TW527638B - Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus - Google Patents
Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus Download PDFInfo
- Publication number
- TW527638B TW527638B TW090109858A TW90109858A TW527638B TW 527638 B TW527638 B TW 527638B TW 090109858 A TW090109858 A TW 090109858A TW 90109858 A TW90109858 A TW 90109858A TW 527638 B TW527638 B TW 527638B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- pattern
- photosensitive material
- exposure
- evaluation
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000012545 processing Methods 0.000 title claims description 49
- 238000011156 evaluation Methods 0.000 claims abstract description 203
- 238000011161 development Methods 0.000 claims abstract description 112
- 230000003287 optical effect Effects 0.000 claims abstract description 72
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 192
- 239000011248 coating agent Substances 0.000 claims description 131
- 238000000576 coating method Methods 0.000 claims description 131
- 239000000463 material Substances 0.000 claims description 130
- 238000005286 illumination Methods 0.000 claims description 69
- 238000003384 imaging method Methods 0.000 claims description 48
- 238000005259 measurement Methods 0.000 claims description 42
- 238000012546 transfer Methods 0.000 claims description 36
- 238000001514 detection method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 13
- 238000000691 measurement method Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 4
- 206010034960 Photophobia Diseases 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 208000013469 light sensitivity Diseases 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims 5
- 230000000875 corresponding effect Effects 0.000 claims 3
- 230000003068 static effect Effects 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 143
- 235000012431 wafers Nutrition 0.000 description 159
- 239000010408 film Substances 0.000 description 17
- 241000532784 Thelia <leafhopper> Species 0.000 description 13
- 238000001816 cooling Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 230000005856 abnormality Effects 0.000 description 8
- 230000004075 alteration Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 102100039201 Constitutive coactivator of peroxisome proliferator-activated receptor gamma Human genes 0.000 description 1
- 101000813317 Homo sapiens Constitutive coactivator of peroxisome proliferator-activated receptor gamma Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 208000027390 severe congenital neutropenia 3 Diseases 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000124506 | 2000-04-25 | ||
| JP2001126644A JP2002015992A (ja) | 2000-04-25 | 2001-04-24 | リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW527638B true TW527638B (en) | 2003-04-11 |
Family
ID=26590755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090109858A TW527638B (en) | 2000-04-25 | 2001-04-25 | Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2002015992A (enExample) |
| KR (1) | KR100781099B1 (enExample) |
| TW (1) | TW527638B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI417928B (zh) * | 2003-05-09 | 2013-12-01 | Ebara Corp | 電子線裝置、電子線檢查裝置及曝光條件決定方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003218022A (ja) * | 2002-01-28 | 2003-07-31 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| KR100528971B1 (ko) * | 2003-05-02 | 2005-11-16 | 한국전자통신연구원 | 전자빔 리소그라피 시스템 |
| JP6415186B2 (ja) * | 2014-08-27 | 2018-10-31 | キヤノン株式会社 | 評価用マスク、評価方法、露光装置及び物品の製造方法 |
| CN112204707B (zh) * | 2018-05-31 | 2024-07-23 | 应用材料公司 | 数字光刻系统的多基板处理 |
| CN113504711B (zh) * | 2021-06-28 | 2023-05-02 | 上海华虹宏力半导体制造有限公司 | 光刻显影的检测方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2560371B2 (ja) * | 1988-01-05 | 1996-12-04 | 株式会社ニコン | 基板処理システム |
| US4908656A (en) * | 1988-01-21 | 1990-03-13 | Nikon Corporation | Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision |
| JP2580668B2 (ja) * | 1988-01-21 | 1997-02-12 | 株式会社ニコン | 露光方法、露光条件測定方法及ぴパターン測定方法 |
| JPH0289305A (ja) * | 1988-09-27 | 1990-03-29 | Nikon Corp | リソグラフィ装置 |
| JPH0828321B2 (ja) * | 1990-08-20 | 1996-03-21 | 松下電器産業株式会社 | レジスト塗布評価方法 |
| JPH04168715A (ja) * | 1990-10-31 | 1992-06-16 | Nec Yamagata Ltd | フォトレジストパターン形成装置 |
| JPH05102031A (ja) * | 1991-10-04 | 1993-04-23 | Fujitsu Ltd | 感光性被膜の感度測定法及び耐蝕性被膜の形成法 |
| US5283141A (en) * | 1992-03-05 | 1994-02-01 | National Semiconductor | Photolithography control system and method using latent image measurements |
| JP3058541B2 (ja) * | 1993-08-31 | 2000-07-04 | ホーヤ株式会社 | レジストパターン形成条件決定方法及びレジストパターン形成方法 |
| JPH09218500A (ja) * | 1996-02-14 | 1997-08-19 | Dainippon Printing Co Ltd | レジストパターンの作製方法 |
| JPH09232223A (ja) * | 1996-02-19 | 1997-09-05 | Canon Inc | アライメント方法 |
| JPH09257457A (ja) * | 1996-03-18 | 1997-10-03 | Matsushita Electron Corp | パターン形状計測方法およびパターン位置計測方法 |
| JPH10260010A (ja) * | 1997-03-19 | 1998-09-29 | Nikon Corp | マーク計測方法及び装置 |
| JP4253860B2 (ja) * | 1998-04-15 | 2009-04-15 | ソニー株式会社 | 露光方法及び露光装置 |
-
2001
- 2001-04-24 JP JP2001126644A patent/JP2002015992A/ja active Pending
- 2001-04-25 TW TW090109858A patent/TW527638B/zh not_active IP Right Cessation
- 2001-04-25 KR KR1020010022329A patent/KR100781099B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI417928B (zh) * | 2003-05-09 | 2013-12-01 | Ebara Corp | 電子線裝置、電子線檢查裝置及曝光條件決定方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010098873A (ko) | 2001-11-08 |
| KR100781099B1 (ko) | 2007-11-30 |
| JP2002015992A (ja) | 2002-01-18 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |