TW581670B - Implanted sensor processing system and method for processing implanted sensor output - Google Patents
Implanted sensor processing system and method for processing implanted sensor output Download PDFInfo
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Description
581670
本發明係關於處理植入感測裝置之輸出之電路及方法, 該植入感測裝置用以偵測於液態或氣態介質例如於人體之 被分析物的存在或濃度。特別本發明係關於一種處理植入 螢光感測器輸出之電路及方法,該植入螢光感測器係呈螢 光才曰示器之螢光強度之函數變化而指示被分析物濃度。植 =螢光感測器爲被動裝置且不含電源。處理電路透過處理 黾路發射的感應_合射頻能供電給感測器。處理電路係呈 處理電路之負載變化而接收來自植入感測器的資訊。 背景技藝 美國專利5,517,313(其揭示以引用方式併入此處)説明一 種營光感應裝置,包含含有螢光指示器分子母質(後文稱 作「螢光母質」)、高通濾波器以及光電偵測器之疊層陣 列。此種裝置中,光源較佳爲發光二極體(「LED」)至少 部分位在指示器材料内,因此來自光源的入射光造成指示 器分子發螢光。高通濾波器允許發射光到達光電偵測器, 同時滤波去除來自光源的散射入射光。允許被分析物滲透 通過螢光母質,與被分析物的存在量成比例地變更指示器 物料螢光性質。然後藉光電偵測器偵測且測量螢光發射, 如此提供存在於感興趣環境内部之被分析物含量或濃度測 量値。 ς 3 13號專利案揭示的該型感測器裝置之一項有利應用係 將裝置經皮下或靜脈或其它部位植入體内,允許於任何期 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公董)
裝 訂 f 581670 A7 B7 五、發明説明(2 ) 望時間即時測量被分析物。例如於麻醉中病人可能希望測 量血氧濃度或測量糖尿病病人的血糖濃度。 爲了使用所得測量資訊,該測量資訊係由感測裝置擷 取。由於植入體内的感測裝置的大小以及近接能力限制, 發生對感測裝置設置資料傳輸電路及/或設置電源的相關 缺點。因此業界需要有植入體内的改良感測裝置以及由植 入感測裝置擷取資料改良系統。 發明概要 根據本發明,提供一種擷取來自感測器裝置之資訊之裝 置,該裝置包含一個内部感測器單元用以做定量被分析物 測量,孩内部感測器單元包括第一線圈構成感測器單元之
理該等資訊信號。 簡單説昍 本發明將參照後文較佳具體實施例之詳 獲得更完整了解,附圖僅供舉例説明之用 本發明,附圖中·· 之詳細説明結合附圖 之用,如此並非囿限 本紙張尺度適用中國國家標準(CNS) Α4規格(210χ 297公釐5-------- 581670 A7 ------ -Β7____ 五、發明説明(3 ) 圖1爲根據本發明之較佳具體實施例之方塊圖; 圖2爲根據本發明之較佳具體實施例之内部感測器裝置 單元之示意圖; 圖3及4爲波形圖說明於感測器裝置電路各點之信號波 形; 圖5A-5E爲藉外部資料接收單元產生的信號圖; 圖6爲根據本發明之可植入之基於螢光的感測器之示意 剖面圖; 圖7馬圖6所示基於螢光之感測器之示意圖舉例說明感測 器之波導性質; 圖8爲圖6之電路部分之細節圖,驗證於感測器本體内部 之内邵反射及感測器/組織界面層之較佳構造; 圖9爲根據本發明之第二較使养體實施例之内部感測器 裝置之示意圖;以及 圖10爲時序圖,顯示圖9比較器之各終端的電壓位準通 過其操作係呈偵測器電路週期。 藍隹具體實施例之詳細説明 圖1顯示根據本發明之植入螢光感測器處理系統之較佳 具體實施例之方塊圖。 系統包括外部單元1〇1及内部單元102。系統之應用例 中,内部單元102可經皮下或其它方式植入個體體内。内 部單70含有光電電路l〇2b,該組件係由螢光感測裝置組 成,後文將參照圖6-8更完整説明。光電電路f〇2b獲得定 量測量資訊,以及呈所得資訊之函數而修改負載1〇2(:。負 -6 - 本纸银尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 B7
載102c又變更流經線圈l〇2d的電流量,線圈1〇2(1係耦合至 外部單元線圈101f。調幅(AM)解調器101b偵測得線圈1〇lf 之藉隸合線圈102d感應的電流變化,且施加偵測得的信號 給處理電路例如脈衝計數器l〇lc及電腦介面1〇1〇1用以將信 號處理成爲電腦可讀格式用以輸入電腦l〇le。 可變射頻振盪器101a提供射頻信號給線圈1〇lf,當線圈 101f及102d彼此位在緊鄰附近時,線圈1〇lf又提供電磁能 給線圈102d俾允許線圈間有足夠感應耦合。來自射頻信^ 的能量提供内部單元102的操作電力用以獲得定量測量, 定量測量値用以變更負載l〇2c,又提供負載變更給線圈 l〇lf ’線圈藉外部單元偵測且解碼成爲資訊。負載變化係 經由線圈10 If與102d間的交互耦合而由内部單元镇合至外 部單元。負載可經由調諧内部線圈與外部線圈至約略相等 頻率,以及藉適當構造技術提高諧振電路的Q因素而予改 良。由於其交互耦合,故一線圈的電流變化感應另一線圈 的电λπ ι»。感應電流經偵測且被解碼成爲對應資訊。 射頻振蓋器101a驅動線圈l〇if ’線圈感應線圈 的電流。感應電流藉整流器電路l〇2a整流且用以供電光電 裝置102b。光電裝置以脈衝串列形式產生資料,脈衝串列 之頻率係隨螢光感測器發光強度之函數變化,例如前 述’ 313專利案所述。脈衝串列調變負載102c,調變方式係 讓整流器輸出端子暫時短路接地。此種負載變化造成通過 内邵線圈102d電流的對應變更,因而引起對應外部線圈 101 f的磁場變化。此種磁場變化造成跨線圈丨〇丨f電I的成 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 581670 A7
下式說明外部線圈電壓: ⑴ 比例改變,觀察得呈調幅改變 V=I[Z + ((coM)2)/Zs] 此處V =跨外部線圈電壓 1=外部線圈電流 z=—次線圈阻抗 ω=頻率(弧度/秒) Μ =線圈間的交互電感 Z s =感測器相當電路的阻抗 如式⑴所示,跨外部線圈的電壓與内部感測器線圈呈 抗間有直接關係。雖,然阻抗以爲複合數有實數部分 虛數部分,纟分別對應於振蓋信號的振幅及頻率變化,但 本發明系統僅處理交互作用的實數部分。業界人士須了解 經由適當修改外部電路可偵測兩型交互作用俾改善信號對 圖2顯示根據本發明之内部感測器裝置單元之具體實施 例心7TT意圖。線圈102d(Ll)結合電容器C1、二極體〇1(整 流器102a)、增納二極體02及電容器c 2構成内部單元1〇= 之電源供應器。於線圈L1藉振盪器101&(參考圖丨)施加至 外邵線圈101 f之射頻電壓感應的電流係於線圈L丨及電容器 c 1形成的L_c槽諧振,係藉二極體D i整流,以及係藉電容 器C 2濾波。設置增納二極體d 2以防止施加至電路的電壓 超過取大値例如5伏。如業界人士已知,若跨電容器〔2的 電壓開始超過增納二極體D 2的逆崩潰電壓,則二極體〇 2 將開始於逆崩潰區導電,防止電容器C 2相對於電路的最大 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 581670 A7 B7 五、發明説明(6 ) 容許電壓被過充。 電壓調節器205接收來自電容器C2的電壓,且產生固定 輸出電壓Vref至操作放大器201之非反相輸入。操作放大器 201之輸出端子連接至發光二極體(LED)202,發光二極體 202串聯連結反饋電阻器R1。操作放大器201之反相輸入端 子被供給跨R 1的電壓,藉此調整流經LED 202的電流至 Vref/R 1(忽略小偏壓電流)。LED 202發射的光入射於感測 器裝置(圖中未顯示),造成感測器裝置呈欲監視的特定被 分析物數量之函數而發光。來自感測器裝置之光衝擊感光 電阻器203,其電阻隨入射於感光電阻器之光數量之函數 變化。感光電阻器203串聯連結電容器C 3,感光電阻器203 與電容器C3的接合連接至比較器204的反相輸入端子。感 光電阻器203之另一端經由導體ye()mp連接至比較器204之輸 出端子。比較器204之輸出也連接至負載電容器C4以及電 阻器網路R 2、R 3及R 4。比較器形成可變電阻振盪器,切 換點係由R2、R3及R4値決定。C3爲充電電容器,其決定 振盪器對某個指定光位準的基底頻率。此種頻率表示爲 f=l/(1.38*Rphoto*C3) (2)
Rphoto=R2fc[10'Ylog(a/2fc] (3) 此處R2fe(=24千歐姆)爲感光電阻器203於2呎濁的電阻 γ(=0·8)爲感光電阻器的靈敏度 a =入射光位準,以叹燭表示 式(3)可顚倒而決定光對指定感光電阻的強度;結合式 (2),可由頻率測定光強度。當然上列數値僅供舉例説明之 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 B7 五、發明説明(7~) — 用。此等數値係基於使用的特定感光電阻器幾何及材料決 定。 當 Vtime=V/3,Vcomp=V 以及 Vtrip=2V/3 時,比較器 204 切換至高輸出。電容器C 3開始充電,具有時間常數 Rphoto*Ctime。當Vtime達到2V/3時,比較器切換成低輸出 態,變更Vcomp成爲Vcomp=0,以及變更vtrip成爲 Vtdp=V/3。此時C 3將經由Rphoto放電。因此建立50%負載 循環,頻率由式(2)決定。Rph〇t〇隨入射光函數而改變,如 式(3)所示。 C 4爲負載黾谷器,當比較器切換輸出態時,匚4造成跨 C 2電壓的改變。當比較器2〇4切換成高輸出位準態時,匸4 由0V改變成Vdc。通過C4的電流由C2供給,造成跨C2的 電壓降低。如此又造成電流流綠整流器1〇2a,開始充電電 容器C 2,改變包括内部線圈1〇2d的槽電路的瞬間負載。 此種負載反應成爲外部線圈101f的阻抗,如式(1)所示。 單一脈衝之感應器操作舉例説明於圖3。通道4爲C2的直 泥電壓,通道3顯示於外部線圈1〇lf的相同脈衝,通道二顯 tf A Μ解调器輸出。通道丨顯示比較器輸出,比較器將賴 解調2輸出轉成方波,方波可藉數位計數器處理。圖4顯 示一疋整操作循環,相同通道標示表示電路的相同點。 外部單元101使用微處理器作爲脈衝計數器1〇lc。當接 收足夠資料而獲得有效讀値時,處理器關閉射頻振盪器。 圖从-5E說明測量讀値之時序圖。圖5A顯示施加於外部線 圈〈射頻%壓仏號波封;圖5B顯示内部電源供應器電壓波 -10-
A7
形,圖5(:顯示1^〇 202強度波形;圖51:)顯示八1^解調器 1〇lb輸出;以及圖5E顯示根據供給感測器單元之功率之 :路操作態之時序。内部單元電源供應器隨著場強度的升 冋而提鬲。當電源供應器輸出跨過led閾電壓加反饋電壓 時’ LED被點亮。A M解調器輸出含有呈I 〇碼形式的測量 資料及數位資料以及其它内部單元植入體内的個體參數。 本資料經由光電輸出與數位ID以及參數儲存電路(圖中未 顯示)的分時多工而編碼於射頻電壓信號。數位電路使用 射頻電壓產生適當時脈信號。 内儲存電路儲存I D碼及參數値例如較準常數。此項資 訊連同各個讀取或定量測量値送返。信號係於測量順序的 預疋點經由從類比脈衝串列負載切換成以數位方式控制的 負載而依照時序送出。此種測糞順序的預定點係於外部單 元經由偵測輸出資料流的預定位元同步化圖樣偵測。j D 編號用來識別特定個體,以及當兩個個體位在該外部單元 附近時防止資料訛誤。校準因素施加於測量資訊而獲得臨 床單元之被分析物濃度。 根據本發明之一特徵方面之感測器10顯示於圖6,該感 測器係基於螢光指示器分子的螢光操作。感測器1 0之組成 如下:一個感測器本體12 ; —層母質層14塗層於感測器本 體12外表面上,螢光指示器分子16分布於該層;發射輻射 的輻射來源1 8例如LED包括與該指示器分子交互作用的波 長或波長範圍的輻射,換言之,以基於螢光的感測器爲 例,爲造成指示器分子16發螢光的波長或波長範圍;以及 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 581670 A7 一丨_________B7 五、發明説明(9 ) 一個感光7C件20例如光偵測器,以基於螢光之感測器爲 例,光偵測器係對指示器分子丨6發射的螢光敏感,因此回 應於此產生的仏號指示指示器分子的螢光位準。感測器i 〇 進一步包括谷納電路的模組或殼體66,以及提供溫度讀値 的溫度感測器64。於最簡單具體實施例中,指示器分子16 單純塗布於感測器本體表面上。但較佳具體實施例中,指 π器分子容納於母質層14内部,母質層包含根據業界已知 方法製備且塗覆於感測器本體表面的生物相容聚合物母 質。適當生物相容母質材料須爲可透過被分析物,母質材 料包括甲基丙晞酸酯類及水凝膠類其可製作成可選擇性滲 透被分析物。 感測器本體12較佳係由適當透光聚合物料形成,該聚合 物料之折射指數與介質的折射指數有足夠差異,故感測器 使用時聚合物將作爲光波導。較佳材料爲丙烯酸系聚合物 例如聚甲基丙晞酸甲酯、聚甲基丙烯酸羥丙酯等,以及聚 碳酸醋類例如以商品名萊森(Lexan(g))出售之聚碳酸酯。材 料允許輕射來源1 8產生的輻射(例如於輻射來源爲LED之例 中於適當波長的光)以及於基於螢光之具體實施例中,指 不器分子發射的螢光行進通過其中。輻射來源或LED 18對 應於圖2所示LED 202。 如圖7所示,輻射(例如光)係由輻射來源丨8發射,至少部 分輻射係於感測器本體12表面例如於位置22内部反射,因 此於感測器本體12内部來回「彈跳」。 發現由感測器本體與周圍介質界面反射的光可於塗在表 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 B7 五、發明説明(10 ) 面上的指示器分子交互作用(無論是否直接塗層於其上或 3於母質内部),例如於塗層於表面的螢光指示器分子激 發勞光。此外,撞擊界面的角度(相對於界面法線方向測 I角度)太小而無法反射的光通過界面,也於勞光指示器 刀子激發螢光。光(或其它輻射)與界面以及指示器分子間 父互作用的其它模式也可依據感測器的構造及應用使用。 此等其它模式包括憂花一現的激發以及表面電漿共振型激 發。 如圖8驗證,至少部分螢光指示器分子16發射的光進入 感測器本體12,係直接進入或由母質層μ最外表面(相對 於感測器本體12之最外表面)反射後進入感測器本體12, 如顯示於區30。然後螢光28於感測器本體12内部反射,遠 類似由螢光來源18發射的輻射、,類似螢光來源發射的輻 射,某些螢光撞擊感測器本體與周圍介質間界面的角度過 小無法被反射則將通過感測器本體送出。 如圖6進一步舉例説明,感測器1〇包括介於感測器本體 外表面與母質層14間,形成於感測器本體12末端之反射塗 層32俾讓螢光指示器分子發射的輻射及/或光之内部反射 增至最大或提升。反射塗層例如可由塗料或金屬化材料製 成。 光濾波器34較佳設置於感光材料製造的光偵測器2〇之感 光面上。光偵測器20相當於圖2顯示的光偵測器2〇3。光濾 波器34如先前技藝已知,可防止或實質上減少輻射來源& 產生的輕射衝擊感光元件20之感光面。同時,濾波器允許 -13- 581670 A7 _____B7___ 五、發明説明(11 ) 勞光指示器分子發射的螢光通過其中撞擊彳貞測器之感光 區。如此顯著減少光偵測器信號中歸因於來自輻射來源18 之入射輻射的「雜訊」。 根據本發明之一特徵方面,特別發展感測器1 〇之應用, 但絕非其唯一適合的用途,係測量人體多種生物被分析 物,例如葡萄糖、氧氣、毒素、藥品或其它藥物、激素及 其它代謝被分析物。母質層14及指示器分子16之特定組成 係依據感測器欲偵測的特定被分析物改變,及/或欲用於 偵測該被分析物之感測器位置改變(例如於血液或於皮下 組織)。但有兩項恆定要求爲母質層14輔助指示器分子暴 露於被分析物,以及指示器分子之光學特性(例如螢光指 示器分子之螢光位準)爲該指示器分子所暴露的特定被分 析物濃度之函數。 爲了有助於使用於人體,感測器1 〇較佳成形爲光滑、橢 圓或圓化形狀。較佳其具有豆狀或醫藥明膠膠囊劑的約略 大小及形狀,換言之,長度L約300-500微米至約0.5对, 深度D約300微米至約〇.3吋,表面概略光滑圓化。裝置當 然可依據使用的材料以及該裝置的預期用途而增大或縮 小。此種構型允許感測器1〇植入人體内,換言之植入皮内 或皮下組織(包括植入器官及血管),而感測器不會干擾重 要身體功能或引發過度疼痛或不適。 此外須了解置於人體(或其它動物體)内部的任何植體, 即使爲由「生物相容」材料製成,也將單純由於植體的存 在構成刺激而對該植體所插入的有機體構成「異體反 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 B7
應」。以植入人體的感測器10爲例,「異禮反應」最常爲 纖維包囊,換言之,形成绝痕組織。1萄糖爲本發明威測 器預期用於偵測的主要被分析物,葡萄糖之擴散速㈣運 輸受到此種纖維包囊阻礙。即使分子氧(02)極小,分子氧 的擴散速率或輸送仍然受到此種纖維包囊阻礙。單純原因 在於形成纖維包囊(疤痕組織)的細胞本質相當緻密,或具 有與正常組織代謝特性不同的代謝特性。 爲了克服此種潛在阻礙或指示器分子暴露於生物被分析 物的延遲,意圖採用兩大辦法。根據一種辦法,其或許爲 最簡單辦法,感測器/組織界面層係由一種極少引發或引 發纖維包囊程度可接受的材料製成,該感測器/組織界面 層於指示器分子直接制動於感測器本體表面時係覆於感測 器本體表面上及/或指示器分子本身上,或當指示器分子 容納於母質層内部時覆於母質層14表面上。於參考文獻敘 述具有此種特性之材料之二例爲皮庫德(Preclude)心包膜得 自巫萊高爾(W.L· Gore);以及聚異丁烯共價組合親水基 團,述於Kennedy Γ裁剪聚合物供生物使用」,肯泰克 (Chemtech)公司,1994年 2 月 24-31 頁。 另外’由數層特化生物相容材料組成的感測器/組織界面 層"T &供於感測器上。例如如圖8所示,感測器/組織界面 層36包括三亞層36a、36b及36c。亞層36a爲促進組織向内 生長層’亞層36a較佳爲允許微血管37穿透入其中的生物 相容材料,甚至微血管呈纖維細胞39(疤痕組織)累積於其 上。高泰斯(Gore-Tex®)血管移植材料(ePTFE)、達克龍 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 B7 五、發明説明(13 ) (Dacron®)(PET)血管移植材料已經使用多年以及高密度聚 乙烯(得自波瑞斯(POREX)手術公司)的玫達波(MEDp〇R)生 物材料屬於此等材料範例,該等材料的基板組成、孔隙大 J以及孔隙未構可促成組織及血管向内生長入組織向内生 長層。 —匕方面,亞層36b較佳爲相容層,其孔徑(小於5微米)顯 耆小於組織向内生長亞層36a的孔徑俾防止組織向内生
長。目則製造亞層36b之較佳材料爲膨脹聚四氟乙烯 (ePTFE)製成的得自巫萊高爾公司之皮庫德心包膜(前名高 泰斯手術膜)。 裝 第三亞層36c作爲分子篩換言之,其提供分子量截留功 能,排除免疫球蛋白、蛋白質及糖蛋白等分子,同時允許 感興趣的被》析物通過纟中至指# $分子(指#器分子係 直接塗層於感測器本體12上或制動於母質層14内部)。多 種眾所周知的纖維素類薄膜,例如科腎臟透析過滤卡匿 的該種膜可用於分子量截留層36(:。 t 如-般了解,圖6所示感測器全然爲自容式,因此並』 電引線伸人或伸出感測器本體之外,電引線係供電給❸ 器(例如驅動輻射來源18)或傳輸來自感測器的信號。圖2户」 示全部電子裝置可繞於模組66内部,如圖6所示。 本發明之第二較佳具體實施例顯示於圖9,其中採用成 部偵測器’亦即信號通道偵測器9〇1以及參考通道侦測; 902。圖2所示第_具體實施例中,使用單_偵測器^ 測來自螢光指示器感測器裝置的#射。雖然此㈣统的$ 16-
581670
果良好,⑮系統可能發生多項干擾而影響原 輸出的準確度。 先校準感測器 此等干擾例如包括:感測器組成組件操作的變化戋飄 移;感測器外部環境條件·,或其組合。内部變數可能因; 列因素而引進,此等因素包# :感測器輕射來源老化;影 響感光元件效能或靈敏度的變化;指示器分子的分解劣 化,感測器本體、指示器母質層等的輻射透射率改變;以 及其它感測器組件變化等。其它例中,光學參考通道也可 用來補4貝或校正環境因素(例如感測器外部因素),該等環 境因素無論是否存在有被分析物或被分析物濃度如何,皆 影響指示器分子的光學特性或表觀光學特性。就此方面而 言,外部因素例如包括:溫度;pH ;存在的周圍光線; 感測器施用於其中的介質反射率或濁度等。光學參考通道 可用以補償感測器操作條件的此等變化。參考通道各方面 係與信號通道完全相同,但參考通道未對測量的被分析物 產生回應。 參考通道用於光學測量的用途爲業界概略已知。例如美 國專利第3,612,866號(其全體揭示以引用方式併入此處)説 明一種螢光氧氣感測器,其具有參考通道含有與測量通道 相同的指示器化學,但參考通道塗覆以清漆而變成不透 氧。 美國專利第4,861,727及5,190,729號(其全體揭示以引用方 式併入此處)説明氧感測器,採用兩種不同之以鑭系元素 爲基礎的指示器化學發射兩種不同波長光,換言之,一種 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱)
装 訂 脅 581670 A7 _____Β7 五、發明説明(15 ) 基於铽的指不器可藉氧淬熄,以及一種基於銪的指示器大 半不受氧影響。美國專利第5,094,959號(其全體揭示併述 於此以供參考)說明一種氧感測器,其中單一指示器分子 於某種波長被照射,該分子發射的螢光係於兩種對氧具有 不同敏感度的不同發射光譜測量。特別對氧較不敏感的發 射光譜用作爲參考而求出兩種發光強度比。美國專利第 5,462,880及5,728,422號(其全體揭示以引用方式併入此處) 説明一種比例計量螢光氧感測方法,該方法採用大致不受 氧影響的參考分子,其光分子速率類似指示器分子。此外
Muller,Β.等人,分析,121 期,339-343 頁(1996年3 月), (其全體揭示以引用方式併入此處)説明一種溶解二氧化碳 之螢光感測器,其中LED藍光源被導引通過光纖耦合器至 指示器通道’以及導引至分開參考光偵測器,其偵測led 光強度的變化。 此外,美國專利第4,580,059號(其全體揭示以引用方式併> 入此處)説明一種基於螢光之感測器,其含有參考光測量 單元用以測量激發光源強度,例如參考第丨〇欄第1行及以 下。 如圖9所示,信號及參考通道偵測器爲背對背的光電二 極體901及902。雖然顯示光電二極體,但也可使用多種其 它類型的光偵測器例如感光電阻器、感光電晶體等。LED 903相當於圖2光源202。操作時,比較器904設定爲藉電阻 器905、906及907偏壓的電源供應器電壓vs s的1/3及2/3時 觸發。若有所需比較器904之觸發電壓可藉改變電阻器値 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 581670 A7 B7 五、發明説明(16 ) 修改。電容器C 2爲時序元件,其値係對信號通道及參考通 道振幅調整。流經各個光電二極體之電流爲進入其中之入 射光強度或功率之函數,以方程式I=RP表示,此處 I =電流 R =回應度(安/瓦)以及 P =光功率(瓦) 螢光具體實施例中,撞擊光電二極體偵測器之入射光功率 隨著被分析物濃度而改變。 圖10爲時序圖顯示比較器904之端子904a、904b及904c 之電壓位準。於循環起點,輸出端子904c之電壓位準爲地 電位(低輸出態),電容器C2之電壓位準(相當於輸入端子 904b之電壓位準)爲2/3 Vss,輸入端子904a之電壓位準爲 1/3 Vss。本例中光電二極體901.爲正向偏壓而光電二極體 902爲反向偏壓。跨正向偏壓光電二極體901之電壓降單純 爲其閾電壓,而反向偏壓光電二極體902具有與衝擊其上★ 之入射光成比例的電流。此種電流係以dV/dt=I902/C2放電 電容器C2直到達到1/3 Vss電壓位準,如圖10所示。插入 前述光電二極體電流方程式,獲得方程式dV/dt=RP/C2。 解除P,P=(dV*C2)/(dt*R),此處 dV =比較器觸發點間差異(實例爲1/3 Vss) C2=電容器C2値(法拉第) d t =充電或放電時間(藉外部單元測量)以及 R =光偵測器回應率(安/瓦) 此時,比較器904切換至輸出端子904c的高輸出態Vss。觸 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A7 ______ B7 五、發明説明(17 ) 發點(輸入端子904a)現在係於2/3 Vss,光電二極體901及 902的極性現在顚倒。換言之,光電二極體9〇1現在爲反向 偏壓,而光電二極體902現在爲正向偏壓。 光電二極體901現在以dV/dt=I901/C2速率控制電容器C2 的充電至電容器C2電壓達2/3 Vss。當電容器C2的電壓達 2/3 Vss時,比較器904的輸出再度切換成低輸出態。只要 系統被供電,以及入射光存在於光電二極體時,循環將繼 續重複,如圖10所示。 若各光電二極體偵測器901及902之入射光強度相等,則 比較器輸出將爲50〇/〇負載週期。若各個光電二極體偵測器 的入射光不等,則電容器充電電流將與電容器放電電流不 同。此乃圖10所示情況,其中電容器充電電流係高於電容 器放電電流。由於同一個電容器被充電以及放電,故不同 的充電及放電時間僅因兩個光電二極體偵測器上入射光位 準的差異之函數而改變。結果比較器9〇4產生的方波負貴, 週期指示仏號通道光電二極體上入射光與參考通道光電二 極體上入射光間的變化。適當演繹法則考慮來自比較器的 方波負載週期變化俾決定被分析物濃度概略爲業界已知 (參考前文討論之先前技藝參考文獻)於此處不再贅述。 一旦建JL方波,方波將傳輸至外部單元。傳輸係藉載荷 内部線圈908,然後偵測感應耦合於内部線圈的外部線圈 上負載變化進行。負載係由電阻器91〇供給,電阻器連結 至比較器904之輸出端子904c。當比較器係於高輸出態—· 時,由電壓調節器909取得額外電流Vss/R91〇。當比較器 一 -20-
581670 A7 B7 五、發明説明(18 ) 係於低輸出態時,此種額外電流並不存在。結果電阻器 910作爲負載’其係以被分析物濃度以及參考通道輸出決 定的速率而切入電路以及由電路切出。由於流經電阻器 91 〇的電流係由包括線圈908的内部調諧槽電路提供,故電 阻器負載的切換也切換包括内部線圈9〇8的槽電路上的負 載。由變更負載引發槽電路阻抗的改變係由感應耦合外部 線圈負載之相對變化偵測,討論如前。電壓調節器9〇9去 除線圈置於場内引發的任何效應。LED 903發射指示器分 子感測器之激發光。LED 903之電源係由電壓調節器提 供。重要地於被分析物測量讀取期間須維持LED強度恆 定。一旦電壓調節器的輸出經調節,則LED強度將爲恆 定。調節器的步進復原時間極爲快速,載荷態間的變遷夠 快而允許區分以及交流耦合外部早元。 也須了解圖6-8所述基於螢光之感測器具體實施例僅爲本 發明之應用例。本發明也可應用於多種其它實例,例如基 於吸收之感測器或基於折射率之感測器,述於美國專利申 請案第09/383,148號,申請日1999年8月28日,以引用方式 併入此處。 如此説明本發明,熟諳技藝人士了解可未悖離本發明之 精髓及ίϋ圍以其它形式做變化。例如雖然已經參照類比電 路説明本發明’但本發明原理同等可經由使用經過適當程 式規劃的數位k號處理器進行。任何及全部修改意圖皆涵 蓋於隨附之申請專利範圍。 -21 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- 581670 ABCD 六、申請專利範圍 1· 一種自感測器裝置擷取資訊之裝置,包含: 一個從事定量被分析物測量之内部感測器單元,包括 一個第一線圈,其係形成該感測器單元之電源供應器之 一邵分,一個耦合至第一線圈之負載,以及一個感測器 電路,用以根據該感測器電路所得感測器測量資訊而修 改負載; 一個外部單元,包括一個第二線圈,當該第二線圈係 置於第一線圈的預定近處距離以内時,該第二線圈係與 第一線圈交互感應耦合,一個振盪器,其係用以驅動第 二線圈俾感應第一線圈的充電電流,以及一個偵測器, 其係用以偵測藉内部感測器單元負載變化而感應的第二 線圈負載變化,以及其係用以提供對應該負載變化之資 訊信號;以及 一個處理器,其係用以接收及處理該資訊信號。 2 ·如申請專利範圍第1項之裝置,其中該感測器電路包含 一指示器元件,其係與被分析物渡度成比例而發射輕 射。 3.如申請專利範圍第2項之裝置,其中該負載包含感光電 阻器,其接收來自指示器元件的輻射。 4 ·如申請專利範圍第2項之裝置,其中該感測器電路進一 步包含一輻射來源,用以發射刺激輻射發射的電磁輻 射。 5.如申請專利範圍第2項之裝置,其中該指示器元件係與 被分析物濃度成比例發射螢光輻射。 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 581670 A B c D 6·如申請專利範圍第3項之裝置,其中該負載包本一咸 電阻器,其接收來自指示器元件的螢光輻射。Q .切 7.如申請專利範圍第4項之裝置’其中該發射電磁輻射的 輻射來源刺激勞光輻射的發射。 8·如申請專利範圍第1項之裝置,其中該内部單元可植入 哺乳動物體内。 9_如申清專利範圍第1項之裝置,其中該電源供應器進一 步包括一藉充電電流充電的充電電容器。 10·如申請專利範圍第1項之裝置,其中該外部單元之偵測 器包括碉幅(AM)解調器,用以偵測由負載變化引發電壓 波形振幅的改變,該電壓波形係經由第一線圈感應反射 於第二線圈。 11·如申請專利範圍第1 〇項之裝置,其中該外部單元進一步 包括一脈衝計數器,其係用以將偵測得的波形振幅變化 轉成適合被轉成電腦可讀取格式的脈衝。 12·如申請專利範圍第丨丨項之裝置’其中該處理器包括一電 腦·。 13.如申請專利氣圍第1項之裝置,其中該内部單元可被攝 取於哺乳動物體内。 14·如申請專利範圍第1項之裝置,其中該内部單元可植入 魚體内。 15·如申請專利範圍第1項之裝置,其中該内部單元可植入 植物體内。 16·如申請專利範圍第1項之裝置,其中該感測器電路包含 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 六、申請專利範圍 一指示器元件’其係與被分析物濃度成比例而吸收輻 射。 17· —種偵測被分析物是否存在於介質或其濃度之感測器裝 置,包含·· 一個包封的感測器本體,其具有環繞感測器本體之外 表面; 一個於該感測器本體之輻射源,其於感測器本體内部 發射輻射; 一個指示器元件,其具有光學特性而該光學特性係受 被分析物的存在或濃度影響,該指示器元件位於感測器 本體上接收來自輻射來源的輻射,以及發射輻射至感測 器本體内部; 一個感光元件,其係位於感測器本體且設置成可接收 感測器本體内部來自指示器元件的輻射;以及 一個感.應元件,其係位於感測器且耦合至感光元件, 該感應元件適合由外部感應元件接收磁感應電流用以供 給電力給感測器裝置以及進一步適合於外部感應元件感 應電流,該電流係隨感光元件接收的輕射量之函數變 化。 18. —種由感測器裝置擷取資訊之裝置,包含: 一個從事定量被分析物測量之内部感測器單元,包括 一個第一線圈,其係形成該感測器單元之電源供應器之 一部分,一個耦合至第一線圈之負載,以及一個感測器 電路,用以根據感測器電路所得感測器測量資訊而修改 581670六、申請專利範圍 負載,該感測器電路包括一個可回應於被分析物測量資 訊之信號通道偵測器,以及一個可回應於參考測量資訊 之參考通道偵測器,該信號通遒偵測器與該參考通道偵 測器的輸出係於感測器資訊中組合用以修改負載; 一個外部單元,包栝一個第二線圈,當該第二線圈係 置於第一線圈的預定近處距離以内時,該第二線圈係與 第一線圈交互感應耦合,一個振盪器,其係用以驅動第 -一線圈俾感應弟一線圈的充電電流,以及一個偵測器, 其係用以偵測藉内部感測器單元負載變化而感應的第二 線圈負載變化,以及其係用以提供對應該負載變化之資 訊信號·,以及 一個處理器,其係用以接收及處理該資訊信號。 19·如申請專利範圍第18項之裝置.,其中該信號通道偵測器 及參考通道偵測器爲光電二極體。 20·如申請專利範圍第19項之裝置,其中該信號通道偵測器 光電二極體及該參考通道偵測器光電二極體係以陰極對 陰極配置連結。 21 ·如申請專利範圍第18項之裝置’其中該信號通道偵測器 與該參考通道偵測器之一產生一項輸出,該輸出決定負 載修改至正向變遷時間,以及另一偵測器產生一種輸出 可決定負載修改之負向變遷時間,因此正向負載時間與 負向負載時間的時間差異可指示被分析物濃度以及參考 通道偵測器輸出與信號通道偵測器輸出間的差異。 22.如申請專利範圍第2項之裝置,其中該負載包含光電二 -25- 本紙張尺度通用中國國家標準(CNS) A4規格(210X297公釐) ---- 8 8 8 8 A B c D 581670 々、申請專利範圍 極體、比較器及電阻器彼此操作式耦合而提供隨被分析 物濃度之函數改變的負載。 -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)581670 ”啤正補无 第090115955號專利申請案 A7 B7 五、發明説明( 18a ) 元件符號說明 10 感測器 12 感測器本體 14 母質層 16 指示器分子 18 輻射來源 2 0 光偵測器 2 8 螢光 3 0 區 3 4 光濾波器 3 6 感測器/組織界面層 36a、36b、3 6 c 亞層 3 7 微血管 3 9 纖維細胞 64 溫度感測器 66 模組 10 1 外部單元 10 1a 可變射頻(RF)振盪器 10 1b 調幅解調器 10 1c 脈衝計數器 1 0 1 d 電腦介面 1 0 1 e 電腦 1 0 1 f 線圈 1 02 内部單元 -21a- 裝 訂 線 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 581670 第090115955號專利申請案 A7 ^ 5 中文說明書替換頁(93年2月)_Β|/ / 補无| 五、發明説明( 18b ) 102a 整流器電路 102b 光電電路 102c 負載 1 02d 線圈 2 0 1 操作放大器 202 發光二極體(L E D ) 203 感光電阻器 204 比較器 205 電壓調節器 90 1 信號通道偵測器 902 參考通道偵測器 903 LED 904 比較器 904a、904b Λ 9 0 4c 輸出端子 9 0 5、9 0 6、 9 0 7 電阻器 908 内部線圈 909 電壓調整器 9 10 電阻器 -21b- .· 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)
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-
2000
- 2000-06-29 US US09/605,706 patent/US6400974B1/en active Active
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2001
- 2001-06-27 EP EP01984089A patent/EP1294276A1/en not_active Withdrawn
- 2001-06-27 AU AU1674702A patent/AU1674702A/xx active Pending
- 2001-06-27 EP EP09160589.9A patent/EP2103250B1/en not_active Expired - Lifetime
- 2001-06-27 KR KR1020027017908A patent/KR100911887B1/ko active IP Right Grant
- 2001-06-27 KR KR1020097008662A patent/KR100979434B1/ko active IP Right Grant
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- 2001-06-27 CN CNB018121691A patent/CN100369577C/zh not_active Expired - Fee Related
- 2001-06-27 AU AU2002216747A patent/AU2002216747B2/en not_active Ceased
- 2001-06-27 BR BR0112049-2A patent/BR0112049A/pt not_active Application Discontinuation
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- 2001-06-29 TW TW090115955A patent/TW581670B/zh not_active IP Right Cessation
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2003
- 2003-06-11 HK HK10102782.6A patent/HK1135010A1/zh not_active IP Right Cessation
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- 2012-04-20 JP JP2012096246A patent/JP5561876B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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KR20090045954A (ko) | 2009-05-08 |
WO2002002005A1 (en) | 2002-01-10 |
JP5832571B2 (ja) | 2015-12-16 |
JP2014131761A (ja) | 2014-07-17 |
CN1440253A (zh) | 2003-09-03 |
BR0112049A (pt) | 2003-06-17 |
JP2012143616A (ja) | 2012-08-02 |
JP2004502252A (ja) | 2004-01-22 |
KR20030066335A (ko) | 2003-08-09 |
CN100369577C (zh) | 2008-02-20 |
EP2103250B1 (en) | 2015-08-05 |
HK1135010A1 (zh) | 2010-05-28 |
MXPA03000138A (es) | 2003-06-17 |
AU2002216747B2 (en) | 2005-06-23 |
EP2103250A1 (en) | 2009-09-23 |
JP5561876B2 (ja) | 2014-07-30 |
KR100911887B1 (ko) | 2009-08-11 |
CA2413758A1 (en) | 2002-01-10 |
DK2103250T3 (en) | 2015-08-24 |
EP1294276A1 (en) | 2003-03-26 |
CA2413758C (en) | 2011-04-05 |
AU1674702A (en) | 2002-01-14 |
US6400974B1 (en) | 2002-06-04 |
JP5033295B2 (ja) | 2012-09-26 |
KR100979434B1 (ko) | 2010-09-02 |
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