TW535160B - Ferroelectric memory and method of operating same - Google Patents

Ferroelectric memory and method of operating same Download PDF

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Publication number
TW535160B
TW535160B TW090127937A TW90127937A TW535160B TW 535160 B TW535160 B TW 535160B TW 090127937 A TW090127937 A TW 090127937A TW 90127937 A TW90127937 A TW 90127937A TW 535160 B TW535160 B TW 535160B
Authority
TW
Taiwan
Prior art keywords
ferroelectric memory
memory cells
memory
group
cells
Prior art date
Application number
TW090127937A
Other languages
English (en)
Inventor
Zheng Chen
Yoshihisa Kato
Vikram Joshi
Myoungho Lim
De Araujo Carlos A Paz
Original Assignee
Symetrix Corp
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symetrix Corp, Matsushita Electric Ind Co Ltd filed Critical Symetrix Corp
Application granted granted Critical
Publication of TW535160B publication Critical patent/TW535160B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Catalysts (AREA)
  • Saccharide Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
TW090127937A 2000-09-25 2001-11-09 Ferroelectric memory and method of operating same TW535160B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23524100P 2000-09-25 2000-09-25
PCT/US2001/042288 WO2002025667A2 (en) 2000-09-25 2001-09-25 Ferroelectric memory and method of operating same

Publications (1)

Publication Number Publication Date
TW535160B true TW535160B (en) 2003-06-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW090127937A TW535160B (en) 2000-09-25 2001-11-09 Ferroelectric memory and method of operating same

Country Status (9)

Country Link
US (1) US6924997B2 (zh)
EP (1) EP1325500B1 (zh)
JP (1) JP2004526268A (zh)
KR (1) KR100558209B1 (zh)
CN (1) CN1236452C (zh)
AT (1) ATE314721T1 (zh)
DE (1) DE60116350T2 (zh)
TW (1) TW535160B (zh)
WO (1) WO2002025667A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615837B (zh) * 2016-07-29 2018-02-21 愛普儲存裝置（美國）公司 鐵電記憶元件

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TWI615837B (zh) * 2016-07-29 2018-02-21 愛普儲存裝置（美國）公司 鐵電記憶元件

Also Published As

Publication number Publication date
US20040047174A1 (en) 2004-03-11
EP1325500A2 (en) 2003-07-09
KR20030070886A (ko) 2003-09-02
DE60116350T2 (de) 2006-07-13
JP2004526268A (ja) 2004-08-26
WO2002025667A3 (en) 2002-08-22
DE60116350D1 (de) 2006-02-02
CN1466763A (zh) 2004-01-07
KR100558209B1 (ko) 2006-03-10
ATE314721T1 (de) 2006-01-15
EP1325500B1 (en) 2005-12-28
US6924997B2 (en) 2005-08-02
CN1236452C (zh) 2006-01-11
WO2002025667A2 (en) 2002-03-28

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