TW559927B - Substrate processing method and apparatus - Google Patents
Substrate processing method and apparatus Download PDFInfo
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- TW559927B TW559927B TW091111312A TW91111312A TW559927B TW 559927 B TW559927 B TW 559927B TW 091111312 A TW091111312 A TW 091111312A TW 91111312 A TW91111312 A TW 91111312A TW 559927 B TW559927 B TW 559927B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/18—Actuating devices; Operating means; Releasing devices actuated by fluid actuated by a float
- F16K31/20—Actuating devices; Operating means; Releasing devices actuated by fluid actuated by a float actuating a lift valve
- F16K31/22—Actuating devices; Operating means; Releasing devices actuated by fluid actuated by a float actuating a lift valve with the float rigidly connected to the valve
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/44—Mechanical actuating means
- F16K31/53—Mechanical actuating means with toothed gearing
- F16K31/54—Mechanical actuating means with toothed gearing with pinion and rack
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K33/00—Floats for actuation of valves or other apparatus
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- E—FIXED CONSTRUCTIONS
- E03—WATER SUPPLY; SEWERAGE
- E03D—WATER-CLOSETS OR URINALS WITH FLUSHING DEVICES; FLUSHING VALVES THEREFOR
- E03D1/00—Water flushing devices with cisterns ; Setting up a range of flushing devices or water-closets; Combinations of several flushing devices
- E03D1/30—Valves for high or low level cisterns; Their arrangement ; Flushing mechanisms in the cistern, optionally with provisions for a pre-or a post- flushing and for cutting off the flushing mechanism in case of leakage
- E03D1/33—Adaptations or arrangements of floats
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
559927 A7 B7 五、發明説明(, 技術領域 本發明係有關對半導體基板等基板施予洗淨、乾燥等處 理之葉片式基板處理方法及製置。 背景技術 吾人所知以往的葉片式基板處理製置如圖9所示(例如參 照特開平11-176787號公報)。 在圖9的基板處理製置中,基板裝著台2藉爪2a、2b的卡 合’維持被處理基板1於旋轉台(Spin base)3上,該旋轉台3 係藉中空迴轉軸3a所支持而能自由迴轉。基板裝著台2沿基 板1的外圓周設為封閉環狀,該封閉環上有連通封閉環内側 至外側的開孔2A、2B。 旋轉台3下方設有下蓋4。此外,設有覆蓋基板1、旋轉台 3、下蓋4等的上蓋5。上蓋5其下蓋4之間設有中隔6。該中 隔6的内圓周部與基板裝著台2的外圓周部相合構成迷宮 (labyrinth)構造6a。藉該迷宮構造6a,基板裝著台2在液體密 封狀態下可以做迴轉。排出路徑7形成於下蓋4與中隔6之 間;同樣地,排出路徑8亦形成於上蓋5與中隔6之間。上蓋 5具有供給管5a。 處理時,基板1藉迴轉軸3a做迴轉的且,由供給管5a將處 理液供給至基板1的上表面la,而由排出路徑8排出處理 液。此外,隔著迴轉軸3a的中空部將供給至基板1的下表面 lb的處理液由排出路徑7排出。以此方法,可以對基板1的 上表面la及下表面lb且做洗淨處理。此外,依照意願可以 對上表面la或下表面lb的單獨一方施予給定的處理(例如 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927 A7 -____B7 ___ 五、發明説明(2 ) 蝕刻處理)。 如上述,使用以往技術的構造係在被處理基板1的兩面 上’使處理液在其中央部到超過面邊的廣大範圍上流動, 因此會有處理液使用量變多的間題。再者,以往的技術設 置中隔6及迷宮構造6a使基板1產生迴轉,也會有導致裝置 大型化的問題。 本發明考慮上述情況,其目的在於提供可以減低處理液 或處理氣體使用量的新型基板洗淨方法。此外,本發明另 一目的為提供低處理液或處理氣體使用量的小型基板處理 裝置。 發明之揭示 本發明之基板處理方法及裝置係將被處理基板挾於一 組的維持板之間做推壓維持,使用處理液或處理氣體施予 給定的處理(即洗淨處理或乾燥處理),其特徵為使用〇形圓 等彈性構件限定被處理基板的處理範圍。 詳述之’即在與所插入配置的被處理基板上下相對應的 、隹持板上個別形成凹部,配置可以圍繞該凹部的封閉環狀 0型圈。意即’被處理基板兩側的主要面透過〇型圈,加壓 維持於上下的維持板之間,藉以畫定處理範圍。例如各凹 部形成為球狀,在其底部附近設置2個開孔。意即,由一邊 的開孔供給處理液或處理氣體至維持板的凹部之内,在維 争板的凹部内流通後’由另一邊的開孔予以排出。藉此, 以處理液或處理氣體對被處理基板的主要面施予處理。在 具體作法上,使用洗淨液或純水做為處理液對被處理基板 -5 - 本紙張尺度適用巾g g家標準(CNS) A4規格(21GX⑽7公爱) 559927559927 A7 B7 V. Description of the Invention (Technical Field) The present invention relates to a blade-type substrate processing method and system for subjecting substrates such as semiconductor substrates to cleaning, drying, and the like. BACKGROUND ART I know the conventional blade-type substrate processing systems. As shown in FIG. 9 (for example, refer to Japanese Patent Application Laid-Open No. 11-176787). In the substrate processing system shown in FIG. 9, the substrate mounting table 2 is held by the engagement of the claws 2a and 2b to maintain the substrate to be processed 1 on the rotary table. On the (Spin base) 3, the rotary table 3 can be freely rotated by the support of the hollow rotary shaft 3a. The substrate mounting table 2 is set into a closed ring along the outer circumference of the substrate 1, and the closed ring is connected to the inside of the closed ring Openings 2A, 2B to the outside. A lower cover 4 is provided below the rotary table 3. In addition, an upper cover 5 covering the substrate 1, the rotary table 3, the lower cover 4, etc. is provided. The upper cover 5 is provided with a middle between the lower covers 4. Interval 6. The inner peripheral portion of the septum 6 and the outer peripheral portion of the substrate mounting table 2 constitute a labyrinth structure 6a. With this labyrinth structure 6a, the substrate mounting table 2 can be rotated in a liquid-tight state. A discharge path 7 is formed between the lower cover 4 and the septum 6; similarly The discharge path 8 is also formed between the upper cover 5 and the septum 6. The upper cover 5 has a supply pipe 5a. During processing, the substrate 1 is rotated by the rotating shaft 3a, and the processing liquid is supplied to the substrate 1 by the supply pipe 5a. The processing liquid is discharged through the discharge path 8 on the surface la. In addition, the processing liquid supplied to the lower surface 1b of the substrate 1 is discharged through the discharge path 7 through the hollow portion of the rotary shaft 3a. In this way, the upper surface of the substrate 1 can be discharged. The surface la and the lower surface lb are cleaned. In addition, a given treatment can be given to either the upper surface la or the lower surface lb according to the wishes (for example, -4-This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 559927 A7 -____ B7 ___ V. Description of the invention (2) Etching process. As described above, the structure using the conventional technology is attached to both sides of the substrate 1 to be processed, so that the processing liquid reaches the center of the substrate. Flowing over a wide area beyond the surface side, there is a problem that the amount of processing liquid is increased. Furthermore, the conventional technology provided the partition 6 and the labyrinth structure 6a to rotate the substrate 1 and also caused a problem that the device is enlarged. The present invention considers The object of the above-mentioned circumstances is to provide a novel substrate cleaning method capable of reducing the amount of processing liquid or processing gas used. In addition, another object of the present invention is to provide a small-sized substrate processing apparatus having a low amount of processing liquid or processing gas used. The substrate processing method and device of the invention are characterized in that the substrate to be processed is pushed and maintained between a group of maintenance plates, and a given treatment (that is, a washing treatment or a drying treatment) is given using a processing liquid or a processing gas. The processing range of the substrate to be processed is defined by using an elastic member such as a O-shaped circle. In detail, that is, the recesses are individually formed on the holding plates corresponding to the upper and lower sides of the substrate to be inserted, and the configuration can be closed around the recesses. Ring 0-ring. This means that the main surfaces on both sides of the substrate to be processed pass through the o-rings and are maintained under pressure between the upper and lower holding plates to define the processing range. For example, each recess is formed in a spherical shape, and two openings are provided near the bottom thereof. In other words, the processing liquid or the processing gas is supplied from the openings on one side into the recessed portion of the holding plate, and then circulated through the recessed portion of the competition plate, and then discharged through the openings on the other side. Thereby, the main surface of the substrate to be processed is processed with a processing liquid or a processing gas. In specific methods, use a cleaning solution or pure water as the processing solution for the substrate to be processed. -5-This paper size is suitable for towel g g standard (CNS) A4 specification (21GX⑽7 public love) 559927
或以&等惰性氣體做為處理氣體 的主要面施予洗淨處理 施予乾燥處理。 在上述情況下,可以對被處理基板單邊的面做單獨處 理,或對兩面做且處理。此外,處理範圍不須限定於被處 理基板的主要面,也可將其面邊等做為處理對象。即,設 置覆蓋維持板(對處理基板做加壓維持)所形成的重疊體的 覆蓋構件’其卡合部透過封閉環狀的。形圈,對維持板的 面邊做推| If此’沿對處理基板的面邊形成封閉環狀的 流路’藉該流路内處理液或處理氣體的流通,對被處理基 板的面邊及其邊傍部分施予處理。 於上述中,亦可在被處理基板單邊的主要面及與其呈相 對配置的維持板之間設置複數個分隔物(spacer)以取代〇形 圈。在此情況下,可以對被處理基板的面邊及分隔物方面 的主要面且施予處理。 以被處理基板的處理液或處理氣體的供給排出方法而 言,並非單單祇透過設於各維持板凹部上的開孔做供給排 出’已可以採取各種的方法。例如,設置連通維持板凹部 上底部的開孔,以2種的流管貫穿小孔。亦即,亦可通過一 邊的流管供給處理液或處理氣體至配置於凹部内的噴嘴 (nozzle) ’由喷嘴的噴出口對被處理基板的主要面供給嘴出 處理液或處理氣體,之後,透過另一邊的流管排出至外部。 再者’也可以使維持板等適宜地運作以提高處理效率及 處理上的均一性。此外,本發明也可以輕易地應用在使用 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公复) 559927 A7Or, an inert gas such as & is used as the main surface of the processing gas, and the cleaning process is applied to the drying process. In the above case, one side of the substrate to be processed can be processed separately, or both sides can be processed. In addition, the processing range does not need to be limited to the main surface of the substrate to be processed, and its surface and edges can also be used as processing objects. That is, a covering member 'provided with an overlapping body formed by covering a holding plate (pressurizing and maintaining a processing substrate) is provided with a closed loop-shaped engaging portion. Ring to push the face and edge of the holding plate | If this 'forms a closed loop flow path along the face and edge of the processing substrate', the processing liquid or processing gas in the flow channel is circulated to the face and edge of the substrate to be processed And its surrounding parts. In the above, a plurality of spacers may be provided between the main surface of one side of the substrate to be processed and the maintenance plate disposed opposite to the main surface, instead of the O-rings. In this case, the main surface of the surface of the substrate to be processed and the separator may be processed. With regard to the method of supplying and discharging the processing liquid or the processing gas of the substrate to be processed, various methods have been adopted other than simply supplying and discharging through the openings provided in the recesses of the respective holding plates. For example, an opening is provided at the bottom of the recessed portion of the communication maintaining plate, and the small hole is penetrated by two kinds of flow tubes. That is, the processing liquid or the processing gas may be supplied to the nozzle (nozzle) arranged in the recess through one side flow tube. The processing liquid or the processing gas may be supplied to the main surface of the substrate to be processed from the nozzle discharge port. Discharge to the outside through the other side of the flow tube. Furthermore, it is also possible to appropriately operate the maintenance plate or the like to improve processing efficiency and uniformity in processing. In addition, the present invention can also be easily applied to the use of -6-This paper size applies to China National Standard (CNS) A4 specification (210X 297 public reply) 559927 A7
微波放電的電漿蝕刻(plasma etching)裝置上。 如以上所述,本發明在對半導體基板等施予基板洗淨、 乾燥處理上預先限定處理範圍,因此可以降低處理液或處 理氣體的使用量。 圖示之簡要說明 圖1所示係有關本發明第丨實施例中,在葉片式基板處理 裝置内被處理基板的取送樣態的斜視圖。 圖2所示係在上述基板處理裝置的維持板之間,對被處 理基板做推壓維持施予洗淨處理樣態的圖1中沿X — χ,線 的剖面圖。 圖3所示係有關第1實施例中,基板處理裝置的第1變化衍 生例的剖面圖。 圖4所示係有關第1實施例中,基板處理裝置的第2變化衍 生例的剖面圖。 圖5示係有關本發明第2實施例中,在葉片式基板處理裝 置内對被處理基板施予洗淨處理樣態的剖面圖。 圖6示係有關本發明第3實施例中,在葉片式基板處理裝 置内對被處理基板施予洗淨處理樣態的剖面圖。 圖7示係有關本發明第4實施例中,在葉片式基板處理裝 置内對被處理基板施予洗淨處理樣態的剖面圖。 圖8所示係有關本發明第4實施例變化衍生例,在葉片式 基板處理裝置内對被處理基板施予洗淨處理樣態的重要部 剖面圖。 圖9所示係以往葉片式基板處理裝置的重要部構造為例 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927Microwave discharge on a plasma etching device. As described above, the present invention limits the processing range in advance to substrate cleaning and drying processes for semiconductor substrates and the like, so that the amount of processing liquid or processing gas used can be reduced. Brief Description of the Drawings Fig. 1 is a perspective view of a sample receiving and feeding state of a substrate to be processed in a blade-type substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view taken along the line X-χ in Fig. 1 between the holding plates of the substrate processing apparatus and pressing the processed substrate to maintain and give a cleaning treatment. Fig. 3 is a cross-sectional view showing a first modified example of the substrate processing apparatus in the first embodiment. Fig. 4 is a cross-sectional view showing a second modification example of the substrate processing apparatus in the first embodiment. Fig. 5 is a sectional view showing a state in which a substrate to be processed is subjected to a cleaning treatment in a blade-type substrate processing apparatus according to a second embodiment of the present invention. Fig. 6 is a sectional view showing a state in which a substrate to be processed is subjected to a cleaning treatment in a blade-type substrate processing apparatus according to a third embodiment of the present invention. Fig. 7 is a cross-sectional view showing a state in which a substrate to be processed is subjected to a cleaning process in a blade-type substrate processing apparatus according to a fourth embodiment of the present invention. Fig. 8 is a cross-sectional view of an important part of a modified embodiment of the fourth embodiment of the present invention, in which a substrate to be processed is subjected to a cleaning treatment in a blade-type substrate processing apparatus. Figure 9 shows an example of the structure of an important part of a conventional blade-type substrate processing apparatus. The paper size is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 559927
五、發明説明(5 ) 的剖面圖。 圖ίο所示係有關本發明第5實施例中 置的應用例。 ’應用於電漿蝕刻裝 ’葉片式基板處理裝 圖11所示係有關本發明第6實施例中 置重要部的斜視圖。 本發明的最佳實施形態 第1實施例 圖1所示係有關本發明第i實施例的葉片式基板處理裝 置,在該裝置的處理空間内,半導體基板(晶圓)等被處理 基板10藉由搬運裝置的機械臂12a,12b在維持的狀態下, 由箭頭A方向取送。 以設於基板處理裝置下部的維持板14為例,該維持板14 為四邊形,尺寸僅略大於被處理基板1〇。在維持板14的主 表面中央部上形成球面狀凹部16,以流通、循環處理液或 處理氣體。設圍繞該凹部16周圍的Ο形圈1 §。〇形圈1 §係由 橡皮或塑膠等彈性構件所構成,被處理基板丨〇載放於該〇 形圈18之上。沿圖IX· X’的剖面圖示於圖2。 維持板14上設連通凹部16内側至外部(維持板14之裏側) 的開孔16a、16b,該開孔16a、16b個別連接流管20、22。在 維持板14的兩側面挾住凹部16的個別相對位置上形成缺口 14a、14b。該缺口 14a、14b與機械臂12a、12b的前端部個 別相楔合。 維持板14的面邊14s的邊傍設置有支撐軸28C,該支撐軸 28C藉設於支撐台28上的軸承28A、28B予以支撐而運轉自 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 5599275. Sectional view of invention description (5). The figure shows an example of application in the fifth embodiment of the present invention. 'Application to Plasma Etching Apparatus' Blade Type Substrate Processing Apparatus FIG. 11 is a perspective view of an important part of a sixth embodiment of the present invention. Best Mode for Carrying Out the Invention First Embodiment FIG. 1 shows a blade-type substrate processing apparatus according to an i-th embodiment of the present invention. In the processing space of the apparatus, semiconductor substrates (wafers) and other processed substrates 10 are borrowed. The robot arms 12a, 12b of the conveying device are taken in the direction of arrow A while being maintained. Taking the holding plate 14 provided at the lower portion of the substrate processing apparatus as an example, the holding plate 14 is quadrangular and has a size slightly larger than the substrate 10 to be processed. A spherical recess 16 is formed in the central portion of the main surface of the holding plate 14 to circulate and circulate the processing liquid or the processing gas. It is assumed that an O-ring 1 around the recess 16 is §. The O-ring 1 § is composed of an elastic member such as rubber or plastic, and the substrate to be processed is placed on the O-ring 18. A sectional view taken along the line IX · X 'is shown in FIG. 2. The holding plate 14 is provided with openings 16 a and 16 b that communicate from the inside of the recessed portion 16 to the outside (inside of the holding plate 14). The openings 16 a and 16 b are connected to the flow tubes 20 and 22 respectively. Notches 14a and 14b are formed at the respective relative positions where the recesses 16 are held on both sides of the holding plate 14. The cutouts 14a and 14b are respectively wedged with the front ends of the robot arms 12a and 12b. A support shaft 28C is provided near the side 14s of the maintenance plate 14. The support shaft 28C is supported by bearings 28A and 28B provided on the support table 28 and operates from this paper scale to the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) 559927
如此外,在維持板14的面邊143的6邊傍,略沿支持軸28c 隔著給定的間直立設置2根導引構件24、26。 方的維持板30與下方的維持板14同樣為四邊形,且與維持 板14約莫為同一尺寸。上述維持板14、3〇兩者均可以金屬 或塑膠等加工形成,形狀亦可做為圓形或橢圓形等以外的 任一形狀。 一万面在基板處理裝置的上方所設的維持板儿上具有 與導引構件24、26的前端部個別相楔合的2個開孔。即唯持 板3〇由導引構件24、26所引導,可以在上下方向移動上 維持板30的主表面與維持板14呈相對往向下方移動,其 中央部上形成用以流通、循環處理液或處理氣體的球面狀 凹部32。即維持板30的凹部32與維持板14的凹部16為對應 設置。設Ο形圈34以圍繞該凹述部32的周圍。〇形圈34與前 述0形圈18同樣由彈性構件所構成。以適用於該〇形圈18、 34的材質為例,可例舉的有氟化橡膠等含氟材料。 維持板30上設連通凹部32内側至外部(維持板3〇的内面) 的開孔32a、32b ·該開孔32a、32b個別連接流管36、38。 在維持板30的兩側面挾住凹部32的個別相對位置上形成缺 口 30a、3 0b。該維持板30之缺口 30a、3 0b與前述維持板14 之缺口 14a、14b為個別相互對應。亦即維持板3〇下降與維 持板14相重合時,前述機械臂丨2a、i2b的前端部可以個別 插入楔合至相互對應的缺口 30a、14a和缺口 30b、14b所形 成的空間之中。在維持板30的内面設有缺口 3〇a的側面邊傍 設置驅動臂30A,藉該驅動臂30A使維持板30依箭頭b所示 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927 A7 B7 五、發明説明(7 ) 的上下方向做驅動。 處理時,被處理基板1 0載於於維持板14的〇形圈1 8上之 後’藉驅動臂30A使維持板30沿導構件24、26的引導下降, 透過Ο形圈34,重疊於被處理基板1〇上。之後,被處理基 板10挾於維持板14、30之間做推壓維持。基板10形成為略 圓板形狀,具有與維持板14、30個別接觸的第1面、第2面 10a、l〇b。即如圖2所示,基板1〇挾在維持板14、30之間的 狀態下’藉由維持板14上的0形圈18所圍繞在其第1面i〇a 上畫定第1處理範圍。且,藉由維持板3〇上的〇形圈34所圍 繞在第2面l〇b上畫定第2處理範圍。之後,透過維持板 上的流管20及開孔16a,供給處理液或處理氣體至凹部! 6 之内,在凹部16之内循環後,透過開孔16b及流管22予以排 出。藉此,可以對基板10的第1處理範圍施予處理。此外,. 透過維持板30上的流管36及開孔32a,供給處理液或處理氣 體至凹部32之内,在凹部32之内循環後,透過開孔32b及流 管38予以排出。藉此,可以對基板1〇的第2處理範圍施予處 理〇 於上述處理中,使用洗淨液或純水等做為處理液時,可 以對基板10施予洗淨處理。再者,使用%等惰性氣體做為 處理氣體時,可以對基板10施予乾燥處理。或者,也可以 在洗淨處理之後切換為乾燥處理。使用處理液的情況下, 亦可使排出面(即流管2 2、3 8方面)連接真空幫浦。而使用 處理氣體的情況下,亦可由供給面(即流管2〇、36方面)供 給壓氣體。依需要對被處理基板1 〇的第1以及第2處理範圍 -10 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927 A7 _____ B7 五、發明說明(8 ) 使用不同的處理液或處理氣體,施予一方使用處理液而另 一方使用處理氣體的另類處理亦可。 如圖1及圖2所示有關第1實施例的基板處理處理裝置之 中’被處理基板10的第1以及第2處理範圍藉〇形圈18及34 做個別限定,因此可以減少處理液或處理氣體的使用量。 再者’維持板14、3 0的尺寸比被處理基板1 〇多少大一些的 程度即可,因而不復設置被處理基板10的運轉機制,可以 實現基板處理裝置整體的小型化。 再者’被處理基板10的第1以及第2處理範圍若能同時實 施處理’可以提昇整體性的處理效率。與被處理基板10相 接觸的維持板14、3〇上的凹部16、32均採用球面狀的内部 形狀,因此處理液或處理氣體得以順暢流通,可以提高處 理上的均一性。 另外,在導引構件24的前端設驅動臂24A ,藉此可以控 制維持板14、3 0以及基板10等所形成的重疊體的運轉角 度。即藉由驅動臂24A往箭頭C方向作動,以支撐轴28C為 支點的「杠桿原理」,可以對上述重疊體的運轉角度做任意 控制。例如,可以在前述處理開始前事先設定可以使處理 液暢的重疊體運轉角度。在處理之中,也可以使重叠體的 運轉角度產生週期性或非週期性變化。如此藉重疊體運轉 角度的細微調整,可以更進一步提昇處理上的均一性和處 理效率。 有關第1實施例中的基板處理裝置,可以構成各種的變 化衍生例◎圖3所示為該基板處理裝置的第1變化衍生例, -11- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 559927As described above, two guide members 24 and 26 are provided upright along the support shaft 28c at a predetermined interval between the six sides of the surface side 143 of the holding plate 14. The square holding plate 30 is similar to the holding plate 14 below, and is approximately the same size as the holding plate 14. Both the holding plates 14 and 30 can be formed by processing metal or plastic, and the shape can be any shape other than circular or oval. The ten thousand face has two openings which are individually engaged with the front end portions of the guide members 24 and 26 on a holding plate provided above the substrate processing apparatus. That is, only the holding plate 30 is guided by the guide members 24 and 26, and the main surface of the holding plate 30 and the holding plate 14 can be moved downward in a vertical direction. A central portion of the holding plate 30 is formed for circulation and circulation processing. Liquid or processing gas spherical recess 32. That is, the concave portion 32 of the holding plate 30 and the concave portion 16 of the holding plate 14 are provided correspondingly. An O-ring 34 is provided to surround the periphery of the concave portion 32. The o-ring 34 is formed of an elastic member similarly to the aforementioned o-ring 18. Taking a material suitable for the O-rings 18 and 34 as an example, a fluorine-containing material such as fluorinated rubber may be exemplified. The holding plate 30 is provided with openings 32 a and 32 b that communicate from the inside of the recessed portion 32 to the outside (the inner surface of the holding plate 30). The openings 32 a and 32 b are respectively connected to the flow pipes 36 and 38. The cutouts 30a, 30b are formed at the respective relative positions where the recesses 32 are held on both sides of the holding plate 30. The cutouts 30a and 30b of the holding plate 30 and the cutouts 14a and 14b of the holding plate 14 correspond to each other. That is, when the holding plate 30 falls and coincides with the holding plate 14, the front ends of the aforementioned robot arms 2a, i2b can be individually inserted into the spaces formed by the corresponding cutouts 30a, 14a and 30b, 14b. A driving arm 30A is provided on the side of the maintenance plate 30 with a cutout 30a on the inner surface, and the driving arm 30A is used to make the maintenance plate 30 as shown by the arrow b. -9-This paper size applies the Chinese National Standard (CNS) A4 specification. (210 X 297 mm) 559927 A7 B7 V. Description of the invention (7) Drive in the up and down direction. During processing, after the substrate 10 to be processed is placed on the O-ring 18 of the holding plate 14, the holding plate 30 is lowered along the guide members 24 and 26 by the driving arm 30A, and passes through the O-ring 34 to overlap the substrate. The substrate 10 is processed. After that, the substrate 10 to be processed is held between the holding plates 14 and 30 for maintenance. The substrate 10 is formed in a substantially circular plate shape, and has first and second surfaces 10a, 10b that are in contact with the holding plates 14, 30, respectively. That is, as shown in FIG. 2, the substrate 10 is in a state between the holding plates 14 and 30, and the first treatment is drawn on the first surface i 0a by the 0-ring 18 on the holding plate 14. range. In addition, the second processing range is drawn on the second surface 10b by the o-ring 34 on the holding plate 30. After that, through the flow tube 20 and the opening 16a on the holding plate, the processing liquid or processing gas is supplied to the recessed portion! Within 6, after circulating inside the recessed portion 16, it is discharged through the opening 16b and the flow tube 22. Thereby, processing can be performed on the first processing range of the substrate 10. In addition, through the flow tube 36 and the opening 32a on the holding plate 30, the processing liquid or the processing gas is supplied into the recessed portion 32, and after circulating in the recessed portion 32, it is discharged through the opening 32b and the flow tube 38. Thereby, the second processing range of the substrate 10 can be processed. In the above processing, when a cleaning liquid or pure water is used as the processing liquid, the substrate 10 can be cleaned. When an inert gas such as% is used as the processing gas, the substrate 10 may be dried. Alternatively, it may be switched to a drying process after the washing process. In the case of using a treatment liquid, the discharge surface (that is, the flow tubes 2 2, 3, 8) can also be connected to a vacuum pump. When using a process gas, pressurized gas can also be supplied from the supply side (ie, the flow tubes 20 and 36). The 1st and 2nd processing range of the substrate 10 to be processed as required -10-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 559927 A7 _____ B7 V. Description of the invention (8) Use Different processing liquids or processing gases may be applied to alternative processing in which one side uses the processing liquid and the other side uses the processing gas. As shown in FIGS. 1 and 2, in the substrate processing apparatus according to the first embodiment, the first and second processing ranges of the substrate 10 to be processed are individually limited by the o-rings 18 and 34, so that the processing liquid or the The amount of process gas used. Furthermore, the size of the maintenance plates 14 and 30 may be somewhat larger than that of the substrate 10 to be processed. Therefore, the operation mechanism of the substrate 10 to be processed is not provided, and the entire substrate processing apparatus can be miniaturized. Furthermore, if the first and second processing ranges of the substrate 10 to be processed can be processed at the same time, the overall processing efficiency can be improved. The concave portions 16, 32 on the holding plates 14, 30 which are in contact with the substrate 10 to be processed have a spherical internal shape, so that the processing liquid or the processing gas can flow smoothly and the uniformity of processing can be improved. In addition, a driving arm 24A is provided at the front end of the guide member 24, whereby the operation angle of the superimposed body formed by the holding plates 14, 30, and the substrate 10 can be controlled. That is, by the "lever principle" in which the driving arm 24A moves in the direction of the arrow C and the supporting shaft 28C is used as a fulcrum, the operating angle of the above-mentioned superimposed body can be arbitrarily controlled. For example, the operation angle of the superimposed body that allows the processing liquid to flow can be set in advance before the aforementioned processing is started. During the process, the operating angle of the overlap can also be changed periodically or aperiodically. In this way, the fine adjustment of the operating angle of the overlap can further improve the uniformity and efficiency of processing. Regarding the substrate processing apparatus in the first embodiment, various variations and derivation examples can be formed. Figure 3 shows the first variation and derivation of the substrate processing apparatus. (210X 297 mm) 559927
與圖1及圖2所示為同一構成要素,則附上同一符號,省略 其詳細說明。 圖3所示之第!變化衍生例的特徵為變更維持板14、3〇的 開孔及流管的配置。即維持板14上凹部16的底部設開孔i6c 與流S 42相連接’開孔i6a、由側面方向與流管⑽a、4〇b 個別相連接。此外,對於維持板3〇,於凹部32之底部設置 孔32c而與流管46連接,孔32a, 32b自側面分別與流管44a、 44b連接。首先’由維持板14兩側的流管40a、40b供給處理 液或處理氣體至凹部16之内,在凹部16之内循環後,透過 開孔32c及泥管46排出至外部。藉由上述的組成,因此處理 液或處理氣體得以順暢流通,可以提昇處理上的均一性和 處理效率。 於圖3所示之第1變化衍生例中,使處理液或處理氣體的 流通路徑成為反向亦可。亦即,透過流管42及開孔丨6c,使 處理液或處理氣體流入凹部16之内,透過開孔i6a、16b及 流管40a、40b排出至外部亦可。同樣地,亦可透過流管46 及孔32c使處理液或處理氣體流入凹部32内,而透過32a、 32b及流管44a、44b排出至外部。開孔16a、16b不必限定為 2個,沿凹部16的内圓周面做分散多數配置亦可。同樣地, 開孔32a、32b也不必限定為2個,沿凹部32的内圓周面做分 散多數配置亦可。 圖4所示為上述基板處理裝置的第2變化衍生例,與圖1 及圖3所示為同一構成要素,則附上同一符號,省略其詳細 說明。 -12 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927The same components as those shown in Figs. 1 and 2 are assigned the same reference numerals, and detailed descriptions thereof are omitted. No. shown in Figure 3! The variation example is characterized by changing the arrangement of the openings of the maintenance plates 14, 30 and the flow tubes. That is, an opening i6c is provided at the bottom of the recessed portion 16 on the holding plate 14 to be connected to the flow S42 ', and the opening i6a is individually connected to the flow tubes ⑽a and 40b from the side direction. In addition, for the holding plate 30, a hole 32c is provided at the bottom of the recess 32 to be connected to the flow tube 46, and the holes 32a and 32b are respectively connected to the flow tubes 44a and 44b from the side. First, the process liquid or process gas is supplied into the recessed portion 16 from the flow tubes 40a and 40b on both sides of the holding plate 14, and after circulating in the recessed portion 16, it is discharged to the outside through the opening 32c and the mud pipe 46. With the above-mentioned composition, the processing liquid or the processing gas can flow smoothly, and the uniformity in processing and the processing efficiency can be improved. In the first modification example shown in Fig. 3, the flow path of the processing liquid or the processing gas may be reversed. That is, the processing liquid or the processing gas may flow into the recessed portion 16 through the flow tube 42 and the openings 6c, and may be discharged to the outside through the openings i6a, 16b and the flow tubes 40a, 40b. Similarly, the processing liquid or the processing gas can be made to flow into the recessed portion 32 through the flow tube 46 and the hole 32c, and can be discharged to the outside through the 32a and 32b and the flow tubes 44a and 44b. The openings 16a and 16b are not necessarily limited to two, and a plurality of openings 16a and 16b may be arranged along the inner circumferential surface of the recessed portion 16. Similarly, the openings 32a and 32b need not be limited to two, and a plurality of openings 32a and 32b may be arranged along the inner circumferential surface of the recess 32. Fig. 4 shows a second variation of the above-mentioned substrate processing apparatus. The same constituent elements as those shown in Figs. 1 and 3 are denoted by the same reference numerals, and detailed descriptions thereof are omitted. -12-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 559927
圖4所π之第2變化衍生例的待徵為維持板14、3〇的凹二 16、32的内部形狀不做成球面,而做成稍微平坦的圓形部 在功能上與前述並非相差很大,與做成球面相比,具有系、 持板的加工可以簡化的效果。 八維 第2實施例 圖5所示為有關本發明第2實施例的葉片式基板處埋 置,採用部分圖1所示的前述第丨實施例中相同的組成物, 因此與圖1所示為同一的構成要素則附上相同的符號。 於第2實施例中,處理下的被處理基板1〇以〇形圈ΐ8、μ 為介,挾於維持板14、30之間做推壓維持。與前述第丨實施 例不同的是,上方的維持板3〇上不設與基板1〇裝面呈相= 的凹部。再者,下方的維持板14的凹部16之内配置可動噴 嘴50的皿狀構件50a。該皿狀構件5〇a藉具有多數噴出口的 圓板50b予以覆蓋。亦即,使圓板5〇b的噴出口朝向凹部μ 的開口部,將可動噴嘴5〇配置於維持板14的凹部Η之内。 維持板14的凹部16底勘上設有開孔16e,外徑小於開孔 16c内徑的流管52透過開孔16c,連接凹部16内的可動噴嘴 5〇。此外,流管54的一端連接開孔16c,由開孔16c向下方 延伸,彎曲成L形。流管52由該流管54的中間向下方延伸, 透過封閉構件56,自其L形彎曲部向外側導出,再向下方 延伸。亦即,流管52藉由封閉構件56成為液密閉狀態,可 以運轉自如且上下自如地安裝於流管54上。 維持板14及流管54下方設支撐台60 ^延伸至封閉構件% 下方的流管52上設凸緣(flange)58,該凸緣58藉支撐台6〇的 -13 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927The second variation example of π shown in FIG. 4 is that the internal shapes of the recesses 16 and 32 of the holding plates 14 and 30 are not made into a spherical surface, but a slightly flat circular portion is not functionally different from the foregoing. Very large, compared with making a spherical surface, it has the effect that the processing of the tie and holding plate can be simplified. Eighth-dimensional second embodiment FIG. 5 shows the blade-type substrate embedded in the second embodiment of the present invention, and the same composition as in the aforementioned first embodiment shown in FIG. 1 is used, so it is the same as that shown in FIG. 1 The same components are assigned the same symbols. In the second embodiment, the substrate 10 to be processed under the condition of the o-rings ΐ8 and μ is held between the holding plates 14 and 30 for maintenance. Different from the aforementioned first embodiment, the upper holding plate 30 is not provided with a recessed portion corresponding to the mounting surface of the substrate 10. Further, a dish-like member 50a of the movable nozzle 50 is arranged inside the recessed portion 16 of the lower holding plate 14. The dish-like member 50a is covered by a circular plate 50b having a plurality of ejection ports. That is, the ejection port of the circular plate 50b is directed toward the opening of the recessed portion μ, and the movable nozzle 50 is arranged in the recessed portion Η of the holding plate 14. An opening 16e is provided on the bottom of the recess 16 of the maintaining plate 14, and a flow tube 52 having an outer diameter smaller than the inner diameter of the opening 16c passes through the opening 16c and connects to the movable nozzle 50 in the recess 16. In addition, one end of the flow tube 54 is connected to the opening 16c, extends downward from the opening 16c, and is bent into an L shape. The flow tube 52 extends downward from the middle of the flow tube 54, passes through the closing member 56, is led out from its L-shaped bent portion, and then extends downward. That is, the flow tube 52 is brought into a liquid-tight state by the closing member 56, and can be mounted on the flow tube 54 freely and vertically. A support table 60 is provided below the maintaining plate 14 and the flow tube 54. A flange 58 is provided on the flow tube 52 below the%. The flange 58 borrows the support table 60 to -13.-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 559927
軸承62支撐而運轉自如。剖面略呈门字形的支撐台6〇上設 馬達(M) 64,其迴轉係透過動力傳達機制%,傳達至流管 52。即流管52藉馬達64驅動往箭頭p方向迴轉。 配置於支撐面70上的上下驅動裝置68之上載放有支撐台 60。即支撐台60透過上下驅動裝置68的驅動桿6心、6此, 如箭頭P所示往上下方向受驅動。伴隨支撐台6〇的上下驅 動,流管52亦受上下方向驅動。因此,維持板14的凹部16 内的可動喷嘴50與流管52且迴轉,且產生上下作動。此外, 可動噴嘴50即使上下作動,在使可動噴嘴5〇的下面與凹部 16的底面之間具多少一些的間隙下,流管52支撐著可動噴 嘴 50。 、 流管52以支撐面70上的開孔70a為介向下方延伸,其下端 部浸於充填處理液74的容器72之内。將前述流管54的一端 連接於未圖示的幫浦,將維持板14的凹部16内減壓時,容 器72之内的處理液74則會在流管52内上昇抵達可動嘴嘴 5〇,由其覆蓋皿狀部50a的圓板50b上的多數噴出口噴出, 供給處理液74至被處理基板1〇的處理範圍(即〇形圈18所圍 繞的表面部分)。之後,處理液透過可動噴嘴50與凹部16的 底面之間的間隙以及開孔16c,自流管54向外部排出。其結 果為,對被處理基板10的處理範圍以處理液施予處理(例如 洗淨處理)。 如圖5所示之有關第2實施例中的基板處理裝置,與圖i 所示之前述第1實施例同樣均可降低處理液的使用量。再 者,由於處理液係由可動噴嘴50的圓板50b上的多數喷出口 -14 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927The bearing 62 is supported for free operation. A motor (M) 64 is provided on the support platform 60 having a slightly gate-shaped cross section, and its rotation is transmitted to the flow pipe 52 through the power transmission mechanism%. That is, the flow tube 52 is driven to rotate in the direction of arrow p by the motor 64. A support table 60 is placed on the up-and-down driving device 68 disposed on the support surface 70. That is, the support table 60 is driven in the up-down direction as shown by an arrow P through the driving rods 6 and 6 of the up-and-down driving device 68. As the support table 60 is driven up and down, the flow tube 52 is also driven in the up and down direction. Therefore, the movable nozzle 50 and the flow tube 52 in the recessed portion 16 of the holding plate 14 rotate and rotate up and down. In addition, even if the movable nozzle 50 is moved up and down, the flow tube 52 supports the movable nozzle 50 with a slight gap between the lower surface of the movable nozzle 50 and the bottom surface of the recess 16. The flow tube 52 extends downward through the opening 70a on the support surface 70, and its lower end is immersed in the container 72 filled with the processing liquid 74. When one end of the flow tube 54 is connected to a pump (not shown), and the pressure in the recess 16 of the holding plate 14 is reduced, the processing liquid 74 in the container 72 rises in the flow tube 52 and reaches the movable nozzle 5. It is ejected from a plurality of ejection ports on the circular plate 50b covering the dish-like portion 50a, and the processing liquid 74 is supplied to the processing range of the substrate 10 to be processed (that is, the surface portion surrounded by the o-ring 18). Thereafter, the treatment liquid passes through the gap between the movable nozzle 50 and the bottom surface of the recessed portion 16 and the opening 16c, and is discharged from the flow tube 54 to the outside. As a result, a processing liquid (for example, a cleaning process) is applied to the processing range of the substrate 10 to be processed. The substrate processing apparatus in the second embodiment as shown in FIG. 5 can reduce the use amount of the processing liquid similarly to the first embodiment shown in FIG. I. In addition, since the processing liquid is mostly ejected from the circular plate 50b of the movable nozzle 50-14-this paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 559927
供給處理液或處理氣體至被處理基板lG的處理㈣,因此 可以提昇處理效率。此外’維持板14、30的尺寸僅略大於 被處理基板1〇,與前述第1實施例才目同,不須設有與被處理 基板10相關的運轉機制。在第2實施例中,再將處理液透過 設於維持板14的凹部16底面的開孔16e,進行供给與排出, 因此得以實現基板處理裝置整體的小型化。在處理上若能 使可動喷嘴50適宜地迴轉和上下作動,處理效率以及處理 上的均-性會有進—步的提昇。在上述第2實施例中已記 述以處理液對被處理基板1G的處理,也可以用處理氣體取 代處理液對被處理基板1〇進行乾燥處理。 第3實施例 圖6所示為有關本發明第3實施例的葉片式基板處理裝 置採用部刀圖1及圖5所示的各實施例中相同的組成物, 因此與各實施例同一的部分則附上相同的符號。即圖6所示 有關第3實施例的基板處理裝置中’被處理基板職維持板 14下方的部分採用圖5所示與前述第2實施例同樣的組成 物’因此省略其詳細說明H被處理基板1()及維持板 14上方的部分係應用第2實施例的組成物。 與心ϋ貫%例相同,同樣地在第3實施例中被處理基板 10在處理時透過0形圈18、34,挾於維持板14、3〇之間做推 壓維持。此外,與前述第丨實施例同樣,維持板14、3〇兩者 個別形成凹部16、32,可以對被處理基板1〇的兩面做處理。 即被處理基板10的下側面藉維持板14的凹部16及〇形圈U 畫定處理範圍,其上側面藉維持板30的凹部32及0形圈34 -15 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇X 297公爱) 559927 A7 B7 五、發明説明(13 畫定處理範圍。 與第2實施例相同,維持板14的凹部16之内,設置具有多 j貪~出口的圓板50b,覆蓋可動嘴嘴5〇的皿狀構件5〇a。在 第3實施例中,維持板3〇的凹部32之内,亦設置具有多數噴 出口的圓板150b,覆蓋可動噴嘴15〇的皿狀構件15〇a。此 外,圓板150b的噴出口朝向凹部32的開口部。 流f 152自維持板30向上方延伸,其外徑小於設在維持板 30凹部32底部的開孔32c的内徑,透過開孔32c連接可動喷 嘴150。流管154亦連接開孔32e,由開孔32c向上方延伸彎 曲成L形,流管152由該流管154的中間向上方延伸,透過封 閉構件56,自其L形彎曲部導出,再向更上方延伸。流管152 藉由封閉構件156成為液密閉狀態,可以運轉自如且上下自 如地安裝於流管154上。 在更上方處,設有具備馬達(M) 164的支撐台160,流管 152上具備的凸緣158藉支撐台160的轴承162支撐可運轉自 如。馬達164的迴轉透過動力傳達機制166,傳達至流管 152。即流管152藉馬達164驅動向箭頭P方向迴轉。 支撐台160與配置於支撐面170上的上下驅動裝置168相 連接,透過其上下驅動裝置168的驅動桿168a、168b ,如箭 頭Q ’所示往上下方向受驅動。伴隨該支撐台160的上下驅 動’流管152亦受上下方向驅動。從而維持板3〇的凹部32 内的可動喷嘴150與流管152且迴轉並上下作動。此外,可 動噴嘴150不限於上下作動,在使可動噴嘴150的下面與凹 部16的底面之間具間隙下,流管152支撐著可動噴嘴150。 -16 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 29?公釐) 559927 A7 B7 五、發明説明(14 ) 流管152透過支撐面170上的開孔170a再向上方延伸之 後,往水平方向彎曲,再向下彎曲為L形,藉以使其上端 部浸於充填處理液174的容器172之内。支撐面170等構成的 支撐機制與維持板30相連接,藉以使支撐機制與維持板3〇 可以且上下作動。藉流管154的一端連接於未圖示的幫浦, 使維持板30的凹部32之内減壓時,容器172之内的處理液 174則會在流管152内上昇下降,抵達可動噴嘴15〇,由其覆 蓋皿狀部15〇a的圓板150b上的多數噴出口向下方噴出,供 給處理液174至被處理基板1〇上側面的處理範圍(即〇形圈 34所圍繞的部分)。之後,處理液透過可動嘴嘴15〇與維持 板30之凹部32的底面之間的間隙以及開孔32c,自流管154 向外部排出。其結果為,對被處理基板1〇兩面的處理範圍 以處理液施予處理(例如洗淨處理)。 如圖6所示之有關第3實施例中的基板處理裝置,也可以 獲得與圖5所示之前述第2實施例同樣的作用效果。此外在 第3實施例中,被處理基板1〇的兩面可以且處理,因此可以 更進一步地提昇處理效率。再者,在第3實施例中,亦可以 處理氣體的流通取代處理液,對被處理基板1〇進行乾燥處 理0 第4實施例 圖7 =示=有關本發明第4實施例的葉片式基板處理裝 置’與前述第1實施例等中相同的部分則附上相同的符號。 於第4實施例中,同樣地,被處理基板1〇以〇形圈18、μ 為介,挾於維持板14、3G之間做推壓維持。與前述各實施Since the processing liquid or the processing gas is supplied to the processing target of the substrate 1G to be processed, the processing efficiency can be improved. In addition, the sizes of the 'maintaining plates 14, 30 are only slightly larger than the substrate 10 to be processed, which is the same as the first embodiment described above, and it is not necessary to provide an operation mechanism related to the substrate 10 to be processed. In the second embodiment, since the processing liquid is further supplied and discharged through the opening 16e provided in the bottom surface of the recessed portion 16 of the holding plate 14, the entire substrate processing apparatus can be miniaturized. If the movable nozzle 50 can be appropriately rotated and moved up and down in processing, the processing efficiency and the uniformity in processing will be further improved. Although the processing of the processing substrate 1G with the processing liquid has been described in the second embodiment, the processing liquid may be used instead of the processing liquid to dry the processing substrate 10. Third Embodiment FIG. 6 shows a blade-type substrate processing apparatus according to a third embodiment of the present invention, which uses the same components in each of the embodiments shown in FIG. 1 and FIG. 5, and therefore is the same as that of each embodiment. Attach the same symbols. That is, in the substrate processing apparatus of the third embodiment shown in FIG. 6, the portion below the substrate maintenance plate 14 to be processed uses the same composition as that of the second embodiment shown in FIG. 5, so detailed description thereof is omitted. The components above the substrate 1 () and the holding plate 14 are the composition of the second embodiment. In the same manner as in the example of heart penetration, in the third embodiment, the substrate 10 to be processed passes through the 0-rings 18 and 34 during processing, and is held between the holding plates 14 and 30 by pressing. In addition, similar to the aforementioned first embodiment, both of the holding plates 14 and 30 are formed with recesses 16 and 32 separately, and both sides of the substrate 10 to be processed can be processed. That is, the lower side of the substrate 10 to be processed draws the processing range by the recess 16 of the holding plate 14 and the O-ring U, and the upper side of the processed substrate 10 draws the recess 32 of the holding plate 30 and the 0-ring 34-15-This paper size applies Chinese national standards (CNS) A4 specification (21〇X 297 public love) 559927 A7 B7 V. Description of the invention (13 draws the processing range. As in the second embodiment, there is more than one outlet within the recess 16 of the maintenance plate 14 The circular plate 50b covers the dish-like member 50a of the movable nozzle 50. In the third embodiment, a circular plate 150b having a large number of ejection ports is also provided in the recess 32 of the holding plate 30 to cover the movable nozzle. The plate-shaped member 15a of 15 °. In addition, the ejection port of the circular plate 150b faces the opening of the recessed portion 32. The flow f 152 extends upward from the sustaining plate 30, and its outer diameter is smaller than the opening provided at the bottom of the recessed portion 32 of the sustaining plate 30. The inner diameter of the hole 32c is connected to the movable nozzle 150 through the opening 32c. The flow tube 154 is also connected to the opening 32e and extends upward from the opening 32c into an L shape, and the flow tube 152 extends upward from the middle of the flow tube 154. Passing through the closing member 56, it is led out from its L-shaped bent portion, and then extends further upward. The flow tube 152 The closing member 156 is in a liquid-tight state, and can be freely moved and installed on the flow pipe 154. Further above, a support table 160 having a motor (M) 164 is provided, and a flange 158 provided on the flow pipe 152 is borrowed. The bearing 162 of the support table 160 supports free operation. The rotation of the motor 164 is transmitted to the flow tube 152 through the power transmission mechanism 166. That is, the flow tube 152 is driven to rotate in the direction of arrow P by the motor 164. The support table 160 and the support surface 170 are disposed on the support surface 170. The upper and lower driving devices 168 are connected, and the driving rods 168a and 168b of the upper and lower driving devices 168 are driven in the up and down direction as shown by the arrow Q '. With the up and down driving of the support table 160, the flow tube 152 is also in the up and down direction. The movable nozzle 150 and the flow tube 152 in the recessed portion 32 of the plate 30 are maintained to rotate and move up and down. In addition, the movable nozzle 150 is not limited to actuated vertically, and the lower surface of the movable nozzle 150 and the bottom surface of the recessed portion 16 Under the gap, the flow tube 152 supports the movable nozzle 150. -16-This paper size applies to China National Standard (CNS) A4 (210 X 29? Mm) 559927 A7 B7 V. Description of the invention (14) Flow tube 1 52 passes through the opening 170a in the support surface 170 and then extends upward, then bends horizontally, and then bends downward into an L shape, so that the upper end portion thereof is immersed in the container 172 filled with the treatment liquid 174. The support surface 170, etc. The support mechanism formed is connected to the maintenance plate 30, so that the support mechanism and the maintenance plate 30 can move up and down. One end of the flow pipe 154 is connected to a pump (not shown), so that the recess 32 of the maintenance plate 30 is reduced. When pressed, the processing liquid 174 in the container 172 rises and falls in the flow tube 152 and reaches the movable nozzle 150. Most of the ejection ports on the circular plate 150b covering the dish-shaped portion 15a are discharged downward and supplied. A processing range from the processing liquid 174 to the upper side of the substrate 10 to be processed (that is, a portion surrounded by the O-ring 34). Thereafter, the treatment liquid passes through the gap between the movable nozzle 15 and the bottom surface of the recessed portion 32 of the holding plate 30 and the opening 32c, and is discharged to the outside through the flow tube 154. As a result, the processing range of both sides of the substrate 10 to be processed is treated with a processing liquid (for example, a cleaning process). The substrate processing apparatus according to the third embodiment shown in FIG. 6 can also obtain the same effects as those of the second embodiment shown in FIG. 5. In addition, in the third embodiment, both sides of the substrate 10 to be processed can be processed at the same time, so the processing efficiency can be further improved. Furthermore, in the third embodiment, the flow of the processing gas may be used instead of the processing liquid, and the substrate 10 to be processed may be dried. The fourth embodiment is shown in FIG. 7. FIG. 7 shows a blade substrate according to the fourth embodiment of the present invention. The same reference numerals are assigned to the same portions of the processing device as those in the first embodiment and the like described above. In the fourth embodiment, similarly, the substrate to be processed 10 is held between the holding plates 14 and 3G through the o-rings 18 and μ. And each implementation
裝 訂Binding
-17 --17-
559927559927
例不同的是,維括4 时…、泰 ,,,持板14、30上均不設凹部,被處理基板10 早早透過0形圈18、34 ’挾於於維持板U、30之間形圈 18設為封閉環狀,圍繞維持板㈣主要面内側的給定範 圍,而〇形圈34設為封閉環狀,目繞維持板3G的主要 側的給定範圍。 此外,沿維持板14的面邊設另一封閉環狀的〇形圈8〇 ; 同樣地,沿維持板30的面邊設另一封閉環狀的〇形圈U。 該0形圈8G、82持以橡膠或塑膠等彈性構件構成。 覆二構件84用於覆蓋維持板14、3〇挾住被處理基板做 推壓維持的狀態下所形成的重疊體。即覆蓋構件84上具有 承受維持板14、30及被處理基板1〇等所構成的重疊體的凹 部86。凹部86的側壁由封閉環狀的卡合部86a所構成。卡合 部·係在覆蓋構件84的凹部86之内,在上述重叠體插入的 狀態下,與Ο形圈80、82個別卡合而成。此外,卡合部86八 上形成與外側連通的開孔86a、86b,該開孔在重疊體插入 時,位於Ο形圈80、82之間。此外,流管88、9〇個別與開 孑L 86a、86b相連接。 卡合部86A在處理時藉由未圖示的維持手段,對維持板 14、30的面邊個別透過〇形圈80、82做推壓維持。藉此, 挾住被處理基板10的重疊體内部藉由〇形圈8〇、82及卡合 部86A的内壁予以密封,沿被處理基板1〇的面邊形成流體 的流路92。即,由連接於開孔86a的流管8 8將處理液或處理 氣體供給至流路92之中,之後由連接於開孔86b的流管90 排出。此時,藉由處理液或處理氣體在流路92内的流通, -18 - 本紙張尺度適用中®國家標準(CNS) A4规格(210 X 297公釐) 559927 A7 B7 五、發明説明(16 對被處理基板1 〇的面邊及其邊傍部分施予處理(例如洗淨 處理或乾燥處理p 圖7所示係有關本發明第4實施例的基板處理裝置中,處 理液或處理氣體的流路92沿被處理基板1〇的面邊限定為封 閉環狀路徑’因此處理液或處理氣體的使用量少量即可。 前述與各實施例有關的基板處理裝置中,處理被處理基板 10的面邊有其困難,但在與第4實施例有關的基板處理裝置 中’可以對被處理基板1〇的面邊做限定性處理。因而,處 理在前述各實施例中未處理到的被處理基板1〇的面邊情況 時,可以採用第4實施例。 圖8為圖7所示第4實施例的變化衍生例,同一構成要素則 附上相同的符號,省略其詳細說明。 圖8所示的變化衍生例特微有以下2點。 (1) 廢除Ο形圈34,在與被處理基板1〇呈相對的維持板3〇 主要面上分散配置分隔物94a、94b予以取代。藉此, 維持板3 0上分隔物方向的主要面及與其相互相對的 被處理基板10上側面之間形成新的流路96。該流路 96與前述流路92相連結,流通給定的流體(即處理液 或處理氣體)。 (2) 覆蓋構件84的中央部設開孔84a,維持板3〇的中央部 亦設開孔30a。配設流管46穿過該開孔30a、84a ,以 該流管46為介,將前述流路96内的流體導出至外 部。即,自流管88、90所供給的處理液或處理氣體 個別在流路92、96中流通,之後以中央部的流管46 -19 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559927For example, the difference is that at 4 o'clock ..., Thai ,, there are no recesses on the holding plates 14, 30, and the substrate 10 to be processed passes through the 0-rings 18, 34 'early and stays between the holding plates U, 30. The ring 18 is set in a closed loop to surround a given range inside the main surface of the main plate 而, and the O-ring 34 is set in a closed loop to surround the given range of the main side of the maintenance plate 3G. In addition, another closed annular O-ring 80 is provided along the surface of the holding plate 14; similarly, another closed annular O-ring U is provided along the surface of the holding plate 30. The 0-rings 8G and 82 are made of elastic members such as rubber or plastic. The second covering member 84 is used to cover the maintaining plates 14 and 30 while holding the substrate to be processed and pressing and maintaining the overlapped body. That is, the covering member 84 has a recessed portion 86 for receiving an overlapping body composed of the holding plates 14, 30, the substrate to be processed 10, and the like. The side wall of the recessed portion 86 is constituted by a closed annular engagement portion 86a. The engaging portion is formed in the recessed portion 86 of the covering member 84, and the O-rings 80 and 82 are individually engaged with the overlapped body inserted. In addition, the engaging portion 86 is formed with openings 86a and 86b which communicate with the outside. The openings are located between the O-rings 80 and 82 when the overlapped body is inserted. The flow tubes 88 and 90 are connected to the openings L 86a and 86b, respectively. During processing, the engaging portion 86A presses and maintains the surfaces of the holding plates 14 and 30 through the o-rings 80 and 82, respectively, by a maintenance means (not shown). Thereby, the inside of the superimposed body holding the substrate 10 to be processed is sealed by the O-rings 80 and 82 and the inner wall of the engaging portion 86A, and a fluid flow path 92 is formed along the surface of the substrate 10 to be processed. That is, the processing liquid or the processing gas is supplied into the flow path 92 through the flow tube 88 connected to the opening 86a, and is then discharged through the flow tube 90 connected to the opening 86b. At this time, with the circulation of the processing liquid or the processing gas in the flow path 92, -18-This paper size is applicable ® National Standard (CNS) A4 specification (210 X 297 mm) 559927 A7 B7 V. Description of the invention (16 The surface of the substrate 10 to be processed and its edges are treated (for example, a washing process or a drying process). As shown in FIG. 7, in the substrate processing apparatus according to the fourth embodiment of the present invention, The flow path 92 is defined as a closed loop path along the side of the substrate 10 to be processed. Therefore, a small amount of the processing liquid or the processing gas may be used. In the substrate processing apparatus according to each of the embodiments, the substrate 10 to be processed is processed. The surface edge has its difficulties, but in the substrate processing apparatus related to the fourth embodiment, 'the surface edge of the substrate 10 to be processed can be limitedly processed. Therefore, the processing is not performed in the foregoing embodiments. In the case of the surface of the substrate 10, the fourth embodiment can be adopted. Fig. 8 is a modified derivative example of the fourth embodiment shown in Fig. 7, and the same constituent elements are attached with the same symbols, and detailed descriptions thereof are omitted. Example changes shown There are two points as follows. (1) The O-ring 34 is abolished, and the spacers 94a and 94b are dispersedly arranged on the main surface of the holding plate 30 opposite to the substrate 10 to be treated. By doing so, the separation is maintained on the holding plate 30 A new flow path 96 is formed between the main surface in the object direction and the upper surface of the substrate 10 opposite to each other. This flow path 96 is connected to the aforementioned flow path 92 and circulates a given fluid (ie, a processing liquid or a processing gas). (2) An opening hole 84a is provided in the central portion of the covering member 84, and an opening hole 30a is also provided in the central portion of the holding plate 30. A flow pipe 46 is passed through the opening holes 30a and 84a, and the flow pipe 46 is used as an intermediate. The fluid in the above-mentioned flow path 96 is discharged to the outside. That is, the processing liquid or the processing gas supplied from the flow tubes 88 and 90 individually flows in the flow paths 92 and 96, and then the flow tube 46 in the center portion is used.-This paper Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 559927
為介,排出至外部。此時,亦可以不以流管9〇做為 處理液或處理氣體的供給口,而使其做為排出口。 此外,就分隔物94a、94b而言,使用上最好是低接 觸面積,使被處理基板1 〇的處理範圍在做處理時不 構成妨礙。例如,可以以突起狀之物做為分隔物, 不過此時須考慮被處理基板10的表面不致產生刮 傷。例如可做為該分隔物的材質有氟橡膠等含氟材 料。 圖8的基板處理裝置中,由流管88、9〇供給處理液或處理 氣體至流路92、96,由流管46排出至外部,因此可以對被 處理基板10的面邊和分隔物方向的主表面且施予洗淨或乾 燥處理。在此情況下,處理液或處理氣體的流路限定為沿 被處理基板10的面邊及另隔物方向的主表面的空間範圍, 因此與被處理基板1 〇全面施予處理的情況相比,可以減少 處理液或處理氣體的使用量。此外,由於處理液或處理氣 體的流通可以更為順暢,因此可以提昇處理上的均一性和 處理效率。 於圖8之中,使處理液或處遂氣體的流通方向反向亦 了 意即’由流管46供給處理液或處理氣體,自中央部向 邊緣部流通流路92、96之後,由兩側的流管88、9〇排出亦 可。此外,亦可以〇形圈18取代分隔物,在維持板14上形 成開孔連接流管,使處理液或處理氣體得以排出。在此情 況下’可以對被處理基板1 〇的兩側可以且處理。此外,最 好使覆蓋構件84的開孔86a、86b沿卡合部86A的封閉環做多 -20 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 559927 A7 _____B7 五、發明説明(18 ) 數分散配置。 第5實施例 圖10所示為有關本發明第5實施例的基板處理裝置,為應 用於使用微波放電的電漿蝕刻裝置的應用例。圖丨〇中與圖6 所示的第3實施例為同一構成要素則附上相同的符號,省略 其詳細說明。第5實施例係以處理氣體施予微波放電處理後 所產生的化學基(radical)對基板表面做洗淨(cieaning)。 詳述之’即以石英材質個別形成維持板14及3〇,將被處 理基板10推壓維持於其之間。此外,〇形圈18、34的材質使 用氟樹脂。再對流管54、154施予真空幫浦排氣。 邊緣部配置UV燈(即放電起動機),混合3種的氣體 GASJ02) > GAS2(N2)、GASn(H2)的輸送管(石英材質)以微波 產生機Ml、M2為介,個別連接流管52、丨52。藉此,生成 微波放電電漿的處理氣體供給至被處理基板丨〇的各主要 面,施予洗淨處理。 此外,圖10中,可對被處理基板1〇的兩面施予處理,或 僅對單面施予處理。 第6實施例 圖11所示為有關本發明第6實施例的基板處理裝置重要 部的斜視圖。第6實施例係對如顯示器用基板等角形基板進 订洗淨處理等,將角形的被處理基板1〇推壓維持於維持板 14及30之間。角形的維持板14及30上形成適宜的凹部以及 開孔,處理劑(藥品、水、處理氣體等)以流管為介做供給 排出此外’在維持板14上側的角形面邊上,使〇形圈18 _____ - 21 - 張尺度適财S國轉準(CNS) 559927 A7 ___B7 五、發明説明(19 ) 嵌合入溝槽足中;同樣地也在維持板3〇下側的角形面邊 上,使0形圈嵌合入溝槽之中。藉此,個別畫定角形的被 處理基板10兩面上的角形處理範圍。 此外,嵌合於溝槽之中0形圈18可以使用剖面圓形者, 而使用剖面方形的板狀〇形圈以嵌合入溝槽之中亦可。 如以上說明,有關本發明的基板處理方法及裝置具有種 種技術性的特徵及效果,玆在以下對其做說明。 (1) 本發明的基板處理方法及裝置係將被處理基板挾於 一組的維持板之間做推壓維持,使用處理液或處理 氣體(以下稱處理劑)施予給定的處理(即洗淨處理或 乾燥處理)所構成。 (2) 詳述之,即與被處理基板的主要面呈相對的維持板 以封閉環狀的彈性構件形圈)為介做推壓,藉此, 在被處理基板的主要面上以彈性構件圍繞畫定處理 範圍。此外,在各維持板上彈性構件所圍繞的範圍 形成凹部’以該凹部為介流通處理劑,藉比可對被 處理基板的處理範圍施予處理,或使用义等惰性氣 體對處理範圍施予乾燥處理。處理範圍畫定為較被 處理基板主要面小的面積;再者,維持板凹部的面 積同樣為該處理範圍大小的程度。因比,可以減少 處理劑的使用量。將維持板凹部的内部做成球狀(半 球狀)可以使處理劑的流通順暢,提昇處理上的均一 性。此外’在維持板上多少與處理範圍相對應的部 分設外部向内的觀察用窗,作業者在對被處理基板 -22 - — 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 559927 A7 B7 五、發明説明(2〇 ) 的處理進行狀態等的確認、測定上都十分方便。例 如’可以將維持板的一部分由透明材料(透明玻璃或 壓克力等)構成以實現該觀察用窗。 (3) 於上述中’對被處理基板兩邊的主要面且施予處理 可以提昇處理效率。此外,亦可對一邊的主要面與 另一邊的主要面施予不同種類的處理劑。例如,可 以對一邊的主要面以處理液進行洗淨處理,而另一 邊的主要面則以處理氣體進行乾燥處理。 (4) 以覆蓋構件將對被處理基板做推壓維持的一組維持 板等所構成的重疊體整體覆蓋,其封閉環狀的卡合 部與各維持板的面邊之間配置彈性構件的組成亦 可。意即’沿被處理基板的面邊形成流路,在該流 路内流通處理劑,對被處理基板的面邊施予處理。 即對被處理基板的面邊及其邊傍部分限定性進行洗 淨處理或乾燥處理等。在此情況下,由於限定處理 範圍,因此可以減少處理劑的使用量。 (5) 於前述中,一邊的維持板與被處理基板之間配置複 數個分隔物以取代封閉環狀的彈性構件亦可。即流 路不僅在被處理基板的面邊,也沿著分隔物方面的 主要面而形成。藉此,對被處理基板的面邊以及主 要面施予選擇性處理。 (6) 在基板處理裝置中,不須如以往一般設置被處理基 板的迴轉機制,因此可以實現裝置整體的小型化。 此外,可以支撐由一組的維持板等對被處理基板做 -23 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公酱) 559927 A7 B7 五、發明説明(21 ) 推壓維持所構成的重疊體而運作自如,並可以控制 其運轉角度。藉此,設定所欲的運轉角度使處理劑 得以順暢流通,並使運轉角度在處理中做週期性變 化,可以提昇處理上的均一性與處理效率。 (7) 亦可使處理劑由配置於維持板凹部的噴嘴上的複數 噴出口喷出,供給至被處理基板的處理範圍。此外, 亦可以將支撐喷嘴並供給處理劑的流管做成上下活 動自如且迴轉自如。藉此,可以提昇處理上的均一 性與處理效率。 (8) 本發明也可以應用在電漿蝕刻裝置上,亦可以以微 波放電電漿產生的處理氣體作用在推壓維持於石英 材質的維持板之間的被處理基板,施予洗淨處理。 (9) 被處理基板的形狀不須限定為圓形,也可以處理如 顯示器用基板等角型的基板。在此情況下,維持板 使用角型以畫定方形的處理範圍。 此外’本發明不限定於前述的各實施例,在發明的範蜂 内,可做種種的變更。Discharge to the outside. At this time, the flow pipe 90 may not be used as a supply port for the processing liquid or processing gas, but may be used as a discharge port. In addition, as for the partitions 94a and 94b, it is preferable to use a low contact area so that the processing range of the substrate 10 to be processed does not hinder the processing. For example, a protrusion may be used as the spacer, but in this case, it is necessary to consider that the surface of the substrate 10 to be processed does not cause scratches. For example, the separator can be made of a fluorine-containing material such as fluorine rubber. In the substrate processing apparatus of FIG. 8, the processing liquid or the processing gas is supplied from the flow tubes 88 and 90 to the flow paths 92 and 96, and is discharged to the outside by the flow tube 46. The main surface is cleaned or dried. In this case, the flow path of the processing liquid or the processing gas is limited to the space range along the main surface of the substrate 10 to be processed and the direction of the other spacers. Therefore, it is compared with the case where the substrate 10 is fully processed. , Can reduce the use of processing liquid or processing gas. In addition, since the flow of the processing liquid or the processing gas can be smoother, the uniformity and efficiency of the processing can be improved. In FIG. 8, the flow direction of the processing liquid or the processing gas is reversed, which means that the processing liquid or the processing gas is supplied from the flow tube 46, and the flow paths 92 and 96 flow from the central portion to the edge portion. The side flow tubes 88 and 90 may also be discharged. In addition, an o-ring 18 may be used in place of the separator, and an open-hole connection flow pipe may be formed on the maintenance plate 14 to discharge the processing liquid or processing gas. In this case, it is possible to process both sides of the substrate 10 to be processed. In addition, it is better to make the openings 86a, 86b of the covering member 84 along the closed ring of the engaging portion 86A-20-This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 559927 A7 _____B7 V. SUMMARY OF THE INVENTION (18) The number is distributed. Fifth Embodiment Fig. 10 shows an example of application of a substrate processing apparatus according to a fifth embodiment of the present invention to a plasma etching apparatus using microwave discharge. The same components as those in the third embodiment shown in FIG. 6 are assigned the same reference numerals in FIG. 0, and detailed descriptions thereof are omitted. The fifth embodiment is a method of cleaning the surface of a substrate by using a chemical radical generated by applying a processing gas to a microwave discharge treatment. In detail, the maintenance plates 14 and 30 are individually formed of quartz material, and the processing substrate 10 is pushed and maintained therebetween. The o-rings 18 and 34 are made of fluororesin. The convection pipes 54 and 154 are further subjected to vacuum pump exhaust. A UV lamp (ie, a discharge starter) is arranged at the edge, and three kinds of gases GASJ02 are mixed. ≫ The ducts (quartz material) of GAS2 (N2) and GASn (H2) are connected by microwave generators M1 and M2. Tube 52, 52. Thereby, the processing gas which generates a microwave discharge plasma is supplied to each main surface of the to-be-processed substrate, and a cleaning process is performed. In addition, in FIG. 10, both sides of the substrate 10 to be processed may be processed, or only one side may be processed. Sixth Embodiment Fig. 11 is a perspective view showing an important part of a substrate processing apparatus according to a sixth embodiment of the present invention. In the sixth embodiment, an angular substrate such as a display substrate is subjected to a cleaning process, and the angular substrate 10 to be pressed is maintained between the holding plates 14 and 30. Appropriate recesses and openings are formed in the angled maintenance plates 14 and 30, and the processing agent (medicine, water, processing gas, etc.) is supplied and discharged through the flow tube. In addition, on the side of the angled surface on the upper side of the maintenance plate 14, O-ring 18 _____-21-Zhang Jiji Shicai S country transfer standard (CNS) 559927 A7 ___B7 V. Description of the invention (19) Fitted into the grooved foot; similarly, the angled surface edge of the lower side of the plate is also maintained , Fit the O-ring into the groove. Thereby, the angular processing ranges of the two sides of the substrate 10 to be processed which are angularly fixed are individually drawn. In addition, the O-ring 18 fitted into the groove may be a circular cross-section, or a plate-shaped O-ring having a square cross-section may be used to fit into the groove. As described above, the substrate processing method and apparatus of the present invention have various technical features and effects, and are described below. (1) The substrate processing method and device of the present invention are used to push and maintain a substrate to be processed between a group of maintenance plates, and use a processing liquid or a processing gas (hereinafter referred to as a processing agent) to give a given treatment (that is, Washing treatment or drying treatment). (2) In detail, the holding plate opposite to the main surface of the substrate to be processed is urged by a closed ring-shaped elastic member (ring), whereby the main surface of the substrate to be processed is elasticized. Set the processing range around the drawing. In addition, a recessed portion is formed in a range surrounded by the elastic member on each of the holding plates. With the recessed portion as a flow-through processing agent, the processing range of the substrate to be processed can be treated by comparison, or the processing range can be imparted with an inert gas such as Yoshida. Drying. The processing range is set to a smaller area than the main surface of the substrate to be processed; moreover, the area of the concave portion of the maintenance plate is also the same as that of the processing range. As a result, the amount of treatment agent can be reduced. Spherical (hemispherical) interior of the recessed part of the holding plate can smooth the flow of the treatment agent and improve the uniformity of the treatment. In addition, on the maintenance board, a part corresponding to the processing range is provided with an external inward observation window, and the operator is processing the substrate to be processed-22-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ) 559927 A7 B7 5. It is very convenient to confirm and measure the processing progress status of the invention description (2〇). For example, 'a part of the holding plate may be made of a transparent material (transparent glass, acrylic, etc.) to realize the observation window. (3) In the above method, the main surface on both sides of the substrate to be processed and processed can improve the processing efficiency. In addition, different types of treatment agents may be applied to the main surface on one side and the main surface on the other side. For example, the main surface of one side may be washed with a treatment liquid, and the main surface of the other side may be dried with a processing gas. (4) The covering member covers the entire overlapping body composed of a set of holding plates that presses and maintains the substrate to be processed, and an elastic member is arranged between the closed annular engaging portion and the sides of each holding plate. Composition is also possible. In other words, a flow path is formed along the surface of the substrate to be processed, and a processing agent is flowed through the channel to treat the surface of the substrate. In other words, the surface of the substrate to be processed and its edges are limitedly subjected to cleaning treatment or drying treatment. In this case, since the processing range is limited, the amount of the processing agent used can be reduced. (5) In the foregoing, a plurality of spacers may be arranged between the one side of the holding plate and the substrate to be processed instead of the closed loop elastic member. That is, the flow path is formed not only on the surface side of the substrate to be processed, but also along the main surface of the separator. Thereby, selective processing is performed on the surface edge and the main surface of the substrate to be processed. (6) In the substrate processing apparatus, it is not necessary to provide a turning mechanism for the substrate to be processed as in the past, so that the entire apparatus can be miniaturized. In addition, it can support a group of maintenance plates to do the processing of the substrate. -23-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male sauce) 559927 A7 B7 V. Description of the invention (21) It can operate freely while maintaining the formed overlap, and can control its operation angle. In this way, setting a desired operating angle allows the processing agent to circulate smoothly and periodically changes the operating angle during processing, which can improve uniformity and efficiency in processing. (7) The processing agent may be ejected from a plurality of nozzles arranged on the nozzles provided in the recessed portion of the holding plate and supplied to the processing range of the substrate to be processed. In addition, the flow tube supporting the nozzle and supplying the treatment agent can be made to move up and down freely and freely. This can improve processing uniformity and processing efficiency. (8) The present invention can also be applied to a plasma etching apparatus, or a processing gas generated by a microwave discharge plasma can be used to press a substrate to be treated held between a quartz-made holding plate and perform a cleaning treatment. (9) The shape of the substrate to be processed is not limited to a circular shape, and angular substrates such as display substrates can also be processed. In this case, the holding plate uses a corner shape to draw a square processing range. In addition, the present invention is not limited to the foregoing embodiments, and various changes can be made within the scope of the invention.
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001162153 | 2001-05-30 |
Publications (1)
Publication Number | Publication Date |
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TW559927B true TW559927B (en) | 2003-11-01 |
Family
ID=19005322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW091111312A TW559927B (en) | 2001-05-30 | 2002-05-28 | Substrate processing method and apparatus |
Country Status (4)
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KR (1) | KR100614187B1 (en) |
CN (1) | CN1267973C (en) |
HK (1) | HK1049547A1 (en) |
TW (1) | TW559927B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3560962B1 (en) * | 2003-07-02 | 2004-09-02 | エス・イー・エス株式会社 | Substrate processing method and substrate processing apparatus |
US20070026150A1 (en) * | 2003-07-04 | 2007-02-01 | Takao Horiuchi | Substrate processing system |
TWI378502B (en) | 2006-06-12 | 2012-12-01 | Semes Co Ltd | Method and apparatus for cleaning substrates |
KR100776281B1 (en) * | 2006-06-20 | 2007-11-13 | 세메스 주식회사 | Apparatus for treating substrates |
KR102359846B1 (en) * | 2021-08-13 | 2022-02-09 | (주)피앤테크 | Gas furnishing device for homogeneous gas furnishing into the chamber of deposition equipment |
-
2002
- 2002-05-28 TW TW091111312A patent/TW559927B/en not_active IP Right Cessation
- 2002-05-29 KR KR1020020029942A patent/KR100614187B1/en not_active IP Right Cessation
- 2002-05-30 CN CNB02121655XA patent/CN1267973C/en not_active Expired - Fee Related
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2003
- 2003-03-04 HK HK03101589.2A patent/HK1049547A1/en unknown
Also Published As
Publication number | Publication date |
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CN1388569A (en) | 2003-01-01 |
KR20020091819A (en) | 2002-12-06 |
HK1049547A1 (en) | 2003-05-16 |
KR100614187B1 (en) | 2006-08-18 |
CN1267973C (en) | 2006-08-02 |
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