TW546711B - Structure of light irradiation portion of light-irradiation-type heating apparatus and light-irradiation-type heating apparatus - Google Patents

Structure of light irradiation portion of light-irradiation-type heating apparatus and light-irradiation-type heating apparatus Download PDF

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Publication number
TW546711B
TW546711B TW090126789A TW90126789A TW546711B TW 546711 B TW546711 B TW 546711B TW 090126789 A TW090126789 A TW 090126789A TW 90126789 A TW90126789 A TW 90126789A TW 546711 B TW546711 B TW 546711B
Authority
TW
Taiwan
Prior art keywords
cooling air
lamp
mirror
light
light irradiation
Prior art date
Application number
TW090126789A
Other languages
English (en)
Chinese (zh)
Inventor
Shinji Suzuki
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Application granted granted Critical
Publication of TW546711B publication Critical patent/TW546711B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
TW090126789A 2000-12-27 2001-10-29 Structure of light irradiation portion of light-irradiation-type heating apparatus and light-irradiation-type heating apparatus TW546711B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000397555A JP2002198321A (ja) 2000-12-27 2000-12-27 光照射式加熱装置の光照射部の構造及び光照射式加熱装置

Publications (1)

Publication Number Publication Date
TW546711B true TW546711B (en) 2003-08-11

Family

ID=18862669

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090126789A TW546711B (en) 2000-12-27 2001-10-29 Structure of light irradiation portion of light-irradiation-type heating apparatus and light-irradiation-type heating apparatus

Country Status (5)

Country Link
US (1) US20020079798A1 (ja)
EP (1) EP1220300A2 (ja)
JP (1) JP2002198321A (ja)
KR (1) KR20020053712A (ja)
TW (1) TW546711B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4969732B2 (ja) * 2001-03-14 2012-07-04 東京エレクトロン株式会社 加熱装置、熱処理装置及びランプ冷却方法
JP4720154B2 (ja) * 2004-11-19 2011-07-13 ウシオ電機株式会社 フラッシュランプ発光装置
JP5920188B2 (ja) * 2012-11-26 2016-05-18 信越半導体株式会社 加熱装置
JP6299635B2 (ja) * 2015-03-12 2018-03-28 信越半導体株式会社 気相成長装置及び気相成長装置に用いるリフレクタ
US11255606B2 (en) * 2015-12-30 2022-02-22 Mattson Technology, Inc. Gas flow control for millisecond anneal system

Also Published As

Publication number Publication date
US20020079798A1 (en) 2002-06-27
EP1220300A2 (en) 2002-07-03
KR20020053712A (ko) 2002-07-05
JP2002198321A (ja) 2002-07-12

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