TW575960B - Memory cell with trench transistor - Google Patents

Memory cell with trench transistor Download PDF

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Publication number
TW575960B
TW575960B TW91135418A TW91135418A TW575960B TW 575960 B TW575960 B TW 575960B TW 91135418 A TW91135418 A TW 91135418A TW 91135418 A TW91135418 A TW 91135418A TW 575960 B TW575960 B TW 575960B
Authority
TW
Taiwan
Prior art keywords
trench
junction
layer
region
ditch
Prior art date
Application number
TW91135418A
Other languages
English (en)
Chinese (zh)
Other versions
TW200302571A (en
Inventor
Josef Willer
Dezsoe Takacs
Frank Lau
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/022,654 external-priority patent/US6661053B2/en
Priority claimed from DE10162261A external-priority patent/DE10162261B4/de
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of TW200302571A publication Critical patent/TW200302571A/zh
Application granted granted Critical
Publication of TW575960B publication Critical patent/TW575960B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW91135418A 2001-12-18 2002-12-06 Memory cell with trench transistor TW575960B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/022,654 US6661053B2 (en) 2001-12-18 2001-12-18 Memory cell with trench transistor
DE10162261A DE10162261B4 (de) 2001-12-18 2001-12-18 Speicherzelle mit Grabentransistor

Publications (2)

Publication Number Publication Date
TW200302571A TW200302571A (en) 2003-08-01
TW575960B true TW575960B (en) 2004-02-11

Family

ID=26010800

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91135418A TW575960B (en) 2001-12-18 2002-12-06 Memory cell with trench transistor

Country Status (6)

Country Link
EP (1) EP1456876A2 (de)
JP (1) JP4081445B2 (de)
KR (1) KR100554647B1 (de)
CN (1) CN100382254C (de)
TW (1) TW575960B (de)
WO (1) WO2003052812A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6965143B2 (en) * 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
US7317222B2 (en) * 2006-01-27 2008-01-08 Freescale Semiconductor, Inc. Memory cell using a dielectric having non-uniform thickness
CN101908488B (zh) * 2009-06-08 2012-11-21 尼克森微电子股份有限公司 沟渠式金氧半导体组件的制作方法
KR102002942B1 (ko) * 2013-04-18 2019-07-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2662076B2 (ja) * 1990-05-02 1997-10-08 松下電子工業株式会社 不揮発性半導体記憶装置およびその製造方法
US5854501A (en) * 1995-11-20 1998-12-29 Micron Technology, Inc. Floating gate semiconductor device having a portion formed with a recess
DE19639026C1 (de) * 1996-09-23 1998-04-09 Siemens Ag Selbstjustierte nichtflüchtige Speicherzelle

Also Published As

Publication number Publication date
CN100382254C (zh) 2008-04-16
EP1456876A2 (de) 2004-09-15
JP4081445B2 (ja) 2008-04-23
WO2003052812A3 (de) 2003-11-06
KR100554647B1 (ko) 2006-02-24
TW200302571A (en) 2003-08-01
JP2005513778A (ja) 2005-05-12
KR20040065288A (ko) 2004-07-21
CN1605120A (zh) 2005-04-06
WO2003052812A2 (de) 2003-06-26

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