TW527638B - Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus - Google Patents

Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus Download PDF

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Publication number
TW527638B
TW527638B TW090109858A TW90109858A TW527638B TW 527638 B TW527638 B TW 527638B TW 090109858 A TW090109858 A TW 090109858A TW 90109858 A TW90109858 A TW 90109858A TW 527638 B TW527638 B TW 527638B
Authority
TW
Taiwan
Prior art keywords
substrate
pattern
photosensitive material
exposure
evaluation
Prior art date
Application number
TW090109858A
Other languages
English (en)
Chinese (zh)
Inventor
Yuji Imai
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of TW527638B publication Critical patent/TW527638B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H10P72/0474—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW090109858A 2000-04-25 2001-04-25 Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus TW527638B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000124506 2000-04-25
JP2001126644A JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Publications (1)

Publication Number Publication Date
TW527638B true TW527638B (en) 2003-04-11

Family

ID=26590755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090109858A TW527638B (en) 2000-04-25 2001-04-25 Evaluating method of lithography system, adjusting method for substrate-processing apparatus, lithography system and exposure apparatus

Country Status (3)

Country Link
JP (1) JP2002015992A (OSRAM)
KR (1) KR100781099B1 (OSRAM)
TW (1) TW527638B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417928B (zh) * 2003-05-09 2013-12-01 荏原製作所股份有限公司 電子線裝置、電子線檢查裝置及曝光條件決定方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (ja) * 2002-01-28 2003-07-31 Tokyo Electron Ltd 基板処理方法及び基板処理装置
KR100528971B1 (ko) * 2003-05-02 2005-11-16 한국전자통신연구원 전자빔 리소그라피 시스템
JP6415186B2 (ja) * 2014-08-27 2018-10-31 キヤノン株式会社 評価用マスク、評価方法、露光装置及び物品の製造方法
JP7212701B2 (ja) * 2018-05-31 2023-01-25 アプライド マテリアルズ インコーポレイテッド デジタルリソグラフィシステムでのマルチ基板処理
CN113504711B (zh) * 2021-06-28 2023-05-02 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560371B2 (ja) * 1988-01-05 1996-12-04 株式会社ニコン 基板処理システム
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
JPH0828321B2 (ja) * 1990-08-20 1996-03-21 松下電器産業株式会社 レジスト塗布評価方法
JPH04168715A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd フォトレジストパターン形成装置
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
JP3058541B2 (ja) * 1993-08-31 2000-07-04 ホーヤ株式会社 レジストパターン形成条件決定方法及びレジストパターン形成方法
JPH09218500A (ja) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd レジストパターンの作製方法
JPH09232223A (ja) * 1996-02-19 1997-09-05 Canon Inc アライメント方法
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
JPH10260010A (ja) * 1997-03-19 1998-09-29 Nikon Corp マーク計測方法及び装置
JP4253860B2 (ja) * 1998-04-15 2009-04-15 ソニー株式会社 露光方法及び露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417928B (zh) * 2003-05-09 2013-12-01 荏原製作所股份有限公司 電子線裝置、電子線檢查裝置及曝光條件決定方法

Also Published As

Publication number Publication date
KR100781099B1 (ko) 2007-11-30
KR20010098873A (ko) 2001-11-08
JP2002015992A (ja) 2002-01-18

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