KR100764919B1 - Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스 - Google Patents

Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스 Download PDF

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KR100764919B1
KR100764919B1 KR1020027003997A KR20027003997A KR100764919B1 KR 100764919 B1 KR100764919 B1 KR 100764919B1 KR 1020027003997 A KR1020027003997 A KR 1020027003997A KR 20027003997 A KR20027003997 A KR 20027003997A KR 100764919 B1 KR100764919 B1 KR 100764919B1
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South Korea
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region
base
transistor
insulating
semiconductor layer
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Korean (ko)
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KR20020064291A (ko
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홀스트존씨.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/041—Manufacture or treatment of thin-film BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs

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  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
KR1020027003997A 1999-09-27 2000-08-01 Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스 Expired - Fee Related KR100764919B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/406,451 1999-09-27
US09/406,451 US6376880B1 (en) 1999-09-27 1999-09-27 High-speed lateral bipolar device in SOI process

Publications (2)

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KR20020064291A KR20020064291A (ko) 2002-08-07
KR100764919B1 true KR100764919B1 (ko) 2007-10-09

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KR1020027003997A Expired - Fee Related KR100764919B1 (ko) 1999-09-27 2000-08-01 Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스

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US (1) US6376880B1 (enExample)
EP (1) EP1218943A1 (enExample)
JP (1) JP2003510849A (enExample)
KR (1) KR100764919B1 (enExample)
TW (1) TW552709B (enExample)
WO (1) WO2001024273A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376880B1 (en) * 1999-09-27 2002-04-23 Advanced Micro Devices, Inc. High-speed lateral bipolar device in SOI process
US6534834B1 (en) * 2001-12-19 2003-03-18 Agere Systems, Inc. Polysilicon bounded snapback device
US6768180B2 (en) * 2002-04-04 2004-07-27 C. Andre T. Salama Superjunction LDMOST using an insulator substrate for power integrated circuits
US7800143B2 (en) * 2006-07-13 2010-09-21 Globalfoundries Inc. Dynamic random access memory with an amplified capacitor
US7679955B2 (en) * 2006-08-02 2010-03-16 Advanced Micro Devices, Inc. Semiconductor switching device
CN101964359B (zh) * 2009-07-24 2013-06-19 中芯国际集成电路制造(上海)有限公司 双极晶体管及其形成方法、虚拟接地电路
US20110018608A1 (en) 2009-07-24 2011-01-27 Semiconductor Manufacturing International (Shanghai) Corporation Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit
US9281022B2 (en) 2013-07-10 2016-03-08 Zeno Semiconductor, Inc. Systems and methods for reducing standby power in floating body memory devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023238A (ja) * 1988-06-20 1990-01-08 Nissan Motor Co Ltd 薄膜バイポーラトランジスタの製造方法
JPH04116935A (ja) * 1990-09-07 1992-04-17 Fujitsu Ltd 半導体装置の製造方法
EP0616370A2 (en) * 1993-03-16 1994-09-21 Canon Kabushiki Kaisha Semiconductor bipolar device including SiGe and method for manufacturing the same
JP2003510849A (ja) * 1999-09-27 2003-03-18 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ｓｏｉプロセスにおける高速ラテラルバイポーラデバイス

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628264B2 (ja) * 1985-10-07 1994-04-13 富士通株式会社 半導体装置の製造方法
JP2503460B2 (ja) 1986-12-01 1996-06-05 三菱電機株式会社 バイポ−ラトランジスタおよびその製造方法
US4922315A (en) 1987-11-13 1990-05-01 Kopin Corporation Control gate lateral silicon-on-insulator bipolar transistor
JP3163092B2 (ja) * 1990-08-09 2001-05-08 株式会社東芝 半導体装置の製造方法
US5185280A (en) 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
FR2672733B1 (fr) * 1991-02-13 1997-08-22 France Telecom Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos.
JPH04317336A (ja) * 1991-04-16 1992-11-09 Toshiba Corp 半導体装置およびその製造方法
US5420055A (en) 1992-01-22 1995-05-30 Kopin Corporation Reduction of parasitic effects in floating body MOSFETs
US5315144A (en) 1992-09-18 1994-05-24 Harris Corporation Reduction of bipolar gain and improvement in snap-back sustaining voltage in SOI field effect transistor
DE4418206C2 (de) 1994-05-25 1999-01-14 Siemens Ag CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben
DE19515797C1 (de) 1995-04-28 1996-09-19 Siemens Ag SOI-BiCMOS-Verfahren
JP3545583B2 (ja) * 1996-12-26 2004-07-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR20000045305A (ko) * 1998-12-30 2000-07-15 김영환 완전 공핍형 에스·오·아이 소자 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023238A (ja) * 1988-06-20 1990-01-08 Nissan Motor Co Ltd 薄膜バイポーラトランジスタの製造方法
JPH04116935A (ja) * 1990-09-07 1992-04-17 Fujitsu Ltd 半導体装置の製造方法
EP0616370A2 (en) * 1993-03-16 1994-09-21 Canon Kabushiki Kaisha Semiconductor bipolar device including SiGe and method for manufacturing the same
JP2003510849A (ja) * 1999-09-27 2003-03-18 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ｓｏｉプロセスにおける高速ラテラルバイポーラデバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1991 IEEE 논문 A NOVEL HIGH-PERFORMANCE LATERAL BIPOLAR ON SOI

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Publication number Publication date
JP2003510849A (ja) 2003-03-18
TW552709B (en) 2003-09-11
US6376880B1 (en) 2002-04-23
EP1218943A1 (en) 2002-07-03
WO2001024273A1 (en) 2001-04-05
KR20020064291A (ko) 2002-08-07

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