TW566054B - Light emitting device - Google Patents

Abstract

In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element consisting of an cathode, an organic compound layer and an anode, it is characterized in that a protector is formed on the interface between the anode being an electrode for taking out the light and the organic compound layer. Noted that the protector formed on the organic compound layer has a transmittance of 70-100%, and the damage given to the organic compound layer when the anode is formed by a sputtering method can be prevented.

Description

566054 A7 B7 V. Description of the Invention (1) Background of the Invention The present invention relates to a film having an organic compound (hereinafter referred to as an "organic compound layer") between a pair of electrodes and can be given by receiving an electric field. Light-emitting device of fluorescent or luminous light-emitting element. The light-emitting device referred to in this specification is an image display device, a light-emitting device, or a light source. Therefore, examples of the light-emitting device include the following: a connector, for example, a flexible printed circuit (FPC) or a tape automatic bonding (TAB) tape, or a module in which a tape-and-reel package (TCP) is mounted on the light-emitting element; The printed writing board is mounted on a TAB tape or TCP module; and the integrated circuit (1C) is a module directly mounted on a light-emitting element in a glass-on-chip package (COG) method. Related techniques: A light-emitting element is an element that emits light by receiving an electric field. It is said that its light emitting mechanism is based on the following: from the applied voltage to the organic composite layer sandwiched between the electrodes, electrons injected from the cathode and holes injected from the anode are recombined in the organic composite layer to form molecules in an excited state ( Hereinafter referred to as "molecular excitation"); and when the molecular excitation moves backward to its grounded state, energy is released. The molecular excitation of the organic complex may be in a single-line or triple-line state. In this specification, luminescence (ie, luminescence) may be provided based on either. In this light-emitting element, its organic composite layer is usually made of a thin film with a thickness of 1 // m or less. The light emitting element is a natural light type element in which the organic composite layer emits light by itself. Therefore, the size of the paper used in the back of a conventional LCD monitor applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) • Binding and ordering staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative -4- 566054 A7 B7 5. Description of the Invention (2) Light is not needed. As a result, the light emitting element has a great advantage that it can be produced in a thin and light form. (Please read the precautions on the back before filling out this page.) The time from the injection of carriers to their recombination in an organic composite layer with a thickness of about 100 to 200 nm. Medium is about tens of milliseconds. The time until light emission including the step of recombination of self-carriers to light emission is a time in the order of microseconds or less. Therefore, the light-emitting element also has the advantage that its response is very fast. Light-emitting elements draw the attention of next-generation flat-panel display elements due to their thinness, high reliability, and relatively low-voltage driving characteristics. Since the light emitting element is spontaneous and has a wide viewing angle, the visibility of the light emitting element is quite good. Therefore, the light emitting element is considered to be an effective element for a display screen using a portable device. In a light-emitting device formed by constructing this light-emitting element in a matrix form, a so-called passive matrix driving (simple matrix type) and active matrix driving (active matrix type) driving method can be used. However, in the case where the pixel density is increased, the active matrix type which is considered to be suitable for the switching of each pixel (or each point) is more portable because lower voltage driving can be achieved. Printed by the Intellectual Property of the Ministry of Economic Affairs ^ Employee Consumer Cooperative, however, as shown in FIG. 17, the active matrix light-emitting device has a TFT 1705 on the substrate 1701 and an anode 1 702 series. The organic compound layer 1703 is formed on the anode. A light emitting element 1707 formed on the organic composite layer 1703 on the substrate 1702 and the cathode 1704 is formed. In addition, as the anode material of the light-emitting element 1707, in order to make hole injection smooth, a high-power conductive material and a light-transmitting conductive material such as ITO (indium tin oxide) and IZO (indium zinc oxide) are used as Materials that achieve practical characteristics. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (21〇〆297 mm) -5- 566054 Intellectual property of the Ministry of Economic Affairs ¾ Printed by employee consumer cooperative A7 B7 V. Description of invention (3) Organic light-emitting layer of light-emitting element 1707 The light generated by 1 703 is directed to the TFT 1705 through the anode 1702. This is the best structure to emit light (hereinafter referred to as bottom emission). However, in the bottom emission structure, even if you try to improve the resolution, TFT and wiring may be due to their construction. Obstruct. Therefore, a problem of limitation of the hole diameter ratio occurred. In recent years, a structure in which light is radiated upward from a cathode end (hereinafter referred to as a top emission) has been proposed. The top emission light emitting device was published in Untested Patent No. 2001-43 9 80. In the example of the top emission type, the aperture ratio may be larger than that of the bottom emission type, so that a light emitting element capable of obtaining a higher resolution can be formed. However, in the example of the above invention, because there is no light-transmitting material and transparent conductive film, ITO is stacked after forming the cathode to emit light from the cathode end. In the example of the device structure in which light is to be taken out from the cathode terminal described above, sufficient film formation is required to maintain the function as a cathode. On the other hand, in order to ensure translucency as an electrode for taking out light, an extremely thin film needs to be formed. All the conditions are met, and contradictions occur. Therefore, in the present invention, in order to solve these problems, in the manufacture of an upper-surface injection type light-emitting device, as for an electrode for taking out light, it has achieved IT0 (Indium Tin Oxide), IZO (Indium Zinc Oxide) or a similar practical degree. Transparent, electronically conductive films are used as electrode materials. The purpose of the present invention is to produce a paper size different from the conventional upper surface injection type light emitting device structure. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). (Please read the precautions on the back before filling (This page)

-6-566054 A7 _ B7 V. Description of the invention (4) Optical device. (Please read the precautions on the back before filling in this page.) Also, in the example where the transparent electrode is formed as an electrode for extracting light, a transparent, electronic conductive film is formed after the organic compound layer has been formed. In general, the medical device 1 is transparent, and the forming of the electronic conductive film is performed by a sputtering method, and there may be a problem that the element is deteriorated due to a factor that damages the surface of the organic composite layer by sputtering during film formation. Therefore, in the present invention, in the production of an upper surface injection type light-emitting element, the purpose of the present invention is to enhance the light-emitting efficiency of the light-emitting element more than before and not to cause any damage to the organic composite layer. The present invention is characterized in that a protective layer is formed on the interface between the anode and the organic composite layer of a light-emitting element composed of a cathode, an organic composite layer, and an anode to solve this problem. Printed by the Intellectual Property of the Ministry of Economic Affairs ^ Employee Consumer Cooperatives It should be noted that in the present invention, the anode is formed of an electronic conductive film having an electrode that is translucent and functions as a light extraction device. Also, because the cathode is formed of a pixel electrode, the radiation shielding effect of the cathode material should never be necessary. However, when the pixel electrode and the cathode electrode are stacked and formed, the laminated film is required to have a radiation shielding effect. This is because the light system occurring in the organic composite layer is effectively taken out from the anode end. It should be noted that the radiation shielding effect means that the visible light transmission with respect to the stack is a factor of 10% or less. And, it is characterized in that a material having a power of 3.8 eV or less is used as the cathode material. It should be noted that because the energy barrier between the cathode and the organic composite layer can be alleviated by using this cathode material, the electron injection efficiency from the cathode is enhanced. After the organic composite layer has been formed on the cathode, a protective layer is formed on the organic composite layer. It should be noted that the protection of this paper in this specification applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -7-566054 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5) The layer has the function of preventing the organic composite layer from receiving sputter damage during the formation of the anode film after the organic composite layer is formed. Furthermore, as for the material for forming the protective layer, because the protective layer is formed between the organic composite layer and the anode, it is characterized in that its power is in the range of 4.5 to 5.5 eV so as to enhance the injection efficiency of the holes from the anode. And, although the anode of the light-emitting element is formed after the protective layer has been formed, in the present invention, since a conventional anode material such as ITO, IZO or a similar transparent, electronic conductive film, the anode can be used as the conventional anode Manufacturing does not have to give any change. The composition of the invention published in the present invention is a light emitting device having a TFT provided on an insulating surface, an inner layer insulating film formed on the TFT, and a figure formed on the inner layer insulating film. A pixel electrode, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, an organic composite layer formed on the cathode, and a protective layer formed on the organic composite layer And an anode formed on the protective layer, and the light emitting device is characterized by the TFT source region and the drain region, and the pixel electrode is electrically connected to the source region or the opening formed by the inner insulating film One of the drain regions, and the protective layer is made of a material having a power in a range of 4.5 to 5 eV. In addition, the composition of the other invention is a light-emitting device having a TFT provided on an insulating surface, an inner-layer insulating film formed on the TFT, and a pixel formed on the inner-layer insulating film. Electrode, an insulating film covering the edge portion of the pixel electrode, a cathode formed on the pixel electrode, an organic compound layer formed on the cathode, and the organic compound (please read the precautions on the back first) (Fill in this page) >-The size of the paper for binding and binding is applicable to the Chinese National Standard (CNS) A4 (210x297 mm) -8- 566054 Intellectual Property of the Ministry of Economic Affairs ^ Printed by the employee consumer cooperative A7 B7 V. Description of the invention (6) A protective layer formed on the physical layer and an anode formed on the protective layer, and the light-emitting device is characterized by the TFT source region and the drain region, and the opening of the pixel electrode formed in the inner insulating film is electrically charged. It is connected to one of the source region and the drain region, and the protective layer has a thickness of 0.5-5 nm. Moreover, the composition of the other invention is a light emitting device having a TFT provided on an insulating surface, an inner insulating film formed on the TFT, and a barrier formed on the inner insulating film. A film, a pixel electrode formed on the barrier film, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, and an organic composite layer formed on the cathode, A protective layer formed on the organic composite layer and an anode formed on the protective layer, and the light emitting device is characterized by the TFT source region and the drain region, and the pixel electrode is passed through the inner layer insulating film And the opening formed by the barrier film is electrically connected to one of the source region or the drain region, and the protective layer is made of a material having a power in a range of 4.5 to 5.5 eV. Still further, the composition of the other invention is a light emitting device having a TFT provided on an insulating surface, an inner layer insulating film formed on the TFT, and a resistor formed on the inner layer insulating film. A barrier film, a pixel electrode formed on the barrier film, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, and an organic composite layer formed on the cathode A protective layer formed on the organic composite layer and an anode formed on the protective layer, and the light emitting device is characterized by the TFT source region and the drain region, and the pixel electrode is passed through the inner paper The dimensions are applicable to Chinese National Standard (CNS) A4 specifications (210X 297 mm) V (Please read the precautions on the back before filling this page)

-9-566054 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling this page} The layer insulation film and the opening formed by the barrier film are electrically connected to the source region or the drain region One of them, and the cathode is composed of a metal material belonging to Group 1 or Group 2 of the periodic table, and the protective layer has a thickness of 0.5-5 nm. It should be noted that the above structure is composed of aluminum or silicon. Barrier films made of aluminum nitride (A1N), aluminum nitride oxide (ΑΙΝΟ), silicon nitride (SiN), silicon oxynitride (SiN〇) or similar insulating films can avoid the alkali contained in the material of the cathode Metal penetrates into the end of the inner insulation film and prevents gases such as oxygen or similar from the inner insulation film, water or similar from invading light-emitting elements. Intellectual Property of the Ministry of Economics ¾ Printed by Employee Consumer Cooperatives, other inventions are: A light-emitting device having a TFT provided on an insulating surface, an inner-layer insulating film formed on the TFT, and a pixel electrode formed on the inner-layer insulating film, covering an edge portion of the pixel electrode Insulation film in this figure A cathode formed on a plain electrode, an organic composite layer formed on the cathode, a protective layer formed on the organic composite layer, and an anode formed on the protective layer, and the light emitting device is characterized by the TFT The source electrode region and the drain electrode region. The opening formed by the pixel electrode in the inner insulating film is electrically connected to one of the source region or the drain electrode region, and the organic compound layer is composed of an organic compound. The first layer and the second layer of an organic compound different from the material composed of the first layer, and between the first layer and the second layer are an organic compound including the first layer and the A mixed layer composed of a second organic compound. In the individual configurations described above, in addition to silicon, such as silicon oxide, 'silicon nitride', silicon oxynitride, or similar insulating films, polyalkyleneamine 'polyamidamine' Bing Shaoxi This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -10- 566054 A7 B7 V. Invention Description (8) (Please read the precautions on the back before filling this page) Acid (including photosensitivity acrylic acid), An organic resin film such as BCB (Cyclobutene) or the like can be used as the inner insulating film and the insulating film. Also, a silicon oxide film formed by a coating method can be used. Also, in the above-mentioned individual configuration, The pixel electrode has functions such as electrical connection to a TFT formed on a substrate, and is formed by using a single or laminated metal material having low impedance such as aluminum, titanium, tungsten, and the like. In the above-mentioned individual configurations, the cathode It is composed of a low-power material and is formed on a pixel electrode. Although it belongs to Group 1 or Group 2 of the Periodic Table, in particular, it contains rare earth metals and similar transitions in addition to alkali metals and alkaline earth metals. Metals will be used, and in the present invention, alloys and composites containing these are particularly suitable for it. This is because low-power metals are unstable in air and oxidation and flaking will be a problem. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Specifically, CsF, CaF, CaF, BaF, LiF, and the like can be regarded as containing the above metals. Of fluoride. In addition to these, an alloy of silver (Mg: Ag) and an alloy of lithium (A1: Li) in which silver is added to aluminum, and an aluminum alloy containing lithium, calcium, and magnesium can be used. It should be noted that in the case of adding lithium to an aluminum alloy, the power of aluminum can be minimized. It should be noted that although the cathode is formed by using the above metal to a thickness of 1 to 50 nm, in the example of the above fluoride, it is preferable that the cathode is used as an extremely thin film having a thickness of 5 nm or less. And, in addition to these, metals such as lithium acetylacetonate (Liacac) or the like can be used. And, in the above individual structures, the organic composite layer is self-cathode and the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -11-566054 A7 B7 V. Description of the invention (9) (please first Read the note on the back and fill in this page again.) The area where the cathode injection carriers are recombined. Although some organic composite layers are formed with only a single light-emitting layer, the present invention also includes organic composite layers with multiple hole injection layers, hole transport layers, light emitting layers, barrier layers, and electron transport layers. Examples of electron injection layers and the like. Further, in the case where a multilayer system is stacked and formed, in an individual stacked interface, a layer (referred to as a mixed layer in this specification) formed of a material mixed to form an adjacent layer may be formed. It should be noted that because the energy voids occurring at the laminated interface may be relaxed, the mobility of the carriers in the organic composite layer may be enhanced and the driving voltage may be reduced. Furthermore, the organic composite layer of the present invention is formed of an organic composite-based low-molecular composite or an organic composite-based polymer composite, and an inorganic material (specifically, except for si and Ge oxides, any Carbon nitride (CxNy) oxides, alkali metal elements, alkaline earth metal elements, and lanthanides, and any materials in which Z η, S η, V, Ru, S m, and Ir are combined, or the like) Can be used as part of an organic composite layer. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Consumption Cooperative. In addition, in the above-mentioned individual structures, the protective layer is formed on the organic compound layer 'and has the function of avoiding spatter damage during anode forming. It should be noted that because the protective layer is formed in contact with the anode, it is formed by using a metal material having the same power as that of the anode material or more (4.5-5.5 eV) as its material or similar. form. In particular, it should be noted that it is formed by using metal materials belonging to Group 9, Group 10 or Group 11 of the periodic table such as gold (Au), silver (Ag), platinum (Pt) and the like. It should be noted that in the example of the elemental structure of the present invention, because the light generated in the organic compound layer transmitted through the protective layer is injected from the anode outside the paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) applies ) -12- 566054 A7 B7 V. Description of the invention (10) (Please read the precautions on the back before filling out this page) In the example in the section, the transmittance of visible light needs to be in the range of 70 to 100%. Therefore, the transmittance of one of the anode and the protective layer needs to be in the range of 70 to 100%. Also, regarding the protective layer of the present invention, the purpose is to avoid sputter damage during the formation of the anode film, so the film is not necessarily uniform. To ensure transmittance, it may be formed with a film thickness of 5 to 50 nm. It should be noted that the light emission obtained from the light-emitting device of the present invention may include any one of light emission due to a single-line excited state or a three-line excited state, or due to both states. Brief description of the figures For a more complete understanding of the present invention and its advantages, reference is now made to the accompanying drawings and the following detailed description, wherein: FIGS. 1A and 1B are diagrams illustrating the element structure of a light emitting device of the present invention; FIGS. 2A to 2 2D is a diagram illustrating the manufacturing steps of the light-emitting device of the present invention; FIGS. 3A to 3C are printed drawings of the consumer co-operatives of the Intellectual Property Bureau of the Ministry of Economics, which illustrate the manufacturing steps of the light-emitting device of the present invention; and FIGS. 4A and 4B are examples of the present invention. 5A and 5B are diagrams illustrating the element structure of the low-molecular-type light-emitting device of the present invention; FIGS. 6A and 6B are diagrams illustrating the element structure of the high-molecular-type light-emitting device of the present invention; This paper scale is applicable to the country of China Standard (CNS) A4 specification (210X297 public envy) -13- 566054 A7 B7 V. Description of the invention (Ή Figures 7A to 7C are diagrams illustrating the manufacturing steps of the light-emitting device of the present invention; Figures; Figures 8 to 8C are not FIGS. 9A to 9C illustrating the manufacturing steps of the light emitting device of the present invention FIGS. 9A to 9C are diagrams illustrating the manufacturing steps of the light emitting device of the present invention. Figures; Figures A and 11B are diagrams illustrating the manufacturing steps of the light-emitting device of the present invention; (Please read the precautions on the back before filling out this page} Ψ • 装 _ Figures 12A and 12B are examples of the light-emitting device of the present invention Element structure diagram; FIG. 13 is a diagram illustrating a circuit configuration of a light-emitting device applicable to the present invention; FIGS. 14A to 14H are diagrams showing an example of an electric appliance; FIGS. 15A to 15D are light-emitting devices illustrating the present invention FIG. 16 is a diagram illustrating the element structure of the light-emitting device of the present invention; FIG. 17 is a diagram showing a conventional example; and FIG. 18 is a diagram illustrating the element structure of the light-emitting device of the present invention. Component comparison table 17〇1 Base 17 0 2 Anode This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) Ordered by the Ministry of Economic Affairs Intellectual Property 笱 Employee Consumption Cooperation Du printed -14-566054 A7 B7 V. Description of the invention (12) Printed by the Intellectual Property of the Ministry of Economic Affairs, the Consumer Cooperative, 1703 Organic compound layer, 1704, cathode, 1705, thin-film transistor, 1707, light-emitting element, 101, pixel electrode, 103, and cathode, 104 Organic compound layer 105 Protective layer 106 Anode 107 Anode 110 Substrate 111 Thin film transistor 112 Insulation film 113 Wiring 114 Insulation layer 201 Substrate 202 Thin film transistor 203 Gate electrode 204 Gate insulation film 205 Source region 206 Drain electrode 1¾ Domain 207 Channel formation Domain 208 Insulation film 209 Barrier film (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) -15- 566054 A7 B7 V. Description of the invention (13) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

210 Electronic conductive film 211 Wiring 212 Pixel electrode 213 Insulating layer 214 Cathode 215 Organic compound layer 216 Protective layer 218 Light-emitting element 217 Anode 401 Pixel electrode 403 Cathode 410 Substrate 411 Thin film transistor 413 Wiring 501 Cathode 503 Organic compound layer 504 Electron transport layer 505 Barrier layer 506 Light emitting layer 507 Hole transport layer 508 Hole injection layer 509 Protective layer 510 Anode 531 Mixed layer I (Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standards (CNS) A4 specifications (210X297 mm) -16- 566054 A7 V. Description of invention (M) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 532 Mixed layer II 533 Mixed layer III 534 Mixed layer IV 701 Cathode 702 Organic compound layer 703 Luminescence Layer 704 Hole transport layer 705 Protective layer 706 Anode 731 Hybrid layer 600 Base 601 Base insulating film 602 Island half Conductor layer 603 Island-like semiconductor layer 604 Island-like semiconductor layer 605 Island-like semiconductor Π-ΣZ. Layer 601a Silicon oxynitride film 601b Silicon oxynitride film # 1737 Glass substrate 607 Gate insulating film 608 First conductive film 610 Uranium-resistant mask 611 Anti-corrosion mask 612 Anti-uranium mask (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -17- 566054 A7 B7 V. Description of the invention (15) 613 Uranium-resistant mask 615 First-shape conductive layer (please read the precautions on the back before filling this page) 616 First-shape conductive layer 617 First-shape conductive layer 618 First-shape conductive layer 620 Insulation Film 621b second conductive layer 622b second conductive layer 623b second conductive layer 624b second conductive layer 621a first conductive layer 622a first conductive layer 623a first conductive layer 624a first conductive layer 615a first conductive layer 616a first conductive Layer 617a First conductive layer Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 618a First conductive layer 621 First conductive layer and second conductive layer Layer 622 First conductive layer and second conductive layer 623 First conductive layer and second conductive layer 624 First conductive layer and second conductive layer 626 First impurity region 627 First impurity region This paper is applicable to Chinese national standards (CNS) ) A4 specification (210X 297 mm) -18- 566054 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (16) 628 No .— * Impurity field 629 First impurity field 631 Mask 632 Mask 634 The second impurity region 635, the second impurity region 636, the second impurity region 637, the second impurity region 638, the second impurity, the product-domain 639, the second impurity region 633, the mask 639, the mask 640, the mask 641, the fourth impurity region 642, and the fourth impurity. IS domain 153 First inner insulation 645 First inner insulation 646 Second inner insulation 647 Barrier film 650 Wiring 651 Wiring 652 Wiring 653 Wiring 654 Wiring (Please read the precautions on the back before filling out this page) Paper dimensions Applicable to Chinese National Standard (CNS) A4 (210 乂 297mm) -19- 566054 A7 B7 V. Description of the invention (17) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 655 Wiring 656 Wiring 657 Wiring 701 η-channel TFT 702 P-channel TFT 703 Switching TFT 704 Current control TFT 705 Drive circuit 706 Pixel section 658 Insulation film 659 Cathode 660 Organic compound layer 1005 Light-emitting layer 1006 Barrier layer 1007 Electron transport layer 661 Protective layer 662 Anode 663 Light-emitting element 1501 Pixel electrode 1502 Insulating film 1511 Pixel section 1512 pixels 1513 source wiring 1514 scan line (please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -20 · Consumption by Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative 566054 A7 B7 V. Description of the invention (18) 1515 Current supply line 1 503 Area a 1 504 Cathode 1 505 Organic compound layer 1 505a Organic compound layer (R) 1512a Pixel (R) 1 505b Organic compound Layer (G) 1512b Pixel (R) 1 505c Organic compound layer (B) 1512c Pixel (R) 670 Wiring 671 Third inner layer insulation film 6 7 2 Pixel electrode 67 3 Insulating layer 67 4 Cathode 675 Organic composite layer 676 Protective layer 67 7 Anode 678 Light-emitting element 1601 Pixel electrode 1 602 Inorganic insulating layer 1310 Pixel 1311 Light-emitting element 1312 Reserved capacitance This paper is applicable to China Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling this page)

21-566054 A7 B7 V. Description of the invention (19) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative 1201 Source Extreme Drive Circuit 1202 Pixels 1203 Gate Extreme Drive Circuit 1204 Sealing Base 1205 Sealant 1207 Transmission Signal 1208 Connection Wiring 1209 Softness Printed circuit 1210 substrate 1213 η-channel TFT 1214 P-channel TFT 1211 current control TFT 1212 pixel electrode 1215 organic compound layer 1216 protective layer 1217 anode 1218 light-emitting element 1219 light-emitting element 200 1 housing 2002 base 2003 display unit 2004 speaker unit 2005 image input terminal 2101 main body (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -22- 566054 A7 B7 V. Description of the invention (20) 2102 display unit 2103 image receiving unit (please read the precautions on the back before filling this page) 2104 operation key 2105 external port 2106 shutter 220 1 main body 2202 housing 2203 display unit 2204 keyboard 2205 external port 2206 indicator slide Rat 230 1 body 2302 display single Switch operation key 2305 2303 2304 2401 infrared port body 2402 housing Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed

2403 Display unit A

2404 Display unit B 2405 Recording medium reading unit 2406 Operation keys 2407 Speaker unit 250 1 Main body This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -23- 566054 A7 B7 V. Description of the invention (21) 2502 Display unit 2503 Arm unit (please read the precautions on the back before filling this page) 260 1 Main body 2602 Display unit 2603 Housing 2604 External port 2605 Remote control receiving unit 2606 Video receiving unit 2607 Battery 2608 Sound input unit 2609 Operation keys 2610 Eye block 270 1 Body 2703 Display unit 2702 Housing 2707 External port 2706 Operating keys Printed by the Ministry of Economic Affairs Intellectual Property Employees Cooperatives 2704 Sound input unit 2705 Sound output unit 2708 Antenna 1 803 Cathode 1813 Wiring 1814 Insulation layer 1 802 Light emitting Components This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297 mm) -24- 566054 A7 B7 V. Description of the invention (22) 1 804 Organic composite layer 1 807 Anode (Please read the precautions on the back before filling (This page) 1815 Passive film 615b Second conductive layer 616b Second conductive The preferred embodiment described with reference to FIG layer 617b 618b a second conductive layer of the second conductive layer in Example 1 and 1 B of the present invention will be described under the preferred embodiment. It should be noted that FIG. 1A shows the element structure of the light emitting layer 102 formed on the pixel electrode 101. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as shown in FIG. 1A, the cathode 103 is formed on the pixel electrode 101, and a protective layer 105 is formed to contact the organic composite layer 104 and is protecting On the layer 105, an anode 106 is formed. It should be noted that the electron system is injected into the organic composite layer HM from the cathode 103, and the hole system is injected into the organic composite layer 104 from the anode 106. Next, in the organic composite layer 104, the light-emitting system is obtained by recombining holes and electrons. In addition, the 'pixel electrode 101 has a function of electrically connecting the anode to one of a source region and a drain region of a thin film transistor (hereinafter referred to as a TFT) that drives a light-emitting element. It should be noted that, as shown in FIG. 1, the pixel electrode system is provided from the anode respectively in the example 'because it does not directly contact the organic composite layer, nor does it act as an electrode (cathode) of the light emitting element, it It may be formed of a material having a high electric conductivity required as a wiring material. However, this paper size applies the Chinese National Standard (CNS) A4 specification (2m × 297 public attack) -25- 566054 A7 B7 V. Description of the invention (23) 'In the example where the pixel electrode itself is used as the cathode of a light-emitting element It is necessary to use a low-power metal material such as a cathode (specifically, the power is 3.8 eV or less). Next, the cathode 103 is formed on the pixel electrode 101. It should be noted that elements belonging to Group 1 or Group 2 of the Periodic Table of the Elements are used as cathodes with low power. In particular, transition metals including rare earth metals in addition to alkali metals and alkaline earth metals will be used. However, in the present invention, in particular, an alloy or composite containing these will be used. This is because low-power metals are unstable in the air and oxidation and flaking will be a problem. In addition, the organic composite layer 104 includes a light emitting layer, and is formed by using or combining any one or more hole injection layers with different functions related to carriers, such as a hole transport layer, a barrier layer, an electron transport layer, and an electron. An injection layer and the like are formed. It should be noted that known materials can be used as the material forming the organic composite layer 104. It should be noted that, in the present invention, in the case where the organic composite layer has a laminated structure of two or more layers, a layer made of a material constituting a superposed interface adjacent to it may also be formed. . It should be noted that because the energy gap can be relaxed by the power in the interface, the carrier transport ability in the interior of the organic compound layer can be enhanced. Furthermore, the protective layer 106 formed on the organic composite layer 104 has a function of preventing sputtering damage during the forming of the anode 107. It should be noted that the protective layer 10 06 shown in this embodiment is formed to be in contact with the anode 107. In order to avoid the injection ability of holes from the anode, it will be the same or greater than IT 0 as the material of the anode 106. Metal materials with similar (4.5eV_5.5eV) power may be used. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page)-Binding-Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives -26-566054 A7 B7 V. Description of the invention (24) (Please read the precautions on the back before filling out this page) Also, in FIG. 1B, the TFT 1 1 1 (also known as the current-controlled TFT) formed on the substrate 11 is shown and the figure The light-emitting element 102 shown in 1 A is an active matrix light-emitting device electrically connected to each other. In FIG. 1B, the current-controlled TFT 11 11 has a source region, a drain region, a channel region, a gate insulating film, and a gate electrode, and the inner layer insulating film 1 1 2 is formed by covering these. Furthermore, in order to avoid degassing and release of moisture from the inner insulating film 112, a barrier film 101 is formed. The pixel electrode 101 is formed when the wiring 11 3 has been formed on the inner insulating film 112. It is formed on the barrier film 101. It should be noted that the edge portion of the pixel electrode 101 is covered with an insulating layer 114, and the cathode 103 is formed on the pixel electrode exposed on the substrate. In addition, the cathode 103, the organic composite layer 103, the protective layer 106, and the anode 107 are stacked similar to those shown in FIG. 1A, and the light emitting element 102 is completed. Here, the manufacturing will be described below with reference to FIGS. 2 and 3 Method of active matrix light emitting device. Printed by the Intellectual Property of the Ministry of Economic Affairs ^ 7 Employees' Cooperatives In Figure 2A, TFT 202 is formed on substrate 201. It should be noted that in this embodiment, a glass substrate is used as the substrate 201, but a quartz substrate may be used. Moreover, in the present invention, since the light-based self-light-emitting element is injected into the substrate, that is, to the opposite end, the substrate need not be particularly translucent, and a known metal having a radiation shielding effect can also be used. The TFT 202 may be formed by a known method. The TFT 202 is provided with at least one gate electrode 203. A source region 205, a drain region 206, and a channel are formed on the opposite side of the gate electrode 203 sandwiched between the gate insulating films 204. Area 207. According to the paper size, the Chinese National Standard (CNS) A4 specification (210X 297 mm) is applied. -27- 566054 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (25) Note that the channel formation area 207 The system is formed between the source region 205 and the drain region 206. Also, as shown in FIG. 2B, the inner layer insulating film 208 covering the TFT 202 is provided with a film thickness of 1 to 2 / zm, and a barrier film 209 is formed on the inner layer insulating film 208. It should be noted that in addition to containing insulating films such as oxidized sand, nitrided sand, silicon oxynitride, or similar insulating films, organic resin films such as polyalkyleneamine, polyamide, acrylic (including photosensitive or non-photosensitive acrylic) BCB (Cyclobutene) or the like can be used as a material for forming the inner-layer insulating film 208. Also, for example, a film in which the above-mentioned material is laminated as a laminated film made of acrylic acid and silicon oxide may be used. It should be noted that the inner insulating film is formed by a sputtering method or a vapor deposition method. Furthermore, as a sand oxide film formed by a coating method, a coated silicon oxide film (SOG: spin-on glass type) can also be used. Specifically, it contains aluminum or silicon such as aluminum nitride (A1N ), Aluminum oxide (AINO), silicon nitride (SiN), silicon oxynitride (SiN0) or similar insulating films can be used as a material for forming the barrier film 209. And, it is expected to be formed with a film thickness of 0.2 to 1.0 · / m. It should be noted that by providing the barrier film 209, diffusion of alkali metal, water, organic gas or the like can be avoided. Next, after the opening has been formed in the inner insulating film 208 and the barrier film 209, the electronic conductive film 210 is formed on the barrier film 209 by a sputtering method (FIG. 2C). It is selected from titanium (Ta), tungsten (W), antimony (Ti), manganese (Mo), and the paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)

-28- 566054 A7 B7 V. Description of the invention (26) (A1), copper (cu), or an alloy material or a composite material mainly composed of the foregoing elements can be used as the electronic conductive material for forming the electronic conductive film 2 10. Furthermore, it may be a laminated structure by combining a plurality of these. It should be noted here that a 50-nm-thick tungsten film, a 500-nm-thick aluminum and silicon (Al-Si) alloy, and a 30-nm-thick titanium nitride layer are sequentially stacked in a three-layer structure. . Subsequently, as shown in FIG. 2D, the wiring 211 electrically connected to the TFT 202 is formed of the above-mentioned electronic conductive film 210. It should be noted that in the present invention, the pixel electrodes 2 1 2 also having functions such as wiring are also formed at the same time. Also, one of the dry etching method and the wet uranium etching method may be used as a patterning method. Also, as shown in FIG. 3A, the insulating layer 213 is formed so as to cover the gap between the edges of the anode, and the insulating layer 2 1 3 can be obtained by forming an opening in the pixel electrode. In addition to containing sand such as silicon oxide, nitrided sand, oxynitride, or similar materials, organic resin films such as polyalkyleneamine, polyamine, acrylic (including photosensitive acrylic), BCB (cyclobutene), or Similar can be used as a material for forming the insulating layer 2 1 3. Furthermore, a coated oxidized stone film (S 0 G: spin-on glass type) can also be used. It should be noted that it can be formed with a film thickness of 1 to 2 // m, but in particular, in the case where a material containing silicon such as silicon oxide, silicon nitride, silicon oxynitride, or the like is used, it is expected to be 0.1 A film thickness of 0 · 3 // m is formed. Next, a cathode 214 is formed. It is to be noted that the cathode 214 is manufactured by a sputtering method or a vapor deposition method using a patterned metal mask. It should be noted that as the material forming the cathode 214, the material with low power is best to strengthen the size of this paper and apply the Chinese National Standard (CNS) A4 specification (mm (please read the precautions on the back before filling in this page). Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics -29- 566054 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics A7 B7 V. Invention Description (27) The electron injection capability from the cathode 214, except for alkali metals and alkaline earth metals' Elements of Group 1 or Group 2 of the periodic table, that is, transition metals containing rare earth metals, or the like are used. Specifically, fluorinated planer (CsF), calcium fluoride (CaF) 'barium fluoride can be used (BaF), lithium fluoride (LiF), and the like are treated as fluorides containing the above metals. In addition to these, alloys of silver (Mg: Ag) are added to magnesium (A1: Li) of lithium are added to aluminum Aluminum alloys containing lithium, calcium, and magnesium can be used. It should be noted that in the case of adding lithium to aluminum alloy, the power of aluminum can be minimized. It should be noted that although the cathode 214 is made of Film thickness formation in nm In the case of using the above-mentioned fluoride, it is preferably used as a very thin film with a film thickness of 5 nm or less. And, in addition to this, lithium acetylacetonate (Liacac) or the like can be used Similar materials. Next, an organic composite layer is formed on the cathode 214 (FIG. 3B). It should be noted that well-known low-molecular composite, high-molecular composite, or medium-molecular composite organic composites can be used. It is used as a material for forming the organic compound layer 2 1 5. It should be noted that the medium molecular compound-based organic compound referred to herein means the construction of an organic compound without purification and solubility (preferably, the number of molecules Is 10 or less), and the molecular length of the chain is 5 // m or less (preferably, 50 nm or less). Also, the vapor deposition method (impedance heating method), spin coating method , Inkjet method, printing method or the like can be used as the film molding method. It should be noted that the organic composite layer, the pattern can be implemented by forming a film using a metal mask. This paper size applies to Chinese national standards (CNS ) A4 size (210X297 mm (Please read the back of the precautions to fill out this page) - loaded _

1T -30- 566054 A7 B7 V. Description of the invention (28) It should be noted that even in the case where the organic compound layer 2 1 5 is a single-layer structure or a laminated structure, the film thickness is desirably 10 to 300 nm Range. (Please read the precautions on the back before filling out this page.) Furthermore, the protective layer 2 1 6 is formed on the organic compound layer 2 1 5. It should be noted that regarding the formation of the protective layer 2 1 6, it is made of a material that will be used as the anode 1 06 by using materials having the same power as or higher than ITO or similar (specifically, a range from 4.5 to 5.5 eV). Formed from metal materials. For example, it may be formed using metal materials belonging to the 9th, 10th, or 11th group of the periodic table of the element such as gold (Au), platinum (Pt), lead (Pd), nickel (Ni), or the like. Also, because the purpose of the protective layer of the present invention is to avoid splash damage during the formation of the anode film, the film need not be uniform and transmittance may be guaranteed. Therefore, it may be formed with an electron conductive film having a visible transmittance in the range of 70 to 100% with a film thickness of 0.5 to 5 nm. Furthermore, the shape may be bundle-like, in which the protective layer is formed as shown in FIG. 1A, respectively, or it may be formed in a concave-convex shape on its surface, and the film is formed continuously and thinly. Furthermore, the light-emitting element 218 is completed by forming the anode 217 on the protective layer 216. IT〇, IZO, or similar transparent electronic conductive film can be printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economics to be used as the material for forming the anode 2 17, and the anode 2 17 is formed by sputtering. Note that the top-gate TFT has been exemplified and explained, but it is not particularly limited thereto, and instead of being applied to the top-gate TFT, it can be applied to the bottom-gate TFT, continuous shaking, and other TFT structures. The light emitted from the recombination of carriers can be efficiently injected from the anode 2 1 7 end of the organic composite layer 2 1 5 by making such a structure. This paper size applies to China National Standard (CNS) 8-4 specification (210X297 mm) -31-566054 A7 B7 V. Description of the invention (29) (Please read the precautions on the back before filling this page). It is possible to produce a light-emitting device having the structure shown in FIG. 4. The structure shown in Fig. 4A is different from the shape of the protective layer in comparison with Fig. 1A, but has a concave-convex shape as previously described. Also, although it is different in that it is formed using ITO as a material for forming the pixel electrode 401 and the cathode material is different, the description of FIG. 1 may be referred to exclude these. Furthermore, in FIG. 4B, the TFT 411 formed on the substrate 410 and the light-emitting element shown in FIG. 4B are electrically connected active light-emitting devices, but the wiring 413 and the pixel electrode 401 are separately formed, and then it There is a structure different from FIG. 1B in forming a pixel electrode from ITO. It should be noted that in the example where this structure is formed, it is desired that the cathode 403 is formed so as to have a radiation shielding effect to prevent unnecessary light from being injected from the pixel electrode terminal. It should be noted that materials intended to be used as cathode materials have low power (specifically, power is 3.8 eV or less) and further, a material having a thick film thickness and having a radiation shielding effect is used. The light-emitting device of the present invention having the above-mentioned structure will be explained in further detail with reference to examples shown below. Printed by the Intellectual Property of the Ministry of Economic Affairs and Consumer Cooperatives. Examples The following will describe examples of the present invention. Example 1 In this example, the element structure of the light emitting element of the light emitting device of the present invention will be described in detail below with reference to FIG. 5. In particular, the following description indicates that the use of low-grade paper is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -32- 566054 A7 B7 V. Description of the invention (3〇) Sub-base composites in organic composites Examples are formed in layers. As described in the embodiment, the cathode 501 is formed on the pixel electrode. In this example, the 'cathode 501 is formed by a vapor deposition method using c s f with a film thickness of 5 n m. Next, the 'organic composite layer 503 is formed on the cathode 501, but first, an electron transport layer 504 is formed. The electron transport layer 504 is formed using a material capable of performing electron transport with acceptable electron capability. In this example, although it is an electron-transporting layer 504, the film is formed by using a vapor deposition method with a film thickness of 40 nm and tris (8-quinoline) aluminum (hereinafter, abbreviated as Alq3). Further, a barrier layer 505 is formed. In the case where the hole injected into the light-emitting layer 506 has passed through the electron transport layer 504 and reached the cathode 501, the barrier layer 505 is also called a hole suppression layer, which is a layer that avoids recombination and does not need a useless current flow. In this example, bathocuproine (hereinafter abbreviated as BCP) is used by the vapor phase deposition method; it is formed as a barrier layer 505 with a film thickness of 10 nm. Next, a light emitting layer 506 is formed. In this example, 'electrons and electrons are recombined in the light emitting layer 506 and light is generated. It should be noted that the light-emitting layer 506 is made of 4,4-bispyri-biphenyl (hereinafter, abbreviated as [Bp]) as a hole material having a hole-transporting ability, and has light emission by performing co-evaporation deposition. The tris (2-phenyl 1¾ πd) of the organic complex (Im * (ppy) 3) was formed with a film thickness of 30 nm. Next, the hole transporting layer 507 is formed of a material having a high hole transporting ability. Here ’it uses 4,4, di [N- (1-naphthyl) -fluorenyl-ammonia (Please read the precautions on the back before filling this page)

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566054 A 7 B7 V. Description of the Invention The (31) group] -diphenyl (hereinafter abbreviated as a-NPD) is formed with a film thickness of 40 nm. Finally, the organic composite layer 503 having a laminated structure is completed by forming a hole injection layer 508. It should be noted that the hole injection layer 508 has a function of enhancing the electrode injection ability from the anode. In this example, regarding the hole injection layer 508, it is formed using copper phthalocyanine (Cu_Pc) with a film thickness of 30 nm < ° It should be noted here that it is formed by a vapor deposition method. ί 妾 下 ’forms a protective layer 509. It should be noted that, specifically, an electronic conductive film having a visible light transmittance in the range of 70 to 100% and a power in the range of # 4.5 S 5.5 is used as the metal material forming the protective layer 509. Also, the metal film is often non-transparent with respect to visible light, and it is formed in a film thickness in the range of 0.5 to 5 nm. It should be noted that in this example, it is formed in a bundle with a film thickness of 4 nm using gold. Next, an anode 510 is formed. In the present invention, since the anode 510 is an electrode through which light generated in the organic composite layer 503 passes, it is formed of a material having a translucency. In addition, the anode 5 10 needs to be formed of a material having a high power because it is an electrode for injecting holes into the organic composite layer 503. It should be noted that in this example, it is formed using ITO at a film thickness of 100 nm. It should be noted that in this example, as shown in FIG. 5B, the adjacent layers of the superposed interface forming the electron transport layer 504, the barrier layer 505, the light emitting layer 5 06 'hole transport layer 507, and the hole injection layer A mixed layer composed of 508 material may also be formed. Specifically, the mixed layer I (531) is formed in the electron transport layer 504 and the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) --------- install-V (please first Read the notes on the back and fill in this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives -34- 566054 A7 _____ B7 V. Description of the invention (32) The laminated interface between the barrier layers 505, the mixed layer π (532 ) Is formed on the laminated interface between the barrier layer 505 and the light-emitting layer 506, and the mixed layer II ((Please read the precautions on the back before filling this page) 5 3 3) is formed on the light-emitting layer 506 and the hole transport layer In the laminated interface between 507, the mixed layer IV (5 34) is formed on the laminated interface between the hole transmission layer 507 and the hole injection layer 508. It should be noted that in the example of this example, the mixed layer I (53 1) is formed by performing co-evaporation deposition of Alq3 and BCP, and the mixed layer II (532) is performed by performing BCP, CBP, and (Ii * (ppy) 3) Co-evaporation is formed, and the mixed layer πΐ (53 3) is formed by performing co-evaporation of CBP, (Ir (ppy) 3) and a -NPD, and the mixed layer IV C 5 34) is performed by performing a -NPD And co-evaporation of Cu-Pc. It should be noted that because the example shown in FIG. 5B is a better example, it is not necessary to form a mixed layer on the laminated interface of all organic composite layers. For example, the mixed layer may be formed only on the barrier layer 505 in contact with the light-emitting layer And the interface of the hole transmission layer 507. From the above description, a light-emitting element formed using a low-molecular composite base material used as an organic composite layer can be formed. Example 2 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This example will give a detailed description of the element structure of the light-emitting element of the light-emitting device of the present invention with reference to FIG. 4. In particular, the element structure of a polymer-based composite used as an organic composite layer will be explained. As described in the embodiment mode, the cathode 701 is formed. The cathode 701 is formed by evaporating CaF to a thickness of 5 nm in this example. Further, in this example, the organic composite layer 702 is a self-emissive layer-35- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 566054 A7 _____B7 5: Description of the invention (33) " ^ 703 And a hole transport layer 704. The organic composite layer 702 is formed by using a molecular-based organic composite. The light-emitting layer 703 may be made of poly-p-phenylene vinylene, poly-p-phenyl, polythiodiene, or polyfluorene. As polystyrene-based materials, the following can be used: poly (p_phenethylcan), hereinafter referred to as PPV, or poly [2- (2, _ethylhexaoxy) _5_methoxy_1, 4-styrene], hereinafter referred to as MEH-PPV, each can be given an orange cold light; poly [2- (二 院 oxyphenyl)-丨, 4-styrene], hereinafter referred to as Roph_PPV '可Give green cold light; or similar. As poly-p-phenylene materials, the following can be used: poly (2,5_dioxane. 1,4-benzene), hereinafter referred to as RO-PPP, poly (2,5-dihexano-1,4 -Benzene), each can give a blue cold light; or similar. As poly-thiodiene-based materials, the following can be used: poly (3-methylene-thiodiene-based), hereinafter referred to as PAT, poly (3-hexadiene-based, fluorinated), hereinafter PCHT, poly (3-cycloalk-4-methyl-thiodiene fluorene), hereinafter referred to as PCHMT, poly (3,4-bicyclohexadithiodiene fluorene), hereinafter referred to as PDCHT, poly [3 -(4-octylbenzene) -monothiadiene, hereinafter referred to as POPT, or poly [3- (4-octylbenzene) -2,2-di-thiodiene, fluorene], hereinafter referred to as PTOPT, each Red cold light can be given; or similar. As polyfluorene-based materials, the following can be used: poly (9,9-bisalkane), hereinafter referred to as PDAF, or poly (9,9-bisoctane, hereinafter) PD OF 'each can be given blue Color cold light; or similar. The above materials that can form the light-emitting layer are decomposed in an organic solvent, and this paper size applies the Chinese National Standard (CNS) A # specification (BOX "7 mm) C Please read the precautions on the back before filling in this page}

Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -36-566054 V. Description of Invention (34 (Please read the notes on the back before filling this page) Then use the solvent by coating method. All organic solvents here include toluene, Benzene, chlorinated benzene, dichlorinated benzene, chloroform, naphthalene, xylene, dichloromethane '% hexanolide' NMP (N-methyl-2-pyrrolidone), bismethyl sulfur oxide, cyclohexanecyclohexane Ketone, dioxane, and THF (tetrahydrofuran). In this example, a film made of PPV as the light-emitting layer 703 is formed to have a thickness of 80 nm. The hole-transporting layer 3 0 5 can use poly (3,4 -Ethylenedioxymonothiodiene 圜), hereinafter referred to as PEDOT, and polystyrene sulfuric acid, hereinafter referred to as pss' which is the acceptor material, or polyaniline, hereinafter referred to as pani, and fluorenone sulfate, hereinafter referred to as It is formed for both CSA. The material is made into an aqueous solution because the material is water-soluble, and then the aqueous solution is used by the coating method to form a film. In this example, a film system made of PPV is formed as a light-emitting layer 304. With a thickness of 80 nm and a film system consisting of PEDOT and PSS, The hole transmission layer 305 has a thickness of 30 nm. Therefore, it is possible to obtain an organic compound layer 702 in which the light emitting layer 703 and the hole transmission layer 704 are stacked. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, next, a protective layer 705 is formed. It should be noted that as the metal material forming the protective layer 509, specifically, an electronic conductive film having a visible light transmittance in the range of 70 to 100% and a power in the range of 4.5 to 5.5 is used. 'The metal film is often opaque to visible light, and it is formed with a film thickness in the range of 0.5 to 5 nm. It should be noted that in this example, it uses gold with a film thickness of 4 nm to beam Next, the anode 706 is formed. In the present invention, because the anode 706 is an electrode that allows light generated in the organic composite layer 703 to pass through, it is formed of a material having a translucent property. In addition, the anode 706 is required For this paper with high power, the Chinese National Standard (CNS) A4 specification (210X297 mm) -37- 566054 A7 B7 V. Description of the invention (35) The material is formed because it injects holes into the organic composite layer 702 Electricity It should be noted that in this example, it is formed using ITO at a film thickness of 100 nm. In this example, it may be formed between the light-emitting layer 703 and the hole transport layer 704 formed from the organic composite layer 702 The material of the adjacent layer of the interface forms the mixed layer 7 3 1. Therefore, a light emitting element formed using a polymer-based material for the organic composite layer may be formed. Example 3 An example of the present invention will be described with reference to FIGS. 7 to 10. Here, a method for manufacturing a pixel portion and a TFT (n-channel TFT and p-channel TFT) of a driving circuit provided around the pixel portion on the same substrate will be described in detail. A base insulating film 601 is formed on the substrate 600 to obtain a first semiconductor film having a crystalline structure, and then, island-shaped semiconductor layers 602 to 605 are isolated by conductive etching to a desired shape. As the substrate 600, a glass substrate (# 1737) was used. As the base insulating film 601, the silicon oxynitride film 601a uses SiH4, NH3, and N2O as the material gas (the composition ratio of the silicon oxynitride film: Si = 32%, 〇 = 27%, N = 24%, Η = 17%) is formed by plasma CVD at a temperature of 400 ° C as the lower layer of the base insulating film on the silicon oxide film. The silicon nitride oxide film has a thickness of 50 nm (preferably 10 to 200 nm). The surface of the film is washed with ozone water, and then the oxide film on the surface is diluted by this paper. The size of the paper applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm). (Please read the precautions on the back before filling in this Page) • Loading ·

Printed by 1T Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs -38- 566054 A7 B7 V. Description of Invention (36) (Please read the precautions on the back before filling this page) of fluoric acid (diluted to 1/100). Next, the silicon oxynitride film 601b has a thickness of 100 nm (preferably 50 to 200 nm) and is placed on a lower layer to form a stack. A semiconductor film having an amorphous structure (here, an amorphous silicon film) laminated without exposure in the air is formed by plasma CVD using SiHU as a material gas at a temperature of 300 ° C. The semiconductor film is 54 nm thick (preferably 25 to 80 nm). The base film 601 has a two-layer structure in this example. However, the base insulating film may be a single layer or more than two insulating films mainly containing silicon. The material of the semiconductor film is not limited, but it is preferably formed by a known method (sputtering, LPCVD, plasma CVD, or the like) from silicon or a silicon gallium alloy (SixGe ^ (X = 0.000 1 to 0.02)). The plasma CVD equipment used may be wafer-to-wafer or batch-processed. The base insulating film and the semiconductor film may be continuously formed in the same chamber to avoid contact with air. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The surface of the semiconductor film with an amorphous structure is washed and then a very thin oxide film, about 2 nm thick, is formed on the surface using ozone water. Next, the semiconductor film is doped with a small amount of impurity elements (boron or phosphorus) to control the criticality of the TFT. Here, the amorphous silicon film is doped with boron by the ion doping of hexahydrogen diboride (B2H6) which is excited by the plasma without a large amount of separation. The doping conditions include setting an acceleration voltage to 15 kV, a gas flow rate obtained by diluting hexahydrogen diboride to 1% with hydrogen to 30 seem, and a dose of 2 X 1012 / cm 2. Next, a nickel acetate solution containing 10 ppm of nickel was used from the cloth. Instead of application, nickel may be sprayed on the entire surface by sputtering. The semiconductor film is crystallized through heat treatment to obtain a semiconductor film having a crystalline structure. The heat treatment is performed in an electronic furnace or illuminated by strong light up to the paper size. Applicable to China National Standard (CNS) A4 (210X297 mm) -39-566054 A7 B7 V. Description of the invention (37) (Please read the note on the back first Please fill in this page). When heat treatment is used in an electric furnace, the temperature is set to 500 to 650 ° C and the heating is continued for 4 to 24 hours. Here, a silicon film having a crystal structure was obtained from the heat treatment of crystallization (550 ° C for 4 hours) after the heat treatment of dehydrogenation (500 ° C for 1 hour). Although the semiconductor film is crystallized by heat treatment using an electronic furnace in this case, it may be crystallized by a lamp annealing apparatus capable of achieving crystallization in a short time. This example uses crystallization technology that uses nickel as a metal component to accelerate the crystallization of silicon. However, other known crystallization techniques may be used, such as solid phase growth and laser crystallization. Printed on the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The oxide film on the surface of the silicon film with a crystalline structure is removed by dilute fluoric acid or the like. In order to enhance the crystallization rate and repair the defects remaining in the crystal grains, the silicon film was irradiated with laser light (XeCl, wavelength: 308 nm) in the air or in an oxygen atmosphere. The laser light may be excimer laser light with a wavelength of 400 nm or less, or the second or third harmonic of a YAG laser. Pulsed laser light with a repetition frequency of 10 to 1000 Hz is used. Laser light is collected by the optical system to scan the surface of the silicon film with an energy density of 100 to 500 mJ / cm2 and an overlap ratio of 90 to 95%. Here, the film was irradiated with laser light in air at a repetition frequency of 30 Hz and an energy density of 100 to 500 mJ / cm2. After the oxide film formed during the irradiation of the laser light is removed by using hydrogen fluoride, the second laser light is irradiated in nitrogen or vacuum to flatten the surface of the semiconductor film. Excimer laser light having a wavelength of 400 nm or less, or the second or third harmonic of YAG, is used as the laser light (second laser light). In addition, light emitted from UV lamps may also be used instead of excimer lasers. It should be noted that the energy density of the second laser light is made larger than that of the first paper. The Chinese national standard (CNS) A4 specification (210X297 mm) is applied. -40- 566054 A7 B7 V. Description of the invention (38) The energy density is preferably 30 to 60 mJ / cm2. (Please read the precautions on the back before filling out this page) The laser light irradiation at this point is very important because it is used to form a silicon film with a crystalline structure by sputtering gas in the later film molding to avoid the formation of a silicon film with a crystalline structure. Doped oxide film and because it enhances the outgassing effect. The oxide film formed by the laser light irradiation and the oxide film formed on the treated surface with ozone water for 120 seconds were fabricated together with a barrier layer having a thickness of 1 to 5 nm. Next, an argon-containing amorphous silicon film is formed on the barrier layer by sputtering to function as a degassing point. The thickness of the amorphous silicon film is 50 to 400 nm, here it is 15 nm. The conditions for forming the amorphous silicon film include setting the film forming pressure to 0.3 Pa, the gas (Ar) flow rate to 50 seem, the film forming power to 3 kW, and the substrate temperature to 150 ° C. The amorphous silicon film formed under the above conditions contains an argon atom concentration of 3 X 102 () to 6 X IO ″ / cm3 and an atomic concentration of oxygen thereof of 1 X 1019 to 3 X 1019 / cm3. After that, the heat treatment system The lamp annealing equipment is used to degas for 6 minutes for 3 minutes. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and used a barrier layer as an etching stopper. Selective removal. Next, the barrier layer is selectively removed by dilute fluoric acid. Nickel tends to move to areas with high oxygen concentrations during degassing, and therefore it wants to be removed as oxidation after degassing The barrier layer of the film. Next, a thin oxide film is formed on the surface of the obtained silicon film (also called a polysilicon film) containing a crystalline structure using ozone water. An anti-saturation mask is then formed and the silicon film is Etching to form island-like semiconductor layers separated from each other and having a desired shape. After the semiconductor layer is formed, the resist mask is removed. Furthermore, after the semiconductor layer is formed, in order to control the threshold of the TFT (this paper uses China National Standard (CNS) A4 specification (210X297 male %) '~--41-566054 A7 B7 V. Description of the invention (39) (Please read the precautions on the back before filling out this page) V th)' The semiconductor layer may be doped to give p_type or n_type conductivity Impurity impurity elements. Impurity elements known to impart semiconductor p-type conductivity are group 13 elements in the periodic table, such as boron (B), aluminum (A1), and gallium (Ga). It is known to impart semiconductor n-type conductivity. The impurity elements are group elements in the periodic table 15 such as phosphorus (P) and arsenic (As). Next, a thin oxide film is formed from ozone water on a sand film (also known as a polysand film) having a crystalline structure. ). The resist mask is formed as an etch to obtain semiconductor layers 602 to 605 having a desired shape and separated from each other like islands. After the semiconductor layer is obtained, the resist mask is removed. The etching agent of the M acid is removed, and at the same time, the surface of the sand film is rinsed. Then, an insulating film mainly containing silicon is formed to function as the gate insulating film 607. In order to form the gate insulating film 607, the object with Si as the target is A silicon oxide film and a silicon nitride film formed by a sputtering method are formed by The silicon oxynitride film formed by the plasma CVD method, and the silicon oxide film may be used. Here, the gate insulating film is a silicon oxynitride film formed by the plasma CVD method (composition ratio ·· S i = 3 2%, 〇 = 5 9%, N = 7%, Η = 2%) to have a thickness of 11 5 nm. As shown in FIG. 7A, the first consumer film 608 of the Intellectual Property Bureau of the Ministry of Economic Affairs has a first conductive film 608 having a thickness of 20 to 100 nm. It is laminated on the gate insulating film 607. In this example, a 30 nm thick nitride film and a 370 nm thick tungsten film are laminated on the gate insulating film 607 in the stated order. The conductive material of the first conductive film and the second conductive film is an element selected from the group consisting of Ta, W, Ti, Mo, A1, and Cu, or an alloy or composite mainly containing the above elements. The first conductive film and the second conductive film may be semiconductors. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -42-566054 A7 --___ _B7_ 5. Description of the invention (4〇) (Please read first Note on the back, please fill out this page again) ^ 'Typically a polycrystalline silicon film, doped with phosphorus or other impurity elements or maybe an Ag-Pd-Cu alloy film. The invention is not limited to a two-layer structured conductive film. For example, 'may use a three-layer structure with a 50-nm-thick tungsten film, a 500-nm-thick aluminum-silicon alloy (Al-SU film'), and a 30-nm-thick titanium nitride film in this order. When using a three-layer structure, the first The tungsten of the conductive film may be replaced by tungsten nitride, the aluminum-silicon alloy (Al-Si) film of the conductive film may be replaced by an aluminum-titanium alloy (Al-Ti) film, and the titanium nitride film of the third conductive film may be It is replaced by a titanium film. In addition, a single-layer conductive film may be used. As shown in FIG. 6B, the resist masks 610 to 613 are formed of light exposed to perform a first uranium etching process for forming a gate electrode and wiring. First The etching process is performed under the first and second etching conditions. ICP (Inductively Coupled Plasma) etching is used. The film can be etched using ICP and the etching conditions can be adjusted (the amount of power applied to the winding electrode to the substrate end electrode) The amount of power, the temperature of the substrate terminal electrode, etc.) and appropriately etched into the desired cone shape. Examples of the etching gas used include a chlorine-based gas, typically, C12, BCh, SiCl4 or CC14, a fluorine-based gas, Typically, CF4, SF6, or NF3, and 〇2. The Intellectual Property Bureau employee consumer cooperative printed the base end (sampling phase) also received 150W of RF (13.56 MHz) power to substantially apply negative self-bias. The area (size) of the base end electrode is 12.5 cm X 12.5 cm And the winding electrode is a 25 cm diameter disc (here, a quartz disc with a coil). The W film is sharpened around the edge under these first uranium engraving conditions. In the first uranium engraving condition Now, the rate of etching the W film is 200.39 nm / min, and the rate of etching the TaN film is 80.32 nm / min. The selection ratio of W to TaN is therefore about 2.5. The W film system applies the Chinese National Standard (CNS) at this paper scale. A4 specification (210X297 mm) -43- 566054 A7 B7 V. Description of the invention (41) Approximately 26 ° is sharpened under the first etching condition. After that, the first etching condition is switched to the second etching condition without removing the resistance. Etching masks 610 to 613. The second etching conditions include using CF4 and C12 as etching gases, setting the gas flow rate ratio to 30: 30 (seem), and giving 500W of RF (13.56 MHz) power to 1 Pa pressure to The electrodes are wound to produce a plasma that is etched for about 30 seconds. Substrate The end (sampling phase) also receives 20W of RF (13.56 MHz) power to substantially apply negative self-bias. Under the second uranium etching conditions including the mixed use of CF4 and C12, the TaN film and W film are etched to about The same degree. Under the second etching conditions, the rate of etching the W film by uranium is 5 8.9 7 nm / min, and the rate of uranium 11 TaN film is 66.43 nm / min. In order to etch the film without leaving any residue On the gate insulating film, the etching time is extended by approximately 10 to 20%. In the first uranium engraving process, the first conductive layer and the second conductive layer are changed from forming an anti-uranium mask to an appropriate shape and are sharpened around the edges by the effect of the bias applied to the substrate end. The angle of the tapered part may be 15 to 45 °. First-shaped conductive layers 615 to 618 (first conductive layers 615a to 618a and second conductive layers 615b to 618b) are formed, and are formed of the first conductive layer and the second conductive layer by a first etching process. The insulating film 607 to be the gate insulating film is etched for 10 to 20 nm to form a gate insulating film 620 having a thinned area where the first-shaped conductive layers 615 to 618 do not overlap. Next, a second etching process is performed without removing the mask made of resist. Here, SF6, Ch, and 〇2 are used as the engraving gas. The gas flow rate is set to 24/12/24 seem, and the 700W RF (13.56 MHz) power is applied to the winding at a pressure of 1.3 Pa. Shape electrode to generate plasma. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page)-Installation-Ordered by the Ministry of Economic Affairs Intellectual Property ^ Printed by Employee Consumer Cooperative -44- 566054 A7 B7 V. Description of the Invention (42) (Please read the precautions on the back before filling in this page) to perform uranium carving for 25 seconds. 10W of RF (13.56 MHz) power is also applied to the base (sampling phase) to substantially apply negative self-bias. In the second etching process, the etching rate of W is 2 2 7 · 3 nm / min. The etching rate of TaN is 32.1 nm / min, the selection ratio of W to TaN is 7.1, and SiON is an insulating film 620. The etching rate is 33.7 nm / min 'and the selection ratio of W to SiON is 6.83. In the case where SF6 is used as the uranium etching gas, the selection ratio with respect to the insulating film 620 is as high as described above. Therefore, reduction in film thickness can be suppressed. In this embodiment, the film thickness of the insulating film 620 is only reduced by about 8 nm. With the second etching process, the taper angle of W becomes 70 °. By the second uranium etching process, the second conductive layers 621b to 624b are formed. On the other hand, the 'first conductive layer is hardly etched by uranium to become the first conductive layers 621a to 624a. It is to be noted that the first conductive layers 621a to 624a have substantially the same size as the first conductive layers 615a to 618a. In fact, the width of the first conductive layer may be reduced by approximately 0.3 // m, that is, the bus width before the second uranium etching process is close to 0.6 // m. However, the size of the first conductive layer is hardly changed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, in the example of replacing the two-layer structure, a three-layer structure is adopted, in which a 50-nm thick tungsten film and a 500-nm-thick iLu and sand (Al-Si) alloy film And 30 nm thick titanium nitride films are sequentially stacked. Under the first etching conditions of the first etching process, BCh, Cl2 and O2 are used as the material gas; the flow rate of the gas is set to 65/10 / 5 (seem); 300W RF (13.56 MHz) power is applied to the substrate (sampling phase); and 450W RF (13.56 MHz) power is applied to the wound electrode at a pressure of 1.2 Pa to generate plasma, Uranium engraving was performed for 11 7 seconds. As for the first paper size, the Chinese National Standard (CNS) A4 specification (210X29? Mm) -45- 566054 A7 -B7 V. Description of the invention (43) A second etching condition for the etching process, using CF4, Ch and 〇2 , The gas flow rate is set to 25/25/5 (seem), · 20W RF (13.56 MHz) power is applied to the base end (sampling phase); and 500W RF (13 · 56ΜΗζ) power is based on IPa pressure Applied to a wound electrode to generate a plasma. Due to the above conditions, it is sufficient that the uranium carving is performed for 30 seconds. In the second uranium etching process, using BCh and Cl2, the gas flow rate was set to 20/60 (seek); 100W RF (13.56 MHz) power was applied to the base end (sampling phase); and 600W RF (13 56 MHz) Power is applied to the wound electrode at a pressure of 1.2 Pa to generate plasma, thereby performing etching. Next, the mask made by the anti-uranium agent is removed, and then, a first doping process is performed to obtain the state of FIG. 8A. The doping process may be performed by ion doping or ion implantation. The ion doping is performed under the conditions of a doping amount of 1.5 X 1014 atoms / cm2 and an acceleration voltage of 60 to 100 keV. As an impurity element that imparts η-type conductivity, phosphorus (P) or Ishishin (As) is typically used. In this example, the first conductive layer and the second conductive layers 621 to 624 become masks resistant to the impurity elements imparted to the n-channel TFT, and the first impurity regions 626 to 629 are formed in a self-correcting manner. The impurity element imparting? -Type conductivity is added to the first impurity regions 626 to 629 at a concentration range of 1 X 1016 to 1 X 1017 / cm3. Here, a region having the same concentration as the first impurity region is also referred to as an f region. It should be noted that although the first doping process is performed after the removal of the mask made of the resist in this embodiment, the first doping process may be performed without removing the mask made of the anti-uranium agent. This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling out this page) Binding and printing Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives -46-566054 Α7 Β7 V. Description of the invention (44) (Please read the precautions on the back before filling out this page} Then, as shown in FIG. 8B, a mask 63 1 and 632 'made of a resist is formed and a second doping treatment is performed. The mask 631 is a mask for protecting the channel formation area of the semiconductor layer forming the p-channel TFT forming the driving circuit and its surroundings, and the mask 632 is a channel for protecting the semiconductor layer of the TFT (switching TFT) forming the pixel portion. A mask is formed in the area and its surroundings. Ion doping conditions for the second doping process: 1.5 X 1015 atoms / cm2 doping amount and an acceleration voltage of 60 to 100 keV, doped with phosphorus (p). Here, impurities The regions are formed in the respective semiconductor layers in a self-correcting manner using the second conductive layers 621b to 624b as a mask. Therefore, second impurity regions 634 to 636 and third impurity regions 637 to 639 are formed. Η-type conductivity is given Sexual impurity element system The concentration range of 1 X 102 () to 1 X 1021 / cm3 is added to the second impurity region. Here, the region having the same concentration as the second impurity region is also referred to as the n + region. Employees' Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs Further printing, the third impurity region is formed by the first conductive layer at a lower concentration than the second impurity region, and the impurity element imparting P-type conductivity is added in a concentration range of 1 X 1018 to 1 X 1019 / cm3. It should be noted that because the doping is performed by the portion having the first conductive layer having a tapered shape, the third impurity region has a concentration gradient in which the impurity concentration increases toward the end portion of the tapered portion. The region with the same concentration region is also referred to as the η · region. Furthermore, the region covered by the mask 632 is not added with an impurity element in the second doping process, and becomes the first impurity region 63 8. After removing the resist masks 631 and 632, the resist masks 639, 640, and 633 are newly formed, and the third doping process is performed as shown in FIG. 8C. This paper scale applies Chinese national standards ( CNS) Α4 specifications (21 0 乂 297 mm) -47- 566054 A7 B7 V. Description of the invention (45) In the driving circuit, the fourth impurity region 641 and the fifth impurity region 643 are formed by the third doping treatment as described above, and the An impurity element of p-type conductivity is added to the semiconductor layer forming the P-channel TFT and the semiconductor layer of the storage capacitor. Further, the impurity element imparting P-type conductivity is 1 X 102 () to 1 X A concentration range of 1021 / cm3 is added to the fourth impurity region 641. It is to be noted that in the fourth impurity region 641, phosphorus (P) has been added in the previous step (n ... region), but the impurity element imparting P-type conductivity is added at a concentration of 1.5 to 3 times higher phosphorus. Therefore, the fourth impurity region 641 has p-type conductivity. Here, a region having the same concentration as the fourth impurity region is also referred to as a P + region. Further, the fifth impurity region 643 is formed in a tapered portion overlapping the second conductive layer 122a, and an impurity element imparting P-type conductivity is added in a concentration range of 1 X 1018 to 1 X 102 () / cm3. Here, a region having the same concentration as the fifth impurity region is also referred to as a P · region. Through the above steps, an impurity region having η-type or ρ-type conductivity is formed in each semiconductor layer. The conductive layers 621 to 624 become the smell electrodes of the TFT. Next, an insulating film (not shown) is formed to cover substantially the entire surface. In this embodiment, a 50 nm thick silicon oxide film is formed by plasma CVD. Of course, the insulating film is not limited to a silicon oxide film, and other silicon-containing insulating films may be used in a single layer or a stack. Next, a step of operating an impurity element added to each semiconductor layer is performed. In this operation step, the rapid thermal annealing (RTA) using a light source is used. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page). Department of Economics Printed by the Intellectual Property Bureau's Consumer Cooperatives -48- 566054 A7 _ B7 V. Description of the Invention (46) Method 'Method of radiating light emitted from a YAG laser or an excimer laser from the back, using a furnace heat treatment, or Its combination is used. (Please read the precautions on the back before filling in this page.) Further, although an example of forming an insulating film is shown in this example before the operation, the step of forming the insulating film may be performed after the operation is performed. Next, the first inner layer insulating film 153 is formed of a silicon nitride film and is subjected to a heat treatment (300 to 550 ° C for 1 to 12 hours), thereby performing a step of hydrogenating the semiconductor layer. (FIG. 9A) The first inner layer insulating film 645 may be a stacked structure composed of a silicon oxynitride film and a silicon nitride film. In this step, the dangling bonds of the semiconductor layer are terminated by hydrogen contained in the first insulating film. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film formed of a silicon oxide film. Incidentally, in this embodiment, a material containing aluminum as its main component is used as the second conductive layer, and therefore, it is important to apply heat treatment conditions that the second conductive layer can withstand in the hydrogenation step, Perhaps plasma hydrogenation (using ammonia excited by plasma). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, the second inner layer insulating film 646 is formed on the first inner layer insulating film 645 from an organic insulating material. In this embodiment, an acrylic resin having a thickness of 1.6 // m is formed. Then, the connection holes reach the impurity regions. In this embodiment, a plurality of etching processes are performed continuously. In this embodiment, the second inner insulating film is etched using the first inner insulating film as a uranium stopper, the first inner insulating film is etched using the inner insulating film as an etch stopper, and then , Uranium etched insulation film (not shown).

Furthermore, in order to avoid the removal of oxygen, moisture emission, and the like generated from the inside of the second-layer insulating film 646 as in the second inner-layer insulating film 646, a barrier film 647 is formed. In particular, aluminum-containing insulation films, such as aluminum nitride (A1N, this paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) -49-566054 A7 B7 V. Description of the invention (47) (Please read the back first Note for refilling this page)} 'Aluminum oxide (ΑΙΝΟ), aluminum oxide (ΑΙΝΟ), silicon nitride (SiN), and silicon oxynitride (SiN〇), or silicon may be used to form 0.2 Barrier film to a thickness of 1 // m. In this example, a barrier film made of silicon nitride is formed by a sputtering method to have a thickness of 0.3 // m. In addition, it is used as a sputtering film used here. There are two-electrode sputtering method, ion beam sputtering method, or target sputtering method. After that, the wiring is made of Al, Ti, Mo, W and the like. As the electrode material of the pixel electrode, think A highly reflective material such as a film containing A1 or Ag is used as its main component or a laminated film of the above film. Therefore, wirings 650 to 657 are formed. As described above, it has η-channel TFT 710 and p-channel Driving circuit 705 for TFT 7 02, and switching TFT 703 with η-channel TFT and current control with η-channel TFT The pixel portion 706 of the TFT 704 can be formed on the same substrate. (Figure 9C) In this specification, for convenience, the above substrate is referred to as an active matrix substrate. In the pixel portion 706, the switching type TFT 703 (η-channel TFT) The Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed a channel formation region 503, a first impurity region ([region] 63 8 formed outside the conductive layer 623 forming the gate electrode, and functions as a source Or the second impurity region (n + region) of the drain region 63 5. In the pixel portion 706, a TFT 704 (n-channel TFT) as a current control has a channel formation region 504, and a gate electrode is formed by overlapping a part via an insulating film. The third impurity region (n_region) 639 of the conductive layer 624, and the second impurity region (n + region) functioning as a source or drain region 636 ° This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) -50- 566054 A7 ______B7 V. Description of the invention (48) (Please read the precautions on the back before filling in this page) Further * Step 'in the driving circuit 705' η-channel TFT 701 has channel formation area 5 0 1 A first impurity region (n_region) 637 of a conductive layer 621 forming a gate electrode is partially overlapped via an insulating film, and a second impurity region (n + region) 634 functioning as a source or drain region. Further, in a driving circuit In 705, the p-channel TFT 702 has a channel forming region 502, a fifth impurity region (region) 643 which overlaps a part of the conductive layer 621 forming an odor electrode via an insulating film, and a fourth impurity region (region) 643 which functions as a source or drain region Impurity region (P + region) 641. The above TFTs 701 and 702 are appropriately combined to form a displacement resistance circuit, a buffer circuit, a level displacement circuit, a latch circuit, and the like, thereby forming a driving circuit 705. For example, in the example where the CMOS circuit is formed, the n-channel TFT 701 and the p-channel TFT 702 may be connected to each other in a complementary manner. In addition, the structure of the η-channel TFT 701 of GOLD (gate-drain overlapped LDD) formed by overlapping LDD regions (slightly doped drains) having gate electrodes is a circuit having the highest authority for reliability. Appropriate. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In particular, the structure of the η-channel TFT is suitable for a buffer circuit having a high driving voltage in order to avoid deterioration due to the hot carrier effect. It should be noted that the TFTs (η-channel TFT and p-channel TFT) in the driving circuit 705 need to have a high driving capacity (on current: ι〇η) and avoid deterioration due to the hot carrier effect to improve reliability. degree. A TFT having a region where a gate electrode overlaps a low-concentration impurity region through a gate insulating film is used as a effective 避 to avoid deterioration of the on-state current 热 due to hot carriers. It should be noted that the switching TFT 703 of the pixel portion 706 requires a low level. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -51-566054 A7 _ B7 V. Description of the invention (49) Closed current ( Ioff). A structure having a region where a gate electrode does not overlap a low-concentration osmium region through a gate insulating film is used as a TFT structure to reduce an off current. Next, an insulating film is formed. Silicon oxide, silicon nitride, or oxynitride may be used as a silicon-containing insulating material. Polyene amines (including photosensitive polyamines), polyamines, acrylics (including photosensitive acrylics), BCB (cyclobutene) or the like can be used as organic resins. The opening portion is formed at a portion corresponding to the pixel electrode 657 of the insulating film to form an insulating film 65 8 (FIG. 10A). In addition, the insulating film is formed using a photosensitive polyalkyleneamine to have a thickness of 1 // m, and after the pattern is implemented by photolithography, the insulating film 658 is formed by performing an etching process. On the exposed pixel electrode 657 in the opening portion of the insulating layer 658, the cathode 659 is patterned to be formed by a vapor phase method using a metal mask. For certain cathode materials, it is best to use low-power materials to improve the injection of electrons, such as alkali metals, materials that belong to alkaline earth metals, and elemental materials of transition metals, including rare earth metals, or stacked with other materials. Compounds made of other materials (for example, CsF, BaF, CaF, and the like) are formed, and alloys made of other materials (for example, A1: Mg alloy, In alloy, and the like) are formed. In this embodiment, the cathode may be formed by using CsF to have a thickness of 5 nm. The organic composite layer 660 is formed on the cathode 659 by a vapor phase method using a metal mask (FIG. 10A). Here, a description will be given of a method of forming an organic composite layer formed of an organic composite emitting three kinds of light, red, green, and blue. The detailed description of the organic complexes forming the three organic complex layers is as follows. This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) Approval-(Please read the precautions on the back before filling out this page), · ιτο Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -52 -566054 A7 __B7_ 5. Description of the invention (50) (Please read the precautions on the back before filling out this page) First, form an organic compound layer that emits red light. In particular, tris (8-quinoline A) aluminum (hereinafter referred to as Alq3) as an electron-transporting organic complex was formed into an electron-transporting layer having a film thickness of 40 nm. Basocuproin (hereinafter referred to as BCP), which is a barrier organic compound, is formed into a barrier layer with a film thickness of 10 nm. As a cold light organic compound, 2,3,7,8,12,13,17,18-octaethyl-21 to 231 pioline-platinum (hereinafter referred to as PtOEP) are mutually deposited to have the formation of an organic compound The light-emitting layer (hereinafter referred to as a main material) 4,4′-biscarbazole-diphenyl (hereinafter referred to as CBP) functions as a main material with a film thickness of 30 nm. As a hole-transporting organic complex, 4, f-di [N- (1-naphthyl) -N-phenyl-amino] -diphenyl (hereinafter abbreviated as a-NPD) system is formed to become 40 nm Film thickness hole transport layer. Thereby, a red light organic composite layer can be formed. Although an example of forming a red-light organic composite layer using five kinds of organic composites having different functions is explained here, the present invention is not limited thereto, and a known material can be used as the organic composite that displays red light. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A green light organic complex layer was formed. In particular, Alq3, which is an electron-transporting organic complex, is formed into an electron-transporting layer with a film thickness of 40 nm. As a barrier organic compound, BCP was formed into a barrier layer with a film thickness of 10 nm. The light-emitting layer is formed by a CBP system used as a hole transport host material with a thickness of 30 nm co-deposited with tris (2-phenylpyridine) iridium (Ir (ppy) 3). The a-NPD, which is a hole-transporting organic complex, is formed into a hole-transport layer with a film thickness of 40 nm. Thereby, a green light organic composite layer can be formed. Although it is explained here that 4 kinds of organic compounds with different functions are used, this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 566054 A7 B7 5. Description of the invention (51) Forming a green light organic compound As an example of an object layer, the present invention is not limited thereto, and a known material can be used as an organic compound that displays green light. (Please read the notes on the back before filling out this page) A blue light organic compound layer was formed. In particular, Alq3, which is an electron-transporting organic complex, is formed into an electron-transporting layer 1 007 with a film thickness of 40 nm. The BCP as a barrier organic compound was formed into a barrier layer 1006 with a film thickness of 10 nm. The a-NPD, which is used as a light-emitting organic compound and a hole-transporting organic compound, is formed into a light-emitting layer 1 005 with a film thickness of 40 nm. Thereby, a blue light organic composite layer can be formed. Although an example in which a blue light organic composite layer is formed using three kinds of organic composites having different functions is explained here, the present invention is not limited thereto, and a known material can be used as the organic composite that displays blue light. By forming the organic compound on the anode, an organic compound layer emitting red, green, and blue light can be formed in the pixel portion. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, as shown in FIG. 10B, the protective layer 661 is formed by overlapping an organic compound layer 6 60 and an insulating layer 6 5 8. In addition, a conductive film having a transmittance of visible light of 70 to 100% and a power of 4.5 to 5.5 may be used as a metal material for forming the protective layer 661. There are many metal films that are not transparent to visible light, so that the thickness of the protective layer is formed to have a thickness of 0.5 to 5 nm. In this example, the protective layer is formed in a bundle shape having a thickness of 4 nm. Next, an anode 662 is formed. In the present invention, since light generated in the organic compound layer 660 is irradiated through the anode 662, a material that is transparent to the light is used to form the anode 662. And, because the anode 662 injects electrons into the organic composite layer 660, low-power materials are needed to form the anode. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -54- 566054 Α7 Β7 V. Description of the invention (52) 660. Next, in this embodiment, the anode system is formed using ITO to have a thickness of 100 nm. As shown in FIG. 10B, a pixel electrode 657 electrically connected to the current control TFT 704, and an insulating layer 658 formed between the pixel electrode 657 and an adjacent pixel electrode (not shown) are formed on the pixel electrode 657. A cathode 659, an organic composite layer 660 formed on the cathode 659, a protective layer 661 formed on the organic composite layer 660 and the insulating film 658, and a light-emitting element 663 made of the anode 662 formed on the protective layer 661 Elemental substrates may be formed. In the manufacturing steps of the light-emitting device of this example, because of the circuit structure and steps, the source wiring is formed using the material forming the gate electrode, and the scanning wiring is formed using the material forming the wiring connected to the source region and the drain region. form. Also, different materials can be used separately. In addition, an example of a system for controlling the gate of a TFT by inputting a current to a predetermined voltage based on a self-source wiring input image signal (hereinafter, this system is referred to as a fixed voltage driving system), or an input based on a self-source signal line The predetermined current of the image signal is an example of a system (hereinafter referred to as a fixed current driving system) input from the current control TFT 704 to manufacture the light-emitting device of the present invention. In addition, in this example, the driving voltage of the TFT is 1.2 to 10 V, and preferably 2.5 to 5.5 V. Further, in this example, FIG. 10B explains that a part of the light emitting structure is different. Examples are shown in FIG. 15. In FIG. 15, the pixel electrode 1501 is formed as shown in FIG. 10B. An insulating film 1 502 is formed to overlap an edge portion of the pixel electrode 1501. Here, this paper size applies the Chinese National Standard (CNS) A4 specification (210 mm 297 mm) (please read the precautions on the back and fill in this page)-installed, printed by 1T Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative -55- 566054 A7 -B7 V. Description of the Invention (53) The insulating film 1 502 is formed using an inorganic insulating material containing silicon such as silicon nitride, silicon oxide, and silicon oxynitride to have a range of 〇. 丨 to 0.3. // m thickness. In particular, the 'silicon nitride film is formed by sputtering so as to have a thickness of 0 · 2 // m. As described above, 'the formation of the insulating film using an inorganic insulating material 502 is effective for reducing water or organic gas released from a material using an organic resin film in comparison. Fig. 15B shows a top view of a part of pixels in the example having the structure of Fig. 15A. In the pixel portion 1 5 11, a plurality of pixels 1 5 1 2 are formed. The top view shown here is an example of a state manufactured through the insulating layer 1 5 02 of FIG. 5a. Therefore, an insulating film 1502 is formed so as to overlap the source wirings 1 5 1 3 ', the scanning lines 1 5 14 and the current supply lines 1 5 1 5. The insulating layer 1 502 also overlaps the area a 1 503 of the connection portion of the TFT and the pixel electrode formed at the bottom. Fig. 15C is a cross-sectional view taken along the line A-A of the pixel portion 1511. Furthermore, the state of manufacture of the pixel electrode 1 501 via the cathode 1 504 and the organic composite layer 1505 is illustrated in FIG. 5c. The organic composite layer is formed of the same material in the longitudinal direction of the surface, and the organic composite layer is formed of the different materials in the lateral direction of the surface. For example, the red-light organic composite layer (r) 1550a is formed in the pixel (R) 1512a in FIG. 15B, and the green-light organic composite layer (g) 1 5 05b is located in the pixel ( R) is formed in 1512b, and the blue light organic composite layer (B) 1 505c is formed in pixel (R) 1512c. The insulating layer 1 502 is the boundary of the organic composite layer. If the organic compound layer formed from different materials is closed by a small amount of organic deposition area and overlaps the insulating layer, then this paper size does not apply the Chinese National Standard (CNS) A4 specification (21〇297297) (please first Read the notes on the back and fill out this page) • Equipment-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-56- 566054 A7 B7 V. Explanation of the Invention (54) There is a problem. Fig. 15D is a cross-sectional view taken along line B-B 'of the pixel portion 1511. And the state manufactured through the cathode 1504 and the organic composite layer 1 505 on the same pixel electrode 1501 as that in FIG. 15C is exemplified in FIG. 15D. The pixels taken along the line B-B 'have the structure shown in Fig. 15D because the red organic composite layer (R) 1 505a is formed in the same manner as the pixel (R) 1512a. When the display of the pixel portion is active (example of moving image display) ’The background is displayed by pixels that emit light and the characters are displayed by pixels that do not emit light. However, in the case where the moving image display of the pixel portion is stationary for a certain period or more (referred to as the preparation time in this specification), it is appropriate to change (invert) the display method in order to save power. In particular, the characters are displayed by pixels (also referred to as character displays) that emit light from the light emitting element, and the background is displayed by pixels (also referred to as background display) that are not illuminated by the light emitting element. Example 4 In this example, a portion of the structure that is different from the light emitting device shown in Example 3 will be described below with reference to FIG. 1. In Fig. 11A, a wiring 670 is formed instead of the pixel electrode formed in Fig. 9C. Subsequently, a third inner-layer insulating film 671 covering the wiring 670 is formed. It should be noted that as the material used as the third inner-layer insulating film 67 1 formed here, it can be formed using the materials used in forming the first and second inner-layer insulating films. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) " " -57- (Please read the precautions on the back before filling this page) -Packing ·

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T 566054 A7 B7 V. Description of Invention (55) (Please read the precautions on the back before filling this page) Next, connect the wiring on the third inner insulation film 671. A pixel electrode 672 is formed after an opening is formed on the overlapped portion 670. It should be noted that as a material for forming the pixel electrode 672, it can be formed using a molding material used as the wiring 67 °. Further, an insulating layer 673 is formed so as to cover an edge portion of the pixel electrode 672, and a cathode 674 and an organic composite layer 675 are formed on the pixel electrode 672. It should be noted that regarding the material for forming the insulating layer 673, the insulating layer is formed with a film thickness of 1 // m using a photosensitive polyene amine similar to that of Example 3. From the above description, the protective layer 676 and the anode 677 are formed on the organic compound layer 675 and the light-emitting element 678 is completed as shown in FIG. 11B. It should be noted that after the pixel electrode 672 has been formed, it is omitted because it can be formed by a method similar to that in Example 3 regarding the manufacturing steps. It should be noted that because the area of the pixel electrode can be increased by making a structure similar to that shown in this example, in an upper surface injection type light-emitting device like the present invention, the aperture ratio can be further enhanced. Printed by the Intellectual Property of the Ministry of Economic Affairs and Consumer Cooperatives. Further, a part of the structure of the light-emitting device shown in FIGS. In FIG. 16, the pixel electrode 1 60 1 is formed similarly to FIG. 11B. Next, an inorganic insulating film 1 602 is formed so as to cover the edge portion, but here, it is formed into a film of 0.1 to 0.3 // m using a silicon-containing material such as silicon nitride, silicon oxide or silicon oxynitride or a similar organic insulating material. thickness. Specifically, the silicon nitride film is formed by a sputtering method with a thickness of 0.2 // m. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 58-566054 A7 B7

As described above, in order to reduce the release of water or organic gas from the material, or the like, it is more effective to form the inorganic insulating film 1 602 using an inorganic insulating material in comparison with an example formed using an organic resin film. fPlease read the notes on the back before filling this page.) Example 5 In this example, the pixel structure of the pixel portion of the light-emitting device driven by the fixed current drive method will be described below. The pixel 1 3 1 〇 shown in FIG. 13 has a signal line S i (one of S 1-SX), a first scan line Gj (one of G 1-Gy), and a second scan line Pj ( Pl-Py) and power source Vi (one of VhVx). The pixel 1310 includes Tr1, Tr2, Tr3, and Tr4, a light-emitting element 1311, and a storage capacitor 1312.

The gates of Tr3 and Tr4 are connected to the first scan line Gj. As for the source and the drain of Tr3, one of them is connected to the signal line S i and the other is connected to the source of Tr2. And, as for the source and the drain of Tr4, one of them is connected to the source of Tr2, and the other is connected to the gate of Tr1. In particular, the source and drain of Tr3 and the source and drain of Tr4 are not connected. Printed by the Intellectual Property of the Ministry of Economic Affairs

The source of Trl is connected to the power line Vi, and the drain is connected to the source of Tr2. The gate of Tr2 is connected to the second scan line Pj. Then, the drain of Tr2 is connected to the light-emitting element 1 3 11 formed on the pixel electrode via the pixel electrode. The light-emitting element 1 3 11 has a cathode, an anode, and an organic composite layer provided between the cathode and the anode. The anodes of the light-emitting elements 1 to 11 are given a certain voltage by a power source provided outside. It should be noted that Tr3 and Tr4 may be n-channel TFT or p-. This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) -59- 566054 A7 _ B7 V. Description of the invention (57) ( Please read the notes on the back before filling this page) Channel TFT. However, the polarities of Tr3 and Tr4 are the same as each other. And 'Trl may be an n-channel TFT or a p-channel TFT. Tr2 may be an n-channel TFT or a p-channel TFT, but since the electrode connected to Tr2 in the present invention is a cathode, it is desirable to form Tr2 with an n-channel TFT. A reserve capacitor 1 3 1 2 has been formed between the gate and the source of Tr1. The retention capacitor 1312 has been set between the gate and the source of the Trl in order to ensure the sustain voltage (Vm), but it need not be set. In the pixel shown in Fig. 13, the current supplied to the power line is controlled by a current source provided in the signal line driving circuit. It should be noted that the configuration of the present invention can be realized by freely combining it with any of the configurations of Examples 1 to 4. Example 6: Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Cooperative. Referring to FIG. 12, in Example 4, the appearance of the light-emitting device of the present invention will be described. Fig. 12A is a top view of the light emitting device, and Fig. 12B is a cross-sectional view taken along line A-A 'of Fig. 12A. Reference numeral 1201 denotes a source terminal driving circuit shown by a dotted line; 1202, a pixel portion; 1 203, a gate terminal driving circuit; 1 204, a sealing substrate; and 1 205, a sealant. Surrounded by a sealant is a space. Reference numeral 1 207 denotes a transmission signal input to the source terminal driving circuit 1201 and the gate terminal driving circuit 1 203. The connection wiring 1 208 receives the image signal or clock signal from a flexible printed circuit (FPC) 1 209 which will be an external input terminal. Example FPC only, but a printed wiring board (PWB) may be attached to this FPC. The light-emitting device referred to in this specification may be light-emitting. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -60- 566054 A7 B7 V. Description of the invention (58) Device body, or FPC or PWB It is a product attached to the body. Referring to FIG. 12B, a cross-sectional structure will be described below. The driving circuit and the pixel portion are formed on the substrate 1210, but the source signal line driving circuit 1201 which is one of the pixel portion 1 202 and the driving circuit is shown in FIG. 12B. In the source terminal driving circuit 701, a CMOS circuit combining the n-channel TFT 1213 and the P-channel TFT 1214 is formed. The TFT constituting the driving circuit may include a known CMOS circuit, a PMOS circuit, or an NMOS circuit. In Example 4, the driving integrated system in which the driving circuit is formed on the substrate is exemplified, but the driving integrated system may not be necessarily used. The drive may not be mounted on the base but mounted on the outside. The pixel portion 1 202 includes a plurality of pixels including a current control TFT 121 1 and a pixel electrode 1212 electrically connected to a drain of the TFT 1211. On both sides of the pixel electrode 1 2 1 2, an insulating layer 1 2 1 3 is formed, a cathode 1214 is formed on the pixel electrode 1212, and an organic composite layer 2326 is formed on the cathode 1 2 1 4. Furthermore, a protective layer 1 2 1 6 is formed on the organic composite layer 1 2 1 5, and an anode 1 2 1 7 is formed on the protective layer 1 2 1 6. Therefore, a light-emitting element 1218 including a cathode 1214, an organic composite layer 1215, a protective layer 1216, and an anode 1217 is formed. The anode 1 2 1 7 also functions as a common wiring for all pixels. And the anode 1217 is electrically connected to the FPC 1 209 via the interconnection 1 208. In order to impeccably limit the light emitting element 1218 formed on the substrate 1 210, the sealing substrate 1 204 is adhered to the substrate 121 with a sealant 1 205. The spacer made of resin film may be established to keep the covering material 1 204 and the size of the paper. This paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page) I · Loading ·

'Printed by the Intellectual Property of the Ministry of Economic Affairs, Employees' Cooperatives -61-566054 A7 B7 V. Description of the Invention (59) (Please read the precautions on the back before filling this page) The specified interval between the 1 and 19 elements. An inert gas, such as a nitrogen-based gas, enters the space 1217 inside the sealant 1 205. It is best to use epoxy resin as the sealant. 1 205 ° Sealant 丨 205 wants to make the water content or oxygen as slightly transparent as possible. Furthermore, a material having a moisture absorption effect or a material having an anti-oxidation effect may be allowed to penetrate into the space 207. In Example 4, a glass substrate, a quartz substrate, or a fiber-reinforced plastic (FRP) plastic substrate, polyvinyl fluoride (PVF) 'polyester film, polymer, or polyacrylic resin may be used as the sealing substrate 1 204 materials. After the sealing substrate 120 is adhered to the substrate 1210 with the sealing agent 1205, the sealing agent is applied so as to cover the side surface (exposed surface). As described above, the light-emitting element is impeccably placed in the interval 1 207, so that the light-emitting element can be placed on the outside and the organic compound layer promotes deterioration of the material, such as water content and oxygen, to prevent intrusion into this layer from the outside. Therefore, a highly reliable light emitting device can be manufactured. When the light-emitting device formed by any of the structures of Examples 1 to 5 is unquestionably confined to the interior to manufacture the light-emitting device, the structure of Example 4 may be freely combined with the structure. Printed by the Intellectual Property of the Ministry of Economic Affairs ^ 7 Printed by an employee consumer cooperative Example 7 As a self-luminous device, a light-emitting device using a light-emitting element has better visibility and a wider viewing angle in a bright place than a liquid crystal display device. Therefore, various electric appliances can be completed by using the light-emitting device of the present invention. Examples of electric appliances using the light-emitting device manufactured according to the present invention are an imaging camera, a digital camera, and a goggle-type display (head-mounted display). The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -62- 566054 A7 B7 V. Description of the invention (60) (Please read the precautions on the back before filling this page), navigation system, sound reproduction device (such as car sounds and sound accessories), notebook computers, game consoles, portable Information terminals (such as mobile computers, mobile phones, portable game consoles, and e-books), and video reproduction devices equipped with recording media (especially, there are recording media such as digital video discs (DVDs) that can be reproduced to display data Device of the display device of the image). Wide viewing angles are particularly important for portable information terminals, because their screens are often tilted when looking at them. Therefore, it is best to use a light-emitting device using a light-emitting element for a portable information terminal. Specific examples of these appliances are shown in Figs. 14A to 14H. Fig. 14A shows a display device composed of a housing 2001, a base 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and the like. The light emitting device manufactured according to the present invention can be applied to the display unit 2000. Since the light-emitting device having a light-emitting element is a self-emission type, the device does not require a backlight and can be a thinner display than a liquid crystal display device. Display device refers to all display devices used for displaying information, including display devices for personal computers, display devices for TV broadcast reception, and display devices for advertisements. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Employee Consumer Cooperative Society. Figure 14B. Display body 2101, display unit Digital still camera 2102, image receiving unit 2103, operation key 2104, external port 2105, shutter 2106, etc. The light emitting device manufactured according to the present invention may be applied to the display unit 2102. Fig. 14C shows a notebook type personal computer composed of a main body 2201, a housing 2202, a display unit 2203, a keyboard 2204, an external port 2205 ', and an index mouse 2206. The light-emitting device manufactured in accordance with the present invention can be applied to the paper size of the display paper and applicable to the Chinese National Standard (CNS) A4 specification (21〇 > < 297 mm) -63- 566054 A7 B7 5. Description of the invention (61) display unit 2203. (Please read the precautions on the back before filling this page.) Figure 14D shows a mobile computer with a main body 230 1, a display unit 2302, a switch 2303, an operation key 2304, and an infrared port 2305. The light emitting device manufactured according to the present invention can be applied to the display unit 2302. Fig. 14E shows a portable video reproduction device (especially a DVD player) equipped with a recording medium. The device is composed of a main body 2401, a housing 2402, a display unit A 2403, a display unit B 2404, a recording medium (DVD or the like) reading unit 2405, operation keys 2406, and a speaker unit 2407. The display unit A 2403 mainly displays image information and the display unit B 2404 mainly displays text information. The light emitting device manufactured according to the present invention can be applied to the display units A 2403 and B 2404. The image reproducing apparatus equipped with a recording medium also includes a home video game machine. FIG. 14F shows a goggle-type display (head-mounted display) composed of a main body 2501, a display unit 2502, and an arm unit 2503. The light emitting device manufactured according to the present invention may be applied to the display unit 2502. Figure 14G shows the main body 2601, display unit 2602, housing 2603, external port 2604, remote control receiving unit 2605, image receiving unit 2606, battery 2607, sound input unit 2608, operation key 2609, and consumption of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs The cooperative prints an image camera composed of an eye block portion 2610 and the like. The light emitting device manufactured according to the present invention may be applied to the display unit 2602. FIG. 14H shows a mobile phone composed of a main body 2701, a housing 2702, a display unit 2703, a sound input unit 2704, a sound output unit 2705, an operation key 2706, an external port 2707, and an antenna 2708. The light emitting device manufactured according to the present invention may be applied to the display unit 2703. If the size of the display paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) ~ 566054 A7 B7 V. Description of the invention (62) Yuan 2703 shows white text on a black background, and the mobile phone consumes less power. (Please read the precautions on the back before filling this page) If the lightness of the light emitted from the organic material will increase in the future, the light emitting device can increase the output light containing image information through a lens or the like and project the light Light for front or rear projectors. These electric appliances now display animated information along with increasing frequency information sent via electronic communication lines such as, in particular, the Internet and CATV (cable television). Because organic materials have very fast response speeds, light emitting devices are suitable for animation display. In a light-emitting device, a light-emitting portion consumes power and therefore it is preferable to display information with less light-emitting portions required. When a light-emitting device is used in the display unit of a portable information terminal, especially a mobile phone and a sound reproduction device that mainly display text information, it is best to drive the device so that the non-light-emitting portion forms the background and the light-emitting portion forms the text information. As described above, the application range of the light-emitting device manufactured by using the arrangement device of the present invention is so wide that it can be applied to electric appliances in any field. The electric appliance of this embodiment can be completed by using the light-emitting devices formed by Production Examples 1 to 6. Example 8 printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Further, the light-emitting device of the present invention will have the structure shown in FIG. 8. Or non-photosensitive organic materials (Polyenamine, Acrylic, Polyamide'Polyenamine'Uranium Anti-Uranium Agent or Cyclobutene), these laminates or their paper dimensions are applicable to Chinese National Standards (CNS) A4 Specifications-65-566054 A7 B7 V. Description of Invention (63) (Please read the precautions on the back before filling out this page) Similar can be used as insulation covering the edge of cathode 1 803 (and wiring 1 8 1 3) Layer 1 8 14 (referred to as bank group, dividing wall, barrier, embankment or the like) 'e.g.' in the example of officially photosensitive acrylic used as an organic resin material 'as shown in Figure 18 The radius of curvature at the edge portion of the insulating material is a curved surface in the range of 0.2 to 2 / zm while keeping its angle at the contact surface to be 35 degrees or more. Also, as a material of the organic composite layer 1804 used as the light-emitting element 1 802, a material that emits white light can be used. In this example, it is formed by vapor deposition, for example, TPD (diamine fragrance), P-EtTAZ 'Alq3, Nile Red, partially red-emitting pigment Alq3 is doped and Alq3 may be from the cathode The sides of 1 803 are sequentially stacked and formed. Further, the passive film 1 8 1 5 may be formed on the anode 1 807 of the light emitting element 1 802 using an insulating material. It should be noted that at this time, as a material for the passive film 1 8 1 5, a laminated film formed of a silicon nitride film sandwiched between moisture absorbing materials can be used, except that Si is formed as a target. Outside the silicon nitride film. Furthermore, DLC film (like diamond carbon film), carbon nitride (CxNy) or the like can also be used. Printed by the Intellectual Property of the Ministry of Economic Affairs and Consumer Cooperatives. In the present invention, an element having a higher aperture ratio than the lower surface injection type light emitting device can be formed by manufacturing an upper surface injection type light emitting device. Furthermore, in the upper surface type injection light-emitting device, the electrode (lower part electrode) connected to the TFT is made into a cathode, and the electrode for taking out light is an anode system formed on an organic composite layer formed on the cathode. The light-emitting element which is different from the conventional upper-surface injection-type light-emitting device structure can be made of transparent, ITO, IZO electronic conductive film or has actual level properties. This paper standard applies Chinese National Standard (CNS) A4 specifications ( 210X 297 mm) -66- 566054 A7 B7 V. Description of the invention (64) Similar material as anode. Therefore, the present invention can solve the following contradiction. In the example of an element structure that extracts light from the cathode end of the upper electrode, a sufficient film forming system needs to maintain a function such as a cathode, and at the same time, an extremely thin film must be formed to Make sure that the translucent is used as an electrode for taking out light. Furthermore, the problem of damaging the organic composite layer during anode forming can be avoided by providing a protective layer between the organic composite layer and the anode (please read the precautions on the back before filling this page). The paper size printed by the consumer cooperative is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -67-

Claims (1)

566054 1 and printed by A8, B8, C8, D8, and Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. Patent application 1. A light emitting device comprising: a TFT provided on an insulating surface, and an inner layer insulating film formed on the TFT, A pixel electrode formed on the inner layer insulating film, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, and a layer of an organic composite formed on the cathode, A protective layer formed on the layer containing the organic composite, and an anode formed on the protective layer, and wherein the TFT includes a source region and a drain region, and the pixel electrode is formed on the inner insulating film. The opening is electrically connected to the source region or the drain region. The protective layer is made of a material having a power in the range of 4.5 to 5.5 eV. 2. The device according to item 1 of the patent application range, wherein the protective layer And the anode has a transmittance of 70- 100%. 3. The device according to item 1 of the scope of patent application, wherein the protective layer contains metal materials belonging to 9 groups, 10 groups, or 11 groups of the periodic table. 4. The device according to item 1 of the patent application scope, wherein the protective layer includes a material selected from the group consisting of gold, silver and lead. 5. The device according to item 1 of the scope of patent application, wherein the light emitting device is selected from a display device, a digital still camera, a notebook personal computer, a mobile computer, an image reproduction device with a recording medium, a goggle display, A device that mirrors a group of cameras and portable phones. (Please read the notes on the back before filling this page) -68- 566054 Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 2 6. A light-emitting device, including: a TFT provided on an insulating surface, and an inner portion formed on the TFT Layer insulating film, a pixel electrode formed on the inner layer insulating film, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, and an organic film formed on the cathode A layer of the composite, a protective layer formed on the layer containing the organic composite, and an anode formed on the protective layer, and wherein the TFT includes a source region and a drain region, and the pixel electrode is in the The opening formed by the inner insulating film is electrically connected to one of the source region or the drain region, and the protective layer has an average film thickness of 0.5-5 nm. 7. The device according to item 6 of the scope of patent application, wherein the protective layer and the anode have a transmittance of 70-100%. 8. The device according to item 6 of the scope of patent application, wherein the protective layer contains metal materials belonging to 9 groups, 10 groups or 11 groups of the periodic table. 9. A device according to item 6 of the patent application, wherein the protective layer comprises a material selected from the group consisting of gold, silver and platinum. 10. The device according to item 6 of the scope of patent application, wherein the light-emitting device is selected from a display device, a digital still camera, a notebook personal computer, a mobile computer, an image reproduction device with a recording medium, a goggle-type display, and an image Group of cameras and portable phones. 11. A light-emitting device comprising: This paper size is applicable to the Zhongguanjia Standard (210X297 mm) " ---- -69- (Please read the precautions on the back before filling this page) —-, 1T wire 566054 A8 B8 C8 _____ D8 VI. Application for patent scope 3 TFT provided on the insulating surface, the inner insulating film formed on the TFT, (Please read the precautions on the back before filling in this Page) a barrier film formed on the inner insulating film, a pixel electrode formed on the barrier film, an insulating film covering an edge portion of the pixel electrode, and a pixel electrode formed on the pixel electrode A cathode, a layer containing an organic compound formed on the cathode, a protective layer formed on the layer containing the organic compound, and an anode formed on the protective layer, and wherein the TFT includes a source region And the drain region, the pixel electrode is electrically connected to one of the source region or the drain region through an opening formed by the inner insulating film and the barrier film, and the cathode includes a group belonging to the periodic table Or 2 groups of metals, and this Sheath by a power line is 4.5 to 5 · 5 eV range of materials thereof. 12. The device according to item 11 of the scope of patent application, wherein the protective layer and the anode have a transmittance of 70-100%. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 13. The device according to item 11 of the scope of patent application, where the @f 漫 wei contains metal materials belonging to 9 groups, 10 groups or 11 groups of the periodic table. 14. The device according to item 11 of the scope of patent application, wherein the stomach comprises a material selected from the group consisting of gold, silver and platinum. 15. The device according to item 11 of the scope of the patent application, wherein the device is selected from a display device, a digital still camera, a note-taking computer, a mobile computer, an image reproduction device with a recording medium®, a goggles paper Standards apply to China National Standard (CNS) A4 specifications (210X297 mm 1 --- 70- 566054 Printed by employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 _ D8 VI. Patent application scope 4 type display, imaging camera and Group device of a portable telephone 16. 16. A light-emitting device comprising: a TFT provided on an insulating surface, an inner-layer insulating film formed on the TFT, and a resistor formed on the inner-layer insulating film A barrier film, a pixel electrode formed on the barrier film, an insulating film covering an edge portion of the pixel electrode, a cathode formed on the pixel electrode, and an organic compound formed on the cathode Layer, a protective layer formed on the layer containing the organic compound, and an anode formed on the protective layer, and the TFT includes a source region and a drain region The pixel electrode is electrically connected to one of the source region or the drain region through an opening formed by the inner insulating film and the barrier film. The cathode contains metals belonging to one or two groups of the periodic table. , And the protective layer has an average film thickness of 0.5-5 nm. 17. According to the device of the scope of application for patent No. 16, wherein the protective layer of the stomach and the anode have a transmittance of 70-100%. 18. According to the scope of the applied for patent The device of item 16, wherein the purpose #_ _ contains metal materials belonging to 9 groups, 10 groups, or 11 groups of the periodic table. 19. The device according to item 16 of the scope of patent application, wherein _ {呆 _ _ Group material consisting of gold, silver and platinum. 20. The device according to item 16 of the scope of patent application, in which the stomach light emitting device is incorporated into a digital still camera selected from a display device. National Standard (CNS) A4 Specification (2i × 297mm) ^ One--71-(Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 566054 A8 B8 C8 D8 VI. Patent Application 5 Brain 'mobile computer with image reproduction device for recording media, goggle-type display, imaging camera and group of portable phones installation. 21 · —A light-emitting device comprising: a TFT provided on an insulating surface, an inner-layer insulating film formed on the TFT, and a pixel electrode formed on the inner-layer insulating film, covering the pixel electrode. An insulating film at an edge portion, a cathode formed on the pixel electrode, a layer including an organic compound formed on the cathode, a protective layer formed on the layer including the organic compound, and the protection An anode formed on the layer, and wherein the TFT includes a source region and a drain region, and an opening formed by the pixel electrode in the inner insulating film is electrically connected to one of the source region or the drain region, The layer containing the organic composite includes a first layer composed of an organic composite and a second layer of an organic composite different from a substance constituting the first layer, and the light emitting device further includes a mixed layer, where the mixed layer is formed in the first layer. An organic compound constituting the first layer and an organic compound constituting the second layer are included between one layer and the second layer. 22. The device according to item 21 of the patent application, wherein the protective layer and the anode have a transmittance of 70-100%. 2 3. The device according to item 21 of the scope of the patent application, wherein the protective layer comprises a metal material belonging to 9 groups, 10 groups, or Π groups of the periodic table. This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) -72-566054 A8 B8 C8 D8 6. Scope of patent application 6 24. The device according to item 21 of the scope of patent application, wherein the protective layer comprises a material selected from the group consisting of gold, silver and platinum. 25. The device according to item 21 of the scope of patent application, wherein the light emitting device is selected from a display device, a digital still camera, a notebook personal computer, a mobile computer, an image reproduction device with a recording medium, and a goggle type display. , A device that mirrors groups of cameras and portable phones. 26. The device according to item 11 of the application, wherein the barrier film comprises a material selected from the group consisting of aluminum nitride, aluminum nitride oxide, nitrided aluminum oxide, silicon nitride, and silicon nitride oxide. 27. The device according to item 16 of the scope of patent application, wherein the barrier film comprises a material selected from the group consisting of aluminum nitride, aluminum nitride oxide, nitrided aluminum oxide, sand nitride, and silicon nitride oxide . (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size is applicable to China National Standard Liang (CNS) A4 (210X297 mm)