CN1440253A - 植入传感器处理系统和方法 - Google Patents
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Abstract
一种定量测量系统包括:提供一个外部单元(101a)和一个内部单元(102a)来获得例如在人体内的定量的分析物测量。在该系统应用的一个例子中,内部单元(102a)将被植入目标人体内的皮下或其它部位。内部单元(102a)包括光电子电路(102b),其一个元件可以包括荧光传感装置。光电子电路(102b)获得定量的测量信息并修改负载(102c),作为所获得信息的函数。负载(102a)又反过来改变通过线圈(102d)的电流的大小,而线圈(102d)耦合到外部单元(101a)的线圈(101f)上。解调器(101b)检测由内部线圈(102d)耦合到外部线圈(101f)而在其上感应的电流变化,并将被检测的信号作用到处理电路中,如脉冲计数器(101c)和计算机接口(101d)中,用于将该信号处理成计算机可读格式并输入到计算机(101e)中。
Description
发明背景
发明领域
本发明涉及一种用于处理植入传感装置输出的电路和方法,该传感装置用于检测液体或气体介质(如人体)中分析物的存在或浓度。更具体地说,本发明涉及一种处理植入荧光传感器输出的电路和方法,该传感器将分析物的浓度表示为荧光指示剂的荧光强度的函数。植入荧光传感器是一种无源装置,不包含电源。处理电路利用由其辐射的感应耦合RF能量向传感器提供电源。处理电路从植入传感器中接收处理电路上作为负载变化的信息。
发明背景
美国专利5,517,313中的公开说明作为参考一并列于此,该专利说明了一种荧光传感装置,包含一个分层阵列的包含荧光指示剂分子的基质(以下称为“荧光基质”),一个高通滤波器和一个光电探测器。在这个装置中,光源,最好是发光电二极管(“LED”),至少部分地位于指示剂材料中,这样使得来自该光源的入射光引起指示剂分子发出荧光。高通滤波器使得发出的光到达光电探测器,而过滤掉从光源来的散射的入射光。分析物被允许渗入荧光基质,与存在的分析物数量成比例地改变指示剂材料的荧光特性。然后由光电探测器检测和测量荧光辐射,这样就提供了一种在兴趣范围内的测量存在的分析物数量和浓度的测量方法。
在’313专利中公开说明的这种类型的传感器装置,其一个有利的应用是将其植入到人体内、皮下或静脉内,或其它部位,以便在任何希望的时间同时测量分析物。例如,希望测量麻醉状态下病人血液中氧的浓度,或者是糖尿病病人血液中的葡萄糖的浓度。
为了使用获得的测量信息,必须从传感装置中恢复这些信息。因为对植入人体的传感装置的大小和可接近的限制,为传感装置提供数据传输电路和/或电源会有一些相关的缺点。因此,需要在技术上改进植入人体的传感器以及从传感装置中恢复数据的系统。
发明概述
依据本发明,提供一种设备来从传感器装置中恢复信息,该设备包括进行定量的分析物测量的内部传感器单元,它包含形成所述传感器单元电源部分的第一个线圈,连接到所述第一个线圈的负载,以及根据利用所述传感器电路而获得的传感器测量信息来修改正所述负载的传感器电路;该设备还包括一个外部单元,它包含第二个线圈,当所述第二个线圈到达离第一个线圈预定的接近距离时,该线圈与第一个线圈相互感应耦合,一个振荡器,用于驱动所述第二个线圈以便在所述第一个线圈中感应出充电电流,以及一个检测器,用于检测由于所述内部传感器单元中所述负载的变化,而感应的所述第二个线圈中的负载变化,并提供相应于所述负载变化的信息信号;以及一个处理器,用于接收和处理所述信息信号。
附图的简要说明
结合附图,通过参考下面对优选实施例的详细说明,将会更全面地理解本发明,附图仅仅以示意方式给出,从而不局限于本发明,其中:
图1是依据本发明的一个优选实施例的方框图;
图2是依据本发明的一个优选实施例的内部传感装置单元的示意图;
图3和图4是表示在传感器装置电路中各点上的信号波形;
图5A-5e是由外部数据接收单元产生的信号图;
图6是依据本发明基于可植入荧光传感器的截面示意图;
图7是基于图6中荧光传感器的示意图,表示了传感器的波导特性;
图8是图6中划圈部分的详细示意图,表示在传感器体内部的内部反射,以及传感器/组织接口层的优选结构;
图9是依据本发明第二个优选实施例的内部传感器装置单元的示意图;
图10表示随着检测器电路进行其操作循环时,图9中比较器各个端子的电压水平的时序图。
优选实施例的详细说明
图1是依据本发明的植入荧光传感器处理系统的一个优选实施例的方框图。
该系统包括一个外部单元101和一个内部单元102。在该系统应用的一个实施例中,内部单元102将被植入到目标人体内的皮下或其它部位。内部单元包括光电子电路102b,光电子电路102b的一个元件可以包括一个荧光传感装置,如下面参考图6-8更全面说明的装置。光电子电路102b获得定量的测量信息,并修改负载102c,作为获得的信息的函数。负载102c又反过来改变与外部单元的线圈101f耦合的线圈102d中的电流大小。幅度调制(AM)解调器101b检测与线圈101f耦合的线圈102d在线圈101f中感应出的电流变化,并且将检测的信号作用在处理电路上,例如脉冲计数器101c以及计算机接口101d,用于将该信号处理成计算机可读格式,输入到计算机101e中。
当线圈101f和102d到相互足够接近的距离,使得在线圈之间有足够的耦合时,可变RF振荡器101a向线圈101f提供RF信号,该信号又反过来向线圈102d提供电磁能。从RF信号来的能量为内部单元102提供运行的电能,以获得定量的测量,这些测量用于改变负载102c,并且又反过来向线圈101f提供由外部单元检测并被解码成信息的负载变化。通过线圈101f和102d之间的相互耦合,负载的变化从内部单元耦合到外部单元。这样的加载可以通过将内部线圈和外部线圈调谐到近似相同的频率,以及利用适当构造技术增加共振电路的Q因数进行改进。因为相互的耦合,在一个线圈中的电流变化就会在另一个线圈中感应出电流。这种感应的电流被检测出来并被译码成相应的信息。
RF振荡器101a驱动线圈101f,线圈101f在线圈102d中感应出电流。感应出的电流由调节电路102a进行调节,并用于向光电子电路102b提供电源。由该光电子电路以脉冲串的形式产生数据,该脉冲串具有以荧光传感器辐射光的强度为函数而变化的频率,如在上述’313专利中所说明的那样。脉冲串以这种方式调制负载,以便暂时将调节器的输出端短接于地。这种负载的变化引起内部线圈102d中电流作相应变化,因而引起外部线圈101f周围磁场的变化。这种磁场的变化引起线圈101f两端电压成比例的变化,线圈101f两端电压遵守幅度调制。下面的方程说明了在外部线圈上看到的电压:
V=I[Z+((ωM)2)/Zs] (1)
其中,V=外部线圈两端的电压
I=外部线圈中的电流
Z=初级线圈的阻抗
ω=频率(弧度/秒)
M=线圈间的互感
Zs=传感器等效电路的阻抗
由方程(1)所示,外部线圈两端的电压和由内部传感器电路表示的阻抗之间具有直接的关系。虽然阻抗Zs是一个具有实部和虚部的复数,该实部和虚部分别相应于振荡信号的幅度和频率的变化,但是,依据本实施例的系统仅处理相互感应的实部。本领域普通技术人员将会认可,为了认改进信噪比,可通过修改外部电路检测两种类型的相互感应。
图2表示依据本发明内部传感器装置单元的一个实施例的示意图。线圈102d(L1)连接电容器C1、二极管D1(整流器102a)、齐纳二极管D2和电容器C2,构成内部单元102的电源。通过振荡器101a(见图1)作用在外部线圈101f的RF电压在线圈L1中感应的电流,在由L1和电容器C组成的L-C振荡回路产生共振,并由二极管D1调节,由电容器C2滤波。提供齐纳二极管D2来阻止作用到电路上的电压超过最大值,例如5伏。正如本领域普通技术人员所知道的那样,如果电容器C2两端的电压开始超过齐纳二极管D2的反向雪崩电压,那么,二极管D2就开始在其反向雪崩区域中导通,阻止电容器C2对于电路的最大允许电压产生过充。
电压调节器205从电容器C2接收电压并向运算放大器201的同相输入端产生固定输出电压Vref。运算放大器201的输出端连接到与反馈电阻器R1串联的发光电二极管(LED)202上。运算放大器201的反相输入端由R1两端的电压提供,因而将通过LED 202的电流调节到Vref/R1(忽略较小的偏置电流)。从LED202发出的光入射到传感器装置上(未示出)并引起传感器装置发光,作为被监视的特定分析物数量的函数。从传感器装置发出的光照射在光敏电阻器203上,光敏电阻器203的电阻作为入射到其上的光强度的函数而变化。光敏电阻器203与电容器C3串行连接,并且,光敏电阻和电容器C3的节点连接到比较器204的反向输入端上。光敏电阻器的另一端通过导体Vcomp连接到比较器204的输出端上。比较器204的输出端还连接到负载电容器C4和电阻网络R2,R3和R4上。比较器204形成可变电阻振荡器,并由R2,R3和R4的值决定切换点。C3是充电电容器,对于给定的光级别,它决定振荡器的基本频率。该频率由下式给定:
f=1/(1.38*Rphoto*C3) (2)
Rphoto=R2fc[10-rlog(a12fc](3)
其中,R2fc(=24kΩ)是在2英尺烛光(footcandle)时203的电阻值
γ(=0.8)是光敏电阻的灵敏度
a=英尺烛光为单位的入射光级别
对于给定的光敏电阻,可以将方程(3)反过来确定光强度,结合方程(2),光的强度可以从频率中确定出来。当然,提供上述给定的值仅仅是作为一个例子用于说明。根据特定的光敏电阻器的几何形状和使用的材料可以确定这些值。
当Vtime=V/3,Vcomp=V,而Vtrip=2V/3时,比较器204切换到高电平输出。电容器C3开始按时间常数Rphoto*Ctime充电。当Vtime达到2V/3,比较器将状态切换到低电平输出,将Vcomp变为Vcomp=0,Vtrip变为Vtrip=V/3。在这点上,C3将通过Rphoto放电。因此,建立了50%的占空比,而频率由方程(2)确定。Rphoto作为入射光的函数变化,由方程(3)给定。
C4是负载电容器,当比较器切换状态时,引起C2两端电压的降低。当比较器204切换到高电平输出时,C4必须从0V充电到Vdc。C2提供了通过C4的电流,该电流引起C2两端电压的降低。这又反过来引起电流流过调节器102a开始向电容器C2充电,改变包括内部线圈在内的振荡回路上的瞬间负载。这个负载被反映到方程(1)给定的外部线圈101f的阻抗中。
传感器对于单脉冲的操作表示在图3中。通道4是在C2上的DC电压。通道3表示在外部线圈101f上的相同脉冲,AM解调器的输出表示在通道2上。通道1表示比较器的输出,该比较器将AM解调信号转变成能够被数字计数器处理的方波。图4表示两个完整的操作循环,电路中相同的点用相同的通道符号表示。
外部单元101使用微处理器来实现脉冲计数器101c。当接收到足够数据获得一次有效的读取时,处理器关掉RF振荡器。图5A-5E表示一次测量读取的时序图。图5A表示作用到外部线圈中的RF电压信号的包络线;图5B表示内部电源电压的波形;图5C表示LED202强度的波形;图5D表示AM解调器101b的输出;图5E表示依据提供给传感器单元的电源,电路操作状态的时序。内部单元电源随着场强度增加而斜线上升。当电源数据穿过LED阈值电压加上反馈电压时,LED接通。AM解调器输出包括ID码形式的测量数据和数字数据,以及具体关于内部单元植入的目标的其它参数。利用数字识别和参数存贮电路(未表示出),经过时分多路复用光电子输出,根据RF电压信号对这些数据编码。数字电路使用RF电压产生适当的时钟信号。
内部存储电路可以保存ID码和参数值,如校准常数。这种信息随每次读取和定量的测量而返回。在测量序列中的预定义点上,从模拟脉冲列加载到数字控制加载的切换中,这些信号按时钟输出。这个点是在外部单元中通过检测输出数据流中预定义位同步方式而检测的。ID号用于识别特定目标,并且当两个或多个目标在外部单元附近时,防止数据出错。校准因数应用于测量信息以便在分析单元中获得分析物级别。
在图6中表示依据本发明一个方面的传感器10,它是根据荧光指示剂分子的荧光运行的。传感器10包括传感器体12;覆盖在传感器体12外表面上的基质层14,荧光指示剂分子16分布在该层中,辐射源18,例如LED发出辐射,包括大于与指示剂分子相感应的一个波长或一段范围波长的辐射,也就是在基于荧光传感器的情况下,一个波长或一段范围的波长引起指示剂分子16发出荧光;以及光敏元件20,例如一个光电探测器,在基于荧光传感器的情况下,对指示剂分子16发出的荧光是敏感的,这样就产生一个信号作为对其所表示的指示剂分子荧光级别的响应。传感器10还包括含有电子电路的模块或外壳66,温度传感器64用于提供温度的读取。在最简单的实施例中,指示剂分子16可能简单地覆盖在传感器体的表面上。但是,在优选实施例中,指示剂分子包含在基质层14中,该层包括依据现有技术中的方法而准备的生物适合聚合体基质,并覆盖在传感器体的表面上。合适的生物适合聚合体基质材料,必须是可渗透到分析物中,包括甲基丙烯酸酯和水凝胶,可以方便地选择这些物质来渗透到分析物中。
传感器体12方便地由合适的能透射光的聚合体材料组成,这种材料具有一个不同的折射指数,足够不同于在其中使用传感器的介质的折射指数,这样,这种聚合体将起到光波导作用。优选的材料是丙烯酸聚合体,例如聚甲基丙烯酸甲酯,聚甲基丙烯酸羟丙酯等等,以及如以Lexan商标出售的聚碳酸酯。这种材料使得由辐射源18产生的辐射(例如,在辐射源是LED的实施例中在适当波长下的光)以及在基于荧光实施例的情况下,由指示剂分子发出的荧光都穿过这种材料。辐射源或LED18相应于图2中的LED202。
如图7所示,辐射(例如光)是由辐射源18发出的,并且这种辐射中至少一些是在传感器体12内部反射的,例如,象在位置22上那样,因而在传感器体12内部来回地“反射”。
已经发现从传感器体界面反射的光和周围的介质能够与覆盖在表面上的指示剂分子(直接覆盖其上或含在一个基质中)相感应,例如,将覆盖于表面上的荧光指示剂分子中的荧光激活。另外,以一个很小而不会反射的角度(相对于界面的法线方向测量)的光穿过该界面并且还激发荧光指示剂分子中的荧光。还发现在光(或其它辐射)和界面以及指示剂分子之间的其它感应模式是很有用的,这依赖于传感器的结构和应用。这种其它模式包括易消散的激活和表面等离子体共振类型的激活。
如图8所示的那样,至少由荧光指示剂分子16发出的一些光,进入传感器体12中,在直接或被基质层14最外面(关于传感器体12)的表面发反射之后,如图中区域30所示的那样。然后,这种荧光28在传感器体12内部进行反射,更象由辐射源18发射的辐射,并且,象由辐射源发射的辐射那样,一些将以太小而不反射的角度照射在传感器体和周围介质之间的界面上,并将从传感器体中穿回来。
再如图6所示,在传感器体外表面和基质层14之间,传感器10还可能包括在传感器12两端上形成的反射覆盖层32,以增强辐射的内部反射和/或由荧光指示剂分子发射的光,或使它们最大。例如,反射层可以由油漆或由金属处理的材料组成。
光学过滤器34最好提供在光电探测器20的光敏表面上,光电探测器由光敏材料制造。光电探测器20相应于图2所示的光电探测器203。过滤器34,如现有技术中所熟知的那样,阻止由辐射源18产生的辐射量照射到光敏元件20的光敏表面上,或充分降低由辐射源18产生的辐射量。同时,该过滤器使得由荧光指示剂分子发射的荧光穿过它并照射在探测器光敏区域中。这就大大地降低了由于从辐射源18入射辐射引起的光电探测器信号中的噪声。
依据本发明的一个方面的传感器10的被特别地开发出来,虽然不只适合于本申请,但本发明的申请是测量人体中的多种生物学分析物,例如,葡萄糖、氧、毒素、配药或其它药物,荷尔蒙和其它新陈代谢的分析物。基质层4的具体组成和指示剂分子16可以随传感器将被用于检测的特定分析物和/或传感器用于检测分析物的不同地方(即在血液中或在皮下组织)而改变。但是,两个不变的要求是基质层14利用指示剂分子对分析的暴露,以及指示剂分子的光学特性(如荧光指示剂分子的荧光级别)是指示剂分子被暴露到的具体分析物浓度的函数。
为了便于人体内的现场使用,传感器10形状最好由圆滑的长方形或圆形组成。方便地,它具有近似豆子或医药胶囊的大小和形状,也就是,它的长度L在大约300-500微米到大约0.5英寸的数量级,深度D在大约300微米到大约0.3英寸的数量级,总体上全部是又平滑又圆的表面。当然,依赖于使用的材料和期望使用的装置,该装置可以大些或小些。这种结构允许传感器10植入到人体中,也就是在皮肤中或在组织下(包括在器官或血管内),传感器不会干扰必要的人体功能或引起剧烈疼痛或不适感觉。
而且,感到欣慰的是任何在人体(或动物体)中的植入——甚至包括“生物适应性”材料的植入都将在某种程度上,在被植入的有机体内引起“排外反应”,仅仅是由于植入会表现出一种刺激。在传感器10植入到人体的情况下,“排外反应”是最常见的纤维化包囊,也就是形成伤疤组织。葡萄糖——依据本发明的传感器希望检测的主要分析物——可能使其扩散或传输速率被这样的纤维化包囊所阻止。甚至是非常小的分子氧(O2),也能使其扩散或传输速率被这样的纤维化包囊所阻止。这仅仅是因为形成纤维化包囊(伤疤组织)的细胞实际上可能非常浓密,或具有不同于正常组织特性的新陈代谢特性。
为了克服在将指示剂分子暴露到生物学分析物中这种潜在的障碍或延迟。考虑两种主要方法。依据一种方法,可能是最简单的一种方法,传感器/组织接口层——当指示剂分子固定不动直接在传感器体表面上时,覆盖传感器体12表面和/或指示剂分子本身,或者当指示剂分子是含在其中时,覆盖基质层14的表面——利用引起很小或可接受级别的、形成的纤维化包囊材料中准备。在文献资料中说明的具有这种特性的这样材料的两个例子是从W.L.Gore得到的PrecludeTM Periocardial膜,以及结合亲水性的共价聚异丁烯,如在肯尼迪,“为生物学使用而设计的聚合体”(TailoringPolymers for Biological Uses),化学技术(Chemtech),1994年2月,第24-31页中所说明的那样。
可选择地,可以在传感器上提供包含若干层特殊生物适应性材料的传感器/组织接口层。如图18中所示的那样,例如,传感器/组织接口层36可以包括三个子层36a,36b和36c。子层36a,促进组织向内生长的层,最好由允许毛细管37渗入到该层中的生物适应性材料制成,即使纤维化细胞39(伤疤组织)累积在该层上。已经使用了很多年的Gore-Tex动脉管移植材料(ePTFE)、Dacron(PET)动脉管移植材料,以及从高密度聚乙烯(从POREX外科有限公司得到)生产出的MEDPOR生物材料,都是其基本组成、孔大小和孔结构都会促使组织和动脉管向组织向内生长层生长的材料的例子。
另一方面,子层36b最好是一种生物适应材料,孔尺寸(小于5微米)大大地小于组织向内生长子层36a的孔尺寸,以便阻止组织向内生长。当前制作子层36b的优选的材料是Preclude Periodcardical膜(以前称为Gore-Tex外科膜),从W.L.Gore Inc.得到,它包含扩展的聚四氟乙烯(ePTFE)。
第三个子层36c起到分子筛的作用,即,当允许分析物或感兴趣的分析物穿过它到达指示剂分子(直接覆盖在传感器体12上或固定在基质层14内不动),排除如免疫球蛋白、蛋白质及醣蛋白分子,它提供了分子重量的切断功能。很多熟知的纤维素类型的膜,例如,在肾透析过滤筒中使用的种类,都可以用作分子重量切割层36c。
象将被认可的那样,图6所示的传感器是完全自主的,这样,没有电引导头伸进或伸出传感器体,要么向传感器提供电源(例如用于驱动辐射源18),要么从传感器中传递信号。图2所示的所有电子电路可以被封在图6所示的模块66中。
本发明的第二个优选实施例如图9所示,在该实施例中使用了两个检测器,一个信号通道检测器901和一个参考通道检测器902。在图2所示的第一个实施例中,单个的信号检测器203用于从荧光指示剂传感器装置中检测辐射。虽然这个系统运行得很好,但是可能产生对系统的各种干扰,这会影响按初始校准的传感器输出精度。
这种干扰的例子包括:传感器制作本质带来的元件运行中的变化或漂移;传感器外部的环境条件;或这些干扰一起发生。在如下的其它事情中引入的内部变化:传感器辐射源的老化,影响光敏元件性能或灵敏度的变化,指示剂分子的消耗,在指示剂基质层传感器体辐射传导性的变化等;以及在其它传感器元件中的变化等等;在其它的例子中,光学参考通道还可以用于补偿或修正环境因数(例如,传感器外部的因数),这些因数可能影响指示剂分子的光学特性或表面上的光学特性,而不管分析物的存在或浓度。在这方面,示例的外部因数可能在其它东西中包含:温度级别;pH级别;周围光的存在;传感器应用的介质的反射率或混浊度。光学参考通道可以补偿用于传感器运行条件中的这样的变化。除了参考通道不响应正被测量的分析物外,在其它所有方面,参考通道与信号通道是相同的。
在光学测量中使用参考通道在现有技术中是熟知的。例如,美国专利号3,612,866,整个的说明作为参考一并列于此,该专利说明了除参考通道用清漆覆盖而不使其渗透到氧气中之外的一种荧光氧气传感器,它具有一个参考通道,该参考通道包括与测量通道相同的指示剂化学产品。
美国专利号4,861,727和5,190,729,整个的说明作为参考一并列于此,该专利说明了氧气传感器,使用了两种不同的镧系元素指示剂化学产品,它们发出两种不同的波长,一种正被氧气淬火(quench)的铽指示剂,一种很大程度上不受氧气影响的铕指示剂。美国专利号5,094,959,整个的说明作为参考一并列于此,该专利说明了一种氧气传感器,在这种传感器中,以特定的波长照射单一指示剂分子,并且在两种对氧气具有不同敏感度的两个不同辐射光谱上,测量由分子发出的荧光。具体地说,对氧不敏感的辐射光谱用作对两种辐射强度的比率的参考。美国专利号5,462,880和5,728,422,整个的说明作为参考一并列于此,该专利说明了一种使用参考分子的比率测量(ratiometric)荧光氧气传感方法,该参考分子不受氧气的影响,该方法具有与指示剂分子相似的光分解速率。另外,Muller,B.等人的ANALYST(分析物),第121卷,第339-343页(1996年三月),整个的说明作为参考一并列于此,该文献资料说明了一种液化CO2荧光传感器,在这种传感器中,蓝色光源直接通过纤维光耦合器到达指示剂通道中,并到达一个独立的参考光电探测器,该参考光电探测器检测LED光强度的变化。
另外,美国专利号4,580,059,整个的说明作为参考一并列于此,该专利说明了一种基于荧光的传感器,该传感器包含参考光测量单元,用于测量激发光源强度的变化——参见例如,第1行第10列以及下列等等。
如图9所示,信号和参考通道检测器是背对背的光电二极管901和902。虽然表示的是光电二极管,但还可以使用其它类型的光电探测器,例如光敏电阻器,光电三极管等等。LED903相应于图2中的光源202。在运行中,比较器904被设置为在电源电压Vss的1/3和2/3处触发,如由电阻器905,906和907的偏压那样。如果希望的话,通过修改这些电阻器的值,可以修改比较器904的触发电压。电容器C2是一个时序元件,其值用于调节信号和参考通道的幅度。流过每个光电探测器的电流是进入光电二极管入射光的强度或功率的函数,由方程I=RP表示,其中
I=电流
R=响应度(安培/瓦)
P=以瓦为单位的光功率
在荧光实施例中,照射在光电二极管探测器上的入射光功率是随着分析物的浓度而变化的。
图10是表示比较器904的端子904a、904b和904c的电压水平的时序图。在循环开始时,输出端子904c的电压水平是在地上(低电平输出状态),比较器C2的电压水平(相应于输入端子904b上的电压水平)是在2/3Vss,而输入端子904a的电压水平是在1/3Vss。在这种情况下,光电二极管901是正向偏压的,而光电二极管902是反向偏压的。正向偏压的光电二极管901两端的电压降只是其阈值电压,而反向偏压二极管902表现出与照射在其上的入射光成比例的电流。这个电流使电容器C2以dV/dt=I902/C2的速率放电,直到达到图10所示的1/3Vss的电压。在方程dV/dt=RP/C2中,插入上述光电二极管电流结果的方程。求解P,P=(dV*C2)/(dt*R),其中,
dV=比较器触发点之间的电压(在例子中的1/3Vss)
C2=以法拉为单位的电容器的值
dt=充电或放电的时间(如外部单元测量的那样)
R=光电探测器的响应度(单位安培/瓦)
这时,在输出端子904c上,比较器904切换到高电平输出状态Vss。触发点(输入端子904a)现在是2/3Vss,光电二极管901和902的极性现在是相反的。也就是,光电二极管901现在是反向偏压,而光电二极管902现在是正向偏压。
光电二极管901现在控制电容器C2以dV/dt=I901/C2的速率充电,直到C2的电压达到2/3Vss的电压。当电容器C2两端的电压达到2/3Vss的电压时,比较器904的输出再切换到低电平输出状态。只要系统被提供了电源,并且入射光在光电二极管上,则该循环将继续重复,如图10所示。
如果在每个光电二极管901和902上的入射光强度是相等的,那么,比较器的输出将是50%的占空比。如果在每个光电二极管上探测器上的入射光不相等,那么,电容器的充电电流将不同于电容器的放电电流。这就是图10所示的情况,其中,电容器的充电电流高于电容器的放电电流。因为是相同的电容器充电和放电,所以,不同的充电和放电时间仅是在两个光电二极管检测器上的入射光级别差值的函数。因此,由比较器904产生的方波的占空比表示了在信号通道光电二极管上的入射光和在参考通道光电二极管上的入射光之间的变化。采用合适的算法改变在确定分析物浓度时比较器中方波的占空比,这些算法在本领域技术中是通常所熟知的(见上面讨论的现有技术参考),在这里就不作进一步的讨论了。
一旦建立了方波,必须将它传递到外部单元中。这通过加载内部线圈908而进行,然后检测感应耦合到内部线圈的外部线圈中负载的变化。这种加载由电阻器901提供,电阻器901连接到比较器904的输出端子904c上。当比较器在高电平输出状态时,附加的电流Vss/R910从电压调节器909上拉出。当比较器在低电平输出状态时,这种附加的电流是不存在的。因此,电阻器910起到负载的作用,以由分析物浓度和参考通道的输出所确定的速率,该负载切换到该电路中并从该电路中切换出来。因为流过电阻器910的电流由包含线圈908的内部调节的振荡回路所提供,所以,切换电阻负载还将切换包含内部线圈908的振荡回路中的负载。由于改变负载引起的振荡回路的阻抗的变化,利用感应耦合的外部线圈中相应负载的变化检测出来,如上所述。电压调节器909消除线圈放置在场中所引起的任何影响。LED903发出用于指示剂分子传感器的激发光。LED903的电源由电压调节器来提供。在分析物测量读取过程中保持LED的强度恒定是非常重要的。一旦电压调节器的输出调节了,LED的强度将是恒定的。调节器的步进恢复时间非常快,加载状态之间的转换足够快,允许外部单元中的差分和AC耦合。
而且还象将要认可的那样,在图6-8中说明的基于荧光的传感器实施例正是该被揭示的发明可以应用到的例子。本发明也可以应用在很多其它的应用中,例如,一种基于吸光率的传感器或一种基于反射指数的传感器,如在美国专利申请号09/383,148,1999年8月28日提出申请所说明的那样,在这里作为参考一并列出。
上述已经对本发明进行了说明,本领域的普通技术人员将很明白,不脱离本发明的精神和实质,采用很多方法可以对相同部分可以做改变。例如,虽然参考模拟电路对本发明作了说明,但是通过使用适当编程的数字信号处理器同样可以完成本发明的原理。任何和所有这样的修改打算由下述的权利要求书来包括。
Claims (22)
1.用于从传感器装置中提取信息的设备,包括:
一个内部传感器单元,用于进行定量的分析物测量,包括:形成所述传感器单元电源部分的第一个线圈;一个耦合到所述第一个线圈的负载;以及一个传感器电路,根据由所述传感器电路所获得的测量信息来修改所述负载;
一个外部单元,包括:第二个线圈,当其被放在离所述第一个线圈预定的接近距离时,第二个线圈被互相感应耦合到所述第一个线圈;一个振荡器,用于驱动所述第二个线圈以在所述第一个线圈中感应充电电流;以及一个检测器,用于检测由所述内部传感器单元中所述负载的变化而感应的所述第二个线圈中负载变化,并提供相应于所述负载变化的信息信号;
一个处理器,用于接收和处理所述的信息信号。
2.依据权利要求1的设备,其中所述传感器电路包括发出与所述分析物级别成正比辐射的指示剂元件。
3.依据权利要求2的设备,其中所述负载包括一个从所述指示剂元件中接收辐射的光敏电阻器。
4.依据权利要求2的设备,其中所述传感器电路还包括一个辐射源,用于发出激发辐射的电磁辐射。
5.依据权利要求2的设备,其中所述指示剂元件发出与所述分析物级别成正比的荧光辐射。
6.依据权利要求3的设备,其中所述负载包括一个光敏电阻器,接收从所述指示剂元件发出的荧光辐射。
7.依据权利要求4的设备,其中用于发出电磁辐射的所述辐射源激发荧光辐射。
8.依据权利要求1的设备,其中所述内部单元是植入动物体内的。
9.依据权利要求1的设备,其中所述电源还包括一个由所述充电电流充电的充电电容器。
10.依据权利要求1的设备,其中所述外部单元的所述检测器包括一个幅值调制(AM)解调器,用于检测由所述负载变化引起的电压波形的幅值变化,所述电压波形通过所述第一个线圈被感应地反射到所述第二个线圈中。
11.依据权利要求10的设备,其中所述外部电源还包括一个脉冲计数器,用于将所述检测的波形幅值变化转换为适于变换为计算机可读形式的脉冲。
12.依据权利要求11的设备,其中所述处理器包括一台计算机。
13.依据权利要求1的设备,其中所述内部单元在动物体内是可吸收的。
14.依据权利要求1的设备,其中所述内部单元可植入鱼的体内。
15.依据权利要求1的设备,其中所述内部单元可植入植物体内。
16.依据权利要求1的设备,其中所述传感器电路包括一个指示剂元件,吸收与所述分析物级别成正比的辐射。
17.一种用于检测介质中分析物存在或浓度的传感器装置,包括:
一个密封的传感器体,具有一个围绕所述传感器体的外表面;
一个在所述传感器体中的辐射源,在所述传感器体内发出辐射;
一个指示剂元件,具有一种被分析物的存在或浓度影响的光学特性,所述的指示剂元件位于所述的传感器体上以接收从所述辐射源发出的辐射,并将辐射发送到所述传感器体中;
一个光敏元件位于所述的传感器体上,并且被定位以从所述指示剂元件中接收传感器体内的辐射;
一个感应元件,位于所述的传感器中并耦合到所述的光敏元件中,所述的感应元件适于从外部感应元件中接收向所述传感器装置提供电源的磁感应电流,并且还适于在所述的外部感应元件中感应出一个电流,该电流作为所述光敏元件接收辐射量函数而变化。
18.一种用于从传感器装置提取信息的设备,包括:
一个内部传感器单元,用于进行定量的分析物测量,包括:形成所述传感器单元电源部分的第一个线圈;一个耦合到所述第一个线圈的负载;以及一个传感器电路,根据由所述传感器电路所获得的测量信息来修改所述负载,所述的传感器电路包括一个响应分析物测量信息的信号通道检测器,以及一个响应参考测量信息的参考通道检测器,所述信号通道检测器和所述参考通道检测器的输出被在所述传感器信息中结合起来以修正所述负载:
一个外部单元,包括:第二个线圈,当其被放在离所述第一个线圈预定的接近距离时,第二个线圈被互相感应耦合到所述第一个线圈;一个振荡器,用于驱动所述第二个线圈以在所述第一个线圈中感应充电电流;以及一个检测器,用于检测由所述内部传感器单元中所述负载的变化而感应的所述第二个线圈中负载变化,并提供相应于所述负载变化的信息信号;
一个处理器,用于接收和处理所述的信息信号。
19.依据权利要求18的设备,其中所述信号通道检测器和参考通道检测器是光电二极管。
20.依据权利要求19的设备,其中信号通道检测器光电二极管和所述参考通道检测器光电二极管按阴极对阴极结构连接的。
21.依据权利要求18的设备,其中所述信号通道检测器和所述参考通道检测器之一产生一个输出,其决定所述负载修正的正转换时间,另一个产生一个输出,其决定所述负载修正的负转换时间,以便正的负载持续时间和负的负载持续时间的时间差值表示分析物的浓度以及所述参考通道检测器输出和所输信号通道检测器输出之间的差值。
22.依据权利要求2的设备,其中所述负载包括一个光电二极管,一个比较器和一个电阻器,相互耦合而运行,以提供作为分析物浓度函数的变化负载。
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Cited By (5)
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CN100363068C (zh) * | 2004-07-09 | 2008-01-23 | 天津大学 | 可充电的脑深部刺激器 |
CN1597011B (zh) * | 2004-07-27 | 2011-06-29 | 天津大学 | 外置式脑深部刺激器 |
CN107252309A (zh) * | 2009-07-06 | 2017-10-17 | 史密夫及内修公开有限公司 | 遥测骨科植入体 |
CN103002799A (zh) * | 2010-06-24 | 2013-03-27 | 日本先锋公司 | 光检测设备和流体测量设备 |
CN103002799B (zh) * | 2010-06-24 | 2017-02-08 | 日本先锋公司 | 光检测设备和流体测量设备 |
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WO2002002005A1 (en) | 2002-01-10 |
JP5832571B2 (ja) | 2015-12-16 |
JP2014131761A (ja) | 2014-07-17 |
BR0112049A (pt) | 2003-06-17 |
JP2012143616A (ja) | 2012-08-02 |
TW581670B (en) | 2004-04-01 |
JP2004502252A (ja) | 2004-01-22 |
KR20030066335A (ko) | 2003-08-09 |
CN100369577C (zh) | 2008-02-20 |
EP2103250B1 (en) | 2015-08-05 |
HK1135010A1 (zh) | 2010-05-28 |
MXPA03000138A (es) | 2003-06-17 |
AU2002216747B2 (en) | 2005-06-23 |
EP2103250A1 (en) | 2009-09-23 |
JP5561876B2 (ja) | 2014-07-30 |
KR100911887B1 (ko) | 2009-08-11 |
CA2413758A1 (en) | 2002-01-10 |
DK2103250T3 (en) | 2015-08-24 |
EP1294276A1 (en) | 2003-03-26 |
CA2413758C (en) | 2011-04-05 |
AU1674702A (en) | 2002-01-14 |
US6400974B1 (en) | 2002-06-04 |
JP5033295B2 (ja) | 2012-09-26 |
KR100979434B1 (ko) | 2010-09-02 |
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