TW522530B - Semiconductor package unit - Google Patents

Abstract

Disclosed is to provide semiconductor package unit having at least duplicate capacity. By using one or at least two solution selected from the group of ferric chloride, cupric chloride, sulfuric acid + hydrogen peroxide as wet etchant liquid, and selectively etching the two faces of clad sheet 34, to form substrate having inner lead layer, forming insulation layer and outer lead layer onto the said substrate, to undergo the fabrication of circuit pattern on the outer lead layer. Furthermore by etching the columnar lead formed in the inner lead layer and outer lead layer in the said substrate, to electrically connect with the semiconductor chip 1, 2 onto the two faces of the clad sheet, to form integrally constructed semiconductor package unit.

Description

522530 V. Technology of Invention Description (1) The present invention relates to a package unit that can correspond to a semiconductor. In addition, the semiconducting statics of integrated and integrated semiconductors ^ Wu Ming especially refers to the novel semiconductor package unit that can hold m packages of the body package in the same space volume. In recent years, the + conductor sentence in the heart has been highly integrated with semiconductor devices, multi-connected tires, and small electronic devices, and the requirements of the Soviet Union are small and small. In order to make this high: ^ It is possible that the assembly substrates of the beginning and the end are yoke and slab substrates. It is possible to increase the density of the wiring layer A and the wiring board: the research and development of the wiring base is progressing vigorously. Although this kind of multi-layered method related to the θ mouth structure k, with little change, the ancient y < has more or less U U U '', the method used to the white is roughly a seal wheat p If you are a chip person, as long as you do n’t miss 4 u u 丨 mouth 2 has already been combined in the body ^ ^ No, plus the increase in the daily capacity of each package and the increase in the volume of each package will be blamed. As for the method to improve such a state, for example, in Japanese Unexamined Patent Application No. Hirakai: m: Λ, the electrical connection is made between the semiconductor modules of a plurality of junctions, and the oxygen is used to pick up the pile ^ ^ The door-to-door ceremony is connected between each semiconductor module and the channel M2 to form a plurality of electrodes having a specified function, and each half is up to the terminal junction portion of the body wafer. Any one of the two Γ poles is configured as a solid electrode of each semiconductor wafer, and is connected to the thousands of V-shaped bodies on the crystal pad of the semiconductor crystal junction (pad) with a semi-conductor, and an egg hole. Page 5 of the semiconductor wafer 91047-TYJP-1574TW.ptd 522530 V. Description of the invention (2) ^^ Some joints The inter-pattern ", and then the semiconductor module to each said semiconductor substrate θ = f at the same evening, evening to be constituted by a plurality of electrodes according to any one of said electrodes, and as a natural substrate of the date. And second; film =? Γ is used to select the wiring pattern spacer for the first thin-film carrier semiconductor module gas connection sheet. It can be installed in the same package as the conventional package by electrical distribution and installation of the empty conductor I group. When the layer == the body module is approximately equal in thickness, it is caused by the interval: the chip capacity of the package body ΐ the body conductor module ... and then each one has a thin film load: two 223 "3, the proposal of the bulletin, by Make the wheel in and out, and the side of the N lead and the gate of the process with the semiconductor wafer match 0, and reduce the device cavity to the junction that makes the semiconductor wafer inaccessible = 21 * It can narrow the layer interval to make the semiconductor wafer And the thin film carrier Rongdan until the contact, so the space volume will be reduced and the quality in the package will increase qualitatively. 0 The problem to be solved by the invention, however, according to Japanese Patent Laid-Open No. 1 0- 1 63 4 1 Proposer 1 of the 4th bulletin & a half-body sheet is electrically connected by a bump (bumP) and the inner lead part connected to the bump, so it is limited to adopt this type of structural surface The space between the wafers is not filled, so the rule of lamination is increased. Increases, the volume also increases significantly Lambda space, so that the effect could not be fully utilized thereby forming a laminated caused.

522530 V. Description of the invention (3) Soft J2: Proposal No. 23683 of “i Kaikai No. 1” “Go to the field for interlayer bonding between perforations, so there is the second part of this part,‘ Siya is not enough. The present invention is to make use of the present invention by reducing as much as possible the existence of human beings in the layer. ☆ The space capacity of the chip is ok, but when it is a chip :: By using this method, the semiconductor can be "installed; Ben: Lai = Wenli is set to be at least twice the customary method. The hand used in the book to condense the subject and the semi-used cladding board of the present invention are set in the aforementioned cladding sign. Furthermore, borrow The cladding (Cu) fg and nickel (Ni) laminates of the foil and nickel foil of the present invention are preferably formed from a plurality of semiconductor crystals, and the nickel foil material or producer of the cladding engraving layer is producing or plating a nickel layer. The joint and the aforementioned nickel foil or plating are used to form the unit board which is laminated on the conductor enveloping board. The group with a foil is a nickel layer formed on the real surface and the body is packed with wet nickel. A method of forming a circuit on the surface of the package body by the method of etching is used to connect the circuit and the semiconductor wafer that has been lowered and integrated into a special unit on a printed circuit board or the like, so that an integrated unit can be manufactured. For most composite copper bodies, the material of this clad board is steel. 'For example, (: 11 / "/ (: 11 / ^: 1 / (: 11), a copper foil material such as a clad conductor layer, and a stop-over body are formed by pressure welding at a rolling rate of 0.1 to 3%. After the activation of the copper foil and the nickel box in the empty tank in advance, cold lamination was performed by laminating the steel = cold rolling at a light rolling rate of 0. 1 to 3%. Page 7 91047-TYJP-157 ptd 522530 V. Description of the invention (4) At this time, the aforementioned activation treatment should be used in the extremely low-pressure inert gas range of (1) 10-1 ~ 1 \ 101〇1 ^, (2) with The aforementioned copper foil and the aforementioned nickel layer are σ on each side which has been grounded, and an alternating current of 50 MHz is applied between the other electrodes B which are pre-insulated, to perform a glow. Discharge '(3) and expose to The area of the electrode in the polymer generated by the above-mentioned glow discharge is less than 1/3 of the area of the electrode B. 1 = ^ Sputtering etching process is performed. V ~ hunting by using a combination of ferric chloride, copper chloride, or sulfuric acid One or two or more kinds of aqueous solutions are used as a wet etching method to etch the surface of the clad board and selectively etch the wiring layer in this bag. Form a columnar conductor on the board, reshape = the strength of the large cladding board coated with insulating resin and the remaining cladding board. The laminated package I can increase the strength of the package when it is 2 knives: die and use The outer layer of the package unit of the multi-layer invention is covered with milk resin and the like to form a completely sealed package. Implementation of the invention The shape of the beer is as shown in the following figure. The specific description of the yoke is as follows. As for the structure of the unit with one of the present invention, please refer to FIG. 10 and FIG. == the semiconductor package is not as shown in the figure, and is formed by a copper foil layer 19 /). The two wiring diagrams (with a thickness of 10 ~ 100), a nickel plating layer (with a thickness of 0.5 ~ 3 \, above, so as to stop the etching layer) or a nickel layer (with a thickness of 5 ~ 10 // 522530 V. Description of the invention (5) m) 2 0, 21 are joined to form the core of the base. Secondly, the copper foil layer that becomes the wiring layer 丨 9 3 The bump 18 for the connection of the body wafer 1 (thickness ;; 2: the shape above and the semiconducting wiring are like 丨 gan_ι ΙΟΟ # 111 is and) In addition, a mounting substrate 41 made of insulating resin is formed in Yulian, where the thickness of the substrate 17 is equal to the thickness of 10 and the center is preferably connected). The second sheet is on the side, and a soft tan ridge is formed on the lower part of the printed circuit board. Next, FIG. 23 is used to explain the manufacturing of the above-mentioned semiconductor package unit. First, the formation of a three-layer clad board is described. When manufacturing a semiconductor package unit for bulk acoustics, it becomes an internal conduction stop layer 2. , 21 / i 度; It is advisable) on both sides of copper 笮 of Λ and Bu # v $ 山 又 · # m of nickel plating. This nickel plating is performed on both sides of 5 Π Po with nickel plating commonly used. Also, in the clad board manufacturing device that uses nickel foil instead of the main metal plating, first the thickness of February is used. The thickness of the foil shown in Figure 23 is used to press the nickel foil to a thickness of 5 to 10 mm. Early on. Furthermore, the nickel box was pressed against a three-layer clad plate of an opposing foil / Ni foil. Put ice into N! Po / Cu and, for explanation, # LV D > μ shape will be explained. In the § His Majesty, I would like to take the case of nickel-plated copper boxes next, and ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ a layer of clad sheet 22 on which nickel has been applied on both sides. The indicated = / Cu / Nl is on the reel 23. The copper-backed material 24, which has become the name of the column skin m-day clothing, is wound on the other side, and the coil 24 is a core conductor. The coil is wound on page 9 91047-TOP-1574TW.ptd 522530

Nickel-plated copper foil 22 and copper foil 24 are simultaneously wound on the two winding rolls 23, and a part of them is wound on rolling electrodes 27 and 28 protruding in the etching chamber 26, and in the etching chamber 26 Activated by sputtering. It presses the nickel-plated copper foil material 22 and the copper foil material 24 with rolling rollers 29 and 30, and winds the scoop plate 31 onto the winding roller 32. A four-layer cladding layer of Cu / Ni / Cu / Ni was formed by pressure bonding, and the plate was formed. At this time, the activation treatment is as disclosed by the present applicant in Japanese Patent Application Laid-Open No. 1 2 24 1 84, which is (1) at the pole of} χ ^ ~ 1 χ, in an inert gas atmosphere, (2) Using nickel-plated copper foil 22 and copper vl material 24 with joint surfaces as the electrodes A on the grounded side, an alternating current of 1 to 50 MHz was applied between the other electrodes B supported by insulation and Glow discharge '(3) is performed, and the electrode exposed to the plasma generated by the aforementioned glow discharge has an area less than 1/3 of the area of electrode B, and (4) is performed by sputtering etching. Secondly, this clad plate having a four-layer structure is wound on the rewinding shaft 23 again. The copper foil 33 (see Fig. 1) which becomes the connection bump 18 is wound on the winding reel 25. Four winding cladding plates and copper foil are respectively wound by two winding reels 23 and 25, and a part of them is wound around the protrusion chamber 522530. V. Description of the invention (7) Discharge 乂 3) / Λ = 于Less than 1/3 of the electrical product of the plasma armor generated by the aforementioned glow discharge, the lamp is put into the lamp through a engraving process. Breast rollers 29 and 30, so that the recording surface of the cladding plate 22 and the copper falling material 24 are ground by the take-up roller 32 ::

Cn / Ni / Cu / Ni / Cu five-layer clad board. i 者 接。 Using the above operation, as shown in Fig. 1, the laminate 34 can be manufactured. The package of the eight-layer structure is like this. By using the sound yoke package and resident in Figure 23 to go ... Dust welding, in the order of copper / recording / copper / nickel / copper: = layer, interlayer intermediary Multi-layer clad board with recording layer ^ Copper layer is used as the front and back, and more than three μ, +, copper and nickel fungi are set, and multi-layer structure can be manufactured by = supply ： 心 ： / 、 Cut the dagger layer board 3 4 into the household weight Ai Rizuo from the figure to the 11th figure 'After the following steps 1, the conductor y' Refer to the second first, as shown in the second of the second figure V For one embodiment. After the film 35, exposure is performed. A photoresist-like conductor 18 is formed on the surface of the copper anchoring material 24, and the choice of the copper box material 24 is intricate. The pillar Wuwuling is decomposed and the copper foil material 24 is removed. As for the etching solution used today, it is advisable to use an aqueous solution of ammonium persulfate. ’丨 L bite + Superemulsified lice aqueous solution or’ Etching treatment system impregnates the object to be treated in the etching solution 91047-TYJP.1574TW.ptd Page 11 522530

= ’However, spraying or dropping the remaining aqueous solution onto the surface to be etched, that is, ^ In the case of spraying or dropping on the cloth, photoresist treatment is sufficient if only the top layer is implemented by a spin coater or other methods. In the case of immersion in the etching solution and pre-etching 1, although the etching is immersed in the etching bath at 50 ° C for 10 minutes, the cold temperature and immersion time of each are based on the amount of work and time. Etc. can determine the optimal conditions. / 'Second, as shown in FIG. 4, the nickel layer 20 can be removed by selective etching. As the etchant, a commercially available nickel etchant such as Mers 忖 ip manufactured by Mertex can be used. After that, as shown in Fig. 5, the rim resin 39 was applied and applied, and the surface of the sugar was uniform. And, the surface was simultaneously removed with the remaining light ′. The surface was polished with an epoxy resin or polyimide resin to 3 g of the insulating resin layer, and the head of the columnar conductor 18 was exposed as a resist film. It is believed to be the same as shown in Figure 6. That is to say, the other side is also shown on the other side of the copper), and then exposed to light: a photoresist film has been formed on the surface of the Gan 3 (not described, the columnar conductor 17 is left / ^, / ^ ow) The copper bath material 33 is selected for use, and the sulfuric acid bath 33 is preferred. As for ... Emulsified hydrogen water, liquid or ammonium persulfate water soluble. At this time: Etching liquid, and He Er by selective etching Remove the nickel layer 21

Merstrip NR-950 and other cities use the same π 丨 nickel etchant manufactured by Mertex. Next, in order to take away the class a ~ road, as shown in Fig. 8, an electric main cloth photoresist film 37 is formed on the surface of the substrate of the cold geography, and exposed and developed 522530. V. Description of the invention (9) As shown in FIG. 9, the copper foil 9 is subjected to a selective etching process to form a selective etching solution at this time, and an aqueous solution of ferric chloride, an aqueous solution of sulfuric acid, oxygen, and an aqueous solution of chlorine can be used. By this process, a wiring layer can be formed. As shown in FIG. 10, an epoxy resin or a polyimide resin is used as the insulating tree and coated, and then the surface is polished until the surface of the insulating resin layer 39 becomes 1. Also, at this time, the head of the columnar conductor 17 was made to be exposed, and the remaining photoresist film was removed on the same day. As shown in Fig. 11, after the technique, the anisotropic conductive contact agent containing conductive particles is used to connect the city's Fengpu waterfall to the 5th ¥ Diankou cattle V body θ film 1 and 2 to the two of the wiring layer On the surface, uploading; = the printed circuit board 41 covering the mounting substrate 40 already mounted on both sides is soldered / as a package unit. Χ, the lower part of the printed circuit board is based on: 基 / connection, and then a layer The combination can be used to make a semiconductor package. Filling ::: Insulating resins such as oxygen resins and polyimide resins are used a second time to illustrate the manufacturing of package-related units using Figure 12 to Figure 22. The Xixi Stone II t Le Yi Beishi morphology is not removed by etching the two ends of the two sides of the plate, i.e. to a fixed value. The reason for this is that the "layer j" replaces the lead frame of the semiconductor package unit. To. : Department: Use only for evil, the manufacturer of clad board, its description can be omitted here. It is the same as the λ yoke, so film 35: a photoresist is formed on the surface of the copper falling material 24 by the advanced image. In this case, the first embodiment

Page 13; 522530 V. Description of the invention + Same: In this second embodiment, a lead frame-shaped film 36 can be formed on both ends of the substrate. Secondly, as shown in Fig. U, carry out == engraving, and the columnar conductor 18 and the wire ㈣ remain and are dissolved and removed. As for the etching solution at this time, sulfuric acid is used. At this time, the situation of silver engraving is the same. As shown in FIG. 15, the younger brother only applied the second layer to remove the nickel layer 20 as shown in FIG. 15. After that, the shape of the nickel layer 20 was the same as that in the first circle, and the imine resin was selected as the insulating resin 39 and coated. I: The surface of the epoxy resin or polymer resin layer 39 is uniform. And the cloth makes the insulation exposed at this time, and at the same time, the head of the remaining light conductor 18 is removed, and the assembly is treated in the same way as shown in FIG. 17. That is, after the copper box material is shown in reverse, it is exposed and developed into a photoresist film (not yet, the selection of the columnar conductor 17 and the lead frame 38m, copper tears) is as of this time In order to use liquid, in addition to ㈣33. Ammonium acid aqueous solution is suitable. · Emulsified oxygen aqueous solution or persulfur is the second, as shown in Figure 18, the etching solution at this time is also the same as the above-mentioned: etched by two f Remove the nickel layer 2.! Secondly, the situation is the same as before; =? The way, as shown in Figure 19, after the formation of electricity on the surface of Tu Xi, soil plate, as shown in Figure 20 As shown in the figure, exposure and development are performed on copper, 0, 3 and 7. As for the selective etching at this time, the selective etching process and the electrical J conditions are formed, which is also the same as that of the first embodiment 91047.TYJP_i574TW.ptd 苐 page 14 522530 V. Description of the invention cn) ^, and then, as shown in FIG. 21, epoxy resin or polyimide resin: ,, s, 彖, 彖, 9, 9, 9, 9, 9, 9, and 涂布, and then apply the insulating resin layer 3 The surface of 9 is evenly sentenced. Finally, it is implemented in the same way as in the case of the first embodiment, and a commercially available semiconductor wafer is connected to both surfaces of the wiring layer by an anisotropic conductive adhesive containing a conductive :::, and the wafer is placed on both sides. As shown in FIG. 22, the substrates on which the wafers i and 2 are placed are as shown in FIG. 22: The quilting part 38 of the oxygen resin or polyimide resin is bent and made into FIG. 22 The end portion 43 is in the shape of a bit: The lead frame with the above-mentioned production is connected to a large number via a spacer, etc., and can be used as a semiconductor package. The effect of the early invention is as described above. By using the enclosure such as 廿 I in the scope of patent application No. 1 to form a space on the two sides of which the wafer has been mounted and combined, the semiconductor package can be made. The cladding plate used in the invention of the exclusion layer of the overall content can be reduced due to the use of pressure-welded materials. ^: Again in this = By using this cladding plate and making selections for the rest of the time, it can accommodate ^ this, V body Package unit, so the production cost is low. Easy to make half of the star. Figure 1 is a diagram of the step 1 of the method of manufacturing the body unit related to the first embodiment of the present invention. 、 Method m Cross section of unprocessed cladding material in the picture on page 15 9047-TYJP.1574TW.ptd 522530

Figure 2 is a cross-sectional view showing a state in which a method for manufacturing a semiconductor package unit according to the first embodiment of the present invention is applied to a copper layer for forming a columnar conductor. FIG. 3 is a cross-sectional view illustrating a method of manufacturing a semiconductor package unit related to the first embodiment of the present invention, showing a state where the surface copper layer is selected and the columnar conductor has been formed. . FIG. 4 is a cross-sectional view showing a state of a method for manufacturing a semiconductor package unit according to the first embodiment of the present invention, after the nickel layer is bent and etched. Fig. 5 is a cross-sectional view showing a state of a method for manufacturing a semiconductor envelope unit according to a first embodiment of the present invention, in which an insulating resin is applied (and a surface layer has been ground. A "" 6 The figure is a cross-sectional view showing the steps of a method for manufacturing a semiconductor package body related to the first embodiment of the present invention. The figure shows a state where a columnar conductor has been formed on the opposite side. A cross-sectional view showing the state of the nickel layer on the opposite side which has been selectively selected from the drawing explaining the steps of the method for manufacturing a semiconductor envelope unit according to the first embodiment of the invention. The step description of the method for manufacturing a semiconductor package unit according to the first embodiment is a cross-sectional view showing a state where a photoresist resin for circuit pattern formation has been applied to a substrate. / FIG. 9 is the first embodiment of the present invention. The figure explaining the steps of the method for manufacturing a semiconductor package unit according to the embodiment is a cross-sectional view showing a state after the circuit pattern has been formed by etching.

522530 V. Description of the invention (13) Figure 10 The system of the body unit The circuit has been formed Figure 11 The system of the unit body The state of the body unit on the assembly substrate Figure 12 The system of the unit body. Fig. 13 Body unit fabric lead frame shape Fig. 14 Body unit selection Etch and Fig. 15 Body unit selection After engraving 16th body unit Milled surface 17th body unit It is a cross-sectional view on the opposite side of the description of the steps of the first method of the present invention and has been developed on both sides of the description of the steps of the first method of the present invention. The steps for the second manufacturing method of the present invention are described as being related to the achievement of the present manufacturing method. The photoresist is the same as the formed column of the present manufacturing method. The state of the step is the same as that described in the second step of the method of the present invention. The second step is described on the copper layer, and the second step is described in the figure. Sectional illustration of the second step description

91047-TOP-1574TW.ptd Semiconductor package according to an embodiment A cross-sectional view showing a state in which an insulating resin is applied to a surface thereof after being polished. The semiconductor package diagram related to the embodiment shows the placement of a semiconductor wafer, and the semiconductor package diagram related to the embodiment of the printed circuit board. The cross section of the unprocessed cladding material in the semiconductor package diagram. A cross-sectional view showing a columnar conductor and a coated state. The semiconductor package according to the embodiment is a cross-sectional view showing a state in which a lead wire is wired on a surface copper layer. The semiconductor package diagram related to the embodiment shows that the nickel layer has been selected. The semiconductor package diagram related to the embodiment shows the coating of insulating resin and the semiconductor package diagram according to the embodiment is shown on the opposite side. Page 17 522530 V. Description of the invention (14) A sectional view of a state where a columnar conductor and a lead frame are formed. Fig. 18 is a cross-sectional view showing a state of a method of manufacturing a semiconductor package unit pertaining to a second embodiment of the present invention, showing a state where the nickel layer on the opposite side has been selectively etched. Fig. 19 is a cross-sectional view showing a state in which a circuit pattern and a photoresist for forming a lead frame have been applied to a substrate in a method for explaining a method of manufacturing a semiconductor package unit according to a second embodiment of the present invention. Fig. 20 is a sectional view showing a state of a method for manufacturing a semiconductor package unit according to a second embodiment of the present invention, showing a state after a circuit pattern has been formed by etching. FIG. 21 is a cross-sectional view showing a state of a method for manufacturing a semiconductor package unit related to a second embodiment of the present invention after the substrate is covered with an insulating resin and is filled. FIG. 22 is a step description of a method for manufacturing a semiconductor package in an early position related to the second embodiment of the present invention. The figure does not show a state in which a semiconductor chip is placed on a substrate and a lead frame is processed at the end. Section view. & Figure 23 is a front view of a cladding metal plate manufacturing apparatus used in the present invention. Explanation of drawing number 1, 2 semiconductor wafer 3 solder bump 1 7, 1 8 columnar conductor 19 copper foil layer

91047-TYJP-1574TW.ptd Page 18 522530 5. Description of the invention (15) 20, 21 Nickel-plated or nickel foil layer 23 Rewinding reel 24 Copper foil 25 Rewinding reel 26 I Worm chamber 27 > 28 Rolling electrode 29 Vacuum tank 30 Rolling unit 31 Cladding board 32 Winding roller 33 Copper foil 34 Cladding board for printed circuit board 35 ^ 36 ^ 37 Photoresist film 38 Lead wire 39 Resin 40 Assembly substrate 41 Wafer insulation resin 42 Lead frame end 50 printed circuit board

91047-TOP-1574TW.ptd Page 19

Claims (1)

[] A semiconductor package unit, which selectively etches a cladding board made of five layers of copper / nickel / copper / nickel / copper and forms bumps and wiring layers for semiconductor wafer connection. 0 has been placed on both sides of the semiconductor wafer. Fgrf # 丨 89115381-1574-91047TYJP. Ptc Page 21 2002.06.06.021