JP2008147237A - Metal laminated plate for qfn and its manufacturing method, and method of manufacturing qfn using the metal laminated plate for qfn - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal laminated plate for QFN (Quad Flat No lead Package) that can cope with thinning, downsizing and high integration, and to provide a method of manufacturing the metal laminated plate for QFN and a method of manufacturing the QFN. <P>SOLUTION: The metal laminated plate 4 for QFN is comprised of three layers: a copper foil 1, a nickel layer 2 and a supporting body 3. The nickel layer 2 is provided on the copper foil 1 or the supporting body 3 by plating method or lamination method, and before the copper foil layer having the nickel layer and the supporting body, or the copper foil and the supporting body having the nickel layer are overlapped respectively, the joint surfaces are activated in advance, and then they are laminated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a thin and miniaturized metal laminate for QFN (Quad Flat No Lead Package), a method for producing the metal laminate for QFN, and a method for producing QFN using the metal laminate for QFN.

As the degree of integration of semiconductors has improved, the number of input / output terminals has increased. Therefore, a semiconductor package having a large number of input / output terminals is required. In general, there are QFP (Quad Flat Package), which is a type in which input / output terminals are arranged in a line around the package, and QFN (Quad Flat No Lead Package) in which electrodes are exposed from the bottom or side to bottom. The QFP is difficult to miniaturize because the wiring goes out. In general, a QFN whose wiring is in resin is easy to downsize.
Conventionally, when manufacturing QFN, nickel plating is performed on an electrolytic copper foil, a photosensitive dry film resist is laminated, a wiring pattern is exposed, a plating resist is formed, and then copper plating is performed to form a first wiring. (For example, refer to Patent Document 1). Finally, the electrolytic foil is removed by etching. However, when copper plating is performed on the plating resist to form the first wiring, if the copper plating is performed at a high current density, the plating resist is peeled off. Therefore, it is necessary to perform the plating at a low current density, resulting in poor productivity.

  As another QFP manufacturing method, as shown in FIG. 4, first, the lead frame 9 shown in FIG. 4 (a) is etched to form a wiring pattern as shown in FIG. 4 (b). Next, after etching, the strength of the lead frame is weak. Therefore, as shown in FIG. 4C, the support 3 is laminated via the adhesive 10. Further, as shown in FIG. 4D, after the IC substrate 7 is laminated, the connection 6 is performed, and after the lead frame, the IC substrate 7 and the connection 6 are embedded with the organic resin 5, as shown in FIG. In addition, a method of removing the support 3 and the adhesive 10 has also been proposed. However, in this conventional method, since the lead frame 9 for forming the wiring pattern is etched before the support 3 is laminated, it is necessary to use a thick one in terms of strength. Therefore, it is difficult to reduce the thickness by this conventional method.

As described above, various proposals have been made as semiconductor packages that can cope with thinning, miniaturization, and high integration, but further improvements are desired to satisfy all aspects of performance, characteristics, and productivity. .
JP 2004-247766 A

  The present invention relates to a metal laminate for QFN and a metal laminate for QFN capable of obtaining a QFN (Quad Flat No Lead Package) that can cope with further reduction in thickness, size, and degree of integration, and that is excellent in productivity. An object of the present invention is to provide a method for producing QFN and a method for producing QFN using the metal laminate for QFN.

  The metal laminate for QFN of the present invention according to claim 1 for solving the above-mentioned problems is characterized by comprising three layers of copper foil / nickel layer / support. According to a second aspect of the present invention, in the metal laminate for QFN of the first aspect, the nickel layer is made of a nickel plating layer or a nickel foil. The invention according to claim 3 is the metal laminate for QFN according to claim 1 or 2, wherein the support is made of copper foil. Further, the invention of claim 4 is the metal laminate for QFN according to claim 1 or 2, wherein the copper foil has a thickness of 8 to 100 μm.

The method for producing a metal laminate for QFN of the present invention according to claim 5 for producing the metal laminate for QFN is a method for producing a metal laminate for QFN comprising three layers of copper foil / nickel layer / support. , A step of forming a nickel layer on either the bonding surface of the copper foil or the bonding surface of the support, the copper foil and the support on which the nickel layer is formed, or the support on which the copper foil and nickel layer are formed Are stacked such that the nickel layer faces the support or the copper foil, and the copper foil and the support are laminated by a method of cold rolling.
The invention of claim 6 is the method for producing a metal laminate for QFN according to claim 5, wherein the copper foil and support on which the nickel layer is formed, or the support on which the copper foil and nickel layer are formed, Prior to superimposing, each bonding surface is activated.

The invention according to claim 7 is the method for producing a metal laminate for QFN according to claim 5 or 6, wherein the nickel layer is formed on the copper foil or the support by using the nickel foil as the copper foil or the support. It superimposes so that it may oppose, and is laminated | stacked on the said copper foil or the said support body by the method by cold rolling. The invention according to claim 8 is characterized in that, in the method for manufacturing a metal laminate for QFN according to claim 7, each joining surface is activated before the nickel foil is superimposed on the copper foil or the support. To do.
Furthermore, the invention of claim 9 is the method for producing a metal laminate for QFN according to claim 6 or 8, wherein the activation treatment is performed in an inert gas atmosphere of 10 to 1 × 10 ⁻³ Pa. Glow discharge is performed by applying an alternating current of 1 to 50 MHz to one electrode A which is grounded so that the joint surfaces face each other, and applying an alternating current of 1 to 50 MHz to the other electrode B which is insulated and supported. Sputter etching is performed so that the area of each of the bonding surfaces in contact with the electrode A exposed in the plasma generated by the discharge is 1/3 or less of the area of the electrode B.

  A tenth aspect of the present invention relates to a method of manufacturing a QFN that solves the above-described problems, and a step of forming a resist wiring pattern on a copper foil using the QFN metal laminate according to any one of the first to fourth aspects. Etching the copper foil and nickel layer, removing the resist to form a wiring, laminating an IC substrate on the surface of the copper foil remaining without etching, laminating the IC substrate and the IC substrate. It consists of the process of connecting with the copper foil which is not, and the process of removing a support body.

  Furthermore, the invention of claim 11 relating to a method of manufacturing a QFN having bumps includes a step of forming a resist wiring pattern on a copper foil using the metal laminate for QFN according to any one of claims 1 to 4, copper Etching the foil and nickel layer, removing the resist on the copper foil to form a wiring, laminating an IC substrate on the surface of the copper foil remaining without etching, laminating the IC substrate and the IC substrate Characterized in that it comprises a step of connecting to a copper foil not formed, a step of forming a resist wiring pattern on the support, a step of etching the support, and a step of forming a bump by removing the resist on the support. Is.

  In the metal laminate for QFN of the present invention, since the wiring forming material (copper foil) is previously laminated on the support before forming the wiring pattern by etching, the wiring forming material has strength, The thickness can be reduced to 100 μm, desirably 18 to 50 μm. Further, a step of laminating the support is not required after the wiring is formed by etching. Moreover, a support body can be used as a bump. The wiring forming material can also be used as wiring. According to the method for manufacturing a metal laminate for QFN of the present invention, since the metal laminate for QFN is laminated by cold rolling at a low pressure reduction rate, the mechanical properties of the material hardly change even after lamination. It is easy to design a metal laminated plate for use. In addition, since the copper foil and the support on which the nickel layer is formed, or the support on which the copper foil and the nickel layer are formed, the respective bonding surfaces are activated before being overlapped, the nickel layer and the support There is no such oxide at the bonding interface, and a stable resistance value of the wiring formed in the subsequent etching step can be obtained. Moreover, by performing the activation process of the joint surface by a sputter etching process, a good activation process can be performed by a high-speed process, and as a result, a laminated junction can be achieved at a low temperature.

  In addition, according to the QFN manufacturing method of the present invention, since the metal laminate for QFN composed of the three layers of the copper foil / nickel layer / support is used, the wiring forming material has strength and is thinner. A QFN with a small size and a high degree of integration can be obtained, and a step of laminating a support is not required, and the productivity is excellent.

In order to solve the above-mentioned problems, the present inventors have conducted a keen study, and as a result, the QFN metal laminated plate having the following configuration capable of reducing the thickness of the wiring forming material has been reduced in thickness, size, and height. It was found that it can cope with the integration.
That is, the QFN metal laminate of the present invention is composed of three layers of copper foil / nickel layer / support.
The nickel layer is provided on a copper foil or a support by a plating method or a lamination method. As a plating method, a known method can be applied, and for example, an electroplating method, an immersion plating method, a vacuum evaporation method, or the like is performed. As the nickel layer, nickel alone or a nickel alloy containing nickel as a main component can be used. As the nickel alloy containing nickel as a main component, a nickel-phosphorus alloy, a nickel-boron alloy, or the like can be applied. It is desirable that an alloy component such as phosphorus or boron is contained in the nickel alloy plating by 20% by mass or less. If it exceeds 20% by mass, the role as an etching stop layer becomes ineffective. As thickness of a nickel layer, 0.1-10 micrometers is desirable, More desirably, it is 0.5-2 micrometers. If the thickness is less than 0.1 μm, the nickel layer is not uniformly coated, which causes a problem in terms of the role as an etching stop layer. On the other hand, if it exceeds 10 μm, it is too thick and the effect as an etching layer is saturated, which is not economical.

On the other hand, as a method of laminating the nickel foil with the copper foil or the support, the nickel foil is laminated on the copper foil or the support by a known method such as a cold rolling method, a hot rolling method, a method of heat-treating after the cold rolling. To do. In particular, before laminating the surfaces of the nickel foil and the copper foil or support to be joined, activation treatment is performed to remove oxides on the joining surface, and then cold rolling at a low pressure rate is performed. Lamination is performed by an activated bonding method.
The case where nickel foil and copper foil are joined will be described below as the activation joining method.

The nickel foil and the copper foil are each subjected to an activation treatment on the surfaces to be joined before joining. In the activation treatment, the copper foil and the nickel foil loaded in the vacuum chamber are brought into contact with one electrode (electrode A) grounded to the ground, and the other electrode (electrode B) supported by insulation, An electrode exposed to plasma generated by glow discharge by applying an alternating current of 1 to 50 MHz in an extremely low pressure inert gas atmosphere of 10 to 1 × 10 ⁻³ Pa, preferably argon gas, Sputter etching is performed so that the area of each of the contacted copper foil and nickel foil is 1/3 or less of the area of the electrode B.

If the inert gas pressure is less than 1 × 10 ⁻³ Pa, stable glow discharge is difficult to perform and high-speed etching is difficult, and if it exceeds 10 Pa, the activation treatment efficiency decreases. If the alternating current applied is less than 1 MHz, it is difficult to maintain a stable glow discharge, and continuous etching is difficult, and if it exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. Moreover, in order to etch efficiently, it is necessary to make each area of the copper foil and nickel foil which contacted the electrode smaller than the area of the electrode B. By making it 1/3 or less, it becomes possible to etch with sufficient efficiency. The sputter etching of the body foil and the nickel foil becomes uniform.

  Thereafter, the activated copper foil and nickel foil are laminated and joined. Laminate bonding is achieved by cold-welding with a superposition pressure welding unit, with the activated surfaces of the copper foil and nickel foil facing each other and contacting each other. Lamination bonding at this time can be performed at a low temperature, and adverse effects such as a change in structure and formation of an alloy layer at the copper foil, nickel foil, and bonding portion can be reduced or eliminated. When T is the temperature (° C.) of the copper foil and nickel foil, a good pressure contact state is obtained at 0 ° C. <T ≦ 300 ° C. If the temperature is 0 ° C. or lower, a special cooling device is required, and if it exceeds 300 ° C., adverse effects such as a change in structure occur. The rolling rate R (%) is preferably 0.01% ≦ R ≦ 30%. If it is less than 0.01%, sufficient bonding strength cannot be obtained, and if it exceeds 30%, deformation becomes large, which is not preferable in terms of processing accuracy. More preferably, 0.1% ≦ R ≦ 3%.

  By laminating and bonding in this manner, a copper foil in which nickel foils having a required layer thickness are laminated can be formed. Further, if necessary, it can be cut into a predetermined size and manufactured. The copper foil laminated with the nickel foil thus manufactured may be subjected to heat treatment for removing or reducing the residual stress if necessary.

  In addition, a batch process can be used for lamination | stacking joining. That is, a plurality of nickel foils and copper foils cut into a predetermined size in a vacuum chamber are loaded and transported to an activation processing apparatus so that the surfaces to be processed in an appropriate position such as vertical or horizontal are opposed or juxtaposed. When the device that holds or holds the nickel foil and the copper foil also serves as a pressure welding device, press and hold the nickel foil and the nickel foil after the activation treatment. In the case where the apparatus for holding the copper foil does not serve as the pressure welding apparatus, it is achieved by carrying the pressure welding by conveying it to a pressure welding apparatus such as a press apparatus. The activation treatment is preferably performed between one electrode having a nickel foil and a copper foil insulated and supported and the other electrode grounded.

  As the nickel foil, not only a nickel foil but also an alloy foil containing nickel as a main component, such as a nickel-iron alloy foil, can be applied. As thickness of nickel foil, 5-20 micrometers is desirable. When the thickness of the nickel foil is less than 5 μm, pinholes are easily formed in the nickel foil, and the effect of the role as an etching stop layer is almost lost. On the contrary, if it exceeds 20 μm, it is too thick and the effect as an etching stop layer is saturated, which is not economical.

  As the copper foil, an electrolytic copper foil or a rolled copper foil can be applied. In addition to Cu, oxygen-free copper, tough pitch copper, phosphor bronze, brass, copper beryllium-based alloys (for example, alloys with 2% beryllium and the remainder being copper), copper silver-based copper, etc. Known alloys such as alloys (for example, alloys of 3 to 5% silver and the balance being copper) can be applied. As thickness of copper foil, 8-100 micrometers is desirable. More desirably, the thickness is 18 to 50 μm. If the thickness is less than 8 μm, a problem arises in terms of conductivity because it is thin. Conversely, if it exceeds 100 μm, it is too thick and uneconomic.

When the support is left as a bump after etching, the same material as the copper foil is applied. When the bumps are not left, the same material as that of the copper foil may be applied, and other metal materials such as aluminum, aluminum alloy, and nickel may be applied. As aluminum and aluminum alloys, aluminum alloys such as 1000 series, 3000 series, and 5000 series defined in JIS H4000 can be applied in addition to Al. When the support is not left as a bump and a copper foil is not used, the nickel layer as an etching stop layer may be omitted. That is, when the support is not dissolved in the copper foil etching solution and the copper foil is not dissolved in the support etching solution, the nickel layer as the etching stop layer may not be provided.
The thickness of the support is preferably 30 to 150 μm. More desirably, the thickness is 50 to 80 μm. If it is less than 30 μm, it does not have a function as a bump or a support, whereas if it exceeds 150 μm, it is too thick and uneconomical.

  Nickel-plated copper foil and support, copper foil and nickel-plated support, copper foil and support laminated with nickel foil, or lamination with copper foil and nickel foil laminated is a cold rolling method, It is performed by a hot rolling method or a thermal diffusion treatment after cold rolling. In particular, nickel-plated copper foil and support, copper foil and nickel-plated support, copper foil and support laminated with nickel foil, or each surface where the copper foil and nickel foil laminated support are joined, Prior to lamination, after activation treatment is performed to remove oxides and the like on the bonding surfaces, lamination is performed by an activated bonding method by cold rolling at a low pressure reduction rate. The activated joining method is performed under the above-described conditions. Hereinafter, an example joining method using a nickel-plated copper foil and a support will be described with reference to FIG.

  As shown in FIG. 3, in the vacuum chamber 52, the planned joining surface side of the support 20 installed on the rewind reel 62 is activated by the activation processing device 70. Similarly, the surface to be joined of the nickel-plated copper foil 24 installed on the rewind reel 64 is activated by the activation processing device 80.

The activation process is performed as follows. That is, the nickel-plated copper foil 24 and the support 20 loaded in the vacuum chamber 52 are brought into contact with one electrode A which is grounded to the ground, and the other electrode B which is connected to an AC power source and insulated and supported. In addition, a glow discharge is performed by applying an alternating current of 1 to 50 MHz in an extremely low pressure inert gas atmosphere of 10 to 1 × 10 ⁻³ Pa, preferably in an argon gas, and exposed to plasma generated by the glow discharge. Sputter etching is performed so that the area of each of the nickel-plated copper foil 24 in contact with the electrode A and the support 20 is 1/3 or less of the area of the electrode B. If the inert gas pressure is less than 1 × 10 ⁻³ Pa, stable glow discharge is difficult to perform and high-speed etching is difficult, and if it exceeds 10 Pa, the activation treatment efficiency decreases. If the alternating current applied is less than 1 MHz, it is difficult to maintain a stable glow discharge, and continuous etching is difficult, and if it exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. Moreover, in order to etch efficiently, it is necessary to make each area of the nickel-plated copper foil 24 and the support 20 in contact with the electrode A smaller than the area of the electrode B. It becomes possible to etch with efficiency. Therefore, although not shown, a shielding plate (mask) having an appropriate opening for adjusting the facing area between the electrodes A and B is provided between the electrodes A and B.

  Thereafter, the nickel-plated copper foil 24 and the support 20 subjected to the activation treatment are laminated and joined. Lamination bonding is achieved by performing cold pressure welding with the overlapping pressure welding unit 60 with the nickel-plated copper foil 24 and the support body 20 facing each other so that the surfaces subjected to activation treatment face each other. In this case, the lamination bonding can be performed at a low temperature, and adverse effects such as a change in structure and formation of an alloy layer in the nickel-plated copper foil 24, the support 20 and the bonding portion can be reduced or eliminated. When T is the temperature (° C.) of the nickel-plated copper foil 24 and the support 20, a good pressure contact state is obtained at 0 ° C. <T ≦ 300 ° C. If the temperature is 0 ° C. or lower, a special cooling device is required, and if it exceeds 300 ° C., adverse effects such as a change in structure occur. The rolling rate R (%) is preferably 0.01% ≦ R ≦ 30%. If it is less than 0.01%, sufficient bonding strength cannot be obtained, and if it exceeds 30%, deformation becomes large, which is not preferable in terms of processing accuracy. More preferably, 0.1% ≦ R ≦ 3%.

  By laminating and bonding in this manner, a nickel-plated copper foil 24 having a required layer thickness and the QFN metal laminate plate 22 of the support 20 can be formed and taken up by a take-up roll 66. Furthermore, if necessary, it cuts out to a predetermined | prescribed magnitude | size and can manufacture the metal laminated board 4 for QFN of the copper foil and support which were nickel-plated. The QFN metal laminate 22 thus manufactured may be subjected to heat treatment for removing or reducing the residual stress, if necessary.

  In addition, a batch process can be used for lamination | stacking joining. That is, a surface to be processed in an appropriate position such as vertical or horizontal by loading a plurality of nickel-plated copper foils 24 or supports 20 cut in advance into a vacuum chamber and transporting them to an activation processing apparatus. Are installed or gripped and fixed in an opposed or juxtaposed state, etc., and the activation process is performed. Further, when the apparatus holding the nickel-plated copper foil 24 and the support 20 also serves as a pressure welding apparatus, it is installed after the activation process. Alternatively, when a device that holds the nickel-plated copper foil or the support is also used as a pressure welding device while being held in pressure contact, it is achieved by carrying the pressure welding device to a pressure welding device such as a press device. The activation treatment is preferably performed between the nickel-plated copper foil 24 and the support 20 as one electrode A that is insulated and supported, and the other electrode B that is grounded.

  Next, a method for producing QFN from a QFN metal laminate 4 comprising three layers of a copper foil, a nickel layer, and a support will be described with reference to FIGS. The case where the nickel plating 2 is performed on the copper foil 1 as the nickel layer will be described. FIG. 1 is a diagram showing a terminal type QFN that is characterized in that the QFN can be made extremely thin, and there is no need to stack a support again in the QFN manufacturing process, and the process can be omitted. is there. In the rewiring type of FIG. 2, since the remaining copper foil can be used as an alternative to the connection in addition to the terminal type, the amount of expensive gold used for the connection (connection length) can be reduced. That is, the terminal position on the IC board side and the terminal position on the motherboard side can be set apart.

(Formation of resist wiring pattern)
After applying a resist on the surface of the copper foil 1 of the QFN metal laminate 4, exposure and development are performed to form a resist wiring pattern (resist wiring pattern forming step). About these series of methods, it can carry out based on a conventional method. Although not shown, the resist wiring pattern may be formed of two layers of a gold plating layer or a nickel plating layer (lower layer) / gold plating layer (upper layer). In the case of two-layer plating, the thickness of expensive gold can be reduced, which is economical. The metal plating for forming the wiring pattern is preferably performed by electroplating, electroless plating or vapor deposition in view of the accuracy of the wiring pattern.

Next, the copper foil 1 of the QFN metal laminate 4 is etched (copper foil etching step). The copper foil 1 can be etched using a commercially available alkaline copper etchant or the like. Since the nickel plating layer 2 functions as an etching stop layer, it remains without being etched. Next, the resist is removed to form a wiring (wiring forming process).
Subsequently, only the exposed nickel layer is etched by changing the etching solution (nickel layer etching step). Since the etching stop layer is nickel, a commercially available nickel removing solution (for example, N-950 manufactured by Meltex) can be used (see FIGS. 1B and 2B).

(Lamination and connection of IC substrates)
In the above process, the remaining copper foil is laminated with an IC substrate 7 on its surface via an adhesive (IC substrate laminating process). Next, the IC substrate 7 and the copper foil 1 in the periphery thereof are connected 6 (connection process). The adhesive needs to have insulating properties in addition to adhesiveness. As the adhesive, known ones can be applied and are not particularly limited. For example, epoxy resin, urea resin, melamine resin, phenol resin, olefin resin, isocyanate resin, vinyl acetate resin, acrylic resin, chloroprene rubber resin, nitrile resin, styrene-butadiene rubber Resins, cyanoacrylate resins, polyurethane resins or hot melt adhesives can be applied. Examples of hot melt adhesives include ethylene vinyl acetate copolymer resins, polyamides, polyesters, atactic polypropylene, and thermoplastic elastomers.

Further, the IC substrate 7 can be turned upside down instead of being connected, and the IC substrate can be bonded to the remaining copper foil 1 via the solder balls. In this case, it is not necessary to connect with an expensive gold wire.
After the connection, the IC substrate 7, the adhesive, the connection 6, and the wiring copper foil on the support 3 are filled with the organic resin 5 (see FIG. 1 (c) and FIG. 2 (c)). The organic resin 5 may be a known one and is not particularly limited, but is preferably similar to the adhesive component. For example, epoxy resin, urea resin, melamine resin, phenol resin, olefin resin, isocyanate resin, vinyl acetate resin, acrylic resin, chloroprene rubber resin, nitrile resin, styrene-butadiene rubber Resins, cyanoacrylate resins, polyurethane resins or hot melt adhesives can be applied. Examples of hot melt adhesives include ethylene vinyl acetate copolymer resins, polyamides, polyesters, atactic polypropylene, and thermoplastic elastomers.

(Support removal)
After filling the IC substrate 7, the adhesive, the connection 6 and the copper foil for wiring with the organic resin 5, the support 3 is removed (support removal process). The support 3 is completely or partially removed by etching. When all of the support 3 is removed, the support 3 is completely dissolved with an etching solution (see FIGS. 1D and 2D). Also, as shown in FIGS. 1 (e) and 2 (e), when a bump is formed by removing a part, the support 3 uses a copper foil, and after exposure to resist, the resist is applied to the surface of the copper foil. To form a resist pattern. About these series of methods, it can carry out based on a conventional method. Next, the support 3 of the QFN metal laminate is etched (support etching step). The copper foil can be etched using a commercially available alkaline copper etchant or the like. Next, the resist is removed to form bumps 8 (bump formation step).
As described above, not only QFN but also QFN having bumps 8 can be manufactured.

Example 1
(1) Material structure The metal laminated plate for QFN consists of a nickel-plated (thickness: 1 μm) copper foil (electrolytic copper foil, thickness: 18 μm) and a copper foil (electrolytic copper foil, thickness: 50 μm) as a support. The nickel plating layer and the copper foil having a thickness of 50 μm were opposed to each other so as to be laminated by an activation joining method.
(Activated bonding conditions)
Vacuum atmosphere: Argon gas atmosphere, 10 ⁻² Pa
Applied AC: 30 MHz
Rolling ratio: 0.5%
(2) Formation of resist wiring pattern After applying a resist on a copper foil having a thickness of 18 μm, exposure and development were performed to form a resist wiring pattern.
(3) Etching Selective etching of a 18 μm thick copper foil was performed using a commercially available alkaline copper etchant or the like.
(4) Resist removal The resist was removed to form wiring. Next, the exposed nickel plating layer (etching stop layer) was removed by etching using a commercially available nickel removing solution (N-950 manufactured by Meltex).

(5) Lamination of IC substrate An IC substrate was laminated on the remaining copper foil via an adhesive (epoxy adhesive, thickness: 12 μm). Next, the IC substrate and the remaining wiring copper foil in the periphery thereof were connected. Furthermore, the IC substrate, the copper foil for wiring, and the connection were filled with an organic resin (epoxy resin).
(6) Forming resist wiring pattern for bump formation A resist wiring pattern for bump formation is formed by applying a resist on a 30 μm thick copper foil (electrolytic copper foil) as a support, and then exposing and developing.
(7) Support Etching Selective copper etching is performed using a commercially available alkaline copper etchant or the like to form bumps.

Example 2
(1) Material structure The metal laminated plate for QFN consists of a nickel-plated (thickness: 1 μm) copper foil (electrolytic copper foil, thickness: 18 μm) and an aluminum foil as a support (alloy symbol 1100 of JIS H4000, thickness: 80 μm). And the nickel plating layer and the aluminum foil face each other so as to be in contact with each other and laminated by an activation joining method.
(Activated bonding conditions)
Vacuum atmosphere: Argon gas atmosphere, 1 × 10 ⁻¹ Pa
Applied AC: 10 MHz
Rolling ratio: 1.0%
(2) Formation of resist wiring pattern After applying a resist on a copper foil having a thickness of 18 μm, exposure and development were performed to form a resist wiring pattern.
(3) Etching Selective etching of a 18 μm thick copper foil was performed using a commercially available alkaline copper etchant or the like.
(4) Resist removal The resist was removed to form wiring. Next, the exposed nickel plating layer (etching stop layer) was removed by etching using a commercially available nickel removing solution (N-950 manufactured by Meltex).

(5) Lamination of IC substrate An IC substrate was laminated on the remaining copper foil via an adhesive (epoxy adhesive, thickness: 15 μm). Next, the IC substrate and the remaining wiring copper foil in the periphery thereof were connected. Furthermore, the IC substrate, the copper foil for wiring, and the connection were filled with an organic resin (epoxy resin).
(6) Removal of Support The aluminum foil having a thickness of 80 μm as a support was removed using a commercially available alkaline copper etching solution or the like.

  In the metal laminated plate for QFN of the present invention, since the wiring forming material is laminated on the support in advance before forming the wiring pattern by etching, the wiring forming material is strong and can be made extremely thin. is there. Further, a step of laminating the support is not required after the wiring is formed by etching. Moreover, a support body can be used as a bump. The wiring forming material can also be used as wiring. Since the QFN metal laminate of the present invention is laminated by cold rolling at a low pressure reduction rate, the mechanical properties of the material hardly change even after lamination, and the design of the QFN metal laminate is easy. . In addition, since the nickel layer surface of the copper foil and the support are subjected to an activation treatment before being overlapped, there is no such oxide at the bonding interface between the nickel layer and the support, and a subsequent etching step. There is an advantage that a wire having a stable resistance value can be obtained, and the utility value is high in the manufacture of QFN.

It is a figure which shows the process of the formation method of QFN of this invention, (a) is a side view of the metal laminated board for QFN of this invention, (b) is a side view after copper selective etching and nickel tank removal, (c) ) Is a side view after stacking, wiring, and embedding of an organic resin, and (d) to (e) are side views after removing all or part of the support. It is a figure which shows the other process of the formation method of QFN of this invention, (a) is a side view of the metal laminated board for QFN of this invention, (b) is a side view after copper selective etching and nickel tank removal, (C) is a side view after stacking, wiring, and embedding of an organic resin, and (d) to (e) are side views after removing all or part of the support. It is a schematic sectional drawing which shows one Embodiment of the apparatus used for the manufacturing method of the metal laminated board for QFN of this invention. It is a figure which shows the other process of the formation method of the conventional QFN, (a) is a side view of a lead frame, (b) is a side view after selective etching, (c) is a side view after lamination | stacking of a support body, (D) is a side view after lamination and connection of an IC substrate, and embedding of an organic resin, and (e) is a side view after the entire support is removed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Copper foil 2 Nickel layer 3 Support body 4 Metal laminated board for QFN 5 Organic resin 6 Wiring 7 IC board 8 Bump 9 Lead frame 10 Adhesive 20 Support body 22 Metal laminated board for QFN 24 Nickel-plated copper foil 50 QFN Metal laminated plate manufacturing apparatus 52 Vacuum tank 60 Rolling unit 62 Rewinding reel 64 Rewinding reel 66 Take-up roll 70 Activation processing device 72 Electrode roll 74 Electrode 80 Activation processing device 82 Electrode roll 84 Electrode A Electrode A B Electrode B

Claims (11)

  A metal laminate for QFN, comprising three layers of copper foil / nickel layer / support.   The metal laminate for QFN according to claim 1, wherein the nickel layer is made of a nickel plating layer or a nickel foil.   The metal substrate for QFN according to claim 1 or 2, wherein the support is made of copper foil.   The thickness of the said copper foil is 8-100 micrometers, The metal laminated plate for QFN of Claim 1 or 2 characterized by the above-mentioned.   A method for producing a metal laminate for QFN comprising three layers of copper foil / nickel layer / support, wherein a step of forming a nickel layer on either the bonding surface of the copper foil or the bonding surface of the support, The copper foil and the support on which the nickel layer is formed, or the support on which the copper foil and the nickel layer are formed are overlapped so that the nickel layer faces the support or the copper foil, and a method by cold rolling is used. A method for producing a metal laminate for QFN, comprising laminating the copper foil and the support.   6. The copper foil and the support on which the nickel layer is formed, or the support on which the copper foil and the nickel layer are formed is subjected to an activation treatment on each bonding surface before being overlaid. Of manufacturing a metal laminate for QFN.   The formation of the nickel layer on the copper foil or the support is performed by superimposing the nickel foil so as to face the copper foil or the support and laminating the copper foil or the support by a method of cold rolling. The manufacturing method of the metal laminated sheet for QFN of Claim 5 or 6.   The method for producing a metal laminate for QFN according to claim 7, wherein each joint surface is activated before the nickel foil is superimposed on the copper foil or the support. In the inert gas atmosphere of 10 to 1 × 10 ⁻³ Pa, the activation treatment is in contact with one of the grounded electrodes A so that the bonding surfaces face each other, and the other is insulated and supported The glow discharge is performed by applying an alternating current of 1 to 50 MHz to the electrode B of the electrode B, and the respective areas of the joint surface that are in contact with the electrode A exposed in the plasma generated by the glow discharge are the electrodes. The method for producing a metal laminate for QFN according to claim 6 or 8, wherein a sputter etching process is performed so that the area of B is 1/3 or less.   A process for forming a resist wiring pattern on a copper foil, a process for etching the copper foil and the nickel layer, and a wiring by removing the resist, using the metal laminate for QFN according to claim 1. A step of laminating an IC substrate on the surface of the copper foil that remains without being etched, a step of connecting the IC substrate and a copper foil on which the IC substrate is not laminated, and a step of removing the support. The manufacturing method of QFN.   A step of forming a resist wiring pattern on a copper foil, a step of etching a copper foil and a nickel layer, and a step of removing the resist on the copper foil using the QFN metal laminated plate according to claim 1. A step of forming a wiring, a step of laminating an IC substrate on the surface of the copper foil remaining without being etched, a step of connecting the IC substrate and a copper foil in which the IC substrate is not laminated, a resist wiring pattern on the support A method for producing QFN, comprising: a step of forming; a step of etching the support; and a step of removing a resist on the support to form a bump.

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