TW552709B - High-speed lateral bipolar device in SOI process and method thereof - Google Patents
High-speed lateral bipolar device in SOI process and method thereof Download PDFInfo
- Publication number
- TW552709B TW552709B TW089119916A TW89119916A TW552709B TW 552709 B TW552709 B TW 552709B TW 089119916 A TW089119916 A TW 089119916A TW 89119916 A TW89119916 A TW 89119916A TW 552709 B TW552709 B TW 552709B
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- TW
- Taiwan
- Prior art keywords
- field
- base
- bipolar transistor
- layer
- insulating layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000008569 process Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
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- 239000012777 electrically insulating material Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 210000003739 neck Anatomy 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002141 anti-parasite Effects 0.000 description 1
- 239000003096 antiparasitic agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/041—Manufacture or treatment of thin-film BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/311—Thin-film BJTs
Landscapes
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/406,451 US6376880B1 (en) | 1999-09-27 | 1999-09-27 | High-speed lateral bipolar device in SOI process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW552709B true TW552709B (en) | 2003-09-11 |
Family
ID=23608053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089119916A TW552709B (en) | 1999-09-27 | 2000-09-27 | High-speed lateral bipolar device in SOI process and method thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6376880B1 (enExample) |
| EP (1) | EP1218943A1 (enExample) |
| JP (1) | JP2003510849A (enExample) |
| KR (1) | KR100764919B1 (enExample) |
| TW (1) | TW552709B (enExample) |
| WO (1) | WO2001024273A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376880B1 (en) * | 1999-09-27 | 2002-04-23 | Advanced Micro Devices, Inc. | High-speed lateral bipolar device in SOI process |
| US6534834B1 (en) * | 2001-12-19 | 2003-03-18 | Agere Systems, Inc. | Polysilicon bounded snapback device |
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| US7800143B2 (en) * | 2006-07-13 | 2010-09-21 | Globalfoundries Inc. | Dynamic random access memory with an amplified capacitor |
| US7679955B2 (en) * | 2006-08-02 | 2010-03-16 | Advanced Micro Devices, Inc. | Semiconductor switching device |
| CN101964359B (zh) * | 2009-07-24 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双极晶体管及其形成方法、虚拟接地电路 |
| US20110018608A1 (en) | 2009-07-24 | 2011-01-27 | Semiconductor Manufacturing International (Shanghai) Corporation | Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit |
| US9281022B2 (en) | 2013-07-10 | 2016-03-08 | Zeno Semiconductor, Inc. | Systems and methods for reducing standby power in floating body memory devices |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0628264B2 (ja) * | 1985-10-07 | 1994-04-13 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2503460B2 (ja) | 1986-12-01 | 1996-06-05 | 三菱電機株式会社 | バイポ−ラトランジスタおよびその製造方法 |
| US4922315A (en) | 1987-11-13 | 1990-05-01 | Kopin Corporation | Control gate lateral silicon-on-insulator bipolar transistor |
| JPH023238A (ja) | 1988-06-20 | 1990-01-08 | Nissan Motor Co Ltd | 薄膜バイポーラトランジスタの製造方法 |
| JP3163092B2 (ja) * | 1990-08-09 | 2001-05-08 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH04116935A (ja) | 1990-09-07 | 1992-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5185280A (en) | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
| FR2672733B1 (fr) * | 1991-02-13 | 1997-08-22 | France Telecom | Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos. |
| JPH04317336A (ja) * | 1991-04-16 | 1992-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| US5420055A (en) | 1992-01-22 | 1995-05-30 | Kopin Corporation | Reduction of parasitic effects in floating body MOSFETs |
| US5315144A (en) | 1992-09-18 | 1994-05-24 | Harris Corporation | Reduction of bipolar gain and improvement in snap-back sustaining voltage in SOI field effect transistor |
| DE69433828T2 (de) | 1993-03-16 | 2005-03-17 | Canon K.K. | Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung |
| DE4418206C2 (de) | 1994-05-25 | 1999-01-14 | Siemens Ag | CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben |
| DE19515797C1 (de) | 1995-04-28 | 1996-09-19 | Siemens Ag | SOI-BiCMOS-Verfahren |
| JP3545583B2 (ja) * | 1996-12-26 | 2004-07-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| KR20000045305A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 완전 공핍형 에스·오·아이 소자 및 그 제조방법 |
| US6376880B1 (en) * | 1999-09-27 | 2002-04-23 | Advanced Micro Devices, Inc. | High-speed lateral bipolar device in SOI process |
-
1999
- 1999-09-27 US US09/406,451 patent/US6376880B1/en not_active Expired - Lifetime
-
2000
- 2000-08-01 KR KR1020027003997A patent/KR100764919B1/ko not_active Expired - Fee Related
- 2000-08-01 WO PCT/US2000/020958 patent/WO2001024273A1/en not_active Ceased
- 2000-08-01 JP JP2001527363A patent/JP2003510849A/ja active Pending
- 2000-08-01 EP EP00953778A patent/EP1218943A1/en not_active Withdrawn
- 2000-09-27 TW TW089119916A patent/TW552709B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003510849A (ja) | 2003-03-18 |
| US6376880B1 (en) | 2002-04-23 |
| EP1218943A1 (en) | 2002-07-03 |
| WO2001024273A1 (en) | 2001-04-05 |
| KR20020064291A (ko) | 2002-08-07 |
| KR100764919B1 (ko) | 2007-10-09 |
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| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |