TW536739B - Apparatus for exhaust white powder elimination in substrate processing - Google Patents
Apparatus for exhaust white powder elimination in substrate processing Download PDFInfo
- Publication number
- TW536739B TW536739B TW090131758A TW90131758A TW536739B TW 536739 B TW536739 B TW 536739B TW 090131758 A TW090131758 A TW 090131758A TW 90131758 A TW90131758 A TW 90131758A TW 536739 B TW536739 B TW 536739B
- Authority
- TW
- Taiwan
- Prior art keywords
- scope
- patent application
- exhaust line
- item
- chamber
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
- B01D46/12—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Filtering Materials (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75684101A | 2001-01-09 | 2001-01-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW536739B true TW536739B (en) | 2003-06-11 |
Family
ID=25045280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090131758A TW536739B (en) | 2001-01-09 | 2001-12-20 | Apparatus for exhaust white powder elimination in substrate processing |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2004537844A (ja) |
KR (1) | KR20030065593A (ja) |
CN (1) | CN1257999C (ja) |
TW (1) | TW536739B (ja) |
WO (1) | WO2002055756A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8502450B2 (en) | 2004-03-31 | 2013-08-06 | Foundation For Advancement Of International Science | Vacuum tube and vacuum tube manufacturing apparatus and method |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8066634B2 (en) | 2003-07-28 | 2011-11-29 | Welch Allyn, Inc. | Digital otoscope |
TWI494975B (zh) * | 2008-02-11 | 2015-08-01 | Advanced Tech Materials | 在半導體處理系統中離子源之清洗 |
CN103071646A (zh) * | 2011-10-25 | 2013-05-01 | 深圳市迅捷兴电路技术有限公司 | 一种用等离子体去除软硬结合板钻污的方法 |
CN102600675B (zh) * | 2012-03-22 | 2013-12-04 | 西安航空制动科技有限公司 | 化学气相沉积炉用尾气处理装置 |
KR101628077B1 (ko) * | 2014-07-22 | 2016-06-08 | 위너스 주식회사 | 질소가스 분사장치 |
KR101820821B1 (ko) * | 2017-06-27 | 2018-01-22 | (주)제이솔루션 | 설치가 용이한 반도체 및 lcd 제조공정의 배기가스 가열용 3중 배관 가열장치 |
KR102157876B1 (ko) * | 2018-08-28 | 2020-09-18 | 한국기계연구원 | 리모트 플라즈마 장치를 구비한 진공 펌프 시스템 |
CN109621578A (zh) * | 2018-11-28 | 2019-04-16 | 中核新能核工业工程有限责任公司 | 一种真空管道多重可拆卸网式过滤器 |
WO2021142028A1 (en) * | 2020-01-10 | 2021-07-15 | Lam Research Corporation | Ammonia abatement for improved roughing pump performance |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198394A (ja) * | 1984-03-21 | 1985-10-07 | Anelva Corp | 真空処理装置の排気装置 |
US5647945A (en) * | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
US5928426A (en) * | 1996-08-08 | 1999-07-27 | Novellus Systems, Inc. | Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors |
-
2001
- 2001-12-20 JP JP2002556400A patent/JP2004537844A/ja not_active Withdrawn
- 2001-12-20 TW TW090131758A patent/TW536739B/zh not_active IP Right Cessation
- 2001-12-20 KR KR10-2003-7009138A patent/KR20030065593A/ko not_active Application Discontinuation
- 2001-12-20 CN CNB018218059A patent/CN1257999C/zh not_active Expired - Fee Related
- 2001-12-20 WO PCT/US2001/050617 patent/WO2002055756A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8502450B2 (en) | 2004-03-31 | 2013-08-06 | Foundation For Advancement Of International Science | Vacuum tube and vacuum tube manufacturing apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
CN1531606A (zh) | 2004-09-22 |
WO2002055756A1 (en) | 2002-07-18 |
KR20030065593A (ko) | 2003-08-06 |
JP2004537844A (ja) | 2004-12-16 |
CN1257999C (zh) | 2006-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5269770B2 (ja) | Cvdシステム排出のイン・シトゥー洗浄 | |
JP3897382B2 (ja) | Cvdシステムの真空ラインのクリーニング方法及び装置 | |
JP4146919B2 (ja) | 基板処理設備のための現場真空ライン清浄用平行平板装置 | |
TW536739B (en) | Apparatus for exhaust white powder elimination in substrate processing | |
KR100271694B1 (ko) | 기판 처리 장치로부터의 과플루오르 화합물 가스 방출을 감소시키기 위한 방법 및 장치 | |
KR100696030B1 (ko) | 실리콘-산소-탄소 증착 프로세스의 기판 처리 챔버 배출 라인으로부터 잔류물을 제거하기 위한 방법 | |
KR100503127B1 (ko) | 기판처리장치의인-시튜진공라인을세척하기위한마이크로파장치 | |
US20060090773A1 (en) | Sulfur hexafluoride remote plasma source clean | |
JP2007043205A (ja) | Cvdチャンバのクリーニング方法 | |
JP2005286325A (ja) | リモートプラズマ源清浄技術を用いた窒化ケイ素堆積中の白色粉末低減用の装置および方法 | |
JP3855982B2 (ja) | クリーニング方法及びクリーニング装置 | |
US6354241B1 (en) | Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing | |
CN111069192A (zh) | 原位清洗装置和半导体处理设备 | |
US20110195202A1 (en) | Oxygen pump purge to prevent reactive powder explosion | |
JPH07506289A (ja) | 反応性ガスを転換するための方法,乾式多段ポンプ,プラズマスクラバー | |
US20060054183A1 (en) | Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber | |
KR20090104258A (ko) | 박막 증착 장비의 챔버 세정 방법 | |
WO2024108808A1 (zh) | 用于清洗工艺腔室的方法及其应用 | |
KR0156321B1 (ko) | 반도체용 저압 화학기상증착장치의 가스 배출관 | |
JP2009054914A (ja) | 半導体製造装置およびその使用方法 | |
JP2005200680A (ja) | Cvd装置 | |
JP2006089770A (ja) | 処理装置クリーニング方法 | |
JPS60119714A (ja) | シリコン堆積膜作成装置 | |
KR20040041336A (ko) | 펌프의 트립 방지를 위한 반도체 제조 설비 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |