 트랜지스터 표시판 | |
| KR20060136287A (ko) | 액정 표시 장치 및 그 제조 방법 | |
| KR101112540B1 (ko) | 다중 도메인 박막 트랜지스터 표시판 | |
| KR20060073826A (ko) | 박막 트랜지스터 표시판 | |
| TW583450B (en) | Liquid crystal display device | |
| KR20060084019A (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 | |
| JP2006023744A5 (enExample) | ||
| KR20060036636A (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 | |
| KR20060070349A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
| KR101251993B1 (ko) | 박막 트랜지스터 표시판 | |
| KR20060060338A (ko) | 박막 트랜지스터 표시판의 제조 방법 | |
| KR20060020892A (ko) | 박막 트랜지스터 표시판 및 그의 제조 방법 | |
| KR20060060335A (ko) | 박막 트랜지스터 표시판 및 이의 제조 방법 | |
| KR20060057357A (ko) | 액정 표시 장치 | |
| KR20070008870A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
| KR20060018402A (ko) | 다중 도메인 박막 트랜지스터 표시판 및 이를 포함하는액정 표시 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |