TW522497B - Method of forming bent wire - Google Patents

Method of forming bent wire Download PDF

Info

Publication number
TW522497B
TW522497B TW089126700A TW89126700A TW522497B TW 522497 B TW522497 B TW 522497B TW 089126700 A TW089126700 A TW 089126700A TW 89126700 A TW89126700 A TW 89126700A TW 522497 B TW522497 B TW 522497B
Authority
TW
Taiwan
Prior art keywords
lead
capillary
jig
clamp
pin
Prior art date
Application number
TW089126700A
Other languages
English (en)
Inventor
Hideaki Tamai
Yasuyuki Komachi
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Application granted granted Critical
Publication of TW522497B publication Critical patent/TW522497B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/742Apparatus for manufacturing bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49149Assembling terminal to base by metal fusion bonding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49151Assembling terminal to base by deforming or shaping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49174Assembling terminal to elongated conductor
    • Y10T29/49179Assembling terminal to elongated conductor by metal fusion bonding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49194Assembling elongated conductors, e.g., splicing, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Description

522497 A7 B7 五、發明說明(/) [技術領域] 本發明,係關於彎曲狀引線之形成方法。 [先前技術] 目前,作爲以引線結合裝置形成具有彎曲部之彎曲狀 引線之方法,有例如日本專利特表平1 1-514493號公報所 示者。該方法,係在插通於毛細管、從該毛細管下面延伸 .之引線前端形成球體,降下毛細管而將球結合於電極墊。 之後,移動毛細管使其軌跡成彎曲狀以形成彎曲狀引線之 形狀。其次,使毛細管上升至引線之切斷位置上方,以電 子火焰噴射器、刀等之機械方式切斷引線,而形成彎曲狀 引線。 [發明欲解決之課題] 引線結合裝置,係對插通於毛細管之引線施加反張力 ,以賦予引線一定之拉力。又,爲保持引線,在毛細管之 上方設有引線夾具。 上述現有技術,由於係在移動毛細管形成彎曲狀引線 之形狀後切斷引線,故有以下之問題。移動毛細管以形成 彎曲狀引線之形狀時,由於需要從毛細管伸出引線,因此 引線夾具係在打開狀態。是以,由於施加在引線之反張力 ,而使得切斷前之彎曲狀引線之形狀被向上拉而變形,無 法獲得安定之形狀。又,由於僅係沿所形成之彎曲狀引線 之形狀,來移動毛細管以形成彎曲狀引線之形狀,因此會 3 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------# (請先閱讀背面之注意事項寫本頁) 訂---------線»» 經濟部智慧財產局員工消費合作社印製 522497 A7 B7 五、發明說明(>〇 因引線之彈力使得彎曲狀引線之彎曲部及傾斜部之形狀變 形,由於此一理由,故亦無法獲得安定之形狀。 本發明之第1課題,在提供一種能不受施加在引線之 反張力的影響,獲得安定、高品質之形狀的彎曲狀引線之 形成方法。 本發明之第2課題,在提供一種能吸收引線所具有之 多餘的彈力而成爲一定量之彈力,獲得更安定、高品質之 形狀的彎曲狀引線之形成方法。 本發明之第3課題,在提供一種能任意設定結合於電 子回路元件等之球體上方之引線長度,又不會增加成本, 且銷狀引線之長度一定,安定之一定量長度的彎曲狀引線 之形成方法。 [用以解決課題之手段] 爲解決上述第1課題之本發明的第1方法,其特徵在 於:係以引線結合裝置形成銷狀引線,在該銷狀引線插通 於毛細管之狀態,以軌跡成彎曲狀之方式移動毛細管來形 成彎曲狀引線。 爲解決上述第1課題之本發明的第2方法,其特徵在 於:係以引線結合裝置形成銷狀引線,於該狀態下,將前 述銷狀引線插入毛細管,且從銷狀引線分離之引線亦在毛 細管內,以軌跡成彎曲狀之方式移動毛細管來形成彎曲狀 引線。 爲解決上述第1課題之本發明的第3方法,其特徵在 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------- (請先閱讀背面之事項寫本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 522497 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(>) 於:係以引線結合裝置形成銷狀引線,將該銷狀引線插入 空毛細管,以軌跡成彎曲狀之方式移動毛細管來形成彎曲 狀引線。 爲解決上述第1及第2課題之本發明的第4方法,其 特徵在於:於上述第1、第2或第3方法中,具有移動前 述毛細管以在前述銷狀引線形成彎痕來形成傾斜部後,略 微降下毛細管,以該毛細管壓下前述傾斜部之步驟。 爲解決上述第1及第3課題之本發明的第5方法,其 特徵在於:於上述第1、第2或第3方法中,前述銷狀引 線之形成,係在插通於毛細管之引線前端形成球體後,自 毛細管下端延伸出引線,藉引線結合裝置所設置之壓痕機 構在前述球體與前述毛細管間之引線部分形成傷痕,使用 前述毛細管將前述球體結合於電子回路元件等之電極墊, 接著使毛細管上升後,將引線向上方拉起以自前述傷痕部 分切斷引線而形成。 爲解決上述第1及第3課題之本發明的第6方法,其 特徵在於:於上述第1、第2或第3方法中,前述銷狀引 線之形成,係使用具有與毛細管一起上下移動之第1引線 夾具及不上下移動之第2引線夾具的引線結合裝置,通過 第2引線夾具及第丨引線夾具將引線插通於毛細管,在打 開前述第2引線夾具' 關閉第1引線夾具之狀態下,於毛 細管中所插通之引線前端形成球體後,打開第i引線夾具 ’藉施加在引線之反張力之作用將球體抵接於毛細管下端 ’接著降下毛細管及第1引線夾具,關閉第2引線夾具後 5 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 一 ~ ~ (請先閱讀背面之注意事項寫本頁) 寫太 ϋ n ϋ I— n I 」f · ϋ n ϋ ϋ n ϋ ϋ •線·»· 522497 A7 B7 五、發明說明(0) ’使毛細管及第1引線夾具上升,自毛細管4下端延伸出 引線,接著在關閉第1引線夾具、打開第2引線夾具的狀 態下,藉引線結合裝置所設之壓痕機構,在前述球與前述 毛細管間之引線部分形成傷痕,接著打開第1引線夾具, 降下毛細管及第1引線夾具,使用前述毛細管將前述球體 結合於電子回路元件等之電極墊,接著使毛細管及第1引 線夾具上升,於此上升途中關閉第1引線夾具,將引線向 上方拉起以自前述傷痕部分切斷引線而形成。 [圖式之簡單說明] 圖1,係顯示本發明之彎曲狀引線形成方法之一實施 形態之銷狀引線形成的步驟圖。 圖2 ’係圖1之後續步驟,顯示本發明之彎曲狀引線 形成之一實施形態的步驟圖。 圖3 ’係顯示本發明之彎曲狀引線形成方法之其他實 施形態的步驟圖。 圖4’係顯示銷狀引線形成之其他實施形態的步驟圖 (請先閱讀背面之注意事項寫本頁) 寫太 訂--- 線½ 經齊卽智慧財4¾員X-消費合阼 [符號說明] 1 引線 la 球體 lb 傷痕 lc 壓接球體 6 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 522497 A7 ___ B7 五、發明說明(七) 〆 2 第2引線夾具 3 第1引線夾具 4 毛細管 5 放電棒 6 刀具 7 電子回路元件 8 電極墊 10 銷狀引線 11 彎曲狀引線 12 第1彎曲部 13 第1傾斜部 15 第2彎曲部 16 第2傾斜部 (請先閱讀背面之注意事項本頁)
訂--- [發明之實施形態] .線 經濟部智慧財產局員工消費合作社印製 以下,根據圖1及圖2說明本發明之一實施形態。如 圖1(a)所示,引線1,通過第2引線夾具2及第1引線夾 具3插通於毛細管4,自毛細管4之下端伸出。此狀態, 係第2引線夾具2打開,第1引線夾具3關閉之狀態。此 處,第2引線夾具2不上下移動,而第1引線夾具3則與 毛細管4 一起上下移動。於此狀態下,如圖i(b)所示,在 引線1之前端以放電棒(electric flame off)5之放電作成球 體la。.之後,放電棒5向箭頭方向移動。 其次,如圖1(c)所示,打開第1引線夾具3。據此, 7 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 522497 A7 B7 五、發明說明(& ) 藉施加在引線1之反張力之作用將球體la抵接於毛細管4 下端。接著如圖1(d)所示,使毛細管4及第1引線夾具3 僅下降長度L1。其次,如圖1(e)所示,關閉第2引線夾具 2,毛細管4及第1引線夾具3上升至原位置,亦即僅上升 長度L1。藉此,引線1僅從毛細管4之下端延伸長度L1 〇 其次,如圖1(f)所示,在關閉第1引線夾具3後打開 第2引線夾具2,設於毛細管4下端長度爲L2下方之未圖 示的引線結合裝置所設置之刀具6即來回動作,在欲切斷 引線1之位置刻出一傷痕lb。此時,由於刀具6係面對引 線1抵接而咬入大致相等程度,因此係在對向之位置刻出 大致相同大小之傷痕lb。 刀具6退回後,如圖1(g)所示,第1引線夾具3打開 ,毛細管4及第1引線夾具3下降,將球體la壓接於ic 、LSI等之電子回路元件7之電極墊8。其次,對毛細管4 施加超音波振動,將球體la結合於電極墊8,球体la成 爲壓接球lc。 其次,如圖1(h)所示,使毛細管4及第1引線夾具3 一起上升,於此上升途中關閉第1引線夾具3。藉此,將 引線1從傷痕lb部分切斷,形成銷狀引線10。此時,第1 引線夾具3關閉之時序,係銷狀引線10在毛細管4內,上 升至以圖2所示步驟所形成之彎曲狀引線u(參照圖2(g)) 之形成步驟的開始位置時。由於前述傷痕lb部分係相等之 大小施加在引線1之對向位置,因此切斷面不會不平而呈 8 本紙巧度適用中國國家標準(CNS)A4規格(210 X 297公爱) -------------f (請先閱讀背面之注咅奉項寫本頁) 訂---------線 Η 經濟部智慧財產局員工消費合作社印製 522497 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(7) 相同之狀態,此外,銷狀引線10之長度安定,能獲得一定 量長度L4。 其次,根據圖2說明彎曲狀引線11之形成方法。又, 圖2(a)至⑴係省略第2引線夾具2之圖示。從圖1(h)之狀 態,如圖2(a)所示,毛細管4及第1引線夾具3水平移動 。藉此,抵接於毛細管4之下端之第1彎曲部12即形成一 彎痕,從壓接球lc至第1彎曲部12形成第1傾斜部13。 接著,如圖2(b)所示,毛細管4及第1引線夾具3下降約 100//m左右。藉此,第1傾斜部13被壓至毛細管4之下 面。其次,如圖2(c)所示,毛細管4及第1引線夾具3上 升。 此處,若不進行圖2(b)之步驟,而從圖2(a)之步驟直 接進行圖2(c)之步驟的話,由於第1傾斜部13之彈性,第 1傾斜部13之傾斜角度(形狀)會變化。如本實施形態般, 藉在圖2(a)之步驟與圖2(c)之步驟間進行圖2(b)之步驟, 來吸收第1傾斜部13之彈性變形量,因此如圖2(c)所示, 在毛細管4上升時第1傾斜部13之傾斜角度(形狀)即安定 〇 其次如圖2(d)所示,毛細管4及第1引線夾具3係朝 向與圖2(a)所示之移動方向相反的方向水平移動,其移動 量較壓接球體lc之中心線14上僅多出一點(約100//m左 右)。藉此,抵接於毛細管4之下端之第2彎曲部15上形 成彎痕,從第1彎曲部12至第2彎曲部15前形成與前述 第1傾斜部13相反方向之第2傾斜部16。接著,如圖 9 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ϋ - - 1 - n n ..... I — 一σ,_ I an n n (請先閱讀背面之注意事項寫本頁) 寫士
.線H 522497 A7 B7 五、發明說明(I) 2(e)所示,毛細管4及第1引線夾具3下降約1〇〇//m左右 。藉此,第2傾斜部16被毛細管4之下面壓下。其次,如 圖2(f)所示,在壓接球體lc之中心線14上斜向上升。藉 前述圖2(e)之步驟,與前述圖2(b)之步驟相同地,第2傾 斜部16之傾斜角度(形狀)即能安定。 其次,如圖2(g)所示,第2引線夾具2關閉、第1引 線夾具3打開,毛細管4及第1引線夾具3上升,引線1 從毛細管4之下端延伸出。接著,第2引線夾具2打開、 第1引線夾具3關閉,移動至下一個電極墊8之上方,成 爲圖1(a)之狀態。據此,形成彎曲狀引線Π。之後,進行 圖1(a)〜(h)、圖2(a)〜(g)之步驟,依序形成彎曲狀引線11 〇 以上述方式,本實施形態中,首先如圖1(h)所示,由 於形成從引線1形成切斷之銷狀引線10,於該銷狀引線10 上以圖2(a)至(g)所示之步驟來形成彎曲狀引線u,因此該 彎曲狀引線11形成時,預先施加在引線1之反張力完全不 會作用,形成之彎曲狀引線11不至產生變形。又,形成彎 曲狀引線11之第1傾斜部13及第2傾斜部16時,藉設置 如圖2(b)及(e)所示之略微下降毛細管4而壓下之步驟,即 能獲得更爲安定之彎曲狀引線11。 又,形成銷狀引線10時’如圖1(f)所示,以刀具6來 形成傷痕lb於引線1之步驟,係在爲了將球la結合於電 極墊8而降下毛細管4之前進行。因此,電極墊8與毛細 管4間有充分之間隔可設置刀具6,不會有任何妨礙。此 10 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項寫本頁) 訂---------線 Η 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 522497 A7 __________ B7 五、發明說明(1) 外,在已密集形成圖2(g)所示之彎曲狀引線11時,亦由於 刀具6係在離開彎曲狀引線11之上方動作,刀具亦不會接 觸彎曲狀引線11。由於此等原因,刻出傷痕lb於引線i 之部分沒有限制,故能任意設定銷狀引線10之長度L3。 又’由於使用了第2引線夾具2,而能如圖1(e)所示 使引線1自毛細管4下端僅延伸出一定量之長度L1,因此 如圖1(f)所示,能在預先決定之引線1之長度L3之位置形 成傷痕lb。藉此,球體la至傷痕lb之長度L3即成爲安 定之一定量。是以,形成爲如圖1(h)所示般之銷狀引線1〇 之長度一定,能獲與前述長度L3大致相等之一定量長度 L4 ° 圖3係顯示本發明之其他實施形態。本實施形態,係 以引線結合裝置之一連串的步驟來形成彎曲狀引線11。本 實施形態,係以引線結合裝置預先形成銷狀引線10,之後 ,於其他步驟中以引線結合裝置之空毛細管4(沒有插通引 線1之毛細管4)來形成彎曲狀引線u。 首先’說明圖3(a)所示之銷狀引線1〇之形成方法。該 銷狀引線1〇之形成,係以圖1(a)至(g)及圖3(a)之步驟形成 。亦即,僅將前述實施形態之圖1(h)的步驟變更爲圖3(a) 之步驟而已。是以,省略圖1(a)至(g)之步驟的說明,而從 圖1(g)之步驟結束之狀態開始說明。 如圖1(g)所示,將球體la結合於電極墊8,球體la 即成爲壓接球體lc。接著,使毛細管4與第1引線夾具3 一起上升至較圖1(g)所示之傷痕lb的上面,於此上升途中 11 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) · I-----I -------- (請先閱讀背面之注意事項jjlll寫本頁) 線 Η 522497 A7 B7 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明(/6) 關閉第1引線夾具3。藉此,如圖3(a)所示,引線1從傷 痕lb部分被切斷,形成銷狀引線10,且引線丨從毛細管4 下面延伸出。進行此圖1(a)至(g)及圖3(a)之步驟,依序形 成銷狀引線10。 其次’以圖3(b)至⑴說明彎曲狀引線n之形成方法。 本實施形態之圖3(d)至⑴,分別對應前述實施形態之圖 2(a)至(g)。亦即,圖2(a)至(g)中,引線丨之下方部係位於 毛細管4內,但圖3(d)至⑴中,引線1則不在毛細管4內 ,此點不相同。 首先,如圖3(b)所示,空毛細管4位於銷狀引線1〇之 上方,接著降下毛細管4,如圖3(c)所示將銷狀引線1〇插 通於毛細管4。 接著,如圖3(d)所示,毛細管4移向箭頭所示之水平 方向。藉此,抵接於毛細管4下端之第i彎曲部12即形成 彎痕,=壓接球體1c至第1彎曲部n前形成第i傾斜部 13。接著,如圖3⑷所示,使毛細管4下降約i〇〇#m左 右。藉此,第1傾斜部13被毛細管4下面壓下。接著,如 圖3(f)所示,毛細管4上升。 位一其次,如圖3(g)所示,毛細管4向與前述相反方向之 則頭所示之水平方向移動,其移動量驕壓接球體k之中心 線Η上僅多出一點(約lOO^m左右)。藉此,抵接於毛細 管4下端之第2彎曲部15即形成彎痕,在第丨彎曲部12 ^第2彎曲部15前形成與前述帛i傾斜部13相反方向之 第2傾斜部16。接著,如圖3(h)所示,使毛細管4下降約 (請先閱讀背面之注意事項寫本頁) I 寫士 ------^-------- .線·»· 12 522497 A7 B7 五 經濟部智慧財產局員工消費合作社印製 發明說明(//) 100/zm左右。藉此,第2傾斜部16被毛細管4下面壓下 。接著,如圖3(i)所示,朝壓接球體lc之中心線14上向 箭頭所示之斜方向上升。 接著,如圖3(j)所示,毛細管4上升而形成彎曲狀引 線11。之後,進行圖3(b)至⑴之步驟,於銷狀引線1〇上 依序形成彎曲狀引線11。 由於本實施形態亦與前述實施形態同樣地,首先如圖 3(a)所示,形成從引線1切斷之銷狀引線10,於該銷狀引 線10上以圖3(b)至(j)所示之步驟形成彎曲狀引線11,故 該彎曲狀引線11形成時,預先施加於引線1之反張力完全 不會作用,所形成之彎曲狀引線11不至變形。又,形成彎 曲狀引線11之第1傾斜部13及第2傾斜部16時,藉設置 如圖3(e)及(h)所示之使毛細管4略微下降而壓下之步驟, 即能獲得更爲安定之彎曲狀引線11。 又,圖1及圖2所示之實施形態,由於係以一連串之 步驟形成彎曲狀引線11,因此需如圖1(f)所示,預先在切 斷位置形成傷痕lb。然而,於圖3所示之實施形態中,由 於係先形成銷狀引線10,然後再以空毛細管4來形成彎曲 狀引線11,故銷狀引線1〇之形成方法,不限定於前述之 圖1(a)至(g)、圖3(a)之步驟。例如以圖4所示之方法來形 成銷狀引線10亦可。 如圖4所示,引線1,係通過第2引線夾具2及第! 引線夾具3而插通於毛細管4,從毛細管4下端延伸出。 該狀態’係第2引線夾具2打開,第丨引線夾具3關閉之 13 (請先閱讀背面之注意事項寫本頁) 丨夢 寫士 訂---- 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 χ 297公釐) 經濟部智慧財產局員工消費合作社印製 522497 A7 B7 五、發明說明(/2) 狀態、。於該狀態下,如圖4(b)所示,在引線1前端以放電 棒5之放電作出球體ia。之後,放電棒5向箭頭方向移動 〇 接著,如圖4(c)所示,第1引線夾具3打開。據此, 藉施加於引線1之反張力之作用,球體la抵接於毛細管4 下端。接著,如圖4(d)所示,毛細管4及第1引線夾具3 下降,將球體la壓接於1C ' LSI等之電子回路元件7之電 極墊8。其次,將超音波振動施加於毛細管4,將球體la 結合於電極墊8,球體la成爲壓接球體lc。 接著,如圖4(e)所示,毛細管4及第1引線夾具3, 僅上升銷狀引線10之長度及尾部長度之份量。接著,如圖 4⑴所示,第1引線夾具3關閉後,刀具6往復移動而切 斷引線1。刀具6退回後,如圖4(g)所示,毛細管4及第1 引線夾具3上升,形成銷狀引線10。以此方法來形成銷狀 引線10亦可。 [發明之效果] 本發明之第1手段,由於係以引線結合裝置形成銷狀 引線,在該引線中插通毛細管之狀態下,以軌跡成彎曲狀 之方式移動毛細管來形成彎曲狀引線,故不受施加於引線 之反張力之影響,能獲得安定之高品質之形狀。 本發明之第2及第3手段,由於係以引線結合裝置形 成銷狀引線,於該狀態下,在毛細管插通前述銷狀引線, 且從銷狀引線分離之引線亦在毛細管內,以軌跡成彎曲狀 14
紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 522497 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(/h) 之方式移動毛細管來形成彎曲狀引線,或以引線結合裝置 形成銷狀引線,在該銷狀引線上插通空毛細管,以軌跡成 彎曲狀之方式移動毛細管來形成彎曲狀引線,故能獲得與 前述第1手段相同之效果。 本發明之第4手段,由於係在上述第1、第2或第3 手段中,具有移動前述毛細管使銷狀引線彎曲而形成傾斜 部後,再稍微降下毛細管以該毛細管壓下前述傾斜部,因 此除前述效果外,亦能吸收所具有之多餘的彈力使之成爲 一定量之彈力,故能獲得更爲安定之高品質之形狀。 本發明之第5手段,由於在上述第1、第2或第3手 段中,前述銷狀引線之形成,係在插通於毛細管之引線前 端形成球體後,將引線從毛細管下端延伸出,藉引線結合 裝置所設之壓痕機構在前述球體與前述毛細管間之引線部 分形成傷痕’以前述毛細管將前述球體結合於電子回路元 件等之電極墊’接著,在上升毛細管後,將引線向上方拉 起從傷痕部分切斷引線而形成,因此除前述第1手段之效 果外,能任意設定結合於電子回路元件等之球體上方之引 線長度,此外,不至增加成本,且能使銷狀引線之長度一 定,成爲安定之一定量長度。 15 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 ) --------t--------- (請先閱讀背面之注意事項寫本頁)

Claims (1)

  1. 522497 韻 C8 D8 六、申請專利範圍 6 ·如申請專利範圍第1、2或3之彎曲狀引線的形成 方法,其中,前述銷狀引線之形成,係使用具有與毛細管 一起上下移動之第1引線夾具及不上下移動之第2引線夾 具的引線結合裝置’通過第2引線夾具及第1引線夾具將 引線插通於毛細管,在打開前述第2引線夾具、關閉第1 引線夾具之狀態下,於毛細管中所插通之引線前端形成球 體後’打開第1引線夾具,藉施加在引線之反張力之作用 將球體抵接於毛細管下端’接著降下毛細管及第1引線夾 具,關閉第2引線夾具後,使毛細管及第丨引線夾具上升 ,自毛細管4下端延伸出引線,接著在關閉第丨引線夾具 、打開第2引線夾具的狀態下,藉引線結合裝置所設之壓 痕機構’在前述球與前述毛細管間之引線部分形成傷痕, 接著打開第1引線夾具,降下毛細管及第丨引線夾具,使 用前述毛細管將前述球體結合於電子回路元件等之電極墊 ’接著使毛細管及第1引線夾具上升,於此上升途中關閉 第1引線夾具,將引線向上方拉起以自前述傷痕部分切斷 引線而形成。 (請先閲讀背面之注意事項再塡寫本頁) 、-σ 線 __2 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
TW089126700A 2000-03-24 2000-12-14 Method of forming bent wire TW522497B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000084863A JP4088015B2 (ja) 2000-03-24 2000-03-24 湾曲状ワイヤの形成方法

Publications (1)

Publication Number Publication Date
TW522497B true TW522497B (en) 2003-03-01

Family

ID=18601281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089126700A TW522497B (en) 2000-03-24 2000-12-14 Method of forming bent wire

Country Status (4)

Country Link
US (1) US6564453B2 (zh)
JP (1) JP4088015B2 (zh)
KR (1) KR100424166B1 (zh)
TW (1) TW522497B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI824354B (zh) * 2021-12-15 2023-12-01 日商新川股份有限公司 打線接合裝置、打線切斷方法以及程式
US12107067B2 (en) 2020-12-18 2024-10-01 Shinkawa Ltd. Wire bonding device, wire cutting method and non-transitory computer-readable recording medium recording program

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7229906B2 (en) * 2002-09-19 2007-06-12 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
JP4509043B2 (ja) * 2006-02-14 2010-07-21 株式会社新川 スタッドバンプの形成方法
CN101505905A (zh) * 2006-10-18 2009-08-12 库利克和索夫工业公司 改进的导电凸块、包括改进的导电凸块的线圈及形成方法
JP4467631B1 (ja) * 2009-01-07 2010-05-26 株式会社新川 ワイヤボンディング方法
US8177495B2 (en) * 2009-03-24 2012-05-15 General Electric Company Method and apparatus for turbine interstage seal ring
CN102437111B (zh) * 2011-12-01 2014-03-26 中南大学 利用线夹制造折点的快速引线成弧方法及装置
US9087815B2 (en) * 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) * 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
TWI543284B (zh) * 2014-02-10 2016-07-21 新川股份有限公司 半導體裝置的製造方法以及打線裝置
US20230282613A1 (en) * 2021-06-07 2023-09-07 Shinkawa Ltd. Manufacturing method of semiconductor device and wire bonding apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5813115A (en) * 1994-08-03 1998-09-29 Matsushita Electric Industrial Co., Ltd. Method of mounting a semiconductor chip on a wiring substrate
US5734546A (en) * 1994-09-21 1998-03-31 Rohm Co. Ltd. Capacitor element for solid electrolytic capacitor and process for making the same
KR20030096425A (ko) 1994-11-15 2003-12-31 폼팩터, 인크. 인터포저
JP3189115B2 (ja) * 1996-12-27 2001-07-16 株式会社新川 半導体装置及びワイヤボンディング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12107067B2 (en) 2020-12-18 2024-10-01 Shinkawa Ltd. Wire bonding device, wire cutting method and non-transitory computer-readable recording medium recording program
TWI824354B (zh) * 2021-12-15 2023-12-01 日商新川股份有限公司 打線接合裝置、打線切斷方法以及程式

Also Published As

Publication number Publication date
KR20010092682A (ko) 2001-10-26
KR100424166B1 (ko) 2004-03-24
JP4088015B2 (ja) 2008-05-21
US20010023534A1 (en) 2001-09-27
JP2001274186A (ja) 2001-10-05
US6564453B2 (en) 2003-05-20

Similar Documents

Publication Publication Date Title
TW522497B (en) Method of forming bent wire
TW484193B (en) Forming method of pin-shaped conducting wire and the like
TW469551B (en) Method for forming pin-like wires and the like
TWI358096B (zh)
JP4509043B2 (ja) スタッドバンプの形成方法
TWI541921B (zh) 打線裝置以及半導體裝置的製造方法
JP2007334040A (ja) 光ファイバ切断装置
TW510002B (en) Wire bonding method
CN1348569A (zh) 包括卡片排出装置的用于连接智能卡的紧凑型组件
CN106165077B (zh) 半导体装置的制造方法、半导体装置以及打线装置
JP4369401B2 (ja) ワイヤボンディング方法
JP3823726B2 (ja) 金型装置
TW384486B (en) Method for joining shielded wires (2)
TW562941B (en) Inspection jig for print circuit board
CN106233444B (zh) 半导体装置的制造方法以及打线装置
KR102411252B1 (ko) 와이어 본딩 장치
JPH0353606B2 (zh)
JP2537389B2 (ja) ワイヤボンディング方法及びその装置
JPS61150300A (ja) リ−ド折曲げ装置
TWM618360U (zh) 數位筆跡擦除裝置及具有該裝置的觸控筆
JP2003332180A (ja) 電子部品端子の折り曲げ方法
JPS59222891A (ja) 楽器用ハンマ−の加工法
TW388948B (en) Method of determining the tip angle of a probe card needle
JPS5973026U (ja) 押曲げ装置
JPH06181273A (ja) リード成形方法およびその成形装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees