TW531467B - Polishing pad comprising a filled translucent region - Google Patents
Polishing pad comprising a filled translucent region Download PDFInfo
- Publication number
- TW531467B TW531467B TW090124661A TW90124661A TW531467B TW 531467 B TW531467 B TW 531467B TW 090124661 A TW090124661 A TW 090124661A TW 90124661 A TW90124661 A TW 90124661A TW 531467 B TW531467 B TW 531467B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing pad
- filler
- item
- translucent
- matrix polymer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 229920000642 polymer Polymers 0.000 claims abstract description 75
- 239000011159 matrix material Substances 0.000 claims abstract description 70
- 239000000945 filler Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000004814 polyurethane Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 5
- 229920005601 base polymer Polymers 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims 3
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 claims 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 claims 1
- 239000013522 chelant Substances 0.000 claims 1
- MIHRVXYXORIINI-UHFFFAOYSA-N ethyl 2-cyanopropionate Chemical compound CCOC(=O)C(C)C#N MIHRVXYXORIINI-UHFFFAOYSA-N 0.000 claims 1
- 229940017219 methyl propionate Drugs 0.000 claims 1
- 150000008442 polyphenolic compounds Chemical group 0.000 claims 1
- 235000013824 polyphenols Nutrition 0.000 claims 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000007517 polishing process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- -1 oxide buttons Chemical compound 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002905 metal composite material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- FGBJXOREULPLGL-UHFFFAOYSA-N ethyl cyanoacrylate Chemical class CCOC(=O)C(=C)C#N FGBJXOREULPLGL-UHFFFAOYSA-N 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23886200P | 2000-10-06 | 2000-10-06 | |
| US09/682,662 US6537134B2 (en) | 2000-10-06 | 2001-10-03 | Polishing pad comprising a filled translucent region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW531467B true TW531467B (en) | 2003-05-11 |
Family
ID=22899630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090124661A TW531467B (en) | 2000-10-06 | 2001-10-05 | Polishing pad comprising a filled translucent region |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6537134B2 (enExample) |
| EP (1) | EP1324858A1 (enExample) |
| JP (1) | JP2004511108A (enExample) |
| CN (1) | CN1468162A (enExample) |
| AU (1) | AU2001291143A1 (enExample) |
| TW (1) | TW531467B (enExample) |
| WO (1) | WO2002030617A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8485862B2 (en) | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
| WO2002070200A1 (en) * | 2001-03-01 | 2002-09-12 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
| US6702866B2 (en) * | 2002-01-10 | 2004-03-09 | Speedfam-Ipec Corporation | Homogeneous fixed abrasive polishing pad |
| US6913517B2 (en) | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
| US7435165B2 (en) * | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
| US6960120B2 (en) * | 2003-02-10 | 2005-11-01 | Cabot Microelectronics Corporation | CMP pad with composite transparent window |
| US20060199473A1 (en) * | 2003-04-03 | 2006-09-07 | Masao Suzuki | Polishing pad, process for producing the same and method of polishing therewith |
| US7059936B2 (en) * | 2004-03-23 | 2006-06-13 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
| US7195544B2 (en) * | 2004-03-23 | 2007-03-27 | Cabot Microelectronics Corporation | CMP porous pad with component-filled pores |
| US7204742B2 (en) * | 2004-03-25 | 2007-04-17 | Cabot Microelectronics Corporation | Polishing pad comprising hydrophobic region and endpoint detection port |
| US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
| US20060089094A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
| US7764377B2 (en) * | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| US20070294090A1 (en) * | 2006-06-20 | 2007-12-20 | Xerox Corporation | Automated repair analysis using a bundled rule-based system |
| DE112010004350T5 (de) | 2009-11-11 | 2012-12-20 | Nuvasive, Inc. | Chirurgisches zugangssystem und zugehörige verfahren |
| US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
| US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
| US9156125B2 (en) | 2012-04-11 | 2015-10-13 | Cabot Microelectronics Corporation | Polishing pad with light-stable light-transmitting region |
| US9238294B2 (en) * | 2014-06-18 | 2016-01-19 | Nexplanar Corporation | Polishing pad having porogens with liquid filler |
| US10259099B2 (en) * | 2016-08-04 | 2019-04-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapering method for poromeric polishing pad |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2838889A (en) | 1953-05-07 | 1958-06-17 | Hans Deckel | Device for observing an optical matching action |
| JPS5624934A (en) | 1979-08-08 | 1981-03-10 | Nec Corp | Manufacture of semiconductor element |
| DE3273475D1 (en) | 1982-10-14 | 1986-10-30 | Ibm Deutschland | Method to measure the thickness of eroded layers at subtractive work treatment processes |
| US4532738A (en) | 1983-12-19 | 1985-08-06 | General Electric Company | Method of removing a coating |
| GB2173300B (en) | 1985-04-06 | 1989-06-28 | Schaudt Maschinenbau Gmbh | Apparatus for optically monitoring the surface finish of ground workpieces |
| JPS61270060A (ja) | 1985-05-27 | 1986-11-29 | Nec Corp | ウエハの研摩方法 |
| GB8715530D0 (en) * | 1987-07-02 | 1987-08-12 | Ici Plc | Microporous products |
| JPH0223617A (ja) | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | 半導体基板ウェハの溝形成方法 |
| US5137540A (en) * | 1989-03-07 | 1992-08-11 | United Technologies Corporation | Composite monolithic lamp and a method of making the same |
| US5081796A (en) | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
| US5036015A (en) | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
| US5411430A (en) * | 1991-09-25 | 1995-05-02 | Hitachi Ltd. | Scanning optical device and method for making a hybrid scanning lens used therefor |
| US5240552A (en) | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| JP2770101B2 (ja) | 1992-05-08 | 1998-06-25 | コマツ電子金属株式会社 | 貼り合わせウェーハの研磨方法 |
| MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
| US5499733A (en) | 1992-09-17 | 1996-03-19 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5433650A (en) | 1993-05-03 | 1995-07-18 | Motorola, Inc. | Method for polishing a substrate |
| US5337015A (en) | 1993-06-14 | 1994-08-09 | International Business Machines Corporation | In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage |
| JP3326443B2 (ja) | 1993-08-10 | 2002-09-24 | 株式会社ニコン | ウエハ研磨方法及びその装置 |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5486129A (en) | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
| US5616650A (en) * | 1993-11-05 | 1997-04-01 | Lanxide Technology Company, Lp | Metal-nitrogen polymer compositions comprising organic electrophiles |
| US5375064A (en) | 1993-12-02 | 1994-12-20 | Hughes Aircraft Company | Method and apparatus for moving a material removal tool with low tool accelerations |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US6017265A (en) | 1995-06-07 | 2000-01-25 | Rodel, Inc. | Methods for using polishing pads |
| JPH08174411A (ja) | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5533923A (en) | 1995-04-10 | 1996-07-09 | Applied Materials, Inc. | Chemical-mechanical polishing pad providing polishing unformity |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
| US6010538A (en) * | 1996-01-11 | 2000-01-04 | Luxtron Corporation | In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link |
| US6074287A (en) | 1996-04-12 | 2000-06-13 | Nikon Corporation | Semiconductor wafer polishing apparatus |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6022268A (en) | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
| DE19720623C1 (de) | 1997-05-16 | 1998-11-05 | Siemens Ag | Poliervorrichtung und Poliertuch |
| US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
| US5985679A (en) | 1997-06-12 | 1999-11-16 | Lsi Logic Corporation | Automated endpoint detection system during chemical-mechanical polishing |
| US6159073A (en) | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
| US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
| US6071177A (en) | 1999-03-30 | 2000-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for determining end point in a polishing process |
| US6213845B1 (en) | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
| US6146242A (en) | 1999-06-11 | 2000-11-14 | Strasbaugh, Inc. | Optical view port for chemical mechanical planarization endpoint detection |
| US6224460B1 (en) | 1999-06-30 | 2001-05-01 | Vlsi Technology, Inc. | Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process |
| US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
| US6337101B1 (en) * | 1999-11-23 | 2002-01-08 | Valence Technology (Nevada), Inc. | Method of treating separator for use in electrochemical cell devices |
-
2001
- 2001-09-20 AU AU2001291143A patent/AU2001291143A1/en not_active Abandoned
- 2001-09-20 CN CNA018169481A patent/CN1468162A/zh active Pending
- 2001-09-20 JP JP2002534038A patent/JP2004511108A/ja active Pending
- 2001-09-20 EP EP01971235A patent/EP1324858A1/en not_active Withdrawn
- 2001-09-20 WO PCT/US2001/029398 patent/WO2002030617A1/en not_active Ceased
- 2001-10-03 US US09/682,662 patent/US6537134B2/en not_active Expired - Fee Related
- 2001-10-05 TW TW090124661A patent/TW531467B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN1468162A (zh) | 2004-01-14 |
| AU2001291143A1 (en) | 2002-04-22 |
| EP1324858A1 (en) | 2003-07-09 |
| JP2004511108A (ja) | 2004-04-08 |
| WO2002030617A1 (en) | 2002-04-18 |
| US6537134B2 (en) | 2003-03-25 |
| US20020049033A1 (en) | 2002-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW531467B (en) | Polishing pad comprising a filled translucent region | |
| US6840843B2 (en) | Method for manufacturing a polishing pad having a compressed translucent region | |
| JP5461603B2 (ja) | 研磨パッド | |
| JP4991294B2 (ja) | 引っ込んだ窓を有する研磨パッド | |
| TW564202B (en) | Abrasive article having a window system for polishing wafers, and methods | |
| JP5745504B2 (ja) | 研磨パッド窓の処理 | |
| TWI490083B (zh) | 具有局部區域透明之化學機械拋光墊 | |
| JP5090732B2 (ja) | Ｃｍｐ用多層研磨パッド材料 | |
| JP2003535484A (ja) | 化学機械研磨（ｃｍｐ）ツールで用いる研磨パッドの窓 | |
| KR970052722A (ko) | 웨이퍼를 폴리싱하기 위한 방법 | |
| KR101062088B1 (ko) | 화학 기계 연마용 연성 서브패드의 사용 방법 | |
| JP2001507997A (ja) | 光露光製版によって形成された表面パターンを有する重合体研磨パッド及びこれに関連する方法 | |
| US6224460B1 (en) | Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process | |
| JP2003507199A (ja) | 一体化した窓を有する成形された研磨パッド | |
| KR100394572B1 (ko) | 복합특성을 가지는 씨엠피 패드구조와 그 제조방법 | |
| JP2007083387A (ja) | 透明な研磨パッド | |
| CN101905448A (zh) | 一种用于化学机械平坦化的抛光垫及其制造方法 | |
| CN1933938A (zh) | 低表面能的化学机械抛光垫 | |
| TW200422141A (en) | CMP pad with composite transparent window | |
| JP2003048151A (ja) | 研磨パッド | |
| TWI276498B (en) | CMP pad with composite transparent window | |
| TWI357844B (en) | Chemical mechanical polishing pad and chemical mec | |
| TW202033310A (zh) | 拋光墊與系統及其製造與使用方法 | |
| TW202328248A (zh) | 化學機械拋光墊及其製備 | |
| TW202328247A (zh) | 化學機械拋光墊及其製備 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |