TW541677B - Lead frame and copper alloy to be used for lead frame - Google Patents

Lead frame and copper alloy to be used for lead frame Download PDF

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Publication number
TW541677B
TW541677B TW090104583A TW90104583A TW541677B TW 541677 B TW541677 B TW 541677B TW 090104583 A TW090104583 A TW 090104583A TW 90104583 A TW90104583 A TW 90104583A TW 541677 B TW541677 B TW 541677B
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Taiwan
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copper alloy
lead frame
peak intensity
unavoidable impurities
patent application
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TW090104583A
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Chinese (zh)
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Yasuo Tomioka
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Nippon Mining Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Conductive Materials (AREA)

Abstract

An oxide-film adherence of copper alloy is improved by controlling the uppermost surface layer, which is evaluated by the XRD thin film method. In such layer, the copper-alloy crystals exhibit not more than 0.04 of a peak intensity ratio of {100}, relative to {111}.

Description

541677 A7541677 A7

-4- 五、發明説明(2 ) ^且浸潤性亦佳,其後在修整步驟捋住外界引線時則必 須提高硬度而不使銲屑產生,而使Sn濃度在80〜90wt%。 有關於這些封裝體之可靠性之最大課題,係在於表面 女衣k所务生之封裝體龜裂或剝離之問題。封裝體剝離之 機制,係在於半導體之封裝體構成後,樹脂與晶片銲墊 Pad,引線框上載置半導體晶片之部分)間密合性低時,於 其後進行熱處理時由於熱應力而產生。封裝體龜裂之發生 钱制如下。半導體之封裝體構成後,由於塑模(m〇ld )樹 曰S及收大氣/愚氣,之後在表面安裝時由於加熱而致水分 蒸發,若封裝體内部有裂缝,則水蒸氣將壓迫剝離面而構 成内壓作用。由此内壓使封裝體產生膨脹,而樹脂耐不住 内壓乃產生龜裂。由於表面安裝後之封裝體一旦產生龜 妓則水分或不純物質將會侵入而腐|虫晶片,導致半導體 機能之損害。另外,亦會因封裝體之膨脹使外觀不良以致 失去商品價值。這類封裝體龜裂或剝離之問題,近年來隨 著封裝體薄型化之進展而日益顯著。 此處,封裝體龜裂或剝離之問題係起因於樹脂與晶片 知墊間密合性不良,而,影響樹脂與晶片銲墊間之密合性 最大者係形成於母材表面之氧化膜,該氧化膜則係由於引 線框母材在封裝體裝配步驟中經過晶片接合或引線接合等 數種加熱程序而於樹脂封裝前形成者,厚度為數十〜數百 nm。由於晶片銲墊之表面係經由該氧化膜才由引線框母材 /、Μ月曰相接,因此忒氧化膜與引線框母材之密合性將對樹 脂與引線框母材之密合性造成重大之影響。 本紙張尺度適用中國Wii^TcNS ) Α4規格 541677 A7 五、發明説明( 另外’引線框用素材則使用以42% Ni — Fe合金為代表 之Fe — Ni系合金與銅合金。由於42%Ni—Fe合金之熱膨脹 係數與陶瓷近似,所以一直以來都被用作陶瓷封裝素材, 同%,在塑膠封裝上也被視為一種具高可靠性之引線框素 材而加以使用。但是,Fe—沁系合金與以合金相比有低導 電率之缺點,不利於近年來高熱發散化或信號傳達高速化 之封裝體需求。在熱發散或高速信號傳達這一點,擁有高 導電性之銅合金是較有利的,其可設計出更高性能之封I 體。 ’ 但是,在前述之氧化膜密合性上,由於銅合金比以― Ni合金差,所以易於樹脂與晶片銲墊間產生剝離,且容易 發生封裝體龜裂或剝離之問題。因此為了製造可靠性高之 封裝體而有必要開發氧化膜密合性高之銅合金。 除上述之外,對於引線框材料之性能另有如下之需 求。首先,由於封裝體薄型化之需求,引線框材料乃須: 薄,結果遂使最近板厚在0.15刪、〇·125咖這類薄型材料成 為主流。而,引線框如此之薄型化與狹小化則導致框架 體或引線韌性之下降’而於裝配程序中引起内部引線 形’或於安裝裝置時引起外界引線變形。為了防止這樣… 麻煩,所使用之引線框材料乃須為具有更高強度者。除: 之外並要求,在引線框形成圖樣時必須具有優良之_ 及加壓加工性,更且安裝後之焊接部可靠性須高 各種特性。 ' ° 承上’本發明之目的係在提供—種鋼合金引線框及 裝 全 變 的 性等 用 頁 訂 本紙張尺度適财關家標準(CNS )峨格(21()x2974\f -6- 541677 五、發明説明(4 ) 於該種引線框而具有新穎極表層構造之銅合金,該銅合金 引線框不但可提高氧化膜密合性,以解決封裝體龜裂或剝 • 抽衣-- f請先閱讀背t之注意事項再填寫本頁〕 離之問題,且可提高封裝體之熱發散性及動作速度等。 為此,本案發明人等乃特別深入研究關於未施以研磨 等氧化膜除去處理之銅合金的氧化膜密合性與母材極表面 結晶方位之關係,並驚㈣發現,可以控制銅合金極表層 之結晶方位來提高氧化膜之密合性。以下以具體方法描述 之。 本發明之銅合金引線框,其以XRD薄膜法評價所得之 極表面結晶方位,係以{ 100丨峰強度相對於{ m}峰強 度比在0.04以下來提高氧化膜密合性。該引線框可適用於 以樹脂封裝之所有引線框,尤其適用於樹脂封裝前於接合 半導體晶片之面上施有貴金屬或鎳等鍍層者。 經濟部智慧財產局員工消費合作社印製 又銅合金可使用引線框用之所有銅合金,而本發明特 徵所在之結晶方位則以粒子分散型與沈澱硬化型等各種成 分系之銅合金特別容易達成。而特別理想之銅合金,則包 含有以下數種,即:以質量比而言,含Cr: 0 04〜04%Y Zr: 0.03〜0·25〇/。、及Ζη: 0·06〜2·0%,而剩餘部分則為cu 與不可避免之不純物質(以下剩餘部分皆同)者;以質量 比而言,含 Cr ·· 0.04〜0.4%、Zr : 〇.〇3〜〇 25%、及 & ·· 〇 % 〜2.0%,進而並含有總量在〇〇1〜1〇%之由见、%、以、 Μη、P、Mg及Si所構成之群中選出之丨或2種以上者;以質 量比而言,含Cr:〇.〇4〜0·4%、ΖΓ:0·〇3〜〇·25%、Ζη··〇〇6 量比 〜2.0%、Fe : 〇·1 〜1·8%&Τί : 〇」〜〇 8% ;及以質 本紙張尺ϋϋ國國家標準(CNS ) Α4規格(21()><297公餐- 541677 五、發明説明(: 而言’含 Cr : 0.04〜0.4%、Zr : 0.03 〜0.25%、Zn : 0.06〜 2·0%、Fe : 0·1〜1·8%、Ti ·· 〇」〜〇·8%,進而並含有總量 在0.01〜1.0%之由Ni、Sii、In、Μη、Ρ、Mg及Si所構成之 群中選出之1或2種以上者。 裝 另外’所謂以XRD ( X-ray diffraction )評價所得之引 線框極表層之結晶方位者,舉例言之,係於理學電氣(株) 製之X線繞射裝置RINT2000上,使用c〇燈泡,使2Θ掃描面 垂直於試料,並將壓延方向(RD)包含其中,且使χ線之 入射角(α )相對於試料面以5。角射入(第丨圖),再分 別求出以2Θ掃描檢測出之丨uu面積分強度與{2〇〇丨面 之繞射線峰值積分強度,再算出其等之比值而加以評價者。 訂 一般之X線繞射測定法係如第2圖所示,試料其χ線之入 射角係與反射肖係相對於試料面維持相#之關係。因此, 在貫際之裝置上乃將χ線發生源之燈泡固定住,當試料面相 2於入射線呈Θ之角度時,計數器與試料面之旋轉將使計數 器相對於入射線呈2Θ之角度試料一起。此時,以一般之方 方法而言,測定對象面是經常平行於試料面的。而薄膜法 由於入射角固定,為了與0區分,則以α表示之,關於2卟 則指相對於入射線之計數器位置,由於與一般方法相同, 、相同付唬不之。但是,此時與一般方法相異者,如第3 圖所示,由於測定對象面呈入射角與反射角為同一角度χ 之面,故與2Θ同時變化,為不與試料面平行之面。 由於極表層受到壓延用札報之強力摩擦,故結晶方位 ”内口Ρ相異’因此’為了評價極表層之結晶方位必須以上 :紙張尺度適用 -8- 541677 A7 B7 五、發明説明(6 述之薄膜法進行X線繞射分析。 關於銅合金壓延之結晶方位,以往即知(i 10) 12] 為主要之壓延方位,(Progress in Metal Physics,1By BruceV. Explanation of the invention (2) ^ It also has good wettability. When the external leads are held during the trimming step, the hardness must be increased without generating solder chips, and the Sn concentration should be 80 ~ 90wt%. The biggest issue concerning the reliability of these packages is the problem of cracking or peeling of the packages produced by the surface knitwear. The mechanism of package peeling is that after the semiconductor package is constructed, the resin and the wafer pad (the part on which the semiconductor chip is placed on the lead frame) have low adhesion, which is caused by thermal stress during subsequent heat treatment. The occurrence of package cracking is as follows. After the semiconductor package is constituted, the mold (mold) tree is called S and the atmosphere is collected, and then the water is evaporated due to heating during surface mounting. If there is a crack in the package, water vapor will be peeled off by pressure. Surface and constitute an internal pressure effect. The internal pressure swells the package, and the resin cannot withstand the internal pressure, which causes cracks. If the package after surface mounting produces turtles, moisture or impurities will invade and rot | insect chips, resulting in damage to semiconductor functions. In addition, due to the expansion of the package, the appearance is not good and the product value is lost. The problem of cracking or peeling of such packages has become more and more significant in recent years with the progress of thinner packages. Here, the problem of cracking or peeling of the package is caused by the poor adhesion between the resin and the wafer pad, and the one that most affects the adhesion between the resin and the wafer pad is an oxide film formed on the surface of the base material. The oxide film is formed before the resin package because the lead frame base material undergoes several heating procedures such as wafer bonding or wire bonding during the package assembly step, and has a thickness of several tens to several hundreds of nm. Since the surface of the wafer pad is connected by the lead frame base material and the lead frame through the oxide film, the adhesion between the hafnium oxide film and the lead frame base material will be close to the resin and the lead frame base material. Cause significant impact. This paper size applies to Chinese Wii ^ TcNS) A4 specification 541677 A7 V. Description of the invention (In addition, the materials for lead frames use Fe-Ni-based alloys and copper alloys represented by 42% Ni-Fe alloys. Because 42% Ni- The thermal expansion coefficient of Fe alloys is similar to that of ceramics, so it has been used as a ceramic packaging material, and the same% is also used as a highly reliable lead frame material in plastic packaging. However, the Fe-Qin system Compared with alloys, alloys have the disadvantage of low electrical conductivity, which is not conducive to the demand for packages with high heat dissipation or high-speed signal transmission in recent years. In terms of heat dissipation or high-speed signal transmission, copper alloys with high conductivity are more advantageous. It can be designed with a higher performance seal body. 'However, in terms of the adhesion of the aforementioned oxide film, since the copper alloy is inferior to the ―Ni alloy, it is easy to cause peeling between the resin and the wafer pad, and it is easy The problem of package cracking or peeling occurs. Therefore, it is necessary to develop a copper alloy with high oxide film adhesion in order to produce a highly reliable package. In addition to the above, for leads There are other requirements for the properties of the material. First, due to the thinning of the package, the lead frame material must be thin. As a result, the recent thickness of the thin materials such as 0.15 and 0.25 mm has become mainstream. And, Such thinness and narrowness of the lead frame lead to a decrease in the toughness of the frame body or the lead, and cause an internal lead shape during the assembly process or external lead deformation when the device is installed. To prevent this ... trouble, the lead frame used The material must be of higher strength. In addition to: and in addition, the lead frame must have good quality and press workability when forming patterns, and the reliability of the welded part after installation must be high. The purpose of the present invention is to provide—a kind of steel alloy lead frame and a fully modified sheet of paper. The paper size is suitable for financial standards (CNS) Ege (21 () x2974 \ f -6- 541677 5 4. Description of the invention (4) In this kind of lead frame, a copper alloy with a novel polar surface structure, the copper alloy lead frame can not only improve the adhesion of the oxide film to solve the cracking or peeling of the package. Please read the precautions before filling in this page.] This problem can improve the heat dissipation and operating speed of the package. For this reason, the inventors of this case have made in-depth research on the removal of oxide films without polishing. The relationship between the oxide film adhesion of the treated copper alloy and the crystal orientation of the base material electrode surface was surprisingly found that the crystal orientation of the surface layer of the copper alloy electrode can be controlled to improve the adhesion of the oxide film. The specific method is described below. The copper alloy lead frame of the present invention uses the XRD film method to evaluate the crystallographic orientation of the polar surface, and improves the adhesion of the oxide film with a ratio of {100 丨 peak intensity to {m} peak intensity of 0.04 or less. The lead frame It can be applied to all lead frames packaged with resin, especially those coated with precious metal or nickel on the surface of the semiconductor wafer before resin packaging. All copper alloys used for lead frames can be printed on copper alloys printed by employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the crystal orientation of the features of the present invention is particularly easy to achieve with copper alloys of various composition systems such as particle dispersion type and Shen hardening type. . The particularly desirable copper alloy contains the following types, that is, in terms of mass ratio, it contains Cr: 0 04 ~ 04% Y Zr: 0.03 ~ 0 · 25〇 /. , And Zη: 0 · 06 ~ 2 · 0%, and the remaining part is cu and unavoidable impurities (the remaining parts are the same below); in terms of mass ratio, it contains Cr ·· 0.04 ~ 0.4%, Zr : 〇03 ~ 〇25%, and & · 〇% ~ 2.0%, and further contains the total amount of 001 ~ 10% by see,% ,,, Mn, P, Mg and Si One or two or more selected from the constituent group; in terms of mass ratio, it contains Cr: 0.04 to 0.4%, ZΓ: 0.03 to 0.025%, and Zη..〇〇6 Amount ratio to 2.0%, Fe: 〇.1 to 1.8% & Τ: 〇 ″ to 〇8%; and the national standard (CNS) Α4 specification (21 () > < 297 Meal-541677 V. Description of the Invention (: In terms of 'Cr: 0.04 ~ 0.4%, Zr: 0.03 ~ 0.25%, Zn: 0.06 ~ 2.0%, Fe: 0.1 ~ 1.8%, Ti 〇 ″ ~ 〇 · 8%, and further contains one or two or more selected from the group consisting of Ni, Sii, In, Mn, P, Mg, and Si in a total amount of 0.01 to 1.0%. In addition, the so-called crystal orientation of the surface layer of the lead frame obtained by X-ray diffraction (X-ray diffraction) evaluation is, for example, related to science On the X-ray diffraction device RINT2000 made by Electric Co., Ltd., using a C0 bulb, the 2Θ scanning surface is perpendicular to the sample, and the rolling direction (RD) is included, so that the incidence angle (α) of the χ line is relative to the sample. The surface is projected at an angle of 5. (Figure 丨), and then the area intensity of the uu area detected by the 2Θ scan and the peak integrated intensity of the ray peak around the surface of {2〇〇 丨 are calculated, and the ratio is calculated and added. Evaluator. The general X-ray diffraction measurement method is shown in Figure 2. The relationship between the incident angle of the X-ray and the reflection angle of the sample is maintained in phase # with respect to the sample surface. It is to fix the bulb of the χ-ray source. When the sample surface phase 2 is at an angle of Θ to the incident ray, the rotation of the counter and the sample surface will make the counter sample at an angle of 2Θ to the incident ray. At this time, in general, In terms of the method, the measurement target surface is often parallel to the sample surface. The thin film method, because the incident angle is fixed, is expressed as α in order to distinguish it from 0, and 2 porphyries refer to the position of the counter relative to the incident ray. The general method is the same It is not bluffing. However, at this time, if it is different from the general method, as shown in Figure 3, the measurement target surface is a surface with the incident angle and the reflection angle at the same angle χ, so it changes at the same time as 2Θ, which is not the same as the sample. The surface is parallel to the surface. Because the polar surface is strongly rubbed by the calendar, the crystal orientation "inside mouth P is different. Therefore, in order to evaluate the crystal surface of the polar surface, the orientation must be more than the following: paper scale applies -8- 541677 A7 B7 V. DESCRIPTION OF THE INVENTION The thin film method described in (6) performs X-ray diffraction analysis. Regarding the crystal orientation of rolling of copper alloys, (i 10) 12] is the main rolling orientation, (Progress in Metal Physics, 1By Bruce

Chalmers,1949、第 297頁)。 近年來在更精密的測定下,則可見到(123 ) [U^] + (146 ) [21 i ]之顯示方式(η Huand s.Goodman : ,( 627 ))。這些測定結果均 疋以X線穿透至表面以下數十μιη所獲得者,雖可知此間總 體之大概平均性質,但有關於表面丨μη1左右之極表層結晶 方位之研究,及該方位與氧化膜密合性之關係之研究,以 及有關於表層之結晶方位者,迄今則尚未有發現。 另外’為得到上述之結晶方位,一般所知只要將20〜 80%加工程序中所進行之最終冷壓之壓延條件加以控制即 可。換言之’當導入軋輥與材料間之壓延油其油膜厚度加 厚時’{ 100 }峰強度將變低。因此,若壓延條件係以冷壓 最終軋道之軋輥徑在1〇〇腿以上,壓延速度在2〇〇m/min以 上’壓延油黏度在5cst以上(即〇.〇5cm2/s以上),則{ 100 } 峰強度相對於{ 111 }峰強度之比將在〇 〇4以下。 以上’主要是在說明作成半導體封裝體之引線框時之 用迷’但在其他省略母材研磨等處理而直接施以表面保護 膜之用途上,亦可使用本發明之合金。 以下即說明本發明理想之銅合金組成。在說明中,百 分率係指質量%。Chalmers, 1949, p. 297). In recent years, under more precise measurement, the display mode of (123) [U ^] + (146) [21i] can be seen (η Huand s. Goodman:, (627)). These measurement results are obtained by X-rays penetrating to tens of μm below the surface. Although the general average properties are known here, there are studies on the surface crystalline orientation of the polar surface around μη1, and the orientation and oxide film. The research on the relationship of closeness and the crystal orientation of the surface layer have not been found so far. In addition, in order to obtain the above-mentioned crystal orientation, it is generally known that the rolling conditions for the final cold pressing performed in the 20 to 80% processing procedure may be controlled. In other words, "when the rolling oil introduced between the roll and the material has a thicker oil film thickness", the {100} peak intensity becomes low. Therefore, if the rolling conditions are such that the roll diameter of the final cold rolling pass is above 100 legs and the rolling speed is above 2000 m / min, the rolling oil viscosity is above 5 cst (that is, above 0.05 cm2 / s), Then the ratio of the {100} peak intensity to the {111} peak intensity will be below 0.004. The above "is mainly used to explain the use of the lead frame of a semiconductor package", but the alloy of the present invention can also be used for other applications in which a surface protective film is directly omitted in the process of omitting the base material polishing and the like. The ideal copper alloy composition of the present invention is described below. In the description, percentage means mass%.

Cr係可於合金經固溶處理後,藉時效處理而析出母材 (請先閲讀背面之注意事項再填寫本頁) -裝·Cr series can precipitate the base material after aging treatment after the solution treatment of the alloy (please read the precautions on the back before filling this page) -pack ·

、1T 經濟部智慧財產局員工消費合作社印製Printed by 1T Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs

541677 五、發明説明(7 ) 中,而具有提高強度之作料,但若其含量未滿〇〇4%則 此作用將無法達到希望之效果,反之,若含量超過〇·4% , 則製品化後將於母材中殘留粗大之Cr,結果將使蝕刻性劣 化。依據如上之理由則理想之Q含量為0 〇4〜〇 4%。541677 5. In the description of the invention (7), a material with enhanced strength, but if its content is less than 0.004%, this effect will not achieve the desired effect. On the contrary, if the content exceeds 0.4%, the product will be manufactured. After that, coarse Cr will remain in the base material, and as a result, the etching properties will be deteriorated. For the above reasons, the ideal Q content is from 0.4 to 0.4%.

Zr係可經打效處理而與銅形成化合物析出於母材中而 具有強化作用者,若其含量未滿〇〇3%則無法達到前述作 用所希望之效果。反之,若Zr含量超過〇25%,則固溶處 理後,粗大未固溶之&將殘留於母材中,導致蝕刻性下降。 因此理想之Zr含量為〇.〇3〜0.25%。The Zr system can be strengthened by precipitating the copper-forming compound into the base material after the effect treatment. If the content is less than 0.003%, the desired effect of the aforementioned effect cannot be achieved. On the other hand, if the Zr content exceeds 0.25%, after solution treatment, coarse & unsolved & will remain in the base material, resulting in a decrease in etching properties. Therefore, the ideal Zr content is from 0.03 to 0.25%.

Zn係為了提高銲藥之耐熱剝離性與氧化膜之密合性 而添加之成分,若其含量未滿〇〇6%,則無法達到前述作 用所希望之效果,反之,若Zn之添加超過2〇%則將使導電 率下降。因此,理想之211含量為〇〇6〜2〇%。 Τι及Fe係可於合金經時效處理時於母材中形成了丨及以 之金屬互化物,而更進一步提高合金之強度者,必要時可 添加之以發揮該作用,但,若其含量分別未滿〇〇1%則無 法達到上述作用所希望之強度。反之,若Ti含量超過〇8 % 經濟部智慧財產局員工消費合作社印製 而Fe含量超過1·80%時,則將殘留以丁丨及卜為主要成分之 粗大包合體,並將嚴重阻礙蝕刻性。因此,理想之Ti含量 為0.1〜0.8%,而理想之Fe含量為〇 1〜1 。Zn is a component added in order to improve the heat-resistant peeling resistance of the solder and the adhesion of the oxide film. If the content is less than 0.006%, the desired effect of the aforementioned action cannot be achieved. Conversely, if the addition of Zn exceeds 2 〇% will reduce the conductivity. Therefore, the ideal 211 content is from 006 to 20%. Ti and Fe can form intermetallic compounds in the base metal when the alloy is aging treated, and further increase the strength of the alloy, if necessary, can be added to play this role, but if the content of Below 0.001%, the desired intensity of the above-mentioned effect cannot be achieved. Conversely, if the Ti content exceeds 08% and is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Fe content exceeds 1.80%, coarse inclusions with Ding and Bu as the main components will remain, which will seriously hinder etching. Sex. Therefore, the ideal Ti content is 0.1 to 0.8%, and the ideal Fe content is 0.01 to 1.

Ni、Sn、In、Μη、P、Mg、及Si之作用則如下述。這 些成分皆具有主要可藉固溶強化作用以提高強度卻不使合 金之導電性降低太大之作用,因此可依需要添加丨種或2種 以上’若其總含量未滿0·〇 1 %則無法達到前述作用所希望 -10- 541677 A7 B7 五、發明説明( 之效果,反之,若總量超過1.0%時則合金之導電率將明顯 降低。因此,單獨添加或2種以上複合添加之Ni、§n、In、 Μη、P、Mg、及Si其理想之總含量為0.01〜ί ο%。 其次,將以於理想組成範圍中之實施例具體說明本發 明之效果。 首先,以電解銅(Cu)或無氧銅(Cu)為主原料,以 銅鉻母合金、銅錯母合金、鋅、鈦、軟鋼、鎳、錫、鋼、 猛、鎂、矽、銅磷母合金為副原料,在高周波熔解爐裡將 表1、3所示各種成分組成之銅合金於真空或氬氣中溶解, 鑄造成厚度30麵之鑄塊。其次,將各鑄塊依序進行熱加工 及固溶處理、弟1次之冷壓、時效處理、表1、3所示條件之 最終冷壓(加工度50%)、消除應力退火之處理,而做成 厚度為0 · 15醒之極板。 以下敘述評價方法。首先,利用X線繞射裝置將製成 之各極板之結晶方位以上述方法評價之。其次,以黏膠片 剝離測試評價氧化膜之密合性。又,由各極板切下2〇χ5〇 腿之試片,在大氣中預定溫度下加熱5分鐘後,於產生氧化 膜之試片表面貼上市售之黏膠片(商品名:3M#851)後 剝下。此時,加熱溫度係以2(TC之刻度變化,並求出氧化 膜剝離時之最低溫度,即視之為氧化膜剝離溫度。另外, 強度係以拉伸測試來測定拉伸強度,而導電性則係以求取 導電率而行之。 表3、4係顯示其評價結果。如表中所示,本實施例獲 得到良好之氧化膜密合性,反之,各比較例則由於不適當 (請先閱讀背面之注意事項再填寫本頁} -裝, -訂 經濟部智慧財產局員工消費合作社印製The effects of Ni, Sn, In, Mn, P, Mg, and Si are as follows. These ingredients all have the effect of improving strength by solid solution strengthening without reducing the conductivity of the alloy too much. Therefore, one or two or more kinds can be added as needed, if the total content is less than 0.01% It is impossible to achieve the hope of the aforementioned action -10- 541677 A7 B7 V. Effect of the invention (Conversely, if the total amount exceeds 1.0%, the electrical conductivity of the alloy will be significantly reduced. Therefore, if it is added alone or in combination of two or more kinds, The ideal total content of Ni, §n, In, Mn, P, Mg, and Si is 0.01 to 8%. Second, the effect of the present invention will be specifically described with examples in the ideal composition range. First, electrolysis Copper (Cu) or oxygen-free copper (Cu) is the main raw material, and the copper-chromium master alloy, copper copper master alloy, zinc, titanium, mild steel, nickel, tin, steel, magnesium, magnesium, silicon, and copper-phosphorus master alloy are used as auxiliary materials. In the high-frequency melting furnace, the copper alloys with various components shown in Tables 1 and 3 are dissolved in vacuum or argon to cast into 30-thick ingots. Next, each ingot is sequentially hot-processed and solidified. Solution treatment, cold pressing once, aging treatment, Tables 1 and 3 The final cold pressing (processing degree 50%) and stress-relieving annealing under the conditions shown below are used to make the electrode plate with a thickness of 0 · 15. The evaluation method is described below. First, each X-ray diffraction device is used to produce each electrode. The crystal orientation of the plates was evaluated by the method described above. Secondly, the adhesion of the oxide film was evaluated by the adhesive sheet peel test. In addition, a 20 × 50 leg test piece was cut from each plate and heated at a predetermined temperature in the atmosphere. After 5 minutes, a commercially available adhesive sheet (trade name: 3M # 851) was attached to the surface of the test piece that produced the oxide film and peeled off. At this time, the heating temperature was changed by 2 (TC scale, and the oxide film was peeled off. The lowest temperature at this time is regarded as the peeling temperature of the oxide film. In addition, the tensile strength is measured by a tensile test, and the conductivity is determined by determining the conductivity. Tables 3 and 4 show the evaluations. Results. As shown in the table, this example obtained good adhesion of the oxide film, otherwise, each comparative example was inappropriate (please read the precautions on the back before filling out this page)-Install,-Order the Ministry of Economic Affairs Printed by the Intellectual Property Bureau Staff Consumer Cooperative

541677 A7 B7 五、發明説明(9 ) 之壓延條件而使極表層之{ 100 }方位脫離正確範圍,致氧 化膜之密合性不良。 (請先閲讀背面之注意事 ΙΦ 項再填- 裝-- :寫本頁)541677 A7 B7 V. Description of the invention (9) The rolling direction of the electrode surface leaves the {100} orientation out of the correct range, resulting in poor adhesion of the oxide film. (Please read the note on the back first, then fill in-Pack-: Write this page)

、1T 經濟部智慧財產局員工消費合作社印製 -12- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X 297公釐) 541677 A7 B7、 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -12- This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 541677 A7 B7

五、發明説明(1G 經濟部智慧財產局員工消費合作社印製 ^*4 Λ.) «**·« 4 5:埏 〇也 [0,026 f f 0.0411 1 0,023 I ! 0.049 1 [〇.〇 π 1 L α_ I ί. 0.023 ! 0.044 ! 1 最終冷堅條件 空延油黏度 (cm%) Γ 0.12 1 I ojs | «2 5 1 0.20 ! I CU8 | L——掘ι」 d 3 d : (m/min} o ia SM 8 «〇 0 «5 Ο 一 g C0 ο ο & 〇 g Γ、:Χ·^^ί、 (mm) § 〇 ο <£> 0 φ P-4 Ο 2 s ^-4 i 化學成分(d J Cu* 不純物 窃r s® 念, 續. h}: Ψ:\ « * t * 、 * 貪 ♦ » s * * - * * * * 0^4 § Ο 〇 〇 • * * ♦ ♦ s: • * ;〇 0Ϊ :***« ;ο: * * * m * * 0.66 l〇,63j I 0.85 1 o^j * * Z * ¢0 00 <NI «5 mi οι g >5 0« «0 聿 4 m * ‘ ♦ * ¢0 <N 〇 cn ο iS PM yn m * * * p * * n 0‘24 0*25 ♦ 0M ύΜ 0,19 2 d N * * * * * * * ♦ 〇 • ♦ • * 0J3 z 本裘施例i It較例1 笨実施例2 1比校例2 j 1本実施例3 j tmm 3 本実繪014 1比較例4 1 U) _«|;念>«$,¥举命槪菌^^S | VUdKOc) 1 CO ω m — CO CO <〇 m m m CO — <0 CO 卜 !co :co Φ CO 05 in |導電率(%IACS) ! φ <D m o υύ 00 ¢0 to CO <0 CO |拉伸強度(MP aj | | 5 30 1 o 1£5 O | 7 3 0 | o to | 8 50 1 1 5 7 0 | 5 8 0 1 m I I ujm i <M CO CO 養 rt I m ! 本涵例 m 1 (請先閲讀背面之注意事 1· >項再填· 裝-- :寫本頁) 、1Τ 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) -13- 541677 A7 B7 五、發明説明(11 ) 經濟部智慧財產局員工消費合作社印製 1# *ί> 1 〇 o: 1 O 1 0 1 m l 卜 ο ο 1 :!: o η ο z c> o s Q o i Q O :ίΜ; 5 d «ο τ d 1 o W 、/ ® 8 ο s o 1 n O a 〇 n O :2: :S: 8 21 o S «J 5 2 d 丨辦 s 2 o s o s o 5”| 1 i 1 1 % 1 1 1 i 1 i i 1 義 % m^k. 1 ;;1 L ^ :: S 一 i 8 2 u s a 3 s 5 S a n pm % i :㈣ 8 '·〇 c*\ 、〆\ Φ -W r/<k v、· jJ .: 4 yy 沒 e: 'r 矽 '<3 毖 1 I ! 1 ! i i I 2 O I 1 1 1 2: d I I i Μ 1 I 1 I 1 i S O* i I 1 ί 1 ί 1 i ί a* I ! 1 f 1 § <s 1 I i I i S c> i i 1 I f I 1 I S <» 1 1 ! 翁 1 S d 1 ί 1 8 o ί <ύ I 1 1 答 o i 1 1 1 I S i i ! 1 ! ί 2 1 1 2 d f I Ϊ ί i ί I I 1 i 1 1 ί m l §1 O i I ! i 1 1 窗 \ ! f \ 1 \ 1 I i i \ I f l 1 : ο d s d i S d ! ! ? ci I i i 1 ί 1 I I i 涝 ci <M! S d | f I s d 2 d § o a O m"*. m o Ά O n d % d ▼ d 1 ο c* 〇 d s d n O s d s? <5: ώ m4.. d n O 〇 2 2 c> 8 O o 3 5 2 o 1 〇· 2 S 3 s o 2 0 i 1 i Ά o n d 2、 d SI <s 弩 O i a d 1 2 d 约 o <s 2 o a O <〇 卜 <〇 m 丨2 — 2 2 s 2 S vs <0 卜 妹滅壤s u»m (請先閱讀背面之注意事 1♦ _項再填. 裝— :寫本頁) 訂_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -14- 541677 A7 B7 五、發明説明(12 ) 經濟部智慧財產局員工消費合作社印製 氧化膜密合性及特性之評價結果(2) No· 拉伸強度 (Mpa) 導電率 (%IACS) 氡化膜剝離溫度 (K) 本 実 施 例 5 580 80 673 6 620 76 673 7 610 77 673 8 590 W 693 9 580 81 673 10 580 77 693 11 590 80 693 1 12 590 79 693 13 680 71 673 14 700 68 693 15 720 69 673 16 680 65 693 17 690 66 673 比 較 例 6 580 81 633 6 590 77 653 t 690 68 653 (請先閱讀背面之注意事項再填寫本頁) 裝_V. Description of the invention (printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ * 4 Λ.) «** ·« 4 5: 埏 〇 也 [0,026 ff 0.0411 1 0,023 I! 0.049 1 [〇.〇π 1 L α_ I ί. 0.023! 0.044! 1 Viscosity (cm%) of oil in the final cold-hardened condition Γ 0.12 1 I ojs | «2 5 1 0.20! I CU8 | L——digm” d 3 d: (m / min } o ia SM 8 «〇0« 5 Ο one g C0 ο ο & 〇g Γ ,: χ · ^^ ί, (mm) § 〇ο < £ > 0 φ P-4 Ο 2 s ^- 4 i Chemical composition (d J Cu * Impurities steal rs®, continued. H): Ψ: \ «* t *, * greed ♦» s * *-* * * * 0 ^ 4 § Ο 〇〇 • * * ♦ ♦ s: • *; 〇0Ϊ: *** «; ο: * * * m * * 0.66 l〇, 63j I 0.85 1 o ^ j * * Z * ¢ 0 00 < NI« 5 mi οι g > 5 0 «« 0 聿 4 m * '♦ * ¢ 0 < N 〇cn ο iS PM yn m * * * p * * n 0'24 0 * 25 ♦ 0M ύΜ 0,19 2 d N * * * * * * * ♦ 〇 • ♦ • * 0J3 z Example of this item i It is comparative example 1 Stupid example 2 1 Comparison example 2 j 1 This example is 3 j tmm 3 This figure 014 1 Comparative example 4 1 U) _ «| ;; >« $, ¥ lifting槪 菌 ^^ S | VUdKOc) 1 CO ω m — CO CO < 〇mmm CO — < 0 CO Bu! Co: co Φ CO 05 in | Conductivity (% IACS)! Φ < D mo υύ 00 ¢ 0 to CO < 0 CO | Tensile strength (MP aj | | 5 30 1 o 1 £ 5 O | 7 3 0 | o to | 8 50 1 1 5 7 0 | 5 8 0 1 m II ujm i < M CO CO Support rt I m! This example m 1 (please read the notes on the back 1 > then fill in and install-: write this page), 1T This paper size applies Chinese National Standard (CNS) Α4 Specifications (210X297 mm) -13- 541677 A7 B7 V. Description of the invention (11) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 # * ί > 1 〇o: 1 O 1 0 1 ml Bu ο ο 1: : O η ο z c > os Q oi QO: ίΜ; 5 d «ο τ d 1 o W, / ® 8 ο so 1 n O a 〇n O: 2:: S: 8 21 o S« J 5 2 d 丨 to do s 2 ososo 5 ”| 1 i 1 1% 1 1 1 i 1 ii 1 meaning% m ^ k. 1;; 1 L ^ :: S-i 8 2 usa 3 s 5 S an pm% i: ㈣ 8 '· 〇c * \, 〆 \ Φ -W r / < kv, · jJ.: 4 yy No e:' r silicon '< 3 毖 1 I! 1! Ii I 2 OI 1 1 1 2 : d II i Μ 1 I 1 I 1 i SO * i I 1 ί 1 ί 1 i til a * I! 1 f 1 § < s 1 I i I i S c > ii 1 I f I 1 IS < »1 1! 翁 1 S d 1 ί 1 8 o ί < ύ I 1 1 answer oi 1 1 1 IS ii! 1! ί 2 1 1 2 df I Ϊ ί i ί II 1 i 1 1 ί ml §1 O i I! i 1 1 window \ ! f \ 1 \ 1 I ii \ I fl 1: ο dsdi S d!!? ci I ii 1 ί 1 II i flood ci < M! S d | f I sd 2 d § oa O m " *. mo Ά O nd% d ▼ d 1 ο c * 〇dsdn O sds? ≪ 5: FREE m4 .. dn O 〇2 2 c > 8 O o 3 5 2 o 1 〇 · 2 S 3 so 2 0 i 1 i Ά ond 2, d SI < s crossbow O iad 1 2 d about o < s 2 oa O < 〇 卜 < 〇m 丨 2 — 2 2 s 2 S vs < 0 (Please read the note on the back 1) _ items and then fill in. Pack —: write this page) Order _ This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) -14- 541677 A7 B7 V. Description of the invention (12) Evaluation results of the adhesion and characteristics of the oxide film printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (2) No · Tensile strength (Mpa) Electrical conductivity (% IACS) (K) Example 5 580 80 673 6 620 76 673 7 610 77 673 8 590 W 693 9 580 81 673 10 580 77 693 11 590 80 693 1 12 590 79 693 13 680 71 673 14 700 68 693 15 720 69 673 16 680 65 693 17 690 66 673 Comparative Example 6 580 81 633 6 590 77 653 t 690 68 653 (Please read the precautions on the back before filling this page)

、1T 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -15- 541677、 1T This paper size is applicable to China National Standard (CNS) A4 specification (210 × 297 mm) -15- 541677

、發明説明(13 如以上之說明,相較於42合金,藉由本發明之銅合金 可大為提升半導體封裝體之熱發散性及高速動作性,更可 精由氧化膜密合性之提高而抑止封裝體可靠性之下降。 以下為圖式之簡單說明。 第1圖係極表層評價方法之說明圖。 第2圖係一般法之χ線繞射法說明圖。 第3圖係薄膜法之χ線繞射法說明圖。 --------装------訂 :· (請先閱讀背面之注意事項存填寫本頁)3. Description of the invention (13 As explained above, compared with 42 alloy, the copper alloy of the present invention can greatly improve the heat dissipation and high-speed operation of the semiconductor package, and it can be improved by the improvement of the adhesion of the oxide film. Suppress the decline of package reliability. The following is a brief description of the diagram. Figure 1 is an explanatory diagram of the evaluation method of the polar surface layer. Figure 2 is an explanatory diagram of the χ-ray diffraction method of the general method. Figure 3 is of the thin film method X-ray diffraction method illustration. -------- install ------ order: (Please read the precautions on the back and save this page)

經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) M規格(210χ297公釐) -16»Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) M specification (210x297 mm) -16 »

Claims (1)

541677 本 A BCD 92. 3. 〇3 申請專利範圍 第090104583號專利申請案申請專利範圍修正本 修正曰期:92年3月 1 · 一種銅合金引線框,係以銅合金引線框母材經樹脂封裝 而成’而,該銅合金引線框母材則為其極表層經XRD薄 膜法評價得到以下值,即,其{ 1 〇〇 }峰強度相對於構 成該極表層之銅合金結晶之{ 111 }峰強度比係在〇〇4 以下者。 2 ·如申请專利範圍第1項之銅合金引線框,其係包含有樹 脂封裝部及鍍有金屬之外引線部,而該樹脂封裝部則為 母材極表層具有前述0.04以下之峰強度比者。 3·如申請專利範圍第1或2項之銅合金引線框,其中該鋼合 金以質量比而言係含有,Cr : 0.04〜0.4%、Zr : 〇.〇3〜 0.25%、及Zn ·· 0.06〜2.0%,而剩餘部分則為Cu與不可 避免之不純物質。 4. 如申請專利範圍第1或2項之銅合金引線框,其中該銅合 金以質量比而言係含有,Cr : 0.04〜0.4%、Zr : 〇.〇3〜 〇·25%、及Zn: 0.06〜2.0%,進而並含有總量〇〇1〜1() %之由Ni、Sn、In、Μη、P、Mg、及Si所構成之群中選 出之1或2種以上者,而剩餘部分則為Cu與不可避免之不 純物質。 5. 如申請專利範圍第丨或2項之銅合金引線框,其中該銅合 金以質量比而言係含有,Cr : 〇〇4〜〇 4%、Zr : 〇们〜 0.25%、Zn ·· 〇·〇6〜2.0%、Fe : 0.1 〜ι·8%、及丁i : 〇」 〜〇·8%,而剩餘部分則為(::11與不可避免之不純物質。541677 This A BCD 92. 3. 〇 Patent Application No. 090104583 Patent Application Amendment of Patent Scope Amendment Date: March 1992 1 · A copper alloy lead frame is made of copper alloy lead frame Encapsulated and the copper alloy leadframe base material was evaluated by XRD thin film method to obtain the following values, that is, its {1 00} peak intensity is relative to the {111 } The peak intensity ratio is below 0.004. 2 · If the copper alloy lead frame of item 1 of the patent application scope includes a resin encapsulation portion and a lead portion other than metal plating, and the resin encapsulation portion is the base material, the surface layer has the peak intensity ratio of 0.04 or less By. 3. The copper alloy lead frame according to item 1 or 2 of the scope of patent application, wherein the steel alloy is contained in terms of mass ratio, Cr: 0.04 to 0.4%, Zr: 0.03 to 0.25%, and Zn ... 0.06 ~ 2.0%, and the rest is Cu and unavoidable impurities. 4. For the copper alloy lead frame of item 1 or 2 of the patent application scope, wherein the copper alloy is contained in terms of mass ratio, Cr: 0.04 ~ 0.4%, Zr: 〇.〇3〜 〇.25%, and Zn : 0.06 to 2.0%, and further containing one or two or more selected from the group consisting of Ni, Sn, In, Mn, P, Mg, and Si in a total amount of 0.01 to 1 ()%, and The remainder is Cu and unavoidable impurities. 5. For the copper alloy lead frame of item 丨 or 2 of the scope of patent application, wherein the copper alloy is contained in terms of mass ratio, Cr: 〇〇4〜〇4%, Zr: 〇〇 ~ 0.25%, Zn ·· 〇.〇6 ~ 2.0%, Fe: 0.1 ~ ι · 8%, and Ding: 〇 ″ ~ 〇 · 8%, and the rest are (:: 11 and unavoidable impurities. 裝 訂 *17-Staple * 17- 士申W專利範圍第丨或2項之銅合金引線框,其中該銅合 i以質量比而言係含有,Cr : 〇.〇4〜0.4%、Zr : 0.03〜 〇·25%、Zn : 〇.〇6〜2.0%、Fe : 〇·ι 〜1.8%、及Ti : 〇」 0-8%’進而並含有總量為〇〇1〜1.〇%之由1^、311、111、 Mn、P、Mg、及si所構成之群中選出之1或2種以上者, 而剩餘部分則為Cu與不可避免之不純物質。 •一種銅合金,該銅合金以質量比而言係含有,Cr : 0.04 〜0.4%、Zr : 〇·〇3 〜〇·25%、及 Zll : 〇.〇6 〜2·0%,而剩 餘°卩分則為Cu與不可避免之不純物質,且,經XRD薄膜 法評價得到以下值,即,其{ 1〇〇丨峰強度相對於構成 壓延面極表層之銅合金結晶之{ 111}峰強度比在〇 〇4 以下者。 8· —種銅合金,該銅合金以質量比而言係含有,Cr: 〇〇4 〜0.4%、Zr : 〇.〇3 〜0.25%、及 Zn : 0.06 〜2.0% ,進而 並含有總量為0.01〜1.0%之由Ni、Sn、In、Μη、P、Mg、 及Si所構成之群中選出之丨或2種以上者,而剩餘部分則 為Cu與不可避免之不純物質,且,經XRD薄膜法評價得 到以下值,即,其{ 100丨峰強度相對於構成壓延面極 表層之銅合金結晶之{ 111 }峰強度比在0 04以下者。 9. 一種銅合金,該銅合金以質量比而言係含有,Cr : 〇〇4 〜0.4%、Zr ·· 0.03 〜0.25%、Zn : 0.06〜2.0%、Fe : 〇 ! 〜1.8%、及Ti : 0_1〜0.8%,而剩餘部分則為Cu與不可 避免之不純物質,且,經XRD薄膜法評價得到以下值, 即’其{ 1〇〇丨峰強度相對於構成壓延面極表層之銅合 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -18- 541677 A8 B8 C8 ------D8 六、申請專利範® ^ "' —— 金結晶之{ 111 }峰強度比在〇 〇4以下者。 ι〇· 一種銅合金,該銅合金以質量比而言係含有,cr:〇 〇4 〜0.4%、Zr : 0.03〜〇·25%、Zn : 〇 〇6〜2 〇%、& : 〇」 〜1.8%、及Ti : (M〜〇.8%,進而並含有總量為〇 〇ι〜 1.0%之由Ni、Sn、In、Mn、p、Mg、及Si所構成之群中 選出之1或2種以上者’而剩餘部分則為Cu與不可避免之 不純物質,且,經XRD薄膜法評價得到以下值,即’其 U00}峰強度相對於構成壓延面極表層之銅合金結晶 之{ 111 }峰強度比在0 04以下者。 U·如申請專利範圍第7至1〇項中任一項之銅合金,該銅合 金係使用於引線框者。 12·如申請專利範圍第7至1〇項中任一項之銅合金,其係經 最終冷壓而成者,而冷壓之條件則為,最終軋道之軋輥 控在100mm以上,壓延速度在200rn/min以上,及壓延油 枯度在0.05cm2/s以上。 13·如申請專利範圍第u項之銅合金,其係經最終冷壓而 成者’而冷壓之條件則為’最終軋道之軋輥徑在1〇〇腿 以上,壓延速度在2〇〇m/min以上,及壓延油粘度在〇〇5 cm2/s以上。 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐) (請先骑讀背面之注意事項再填寫本頁) 訂| -19-The copper alloy lead frame of the Shishen W patent scope item 丨 or 2, wherein the copper alloy i is contained in terms of mass ratio, Cr: 0.04 to 0.4%, Zr: 0.03 to 0.25%, Zn: 〇.〇6 ~ 2.0%, Fe: 〇 ~ ι ~ 1.8%, and Ti: 〇 ″ 0-8% ', and further contains 1%, 311, 111, One or two or more selected from the group consisting of Mn, P, Mg, and si, and the remaining portion is Cu and unavoidable impurities. • A copper alloy, which is contained in terms of mass ratio, Cr: 0.04 to 0.4%, Zr: 〇.〇3 to 〇.25%, and Zll: 〇.〇6 to 2.0%, and the remainder ° 卩 points are Cu and unavoidable impurities, and evaluated by XRD film method to obtain the following value, that is, its {100% of the peak intensity relative to the {111} peak of the copper alloy crystals constituting the pole surface of the rolled surface The intensity ratio is below 0.004. 8 · —a copper alloy, which is contained in a mass ratio, Cr: 〇〇04 ~ 0.4%, Zr: 〇03 ~ 0.25%, and Zn: 0.06 ~ 2.0%, and further contains a total amount 0.01 to 1.0% of one or two or more selected from the group consisting of Ni, Sn, In, Mn, P, Mg, and Si, and the remaining portion is Cu and unavoidable impurities, and, Evaluation by the XRD thin-film method yields the following value, that is, the {100 丨 peak intensity ratio of the {111} peak intensity ratio of the copper alloy crystals constituting the rolled electrode surface layer is below 0 04. 9. A copper alloy containing by mass ratio, Cr: 〇〇04 ~ 0.4%, Zr ·· 0.03 ~ 0.25%, Zn: 0.06 ~ 2.0%, Fe: 〇! ~ 1.8%, and Ti: 0_1 ~ 0.8%, and the remaining part is Cu and unavoidable impurities, and the following value is obtained by XRD film method evaluation, that is, its peak intensity of {1〇〇 丨 is relative to the copper constituting the extreme surface layer of the rolled surface The standard of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -18- 541677 A8 B8 C8 ------ D8 VI. Application for patents ® ^ " '—— Gold Crystal of {111} The peak intensity ratio is below 0.004. ι〇 · A copper alloy, which is contained in a mass ratio, cr: 〇〇04 ~ 0.4%, Zr: 0.03 ~ 〇 · 25%, Zn: 〇〇〇〜2 〇%, &: 〇 ”~ 1.8%, and Ti: (M ~ 0.8%, and further selected from the group consisting of Ni, Sn, In, Mn, p, Mg, and Si in a total amount of 0.00 to 1.0% One or two or more of them ', and the remainder is Cu and unavoidable impurities, and the following values were obtained by XRD film method, that is,' its U00} peak strength relative to the copper alloy crystals constituting the pole surface of the rolled surface The peak intensity ratio of {111} is less than 0 04. U · If the copper alloy according to any one of items 7 to 10 of the patent application scope, the copper alloy is used in the lead frame. 12 · If the patent application scope is The copper alloy according to any one of items 7 to 10, which is formed by final cold pressing, and the conditions for cold pressing are that the rolls in the final rolling path are controlled above 100mm and the rolling speed is above 200rn / min, and Rolling oil dryness is above 0.05cm2 / s. 13 · If the copper alloy of item u in the scope of application for patent is made by final cold pressing, the cold pressing conditions are the most The roll diameter of the rolling path is more than 100 legs, the rolling speed is more than 2000 m / min, and the viscosity of the rolling oil is more than 0.05 cm2 / s. This paper size is applicable to China National Standard (CNS) A4 specification (21 〇χ297mm) (Please read the precautions on the back before filling in this page) Order | -19-
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