TW559979B - Substrate support and method of fabricating the same - Google Patents
Substrate support and method of fabricating the same Download PDFInfo
- Publication number
- TW559979B TW559979B TW091117388A TW91117388A TW559979B TW 559979 B TW559979 B TW 559979B TW 091117388 A TW091117388 A TW 091117388A TW 91117388 A TW91117388 A TW 91117388A TW 559979 B TW559979 B TW 559979B
- Authority
- TW
- Taiwan
- Prior art keywords
- subassembly
- substrate support
- reinforcing member
- scope
- mold
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
- B22D19/02—Casting in, on, or around objects which form part of the product for making reinforced articles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
Description
559979 六、申請專利範圍 10. 如申請專利範圍第1項所述之方法,其中該加工步驟 更包含: 用一鋁插塞來填入該鋁中因該柱栓之被移除的部 分所留下的空隙。 11. 如申請專利範圍第1項所述之方法,其中該第一補強 件是由金屬或陶瓷所製成。 12. 如申請專利範圍第1項所述之方法,其中該第一補強 件是由選自於氧化鋁板,氧化鋁纖維及氧化鋁顆粒結 合氧化矽纖維,氧化矽顆粒,碳化矽纖維或碳化矽顆 粒所構成的組成中之陶瓷材料所製成的。 13. —種製造一基材支樓器的方法,該方法至少包含: 組裝一次组件,其包括一被設置成穿過一加熱件之 柱栓,該加熱件被夾在一第一補強件與一第二補強件 之間; 將該次組件支撐在一模子的底部的上方; 用熔融的鋁包覆該被置入模子内的次組件用以形 成一鑄件; 藉由移除該柱栓的至少一部分來在該鑄件上形成 一孔;及 將一插塞置於該孔的至少一部分中。 第 221" 559979 六、申請專利範圍 14. 如申請專利範圍第13項所述之方法,其中該組裝次 組件的步驟更包含將一背板以至少相距40公釐的間 隔開來的方式编合至該次組件。 15. —種製造一基材支撐器的方法,該方法至少包含: 組裝一次組件,其包含一加熱件其被多個柱栓保持 在一第一補強件與一第二補強件之間; 將一背板以至少相距40公釐的間隔開來的方式耦 合至該次組件; 在一單次傾注中用熔融鋁來鑄造被支撐於一模子 中的該次組件; 施加壓力至該熔融鋁;及 將圍該被鑄造的次組件周圍的柱栓的至少一部分 去除掉。 16.如申請專利範圍第is項所述之方法,其更包含: 施加一至少40MPa的壓力至該熔融鋁的一區域其 至少位在該次组件的正上方s 17. 如申請專利範圍第15項所述之方法’其更包含將該 模子加熱至介於35〇t至40(Tc的温度。 18. 如申請專利範圍第15項所逑之方法,其更包含用— 銘插塞來填入該紹中因該权栓之被移除的部分所留 第23育 559979 t、申請專利範圍 下的空隙。 1 9.如申請專利範圍第1 5項所述之方法,其中該施加壓 力的步驟更包含用IS來灌注(impregnating)該第一補強件 及該第二補強件。 20. 如申請專利範圍第1 5項所述之方法,其更包含將該 基材支撐器陽極化。 21. —種基材支撐器,其至少包含: 一鑄造的IS本體,其具有一外表面; 一加熱件,其被埋設在該本體内; 一第一補強件,其被埋設在該本體内; 至少一孔其被形成在該外表面與該加熱件或該第 一補強件之間; 一插塞,其被設置在該孔中介於該外表面與該加熱 件或該第一補強件之間。 2 2.如申請專利範圍第21項所述之基材支撐器,其中該 鑄造的鋁本體是在鋁的一單一傾注操作中形成的。 23.如申請專利範圍第22項所述之基材支撐器,其中在 鑄造期間一柱栓將該加熱件及該補強件保持在一間 隔開來的關係且在該插塞插入之前可從該孔中被至 559979 t、申請專利範圍 少部分地去除掉。 24. 如申請專利範圍第21項所述之基材支撐器,其中該 插塞被焊接至該鋁本體。 25. 如申請專利範圍第21項所述之基材支撐器,其更包 含一第二補強件,其被埋設在該本體中且被夾在該加 熱件與該第一補強件之間。 26. —種由一處理所製造的基材支撐器,該處理至少包 含: 將一第一補強件及一加熱件放在一柱栓上用以形 成一次組件; 在一模子中用熔融鋁將該次組件包覆起來用以形 成一鑄件;及 藉由移除至少一部分的柱栓來加工(finishing)該鑄 件。 第25頁
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/921,104 US6510888B1 (en) | 2001-08-01 | 2001-08-01 | Substrate support and method of fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW559979B true TW559979B (en) | 2003-11-01 |
Family
ID=25444923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091117388A TW559979B (en) | 2001-08-01 | 2002-08-01 | Substrate support and method of fabricating the same |
Country Status (7)
Country | Link |
---|---|
US (2) | US6510888B1 (zh) |
EP (1) | EP1412968A2 (zh) |
JP (1) | JP2005524968A (zh) |
KR (1) | KR100589281B1 (zh) |
CN (1) | CN100470715C (zh) |
TW (1) | TW559979B (zh) |
WO (1) | WO2003012835A2 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7122979B2 (en) * | 2000-12-27 | 2006-10-17 | Transportation Techniques, Llc | Method and apparatus for selective operation of a hybrid electric vehicle in various driving modes |
US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
TWI412621B (zh) * | 2004-07-16 | 2013-10-21 | Applied Materials Inc | 具有遮蔽板的陰影框 |
US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
US8173228B2 (en) * | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
JP2010114280A (ja) * | 2008-11-07 | 2010-05-20 | Sukegawa Electric Co Ltd | 基板加熱プレートヒータ |
KR101147998B1 (ko) * | 2011-11-14 | 2012-05-24 | 주식회사 포톤 | 고효율 서셉터 및 이의 제조 방법 |
JP5857081B2 (ja) * | 2014-02-17 | 2016-02-10 | 助川電気工業株式会社 | 基板加熱プレートヒータの製造方法 |
CN104570419B (zh) * | 2014-12-26 | 2018-01-30 | 深圳市华星光电技术有限公司 | 吸附式载台及其吸附方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3885128A (en) * | 1974-07-01 | 1975-05-20 | Gen Electric | Glass-ceramic plate heating unit cast-in heat spreader |
JPS5996236A (ja) | 1982-11-26 | 1984-06-02 | Toyota Motor Corp | 複合材料の製造方法 |
US5293923A (en) | 1992-07-13 | 1994-03-15 | Alabi Muftau M | Process for metallurgically bonding aluminum-base inserts within an aluminum casting |
JPH0711446A (ja) | 1993-05-27 | 1995-01-13 | Applied Materials Inc | 気相成長用サセプタ装置 |
US5509459A (en) | 1994-09-28 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Pressure cast alumina tile reinforced aluminum alloy armor and process for producing the same |
US6086680A (en) | 1995-08-22 | 2000-07-11 | Asm America, Inc. | Low-mass susceptor |
US5584936A (en) | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
JPH09213781A (ja) | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
DE19711702C1 (de) | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
US6190113B1 (en) | 1997-04-30 | 2001-02-20 | Applied Materials, Inc. | Quartz pin lift for single wafer chemical vapor deposition/etch process chamber |
JPH11343571A (ja) * | 1998-05-29 | 1999-12-14 | Ngk Insulators Ltd | サセプター |
-
2001
- 2001-08-01 US US09/921,104 patent/US6510888B1/en not_active Expired - Lifetime
-
2002
- 2002-08-01 CN CNB028180607A patent/CN100470715C/zh not_active Expired - Lifetime
- 2002-08-01 WO PCT/US2002/024548 patent/WO2003012835A2/en not_active Application Discontinuation
- 2002-08-01 JP JP2003517919A patent/JP2005524968A/ja active Pending
- 2002-08-01 EP EP02756906A patent/EP1412968A2/en not_active Withdrawn
- 2002-08-01 KR KR1020047001655A patent/KR100589281B1/ko not_active IP Right Cessation
- 2002-08-01 TW TW091117388A patent/TW559979B/zh not_active IP Right Cessation
- 2002-12-02 US US10/308,300 patent/US20030079853A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6510888B1 (en) | 2003-01-28 |
EP1412968A2 (en) | 2004-04-28 |
WO2003012835A3 (en) | 2003-08-28 |
CN100470715C (zh) | 2009-03-18 |
KR20040030917A (ko) | 2004-04-09 |
JP2005524968A (ja) | 2005-08-18 |
US20030079853A1 (en) | 2003-05-01 |
US20030024680A1 (en) | 2003-02-06 |
WO2003012835A2 (en) | 2003-02-13 |
CN1555569A (zh) | 2004-12-15 |
KR100589281B1 (ko) | 2006-06-14 |
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