TW548846B - Thyristor structure and overvoltage protection arrangement having such a thyristor structure - Google Patents

Thyristor structure and overvoltage protection arrangement having such a thyristor structure Download PDF

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Publication number
TW548846B
TW548846B TW091103790A TW91103790A TW548846B TW 548846 B TW548846 B TW 548846B TW 091103790 A TW091103790 A TW 091103790A TW 91103790 A TW91103790 A TW 91103790A TW 548846 B TW548846 B TW 548846B
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TW091103790A
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Christian Peters
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Infineon Technologies Ag
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

548846 A7 B7 五、發明説明。 ) 本發明關係一晶閘管結構及一如申請專利範圍第1及4項 之過電壓保護配置。 今曰，如果使用CMOS技術，一般晶閘管結構便具有一平 面結構。圖3所示為本型式的一種基本的晶閘管結構。在該 種組件的表面上配置一 ιΓ-型區2及一 p、型區3致使彼此相接 ，形成所謂的晶閘管結構基層區。一代表陽極端子的Ρ+-型 區1形成於η-型區2。一代表陰極端子的型區4形成於Ρ -型區3。一 ρ + -型區5形成於ρ、型區3成為控制端子。 在上述結構的生產中，覆蓋一氮化物層在表面8。該氮化 物層的電荷產生一寄生場效應。如果在生產中區2及區3中 含污染物，在表面8便會發生同樣的寄生效應。 上述晶閘管結構是通常用於過電壓保護配置即所謂ESD保 護。後者常利用積體電路MOS輸入階段。一過電壓偵測器 配置在積體電路需要保護部份，該過電壓偵測器連接晶閘 管的控制端子。本型式的配置已於US 4,896,243中揭露。 如果供應電壓需要監控，該晶閘管的陽極及陰極便連接 該保護元件的供應電壓。 如果發生過電壓，該晶閘管經控制端子打開及將過電壓 傳導開。 如果，如上述，形成寄生場效電晶體，則該監控的電壓 產生短路，導致保護的組件全部故障。 US 5,907,462及US 5,465，189揭露ESD結構，該結構利用 一場效結構加以控制。 本發明的目標為發展一晶閘管結構及一具有該晶閘管結 -4 本紙張尺度遴用中國國家標準(CNS) Α4規格(210 X 297公釐） 548846
構的過電壓保護配置因而避免寄生效應的影響。 康本發月利用申請專利範圍相關項目規定的措施達成 本目標。 藉由形成至少一補助電極位於第二及第三區兩區之一的 表面’便能將該補助電極區的表面置於一預定充電狀態。 t電壓保濩配置具有一種不會導致保護組件因寄生效 應而故障的晶閘管結構。 本發明的進一步有利特徵列於申請專利範圍的附屬項目。 .藉由提供第二及第三區各一個補助電極及連接第二區的 補助電極至第-端子及第三區的補助電極至第二端子，便 月匕以簡單方式在該表面上產生預定充電狀態。 藉由形成複矽補助電極及一隔離第二及第三區補助電極 的間極氧化物，便能利用-般技術簡單產生補助電極。 藉由積合過電壓保護配置於一半導體晶片上，便可簡單 又有效產生過電壓保護。 圖式簡單說明 以下利用具體實施例及參考附圖說明本發明。 其中： 圖1顯示根據本發明的一晶閘管結構， 圖2顯示根據本發明的一過電壓保護配置，及 圖3顯示一般的晶閘管結構。 具體實施例詳細說明 圖1顯示一根據本發明的晶閘管結構的具體實施例，基本 上，相當於前述圖3的介紹說明。其中，相同組件具有相同 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
548846 A7 _________B7 五、發明説明（3 ) " " 的參考符號。 在顯示的本具體實施例中，在稱為晶閘管的基層區的第 二區2及第三區3的共同表面上額外形成互相隔離的補助電 極。這些補助電極由閘極氧化物6，一般用於製造場效晶閘 管，及一複矽製成的電極接點7組成。形成於表面區2之表 面的該補助電極的電極接點7係導電連接第一端子丨，即該 陽極接點。位於第三區的補助電極係導電連接第二端子， 即陰極接點。由於寄生效應的結果，如此確保導電通道引 起的第一端子1及第二端子3之間的短路不能在基區表面上 形成。晶閘管結構只能在控制端子5感應到電流才打開。 圖2顯示一晶閘管結構過電流配置的基本圖。上述晶閘管 結構係由其陽極及陰極端子，即由第一端子丨及第二端子3 ’連接需要保護組件11的電源電壓VDD及VSS。一過電壓 4貞測器裝置13監視需要保護組件丨丨的電源電壓。當發生過 電壓’過電壓偵測器裝置i 3感覺電流經控制端子5流入基層 區，即晶閘管結構的第三區3。後者激發並短路電源電壓。 本配置特別適用於積合。即表示該晶閘管結構積合過電 壓偵測器裝置於偵測組件的表面，兩個補助電極避免晶閘 嘗結構為了消除寄生效應而置於一厚氧化物之下。結果， 晶閘管結構的動作完全保持。 另外’這樣的配置可應用於其他電壓監視，例如訊號輸 入電壓。 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)

Claims (1)

  1. 548846. !"第 0911037901^^^ 申請案 A8 L_iMS錢麟替換本(92年5月） g -- —-—_______ D8 六、申請專利範^ "" --- 1 · 一種晶閘管.結構，具有 -一第一端子（1)作為具有第一導電型的第一區， •一第二導電型的第二區（2)鄰接第一區（1)， -一第一導電型的第三區（3)鄰接第二區（2)及與後者具有 一共同表面（8)，及 -一第二端子（4)作為第二導電型的第四區，鄰接第三區， -其中，於第二區（2)及第三區（3)的共同表面上配^置:補 助電極（6、7)鄰接至少兩區之一，其特徵為任何情況 下補助電極（6、7)配置在第二區（2)及第三區（3)的共同 表面（8)上鄰接第二區（2)及第三區（3)。 2·如申請專利範圍第丨項之晶閘管結構，其特徵為補助電 極（6、7)由複矽及補助氧化物製成的導電 將導電區⑺與共同表面⑻隔離。 （）七成而 3. 一種過電壓保護配置，具有如申請專利範圍第丨項或第2 項之晶閘管結構，其中一需要保護組件（5)以導電方式配 置於第一端子（1)及第二端子（4)之間及第二或第三區（3) 具有一控制端子（5)，連接一過電壓偵測器以偵測需要保 護組件間的過電壓。 4. 如申請專利範圍第3項之過電壓保護配置，其特徵為控 制端子（5)為一與其配置區相同導電型的區，及具有比後 者較高的導電性。 5. 如申請專利範圍第3項之過電壓保護配置，其特徵為需 要保護組件的電源電壓（VDD、VSS)連接第一端子（1)及 弟二端子（4)。 548846 補滅 8 8 8 8 A B c D 々、申請專利範圍 6. 如申請專利範圍第3項之過電壓保護配置，其特徵為過 電壓保護配置係以積體方式配置於一單半導體晶片上。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
TW091103790A 2001-03-09 2002-03-01 Thyristor structure and overvoltage protection arrangement having such a thyristor structure TW548846B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10111462A DE10111462A1 (de) 2001-03-09 2001-03-09 Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur

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US (1) US7205581B2 (zh)
EP (1) EP1399968B1 (zh)
JP (1) JP4139688B2 (zh)
CN (1) CN1295787C (zh)
DE (1) DE10111462A1 (zh)
TW (1) TW548846B (zh)
WO (1) WO2002073695A2 (zh)

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Also Published As

Publication number Publication date
EP1399968A2 (de) 2004-03-24
CN1518769A (zh) 2004-08-04
US20040046181A1 (en) 2004-03-11
WO2002073695A2 (de) 2002-09-19
JP2004528709A (ja) 2004-09-16
WO2002073695A3 (de) 2003-12-24
DE10111462A1 (de) 2002-09-19
US7205581B2 (en) 2007-04-17
EP1399968B1 (de) 2012-11-28
CN1295787C (zh) 2007-01-17
JP4139688B2 (ja) 2008-08-27

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