TW543053B - Capacitor and method for fabricating the same - Google Patents

Capacitor and method for fabricating the same Download PDF

Info

Publication number
TW543053B
TW543053B TW091105610A TW91105610A TW543053B TW 543053 B TW543053 B TW 543053B TW 091105610 A TW091105610 A TW 091105610A TW 91105610 A TW91105610 A TW 91105610A TW 543053 B TW543053 B TW 543053B
Authority
TW
Taiwan
Prior art keywords
interconnection
layer
forming
interconnection layer
electrode
Prior art date
Application number
TW091105610A
Other languages
English (en)
Chinese (zh)
Inventor
Toshiharu Takaramoto
Kunihiko Gotoh
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW543053B publication Critical patent/TW543053B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW091105610A 2001-10-30 2002-03-22 Capacitor and method for fabricating the same TW543053B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001332371A JP3977053B2 (ja) 2001-10-30 2001-10-30 容量素子及びその製造方法

Publications (1)

Publication Number Publication Date
TW543053B true TW543053B (en) 2003-07-21

Family

ID=19147793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091105610A TW543053B (en) 2001-10-30 2002-03-22 Capacitor and method for fabricating the same

Country Status (4)

Country Link
US (1) US6646860B2 (enExample)
JP (1) JP3977053B2 (enExample)
KR (1) KR100777902B1 (enExample)
TW (1) TW543053B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873185B2 (en) 2002-06-19 2005-03-29 Viasic, Inc. Logic array devices having complex macro-cell architecture and methods facilitating use of same
JP2004327619A (ja) * 2003-04-23 2004-11-18 Toshiba Corp 半導体集積回路装置及びその製造方法
US6940707B2 (en) * 2003-07-03 2005-09-06 Matsushita Electric Industrial Co., Ltd. Differential capacitor, differential antenna element, and differential resonator
US7390518B2 (en) * 2003-07-11 2008-06-24 Cadbury Adams Usa, Llc Stain removing chewing gum composition
US7187536B2 (en) * 2003-08-28 2007-03-06 Tessera, Inc. Structure and method of making a capacitor having low equivalent series resistance
JP3954561B2 (ja) * 2003-11-27 2007-08-08 沖電気工業株式会社 半導体集積回路の多層化電源ラインおよびそのレイアウト方法
US7335966B2 (en) * 2004-02-26 2008-02-26 Triad Semiconductor, Inc. Configurable integrated circuit capacitor array using via mask layers
WO2005098954A1 (en) * 2004-04-02 2005-10-20 Triad Semiconductor, Inc. Via configurable architecture for customization of analog circuitry in a semiconductor device
US7334208B1 (en) 2004-11-09 2008-02-19 Viasic, Inc. Customization of structured ASIC devices using pre-process extraction of routing information
KR100794521B1 (ko) 2005-12-17 2008-01-16 삼성전자주식회사 커패시터 어레이
JP2007294848A (ja) * 2006-03-30 2007-11-08 Eudyna Devices Inc キャパシタおよび電子回路
US7411270B2 (en) * 2006-04-03 2008-08-12 Freescale Semiconductor, Inc. Composite capacitor and method for forming the same
US7692309B2 (en) * 2007-09-06 2010-04-06 Viasic, Inc. Configuring structured ASIC fabric using two non-adjacent via layers
US7626802B2 (en) * 2007-10-19 2009-12-01 Oh Young Joo Metal capacitor and manufacturing method thereof
JP5104403B2 (ja) * 2008-02-29 2012-12-19 富士通株式会社 キャパシタ
US8362589B2 (en) * 2008-11-21 2013-01-29 Xilinx, Inc. Integrated capacitor with cabled plates
US9287350B2 (en) * 2014-07-22 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitor
JP6384553B2 (ja) * 2017-02-07 2018-09-05 株式会社ソシオネクスト 容量素子、容量アレイおよびａ／ｄ変換器
CN110323334B (zh) * 2019-07-09 2023-03-24 四川中微芯成科技有限公司 一种用寄生电容做adc电容的结构及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2508301B2 (ja) 1989-10-23 1996-06-19 日本電気株式会社 半導体集積回路
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5814850A (en) * 1995-08-22 1998-09-29 Nippon Steel Corporation Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage
US5633781A (en) * 1995-12-22 1997-05-27 International Business Machines Corporation Isolated sidewall capacitor having a compound plate electrode
US5926359A (en) * 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6078072A (en) * 1997-10-01 2000-06-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor
JP3842111B2 (ja) * 2001-11-13 2006-11-08 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR100777902B1 (ko) 2007-11-21
JP2003133424A (ja) 2003-05-09
JP3977053B2 (ja) 2007-09-19
US20030081371A1 (en) 2003-05-01
US6646860B2 (en) 2003-11-11
KR20030035765A (ko) 2003-05-09

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